TW524885B - Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof - Google Patents

Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof Download PDF

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Publication number
TW524885B
TW524885B TW089112733A TW89112733A TW524885B TW 524885 B TW524885 B TW 524885B TW 089112733 A TW089112733 A TW 089112733A TW 89112733 A TW89112733 A TW 89112733A TW 524885 B TW524885 B TW 524885B
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patent application
coating
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nickel plating
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TW089112733A
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Robert J Steger
Chris Chang
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Lam Res Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Coating By Spraying Or Casting (AREA)

Description

524885 、發明說明（1)
本發明係關於半導體加工設備以及增進此類元件之防蝕 特性之方法。 - feJO支術之說曰£ 在半導體加工之領域中，真空加工室通常係藉由供應一 3 =或鑛覆氣體至真空室，並且供應一RF場至‘體二將氣 ^ t，成一種電漿狀態，而在一基板上腐蝕材料以及將材 料化车蒸氣鑛覆（C V D)於基板上。就平行板之例子而言， $換結合電漿（TCPtm)，其亦稱之為感應結合電漿（Icp°)， =及電子迴旋加速共振反應器（ECR)及其元件係揭露在美 國專利第 4,3 40,46 2、4,948,458、5,200,232 及 5,8 20,723 破^ °由於在此類反應器中之電漿環境的腐蝕特性以及避 免微粒及/或重金屬污染的要求，因此在此類設備中之元 件最好係能夠具有防蝕特性。 在半導體基板之加工期間，該基板通常係藉由基板固定 器，諸如機械式夾體及靜電夾（ESC)，而固定在真空室 中。此類夾持系統及其元件之實例係揭露在美國專利第 5,262，029及5,838，529號中。加工氣體係能以不同之方式 供應至腔室中’諸如藉由氣體喷嘴、氣體環、氣體散佈板 等等。一種用於感應結合電漿反應器中之溫度加以控制之 氣體散佈板及其元件之實例，係揭露在美國專利第58 6 3 3 7 6號中。除了電聚反應設備以外，其他使用在半導體其 板加工之設備係包括運輸機構、氣體供應系統、運輸工&
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具、升降機構、負 等。此類設備之元 同的腐蝕狀況。再 需求’例如加工石夕 電材料，因此在此 防蝕特性。 載鎖具、門板機構 件係會受到與半導 者，由於對於加工 晶圓及用於平面顯 環境中係相當需要 、機器手臂、扣件等 體加工有關之各種不 半導體基板之高純度 示器之玻璃基板之介 這些元件具有增進之
W 鋁及鋁合金通常係用以做為電漿反應器之壁體、電極、 基板支撐件、扣件及其他之元件。為了防止此類金屬元件 之腐，，已有提出各種不同的技術，其係以各種不同之覆 件覆盍在該紹表面上。舉例來說，在美國專利第 5, 641，375號中係揭露鋁製腔室壁體，其係經過陽極電鍍 以降低電漿腐钱性及壁體的磨損性。該‘375號專利係^ 露出最後該陽極電鍍層係會被腐蝕掉，且因此該腔室係必 須加以更換。美國專利第5,8 9 5,586號係揭露一種技術， 其係用以在铭材料層上形成ΑΙΑ、A1C、TiC、A1N等防餘 薄膜’這些材料係揭露在日本先行公開專利第62 —丨〇33 79 號中。 在美國專利苐5，6 8 Ο，Ο 1 3號中揭露一種技術，其係在一 揭露於美國專利第4, 491，496號中之腐蝕室的金屬表面上 火焰喷灑Α1ζ〇3於其上。該‘013號專利係揭露了在鋁及諸 如氧化鋁之陶材覆蓋物之間的熱膨脹係數的差異，會由於 熱循環而導致破裂，且最後將使覆蓋物在腐蝕環境中失 效。為了保護腔室壁體，美國專利第5, 366, 58 5號； 5,798,016號及5 ,885,356號中提出一種内襯配置。舉例來
