JP2008251765A - プラズマエッチング装置 - Google Patents
プラズマエッチング装置 Download PDFInfo
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- JP2008251765A JP2008251765A JP2007090141A JP2007090141A JP2008251765A JP 2008251765 A JP2008251765 A JP 2008251765A JP 2007090141 A JP2007090141 A JP 2007090141A JP 2007090141 A JP2007090141 A JP 2007090141A JP 2008251765 A JP2008251765 A JP 2008251765A
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- plasma
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- plasma etching
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 59
- 239000004020 conductor Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 13
- 150000002367 halogens Chemical class 0.000 claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 229910000838 Al alloy Inorganic materials 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 10
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052776 Thorium Inorganic materials 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- 239000010941 cobalt Substances 0.000 claims description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052762 osmium Inorganic materials 0.000 claims description 9
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052703 rhodium Inorganic materials 0.000 claims description 9
- 239000010948 rhodium Substances 0.000 claims description 9
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 229910052720 vanadium Inorganic materials 0.000 claims description 9
- 229910052727 yttrium Inorganic materials 0.000 claims description 9
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 238000007750 plasma spraying Methods 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 6
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 4
- 230000002159 abnormal effect Effects 0.000 abstract description 14
- 238000002156 mixing Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 description 24
- 238000000576 coating method Methods 0.000 description 24
- 238000005530 etching Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000011109 contamination Methods 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- -1 BF 3 and NF 3 Chemical class 0.000 description 6
- 238000007751 thermal spraying Methods 0.000 description 6
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 238000007790 scraping Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000004693 Polybenzimidazole Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 150000002366 halogen compounds Chemical class 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920002480 polybenzimidazole Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Coating By Spraying Or Casting (AREA)
- Plasma Technology (AREA)
Abstract
処理中の異常放電の発生を抑制して試料の異物あるいは汚染を低減できるプラズマ処理装置を提供する。
【解決手段】
半導体デバイスの作成に、ハロゲン系のガスによるプラズマプロセスを用いたプラズマ処理装置において、処理室内の壁等のプラズマが接触する壁の表面に溶射膜を付け、この溶射膜の材料に導体を混入することにより、溶射膜を導体としたことを特徴とするプラズマエッチング装置。
【選択図】図1
Description
101 蓋部材
102 アンテナ
103 磁場発生部
105 電波源部
106 誘電体
107 石英プレート
108 シャワープレート
109 試料台
110 処理室
116 処理室壁部材
117,118 溶射膜
119 セラミックス焼結体
120 耐プラズマ性樹脂
121 内側チャンバ
131 排気バルブ
132 排気ポンプ
150 ウエハ
200 プラズマ
Claims (9)
- 半導体デバイスの作成に、ハロゲン系のガスによるプラズマプロセスを用いたプラズマ処理装置において、処理室内の壁等のプラズマが接触する壁の表面に溶射膜を付け、この溶射膜の材料に導体を混入することにより、溶射膜を導体としたことを特徴とするプラズマエッチング装置。
- 請求項1記載のプラズマエッチング装置において、プラズマ処理装置内の壁部材に溶射する材料を、Al2O3,YAG,Y2O3,Gd2O3,Yb2O3,YF3 のいずれか1種類もしくは2種類以上で構成され、この溶射材料内に導体を混入したことを特徴とする、プラズマエッチング装置。
- 請求項1または2記載のプラズマエッチング装置において、プラズマ処理装置の壁の表面を溶射する部材に混入する導体に炭素,コバルト,イリジウム,モリブデン,ニッケル,オスミウム,パラジウム,白金,ロジウム,ルテニウム,タンタル,トリウム,チタン,バナジウム,タングステン,イットリウム及びジルコニウムのいずれか1種類もしくは2種類以上で構成されることを特徴とするプラズマエッチング装置。
- 請求項1乃至3記載のいずれかのプラズマエッチング装置において、プラズマ処理装置の壁の表面を溶射する材料の体積抵抗率が100Ω・cm以下であることを特徴とするプラズマエッチング装置。
- 請求項1乃至4記載のいずれかのプラズマエッチング装置において、プラズマ処理装置の壁の表面を溶射する材料が、大気プラズマ溶射法もしくは減圧プラズマ溶射法によって被覆されていることを特徴とする、プラズマエッチング装置。
- 請求項1乃至プラズマエッチング装置において、前記処理室内の前記プラズマが接触する壁を被覆する溶射膜の基材に、ステンレス合金もしくはアルミ合金等の導体からなる材料を用いたことを特徴とするプラズマエッチング装置。
- 半導体デバイスの作成に、ハロゲン系のガスによるプラズマプロセスを用いたプラズマ処理装置において、処理室内の壁等のプラズマが接触する壁の表面に、炭素,コバルト,イリジウム,モリブデン,ニッケル,オスミウム,パラジウム,白金,ロジウム,ルテニウム,タンタル,トリウム,チタン,バナジウム,タングステン,イットリウム及びジルコニウムのいずれか1種類もしくは2種類以上の導体を混合したアルミナ等のセラミックス焼結体を用いたことを特徴とするプラズマエッチング装置。
