KR100616379B1 - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
- Publication number
- KR100616379B1 KR100616379B1 KR1020040066623A KR20040066623A KR100616379B1 KR 100616379 B1 KR100616379 B1 KR 100616379B1 KR 1020040066623 A KR1020040066623 A KR 1020040066623A KR 20040066623 A KR20040066623 A KR 20040066623A KR 100616379 B1 KR100616379 B1 KR 100616379B1
- Authority
- KR
- South Korea
- Prior art keywords
- light source
- wafer
- substrate
- semiconductor device
- manufacturing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000012535 impurity Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 50
- 239000013078 crystal Substances 0.000 claims abstract description 45
- 238000009826 distribution Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 56
- 238000010438 heat treatment Methods 0.000 claims description 44
- 238000009792 diffusion process Methods 0.000 claims description 34
- 230000008569 process Effects 0.000 claims description 28
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 abstract description 34
- 238000000137 annealing Methods 0.000 abstract description 15
- 230000006378 damage Effects 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 122
- 230000000052 comparative effect Effects 0.000 description 37
- 230000035882 stress Effects 0.000 description 31
- 230000003685 thermal hair damage Effects 0.000 description 12
- 230000008646 thermal stress Effects 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 230000004913 activation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 240000001973 Ficus microcarpa Species 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (19)
- 단결정 반도체 영역을 포함하는 기판과,상기 기판 상에 설치된 라인 패턴을 포함하는 패턴이며, 상기 라인 패턴의 길이 방향이 상기 단결정 반도체 영역의 결정 방위와 다른 패턴을 구비하여 이루어지는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 기판은 상기 단결정 반도체 영역의 표면에 설치된 깊이 20 ㎚ 이하의 불순물 확산 영역을 더 포함하는 것을 특징으로 하는 반도체 장치.
- 단결정 반도체 영역을 포함하는 기판의 상방에, 광원을 배치하는 공정과상기 광원으로부터 방사된 빛에 의해 상기 기판을 가열하는 공정이며, 상기 빛에 의해 상기 기판 상에 형성되는 광강도 분포가 상기 단결정 반도체 영역의 결정 방위와는 다른 방향에 있어서 강도가 최대치가 되는 분포가 형성되도록 상기 기판을 가열하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항에 있어서, 상기 광원은 복수의 램프를 포함하고, 또한 상기 복수 램프의 배열 방향이 상기 단결정 반도체 영역의 결정 방위와 다른 방향이 되도록 상기 광원을 상기 기판의 상방에 배치하는 것을 특징으로 하는 반도체 장치의 제조 방 법.
- 제4항에 있어서, 상기 광원은 복수의 램프를 포함하고, 또한 상기 복수 램프의 길이 방향이 상기 단결정 반도체 영역의 결정 방위와 다른 방향이 되도록 상기 광원을 상기 기판의 상방에 배치하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항 내지 제5항 중 어느 한 항에 있어서, 상기 광원은 플래시 램프 또는 할로겐 램프를 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항에 있어서, 상기 광원은 라인형의 빔을 출사하는 레이저를 포함하고, 상기 빔의 길이 방향이 상기 단결정 반도체 영역의 결정 방위와 다른 방향이 되도록 상기 광원을 상기 기판의 상방에 배치하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항 내지 제5항 중 어느 한 항에 있어서, 상기 광원으로부터 방사된 빛에 의해 상기 기판을 가열하는 공정을 복수회 행하고, 또한 이들 복수의 공정마다 상기 복수 램프의 배열 방향을 바꾸는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항 내지 제5항 중 어느 한 항에 있어서, 상기 기판과 상기 광원 사이의 거리를 23 ㎜ 이상 46 ㎜ 이하의 범위로 설정하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항 내지 제5항 중 어느 한 항에 있어서, 상기 기판을 예비 가열하는 공정을 더 포함하고, 또한 상기 기판이 예비 가열된 상태에서 상기 광원으로부터 방사된 빛에 의해 상기 기판을 가열하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항 내지 제5항 중 어느 한 항에 있어서, 상기 단결정 반도체 영역의 상기 결정 방위는 상기 반도체 영역의 벽개면의 면 방위인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항 내지 제5항 중 어느 한 항에 있어서, 상기 광원의 1/2 펄스 폭을 1 msec 이하로 설정하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 단결정 반도체 영역을 포함하는 기판의 상방에, 광원을 배치하는 공정과상기 광원으로부터 방사된 빛에 의해 상기 기판을 가열하는 공정을 포함하는 반도체 장치의 제조 방법이며,상기 