524885
〇 1 6號專利係揭露一種陶 說，該 鋁之石 且具有 避免鋁 直立之 由固態 層，其 噴灑或 揭露一 件來做 製襯裏
”，成之襯裏，其係具有易於機械dr ，化紹、SC2Q34Y2()3，且以Al2Q3來覆蓋|g較佳 叉到電漿之腐蝕。該‘58 5號專利係揭露一 陶製襯裏，其具有至少〇· 〇〇5英吋之厚度，且可r 鋁來加工製成。言亥‘585號專利亦有提到利用陶以 係以不浪費内層之鋁來加以鍍覆，且可以藉由火炎 電漿喷灑氧化鋁之方式來提供。該‘35 6號專利係〖 種礬土製成之陶製襯裏以及氮化鋁製成之陶製遮靜 為晶圓之基台。美國專利第5, 88 5, 3 56號係揭露^陶^ 材料，其係使用在CVD腔室中。 已有提出各種不同之覆蓋物來做為半導體加工設備之金 屬元件。舉例來說，在美國專利第5, 879, 523號中係揭露 一種加工室，其中一熱噴灑之Α 1 203覆蓋物或者具有可選擇 性之N i A lx結合覆蓋物的鋁係施加至諸如不銹鋼之金屬。 美國專利第5, 52 2, 9 3 2號及5, 891，53號係揭露一種铑覆蓋 物來做為基板電漿加工用之裝置之金屬元件，且具有一可 選擇性之鎳覆蓋物插置於其間。美國專利第5, 6 80, 0 1 3號 係揭露一種非結合性陶製保護件來使用在電漿加工室之金 屬表面上，該較佳的陶製材料係沉澱之A 1 N，次佳的材料 則包括氧化鋁、氟化鎂及氧化鎂。美國專利第5, 9 0 4, 7 78 號係揭露一種Si C CVD覆蓋件，其係位在自由直立之Si C 上’以做為一腔室壁體、腔室頂或者係包圍該晶圓之軸 環0
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j諸如喷氣頭氣體散布系統之電漿反應器元件而言，已 ^、、，對忒喷氣頭之材料而提出各種不同的方案。舉例來 二本案申巧人所擁有之美國專利第5，5 6 9，3 5 6號係揭露 ，在鋁衣電極上形成氧化鋁薄膜，以及在鋁膜上形成諸 σ氣化碎或氮切切化物覆蓋膜之技術。該‘ 7丨3號專 1係揭露了該矽化物覆蓋膜之厚度應為1 0微米或以下，最 1為5微米，因為該鋁覆蓋膜、礬土覆蓋膜及矽化 # 4盖膜係具有不同的線性膨脹係數，且當該矽化物覆蓋 膜,之厚度太厚時，係很容易產生破裂的情況。然而，小於 5,微米之厚度據稱係較不好，因為這對於鋁質基板之保護 並不足。、美國專利第4，5 3 4，5 1 6號係揭露一種不銹鋼、 ，〃銅等製成之上方噴氣頭電極。美國專利第4，6丨2，〇 7 7 :虎係揭:一種鎂製之噴氣頭電極。美國專利第5，8 8 8，g 〇 7 號係揭路一種無結晶碳、s i C或A丨。美國專利第5，〇 〇 6，2 2 〇 號及5, 0 22, 9 79號係揭露一種喷氣頭電極，其係整個由siC 所製成’或係藉由CVD而以SiC鍍覆在碳製基底上，以提供 高純度SiC之表面層。
有鑑於對於半導體加工設備之元件需要具有高純度及防 #特性’因此在此業界中便有需要針對這些元件之材料及 /或覆層來加以改良。再者，針對腔室材料，任何可以增 加電漿反應室之使用壽命並因此降低裝置之停工生產之時 間’运對於半導體晶圓之加工成本的降低係相當地有利。 發明摘要 依照本發明之第一特徵，其係提供一種在半導體加工設
第8頁 524885 五、發明說明（5) 備之元件覆蓋一金屬表面的方法。該方法包含··（ a )在半 . 導體加工設備之元件的金屬表面上鍍覆一磷鎳鍍層；以及 (b)在該磷鎳鍍層上鍍覆一陶材覆層，其中該陶材覆層係 · 構成一最外側表面。該金屬表面可以係經過陽極電鍍或未 經過陽極電鍍之鋁、不銹鋼、耐火金屬，諸如在電漿室中 所使用之鉬或其他金屬或合金。該陶材覆層可以係礬土、
SiC、AIN、Si3N4、BC或其他電漿相容性之陶材。 依照本發明之第二樣態，其係提供一種金屬元件。該元 件包括：（a) —金屬表面；（b) —位在該金屬表面上之鱗鎳$ 鍍層；以及（c) 一位在該磷鎳鍍層上之陶材覆層，其中該 陶材'覆層係構成最外層之防蝕表面。 圖式之簡單說明 本發明之目的及優點將可以由以下較佳實施例之詳細說 明並配合所附之圖式，而獲得更深入之瞭解，其中： 圖1係一電漿反應室之概要截面圖，其中該反應室係具 有依照本發明之覆蓋有防蝕覆層之元件。 圖2係圖1之細部結構A，其中詳細顯示防蝕覆層。 本發明較佳實施例之詳細說明 本發明係提供一種有效的方法來提供半導體加工設備之 元件之金屬表面的防蝕特性，諸如電漿加工反應室之零件¥ 的防蝕特性。此類元件係包括腔室壁體、基板支撐件、氣 體散佈系統，包括喷氣頭、隔板、環圈、喷嘴等等、扣 件、加熱元件、電漿篩板、襯裏、運輸模組元件，諸如自 動機器手臂、扣件、襯裏及外部腔室壁體等等。 “
524885
雖然本發明係可以應用至任何具有金屬表面之元件，然· 而為了方便說明，本發明將參考在美國專利第5, 82 0, 7 23 號中所揭露之裝置來加以說明，該專利之内容在在援引為 參考。 —
