KR100636076B1 - 반도체 제조 장비의 침식 방지 부품 및 그 제조방법 - Google Patents
반도체 제조 장비의 침식 방지 부품 및 그 제조방법 Download PDFInfo
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- KR100636076B1 KR100636076B1 KR1020017016764A KR20017016764A KR100636076B1 KR 100636076 B1 KR100636076 B1 KR 100636076B1 KR 1020017016764 A KR1020017016764 A KR 1020017016764A KR 20017016764 A KR20017016764 A KR 20017016764A KR 100636076 B1 KR100636076 B1 KR 100636076B1
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- ceramic coating
- coating film
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- phosphorus nickel
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000005260 corrosion Methods 0.000 title 1
- 230000007797 corrosion Effects 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 28
- 238000005524 ceramic coating Methods 0.000 claims abstract description 24
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims abstract description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000007747 plating Methods 0.000 claims abstract description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 8
- 239000011247 coating layer Substances 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000007772 electroless plating Methods 0.000 claims abstract description 4
- 238000007788 roughening Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 41
- 238000000576 coating method Methods 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 27
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 230000002265 prevention Effects 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 2
- XIKYYQJBTPYKSG-UHFFFAOYSA-N nickel Chemical compound [Ni].[Ni] XIKYYQJBTPYKSG-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 abstract description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 11
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 11
- 150000002739 metals Chemical class 0.000 abstract description 5
- 239000010935 stainless steel Substances 0.000 abstract description 5
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 5
- 238000007751 thermal spraying Methods 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052580 B4C Inorganic materials 0.000 abstract 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 230000003628 erosive effect Effects 0.000 description 15
- 239000000919 ceramic Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 229910003465 moissanite Inorganic materials 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910001586 aluminite Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Coating By Spraying Or Casting (AREA)
- Chemically Coating (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
Claims (20)
- (a) 반도체 제조 장비 부품의 금속 표면 상에 인 니켈 도금막을 증착하는 단계; 및(b) 상기 인 니켈 도금막 상에 최외각 표면을 이루는 세라믹 코팅막을 증착하는 단계를 포하하는 것을 특징으로 하는 반도체 제조 장비 부품의 금속 표면 코팅 방법.
- 제1항에 있어서, 상기 인 니켈 도금막은 무전해 도금법에 의해 증착되는 것을 특징으로 하는 반도체 제조 장비 부품의 금속 표면 코팅 방법.
- 제1항에 있어서, 상기 부품은 플라즈마 챔버 측벽을 포함하고, 상기 인 니켈 도금막은 상기 측벽의 노출된 내부 표면 상에 증착되는 것을 특징으로 하는 반도체 제조 장비 부품의 금속 표면 코팅 방법.
- 제1항에 있어서, 상기 세라믹 코팅막은 Al2O3, SiC, Si3N4, BC 또는 AlN을 포함하는 것을 특징으로 하는 반도체 제조 장비 부품의 금속 표면 코팅 방법.
- 제1항에 있어서, 상기 인 니켈 코팅막은 9 내지 12 중량 퍼센트의 인을 포함하는 것을 특징으로 하는 반도체 제조 장비 부품의 금속 표면 코팅 방법.
- 제1항에 있어서, 상기 인 니켈 도금막은 0.002 내지 0.004 인치 범위의 두께로 증착되는 것을 특징으로 하는 반도체 제조 장비 부품의 금속 표면 코팅 방법.
- 제1항에 있어서, 상기 세라믹 코팅막을 형성하기 전에 상기 인 니켈 도금막을 표면 거칠기 처리하고, 상기 세라믹 코팅막은 상기 인 니켈 도금막의 전부 또는 일부을 덮도록 상기 인 니켈 도금막 상으로 상기 세라믹 코팅막을 플라즈마 스프레이함으로써 상기 거칠게 된 인 니켈 도금막 상에 증착되는 것을 특징으로 하는 반도체 제조 장비 부품의 금속 표면 코팅 방법.