광원의 1/2 펄스 폭을 1 msec 이하로 설정하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제13항에 있어서, 상기 광원은 플래시 램프 또는 레이저를 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제13항 또는 제14항에 있어서, 상기 광원의 1/2 펄스 폭을 0.5 msec 이하로 설정하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항 내지 제5항, 제13항 또는 제14항 중 어느 한 항에 있어서, 상기 기판은 상기 단결정 반도체 영역의 표면에 형성된 불순물 확산 영역을 더 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제16항에 있어서, 상기 불순물 확산 영역의 깊이는 20 ㎚ 이하인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항 내지 제5항, 제13항 또는 제14항 중 어느 한 항에 있어서, 상기 기판은 상기 단결정 반도체 영역 상에 형성된 패턴을 더 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 재18항에 있어서, 상기 패턴은 라인 패턴을 포함하고, 또한 상기 라인 패턴의 길이 방향은 상기 단결정 반도체 영역의 결정 방위와 다른 것을 특징으로 하는 반도체 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003208809A JP2005072045A (ja) | 2003-08-26 | 2003-08-26 | 半導体装置およびその製造方法 |
JPJP-P-2003-00208809 | 2003-08-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050022353A KR20050022353A (ko) | 2005-03-07 |
KR100616379B1 true KR100616379B1 (ko) | 2006-08-28 |
Family
ID=34263954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040066623A KR100616379B1 (ko) | 2003-08-26 | 2004-08-24 | 반도체 장치 및 그 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7045458B2 (ko) |
JP (1) | JP2005072045A (ko) |
KR (1) | KR100616379B1 (ko) |
CN (1) | CN100373533C (ko) |
DE (1) | DE102004041346B4 (ko) |
TW (1) | TWI251880B (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7255899B2 (en) * | 2001-11-12 | 2007-08-14 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and heat treatment method of substrate |
US20060258128A1 (en) * | 2005-03-09 | 2006-11-16 | Peter Nunan | Methods and apparatus for enabling multiple process steps on a single substrate |
JP2009188209A (ja) * | 2008-02-06 | 2009-08-20 | Panasonic Corp | 不純物活性化熱処理方法及び熱処理装置 |
JP2011040544A (ja) * | 2009-08-10 | 2011-02-24 | Toshiba Corp | 熱処理装置及び半導体装置の製造方法 |
CN102024681B (zh) * | 2009-09-11 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | 用于制造半导体器件的方法 |
JP2011187916A (ja) | 2010-02-12 | 2011-09-22 | Fuji Electric Co Ltd | 逆阻止型絶縁ゲートバイポーラトランジスタの製造方法 |
KR101829676B1 (ko) * | 2011-12-29 | 2018-02-20 | 삼성전자주식회사 | 웨이퍼 열 처리 방법 |
KR101809141B1 (ko) * | 2014-05-29 | 2018-01-19 | 에이피시스템 주식회사 | 히터 블록 및 기판 열처리 장치 |
JP6164672B1 (ja) * | 2016-07-19 | 2017-07-19 | 国立研究開発法人産業技術総合研究所 | 半導体装置およびその製造方法 |
JP6839939B2 (ja) * | 2016-07-26 | 2021-03-10 | 株式会社Screenホールディングス | 熱処理方法 |
JP6839940B2 (ja) * | 2016-07-26 | 2021-03-10 | 株式会社Screenホールディングス | 熱処理方法 |
JP6841666B2 (ja) * | 2017-01-13 | 2021-03-10 | 株式会社Screenホールディングス | 結晶構造制御方法および熱処理方法 |
JP6838992B2 (ja) * | 2017-02-21 | 2021-03-03 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP2020136307A (ja) * | 2019-02-13 | 2020-08-31 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4151008A (en) * | 1974-11-15 | 1979-04-24 | Spire Corporation | Method involving pulsed light processing of semiconductor devices |
JPS5750427A (en) * | 1980-09-12 | 1982-03-24 | Ushio Inc | Annealing device and annealing method |
JPH02205034A (ja) * | 1989-02-03 | 1990-08-14 | Hitachi Ltd | シリコン半導体素子およびその製造方法 |
JP3025408B2 (ja) * | 1994-06-20 | 2000-03-27 | シャープ株式会社 | 半導体素子の製造方法 |
JPH08288280A (ja) * | 1995-04-20 | 1996-11-01 | Mitsubishi Materials Corp | トランジスタ構造 |
JPH1187729A (ja) | 1997-09-12 | 1999-03-30 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