圖1係顯示一真空加工反應室1 〇，其係包括一基板固定 為70 ’其可在一基板上提供一靜電夾持力，並且當其以 氦氣回冷時，可提供一RF偏壓至基板。，聚集環圈72係將 電漿限制在基板上方之部位。一用以維持腔室中具有高密 度（例如，1 〇11 - 1 〇12個離子/立方公分）電漿之能量供應源係 配置在加工反應室1 0之頂部，諸如一由適當r F能源所致能 以提供高密度電漿之天線4〇。該腔室係包括適當的真空抽 取裝置’其係用以維持腔室内部3 〇具有適當的壓力值（例 如，在50毫托（mT〇rr)以下，通常係卜2〇毫托），其係藉由 在腔室底部大約定位在中央處之真空口 2〇來抽取該腔室内 部之空氣而達成。 均勻厚度之介電窗 並在加工反應室1 〇 在窗口正下方，其 由氣體供應源傳送 板延伸而出，且包 一大致平坦且具有 加工反應室1 〇之間， 一氣體散佈板5 2係位 開口，以將加工氣體 襯裏5 4係由氣體分佈 70 ° 口 5 0位在天線4 0與 頂部形成真空壁。 包括諸如循環孔之 至腔室1 0。一錐形 圍該基板固定器 在操作上，一諸 固定器70上，且其 一靜電夾體74加以 如矽晶圓6 〇之半導體 通常係當採甩氦氣來 固定在定位上。加工 基板係定位在基板 加以回冷時，藉由 氣體接著便藉由使
第10頁 524885 五、發明說明（8) 製側壁2 8上，包括以諸如無電性鍍覆或電鍍之方式、噴 濺、沉浸覆蓋或化學蒸氣鍍覆。無電性鍍覆係提供p_N丨覆 層之較佳方法’以使得腔室複雜之内部表面或諸如在氣體 供應元件中之氣體通道之其他腔室元件可加以鑛覆，而不 需要使用電流。在美國專利第4，6 3 6，2 5 5號中係揭露一種 P-N 1合金之無電式鍍覆方法，該專利之揭露内容在此援引 為參考。再者’習知無電式鑛覆方法係揭露在M e t a i s
Handbook 第五版，American Society For Metals ( 1 9 89 ) 一書中’其係由H· Boyer及T· Gal 1所編輯。 為了確保鍍覆材料具有良好的黏性，鋁製基板2 8之表面 最好係完全加以清潔，以將諸如氧化物或油脂之表面材料 在鍍覆之前先加以清除。一較佳之鎳合金鍍覆層係包括重 虿百分比為9至1 2之P，且最好係具有重量百分比為丨〇至i 2 之p 〇 該P-Ni覆層80係具有足夠之厚度以黏附至基板，並且使 其進一步在構成一陶層9 0之前先加以處理，其中該陶層係 諸如位在鎳表面上之礬土、SiC、Si3N4、BC、A1N等等:該 P-N 1覆層8 〇係可以具有任何適當的厚度，諸如至少大約為 〇· 0 02英忖之厚度，且最好係具有大約〇· 〇〇2英时至大約 〇· 010英吋之厚度，若為0· 0 0 2英吋至〇· 〇〇4英忖之間則更 佳。 、 #在P-Ni覆層8〇鍍覆在鋁製基板28上之後，該鍍覆便可以 藉由任何適當的技術來加以喷砂或粗糙化，且接著以一陶 層加以包覆。該陶層最好係熱喷灑在磷鎳層8 0上。如此粗
第12頁 524885
糙化之層體80係提供與熔化之陶製粒子的結合性。當陶製 覆層冷部枯，该覆層8 〇便可具有高結構壓縮強度，並且減 >、在復層9 0中產生裂缝。該陶層9 〇係可包含任何適當的陶 材或材料之組合，諸如A%、SiC、SiA、队、αιν、Τι〇2 —，陶材覆層亦可以藉由其他鍍覆技術來施加，諸如化學 洛乱鑛覆或RF喷遽。該較佳覆層方法係可經由熱喷灑來達 成，其中該陶粉末係會熔化且溶入於氣流中，而該氣流係 V向被喷灑覆蓋之元件。熱喷灑技術之一優點係在於該金 屬體係僅在面向熱喷灑鎗之表面上加以覆蓋，且可以使用 遮罩來保護其他的區域。習知熱喷灑技術，包括電漿喷灑 技術係揭露在pawl〇wski 所著之Science and Engineering of Thermal Spray Coating — 書中（John Wiley，1995)。 在較佳實施例中所述之陶層9 〇係藉由電漿喷灑緣土而鍍 覆在P-Ni覆層80上，且其厚度係在大約〇· 〇〇5至〇. 〇4〇英忖 的範圍中，且最好係〇· 010至0· 015英吋之間的厚度。該铭 層之厚度係可加以選擇，以配合在反應器中將遭遇之電漿 環境（例如，腐蝕、CVD等等）。該鋁層9 0係可覆蓋在反應 器腔室反上述元件之全部或一部分上。最好，其係可以配 置在暴露或未暴露於電漿ί哀境之部位上’諸如直接與電聚 接觸或者係位在腔室元件後面之零件，諸如襯裏，以防止 在反應室中加工之半導體基板產生鎳及/或鋁污染物。因 此’依照本發明之一優點，藉由抑制因腐蝕所產生之灰 塵，便可以降低在鍍覆薄膜中不當地產生針孔或者係不當
第13頁 524885
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O:\64\64863-910826.ptc 第15頁

Claims (1)

  1. 524885 案號 身聲-本年“ % 3〇