- 제1항에 있어서, 상기 세라믹 코팅막은 0.005 내지 0.040 인치 범위의 두께로 증착되는 것을 특징으로 하는 반도체 제조 장비 부품의 금속 표면 코팅 방법.
- 제1항에 있어서, 상기 금속 표면은 양극 산화처리되거나 또는 비양극 산화처리된 알루미늄 또는 알루미늄 합금이고, 상기 세라믹 코팅막은 Al2O3, SiC, Si3 N4, BC 또는 AlN인 것을 특징으로 하는 반도체 제조 장비 부품의 금속 표면 코팅 방법.
- (a) 금속 표면;(b) 상기 금속 표면 상의 인 니켈 도금막; 및(c) 상기 인 니켈 표면 상에 최외각 표면을 형성하는 세라막 코팅막을 포함 하는 것을 특징으로 하는 반도체 제조 장비의 부품.
- 제10항에 있어서, 상기 금속 표면은 양극 산화처리되거나 또는 비양극 산화처리된 알루미늄 또는 알루미늄 합금인 것을 특징으로 하는 반도체 제조 장비의 부품.
- 제10항에 있어서, 상기 세라믹 코팅막은 Al2O3, SiC, Si3N4, BC 또는 AlN인 것을 특징으로 하는 반도체 제조 장비의 부품.
- 제10항에 있어서, 상기 인 니켈 도금막은 9 내지 12 중량 퍼센트의 인을 포함하는 것을 특징으로 하는 반도체 제조 장비의 부품.
- 제10항에 있어서, 상기 인 니켈 도금막은 0.002 내지 0.004 인치 범위의 두께를 갖는 것을 특징으로 하는 반도체 제조 장비의 부품.
- 제10항에 있어서, 상기 세라믹 코팅막은 0.005 내지 0.030 인치 범위의 두께를 갖는 플라즈마 방사 알루미나 코팅막인 것을 특징으로 하는 반도체 제조 장비의 부품.
- 제10항에 있어서, 상기 부품은 플라즈마 챔버 벽인 것을 특징으로 하는 반도 체 제조 장비의 부품.
- 제10항에 있어서, 상기 세라믹 코팅막은 균열 방지막인 것을 특징으로 하는 반도체 제조 장비의 부품.
- 제10항에 있어서, 상기 인 니켈 도금막은 상기 세라믹 코팅막과 접촉하는 거친 표면을 포함하고, 상기 세라믹 코팅막은 열 스프레이 코팅막인 것을 특징으로 하는 반도체 제조 장비의 부품.
- 제10항에 있어서, 상기 세라믹 코팅막은 알루미나이고, 상기 금속 표면은 양극 산화처리되거나 또는 비양극 산화처리된 알루미늄 또는 알루미늄 합금인 것을 특징으로 하는 반도체 제조 장비의 부품.
- 제10항의 상기 부품을 포함하는 플라즈마 챔버내에서 반도체 기판을 처리하는 방법에 있어서,상기 방법은 상기 반도체 기판의 노출된 표면을 플라즈마로 첩촉시키는 것을 특징으로 하는 반도체 기판 처리 방법.
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US09/343,692 | 1999-06-30 | ||
US09/343,692 US6444083B1 (en) | 1999-06-30 | 1999-06-30 | Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof |
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US (1) | US6444083B1 (ko) |
JP (1) | JP4608159B2 (ko) |
KR (1) | KR100636076B1 (ko) |
CN (1) | CN100357493C (ko) |
AU (1) | AU6540700A (ko) |
TW (1) | TW524885B (ko) |
WO (1) | WO2001000901A1 (ko) |
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CN1358238A (zh) | 2002-07-10 |
JP4608159B2 (ja) | 2011-01-05 |
CN100357493C (zh) | 2007-12-26 |
AU6540700A (en) | 2001-01-31 |
US6444083B1 (en) | 2002-09-03 |
KR20020027373A (ko) | 2002-04-13 |
JP2003503597A (ja) | 2003-01-28 |
TW524885B (en) | 2003-03-21 |
WO2001000901A1 (en) | 2001-01-04 |
WO2001000901A9 (en) | 2002-12-27 |
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