EP1049144A4 (en) * | 1997-12-17 | 2006-12-06 | Matsushita Electronics Corp | THIN SEMICONDUCTOR LAYER, METHOD AND DEVICE THEREOF, SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING SAME |
TWI313059B (ko) * | 2000-12-08 | 2009-08-01 | Sony Corporatio | |
JP2002198322A (ja) * | 2000-12-27 | 2002-07-12 | Ushio Inc | 熱処理方法及びその装置 |
JP2003197631A (ja) * | 2001-12-25 | 2003-07-11 | Seiko Epson Corp | 薄膜半導体装置及びその製造方法、電気光学装置、並びに電子機器 |
US20030124821A1 (en) * | 2001-12-28 | 2003-07-03 | Robertson Lance Stanford | Versatile system for forming shallow semiconductor device features |
US6987240B2 (en) * | 2002-04-18 | 2006-01-17 | Applied Materials, Inc. | Thermal flux processing by scanning |
-
2003
- 2003-08-26 JP JP2003208809A patent/JP2005072045A/ja active Pending
-
2004
- 2004-08-19 TW TW093125007A patent/TWI251880B/zh active
- 2004-08-24 CN CNB2004100569860A patent/CN100373533C/zh not_active Expired - Lifetime
- 2004-08-24 KR KR1020040066623A patent/KR100616379B1/ko active IP Right Grant
- 2004-08-25 US US10/924,909 patent/US7045458B2/en not_active Expired - Lifetime
- 2004-08-26 DE DE102004041346.0A patent/DE102004041346B4/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TWI251880B (en) | 2006-03-21 |
TW200518230A (en) | 2005-06-01 |
KR20050022353A (ko) | 2005-03-07 |
CN100373533C (zh) | 2008-03-05 |
DE102004041346A1 (de) | 2005-04-07 |
US7045458B2 (en) | 2006-05-16 |
DE102004041346B4 (de) | 2014-05-22 |
US20050062107A1 (en) | 2005-03-24 |
CN1591776A (zh) | 2005-03-09 |
JP2005072045A (ja) | 2005-03-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100616379B1 (ko) | 반도체 장치 및 그 제조 방법 | |
US7645665B2 (en) | Semiconductor device having shallow b-doped region and its manufacture | |
KR100535847B1 (ko) | 반도체 장치의 제조 방법 및 어닐링 장치 | |
US7157340B2 (en) | Method of fabrication of semiconductor device | |
JP4015068B2 (ja) | 半導体装置の製造方法 | |
US20030193066A1 (en) | Semiconductor device and method of manufacturing the same | |
US20080014763A1 (en) | Method of heating semiconductor wafer to improve wafer flatness | |
JP2005142344A (ja) | 半導体装置の製造方法および半導体製造装置 | |
US8283702B2 (en) | Process for manufacturing a large-scale integration MOS device and corresponding MOS device | |
JP2006278532A (ja) | 熱処理方法及び半導体装置の製造方法 | |
US6905983B2 (en) | Apparatus and method for manufacturing semiconductor devices, and semiconductor device | |
JP2006005373A (ja) | 半導体装置の製造方法 | |
US8860142B2 (en) | Method and apparatus to reduce thermal variations within an integrated circuit die using thermal proximity correction | |
JP2003059854A (ja) | 光加熱装置、光加熱方法及び半導体装置の製造方法 | |
US7569455B2 (en) | Manufacturing method of semiconductor device | |
JP4869130B2 (ja) | 半導体装置の製造方法 | |
JP5132695B2 (ja) | 半導体装置の製造方法 | |
JP2006261695A (ja) | 半導体装置の製造方法 | |
KR100699290B1 (ko) | 반도체 장치의 제조 방법 및 제조 장치 | |
JPH0766152A (ja) | 半導体装置の製造方法 | |
KR100976667B1 (ko) | 반도체 소자의 제조방법 | |
CN106653781A (zh) | 半导体器件的制造方法 | |
JP2008124211A (ja) | 半導体装置の製造方法 | |
KR100520216B1 (ko) | 반도체소자제조방법 | |
JP2004253446A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120802 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20130801 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140722 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20150716 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160719 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170719 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180718 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20190718 Year of fee payment: 14 |