    1 WX4 六、申請專利範圍 1. 一種在半導體加工設備之元件覆蓋一金屬表面的方 法，該方法包含： (a) 在半導體加工設備之元件的金屬表面上鍍覆一磷 鎳鍍層； (b) 在該磷鎳鍍層上鍍覆一陶材覆層，其中該陶材覆 層係構成一最外側表面。 2. 根據申請專利範圍第1項之方法，其中該磷鎳鍍層係 藉由無電鍍覆方式來加以鍍覆。 3. 根據申請專利範圍第1項之方法，其中該元件係包含 一電漿室側壁，且該磷鎳鍍層係鍍覆在該側壁之曝露内表 面〇 4. 根據申請專利範圍第1項之方法，其中該陶材覆層係 包含Al2〇3、SiC、Si3N4、BC 或A1N。 5. 根據申請專利範圍第1項之方法，其中該磷鎳鍍層係 包括9至12重量百分比的構。 6. 根據申請專利範圍第1項之方法，其中該磷鎳鍍層所 鍍覆之厚度係為0 . 0 0 2英吋至0 . 0 0 4英吋。 7. 根據申請專利範圍第1項之方法，其進一步包含在鍍 覆陶材覆層之前，將該磷鎳鍍層加以表面粗糙化處理，該 陶材覆層係藉由電漿喷灑該陶材覆層至該磷鎳鍍層上以覆 蓋該磷鎳鍍層之全部或一部分，而鍍覆在該粗糙之磷鎳鍍 層上。 8. 根據申請專利範圍第1項之方法，其中該陶材覆層所 鍍覆之厚度係為0.005英吋至0.040英吋。
    O:\64\64863-910826.ptc 第16頁 524885 _案號89112733_年月曰 修正_ 六、申請專利範圍 9.根據申請專利範圍第1項之方法，其中該金屬表面係一 經過陽極電鍍或未經陽極電鍍之鋁或鋁合金，且該陶材覆 層係Al2〇3、SiC、Si3N4、BC 或A1N。 1 0. —種半導體加工設備之元件，其包含： (a) —金屬表面； (b) —位在該金屬表面上之磷鎳鍍層；以及 (c) 一位在該磷鎳鍍層上之陶材覆層，其中該陶材覆 層係構成最外層之表面。 1 1.根據申請專利範圍第1 0項之元件，其中該金屬表面 係一經過陽極電鍍或未經陽極電鍍之鋁或鋁合金。 1 2.根據申請專利範圍第1 0項之元件，其中該陶材係 Al2〇3、SiC、Si3N4、BC 或 A1N。 1 3.根據申請專利範圍第1 0項之元件，其中該磷鎳鍍層 係包括9至12重量百分比的磷。 1 4.根據申請專利範圍第1 0項之元件，其中該磷鎳鍍層 所鍍覆之厚度係為0.002英吋至0.004英吋。 1 5.根據申請專利範圍第1 0項之元件，其中該陶材覆層 係一種電漿喷灑之鋁覆層，其係具有0 . 0 0 5至0 . 0 3 0英吋之 厚度。 1 6.根據申請專利範圍第1 0項之元件，其中該元件係一 種電漿室壁體。 1 7.根據申請專利範圍第1 0項之元件，其中該陶材覆層 係具有龜裂抗性。 1 8.根據申請專利範圍第1 0項之元件，其中該磷鎳鍍層係
    O:\64\64863-910826.ptc 第17頁 524885 _案號89112733_年月日_ί±^_ 六、申請專利範圍 包括一粗糙表面，其係與磷鎳鍍層相接觸，且該陶材覆層 係一熱喷灑覆層。 1 9.根據申請專利範圍第1 8項之元件，其中該陶材覆層 係礬土，且該金屬表面係經過陽極電鍍或未經陽極電鍍之 鋁或鋁合金。 20. —種在包含有申請專利範圍第10項所述之元件之電 漿室中加工一半導體基板之方法，該方法係包含以電漿接 觸該半導體基板之一外露表面。
    O:\64\64863-910826.ptc 第18頁
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI489913B (zh) * 2007-11-29 2015-06-21 應用材料股份有限公司 沉積導電黏貼材料之設備與方法
TWI503883B (zh) * 2008-03-20 2015-10-11 Wonik Ips Co Ltd 真空處理裝置

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
TW503449B (en) * 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
JP4602532B2 (ja) 2000-11-10 2010-12-22 東京エレクトロン株式会社 プラズマ処理装置
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
JP2002359229A (ja) * 2001-06-01 2002-12-13 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置の製造装置
US7026009B2 (en) * 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US6798519B2 (en) 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7137353B2 (en) 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7204912B2 (en) 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US6837966B2 (en) 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7964085B1 (en) 2002-11-25 2011-06-21 Applied Materials, Inc. Electrochemical removal of tantalum-containing materials