- 半導体デバイスの作成に、ハロゲン系のガスによるプラズマプロセスを用いたプラズマ処理装置において、処理室内の壁等のプラズマが接触する壁の表面に、炭素,コバルト,イリジウム,モリブデン,ニッケル,オスミウム,パラジウム,白金,ロジウム,ルテニウム,タンタル,トリウム,チタン,バナジウム,タングステン,イットリウム及びジルコニウムのいずれか1種類もしくは2種類以上の導体を混合した石英を用いたことを特徴とするプラズマエッチング装置。
- 半導体デバイスの作成に、ハロゲン系のガスによるプラズマプロセスを用いたプラズマ処理装置において、処理室内の壁等のプラズマが接触する壁の表面に、炭素,コバルト,イリジウム,モリブデン,ニッケル,オスミウム,パラジウム,白金,ロジウム,ルテニウム,タンタル,トリウム,チタン,バナジウム,タングステン,イットリウム及びジルコニウムのいずれか1種類もしくは2種類以上の導体を混合した耐プラズマ性の樹脂を用いたことを特徴とするプラズマエッチング装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007090141A JP2008251765A (ja) | 2007-03-30 | 2007-03-30 | プラズマエッチング装置 |
US11/896,293 US20080236744A1 (en) | 2007-03-30 | 2007-08-30 | Plasma etching equipment |
KR1020070088600A KR100912479B1 (ko) | 2007-03-30 | 2007-08-31 | 플라즈마 에칭장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007090141A JP2008251765A (ja) | 2007-03-30 | 2007-03-30 | プラズマエッチング装置 |
Publications (1)
Publication Number | Publication Date |
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JP2008251765A true JP2008251765A (ja) | 2008-10-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007090141A Pending JP2008251765A (ja) | 2007-03-30 | 2007-03-30 | プラズマエッチング装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080236744A1 (ja) |
JP (1) | JP2008251765A (ja) |
KR (1) | KR100912479B1 (ja) |
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US20110136346A1 (en) * | 2009-12-04 | 2011-06-09 | Axcelis Technologies, Inc. | Substantially Non-Oxidizing Plasma Treatment Devices and Processes |
US20110207332A1 (en) * | 2010-02-25 | 2011-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin film coated process kits for semiconductor manufacturing tools |
US9129795B2 (en) * | 2011-04-11 | 2015-09-08 | Quadrant Epp Ag | Process for plasma treatment employing ceramic-filled polyamideimide composite parts |
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US20140315392A1 (en) * | 2013-04-22 | 2014-10-23 | Lam Research Corporation | Cold spray barrier coated component of a plasma processing chamber and method of manufacture thereof |
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US10443125B2 (en) | 2017-05-10 | 2019-10-15 | Applied Materials, Inc. | Flourination process to create sacrificial oxy-flouride layer |
JP2018206913A (ja) * | 2017-06-02 | 2018-12-27 | 東京エレクトロン株式会社 | 部材及びプラズマ処理装置 |
KR102395660B1 (ko) * | 2017-12-19 | 2022-05-10 | (주)코미코 | 용사 재료 및 그 용사 재료로 제조된 용사 피막 |
JP6801773B2 (ja) * | 2019-02-27 | 2020-12-16 | Toto株式会社 | 半導体製造装置用部材および半導体製造装置用部材を備えた半導体製造装置並びにディスプレイ製造装置 |
CN111627790B (zh) * | 2019-02-27 | 2024-05-03 | Toto株式会社 | 半导体制造装置构件、半导体制造装置、显示器制造装置 |
CN116635349A (zh) | 2021-01-26 | 2023-08-22 | 日本钇股份有限公司 | 烧结体 |
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JP2006196804A (ja) * | 2005-01-17 | 2006-07-27 | Hitachi High-Technologies Corp | プラズマ処理装置用部材及びプラズマ処理装置 |
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KR100436297B1 (ko) * | 2000-03-14 | 2004-06-18 | 주성엔지니어링(주) | 반도체 소자 제조용 플라즈마 스프레이 장치 및 이를이용한 반도체 소자 제조방법 |
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CN1249789C (zh) * | 2002-11-28 | 2006-04-05 | 东京毅力科创株式会社 | 等离子体处理容器内部件 |
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- 2007-03-30 JP JP2007090141A patent/JP2008251765A/ja active Pending
- 2007-08-30 US US11/896,293 patent/US20080236744A1/en not_active Abandoned
- 2007-08-31 KR KR1020070088600A patent/KR100912479B1/ko not_active IP Right Cessation
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JP2003243372A (ja) * | 2002-02-18 | 2003-08-29 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2006196804A (ja) * | 2005-01-17 | 2006-07-27 | Hitachi High-Technologies Corp | プラズマ処理装置用部材及びプラズマ処理装置 |
JP2006222240A (ja) * | 2005-02-10 | 2006-08-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2007308794A (ja) * | 2006-04-20 | 2007-11-29 | Shin Etsu Chem Co Ltd | 導電性耐プラズマ部材 |
JP2008174801A (ja) * | 2007-01-19 | 2008-07-31 | Covalent Materials Corp | プラズマプロセス装置用部材 |
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US20080236744A1 (en) | 2008-10-02 |
KR20080089130A (ko) | 2008-10-06 |
KR100912479B1 (ko) | 2009-08-17 |
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