US7780786B2 (en) 2002-11-28 2010-08-24 Tokyo Electron Limited Internal member of a plasma processing vessel
JP4597972B2 (ja) * 2003-03-31 2010-12-15 東京エレクトロン株式会社 処理部材上に隣接するコーティングを接合する方法。
WO2004095532A2 (en) 2003-03-31 2004-11-04 Tokyo Electron Limited A barrier layer for a processing element and a method of forming the same
US20060105182A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Erosion resistant textured chamber surface
JP2005064284A (ja) * 2003-08-14 2005-03-10 Asm Japan Kk 半導体基板保持装置
US7910218B2 (en) * 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7662435B2 (en) * 2003-11-12 2010-02-16 Intelligent Energy, Inc. Method for reducing coking in a hydrogen generation reactor chamber
ITVE20040038A1 (it) * 2004-10-21 2005-01-21 Domiziano Mostacci Apparecchiatura per la produzione endogena di radioisotopi, particolarmente per diagnostica tomografica ad emissioni di positroni.
US7579067B2 (en) * 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
KR100712125B1 (ko) * 2005-01-20 2007-04-27 삼성에스디아이 주식회사 유도결합형 플라즈마 처리장치
JP4475136B2 (ja) * 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US7612311B2 (en) * 2006-11-17 2009-11-03 Lam Research Corporation Methods and systems for controlling electric heaters
FR2909998B1 (fr) * 2006-12-18 2009-03-06 Snecma Propulsion Solide Sa Piece en materiau composite a matrice ceramique contenant du silicium, protegee contre la corrosion
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
CN101467501B (zh) * 2007-02-06 2011-07-20 揖斐电株式会社 印制电路板及该印制电路板的制造方法
JP2008251765A (ja) * 2007-03-30 2008-10-16 Hitachi High-Technologies Corp プラズマエッチング装置
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
KR100820744B1 (ko) 2007-09-05 2008-04-11 (주)제이스 금속 모재의 텅스텐 코팅방법
US8852685B2 (en) * 2010-04-23 2014-10-07 Lam Research Corporation Coating method for gas delivery system
JP5766495B2 (ja) * 2010-05-18 2015-08-19 株式会社日立ハイテクノロジーズ 熱処理装置
JP2011256946A (ja) * 2010-06-09 2011-12-22 Tohoku Univ 減圧処理装置
US20120052216A1 (en) * 2010-08-27 2012-03-01 Applied Materials, Inc. Gas distribution showerhead with high emissivity surface
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
KR101550439B1 (ko) 2014-10-17 2015-09-08 (주)씨엠코리아 반도체 웨이퍼용 세라믹히터 및 그 제조방법
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
US20160362782A1 (en) * 2015-06-15 2016-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10755900B2 (en) 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10297458B2 (en) * 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US20190323127A1 (en) * 2018-04-19 2019-10-24 Applied Materials, Inc. Texturing and plating nickel on aluminum process chamber components
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
KR102689689B1 (ko) * 2019-10-07 2024-07-30 가부시끼가이샤 레조낙 내식성 부재

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4361630A (en) * 1979-04-20 1982-11-30 The United States Of America As Represented By The Secretary Of The Commerce Ultra-black coating due to surface morphology
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
FR2538987A1 (fr) 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
US4673468A (en) 1985-05-09 1987-06-16 Burlington Industries, Inc. Commercial nickel phosphorus electroplating
JPS62170465A (ja) 1986-01-23 1987-07-27 Yoshikawa Kogyo Co Ltd 銅基合金母材への耐熱溶射皮膜形成方法
GB2212172B (en) 1987-11-17 1992-03-04 Baj Ltd Wear-resistant coated articles
US5262029A (en) 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
EP0441636B1 (en) * 1990-02-09 1994-06-22 Nihon Parkerizing Co., Ltd. Process for surface treating titanium-containing metallic material
JP2954716B2 (ja) 1990-03-08 1999-09-27 三菱アルミニウム株式会社 フッ化不働態膜を形成した工業材料およびその製造方法
JPH04161308A (ja) 1990-10-25 1992-06-04 Mitsubishi Electric Corp モールド用簡易金型およびその製造方法
US5294462A (en) * 1990-11-08 1994-03-15 Air Products And Chemicals, Inc. Electric arc spray coating with cored wire
US5200232A (en) 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
JPH0563063A (ja) * 1991-09-02 1993-03-12 Nikon Corp 静電チヤツク装置
JP3074873B2 (ja) * 1991-11-11 2000-08-07 株式会社神戸製鋼所 真空装置用表面被覆金属材
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5522932A (en) 1993-05-14 1996-06-04 Applied Materials, Inc. Corrosion-resistant apparatus
JPH07102387A (ja) * 1993-10-01 1995-04-18 Fuji Electric Co Ltd 機構部品およびその皮膜形成方法
US5798016A (en) 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
US5680013A (en) 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JPH07310163A (ja) * 1994-05-16 1995-11-28 Canon Inc セラミック溶射膜およびその形成方法
WO1995031822A1 (fr) 1994-05-17 1995-11-23 Hitachi, Ltd. Dispositif et procede de traitement au plasma
US5641375A (en) 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
JP3581900B2 (ja) * 1994-10-28 2004-10-27 三菱アルミニウム株式会社 フロロカーボン膜が形成された金属材料、その製造方法並びにその材料を用いた装置
JP2943634B2 (ja) * 1994-11-16 1999-08-30 株式会社神戸製鋼所 ＡｌまたはＡｌ合金製真空チャンバ部材の表面処理方法
CN1053020C (zh) * 1994-12-30 2000-05-31 邵天敏 一种铝及铝合金表面的涂层制备方法
JP2936129B2 (ja) 1995-04-12 1999-08-23 セイコー精機株式会社 防食構造
JP2913537B2 (ja) * 1995-04-12 1999-06-28 セイコー精機株式会社 防食構造
US5938845A (en) * 1995-10-20 1999-08-17 Aiwa Co., Ltd. Uniform heat distribution apparatus and method for electroless nickel plating in fabrication of thin film head gaps
JPH09167755A (ja) * 1995-12-15 1997-06-24 Nec Corp プラズマ酸化膜処理装置
US5838529A (en) 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US5723187A (en) * 1996-06-21 1998-03-03 Ford Global Technologies, Inc. Method of bonding thermally sprayed coating to non-roughened aluminum surfaces
JPH10121257A (ja) * 1996-08-22 1998-05-12 Kobe Steel Ltd 無電解めっき装置及び方法
US6120640A (en) * 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
JPH10226869A (ja) * 1997-02-17 1998-08-25 Mitsui Eng & Shipbuild Co Ltd プラズマ溶射法
US5879523A (en) 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI489913B (zh) * 2007-11-29 2015-06-21 應用材料股份有限公司 沉積導電黏貼材料之設備與方法
US9224582B2 (en) 2007-11-29 2015-12-29 Applied Materials, Inc. Apparatus and method for depositing electrically conductive pasting material
US9666416B2 (en) 2007-11-29 2017-05-30 Applied Materials, Inc. Apparatus and method for depositing electronically conductive pasting material
TWI503883B (zh) * 2008-03-20 2015-10-11 Wonik Ips Co Ltd 真空處理裝置

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US6444083B1 (en) 2002-09-03
CN1358238A (zh) 2002-07-10
JP2003503597A (ja) 2003-01-28
KR20020027373A (ko) 2002-04-13
CN100357493C (zh) 2007-12-26
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WO2001000901A1 (en) 2001-01-04
JP4608159B2 (ja) 2011-01-05

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