KR100613536B1 - 자기저항 메모리 셀의 저항 차를 증가시키는 장치 및 방법 - Google Patents

자기저항 메모리 셀의 저항 차를 증가시키는 장치 및 방법 Download PDF

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Publication number
KR100613536B1
KR100613536B1 KR1020047008163A KR20047008163A KR100613536B1 KR 100613536 B1 KR100613536 B1 KR 100613536B1 KR 1020047008163 A KR1020047008163 A KR 1020047008163A KR 20047008163 A KR20047008163 A KR 20047008163A KR 100613536 B1 KR100613536 B1 KR 100613536B1
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South Korea
Prior art keywords
layer
magnetization
backup
memory cell
memory
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Expired - Fee Related
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KR1020047008163A
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English (en)
Korean (ko)
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KR20050044613A (ko
Inventor
반게르트요아힘
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인피네온 테크놀로지스 아게
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Publication of KR20050044613A publication Critical patent/KR20050044613A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Thin Magnetic Films (AREA)
KR1020047008163A 2001-11-30 2002-11-25 자기저항 메모리 셀의 저항 차를 증가시키는 장치 및 방법 Expired - Fee Related KR100613536B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10158795.3 2001-11-30
DE10158795A DE10158795B4 (de) 2001-11-30 2001-11-30 Magnetoresistive Speicherzelle mit dynamischer Referenzschicht

Publications (2)

Publication Number Publication Date
KR20050044613A KR20050044613A (ko) 2005-05-12
KR100613536B1 true KR100613536B1 (ko) 2006-08-16

Family

ID=7707532

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047008163A Expired - Fee Related KR100613536B1 (ko) 2001-11-30 2002-11-25 자기저항 메모리 셀의 저항 차를 증가시키는 장치 및 방법

Country Status (8)

Country Link
US (1) US7369426B2 (https=)
EP (1) EP1449220B1 (https=)
JP (1) JP4219814B2 (https=)
KR (1) KR100613536B1 (https=)
CN (1) CN1599937A (https=)
DE (2) DE10158795B4 (https=)
TW (1) TW588355B (https=)
WO (1) WO2003049120A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6667901B1 (en) * 2003-04-29 2003-12-23 Hewlett-Packard Development Company, L.P. Dual-junction magnetic memory device and read method
DE102004047411B3 (de) * 2004-09-28 2006-05-11 Funktionale Materialien Rostock E.V. Magnetisches Speicherschichtsystem
FR2914482B1 (fr) * 2007-03-29 2009-05-29 Commissariat Energie Atomique Memoire magnetique a jonction tunnel magnetique
JP2009146512A (ja) * 2007-12-14 2009-07-02 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド及び磁気記録装置
JP5103259B2 (ja) * 2008-04-22 2012-12-19 ルネサスエレクトロニクス株式会社 磁気記憶素子及び磁気記憶装置
EP2575135B1 (en) * 2011-09-28 2015-08-05 Crocus Technology S.A. Magnetic random access memory (MRAM) cell and method for reading the MRAM cell using a self-referenced read operation

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4243358A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung
JPH0945074A (ja) 1995-08-01 1997-02-14 Matsushita Electric Ind Co Ltd 磁気抵抗効果を利用したメモリー素子および増幅素子
EP0875901B1 (en) * 1997-04-28 2006-08-09 Canon Kabushiki Kaisha Magnetic thin-film memory element utilizing GMR effect, and magnetic thin-film memory
JP3891511B2 (ja) 1997-06-12 2007-03-14 キヤノン株式会社 磁性薄膜メモリ及びその記録再生方法
TW411471B (en) * 1997-09-17 2000-11-11 Siemens Ag Memory-cell device
JP2000090658A (ja) 1998-09-09 2000-03-31 Sanyo Electric Co Ltd 磁気メモリ素子
US6436526B1 (en) 1999-06-17 2002-08-20 Matsushita Electric Industrial Co., Ltd. Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell
US6233172B1 (en) 1999-12-17 2001-05-15 Motorola, Inc. Magnetic element with dual magnetic states and fabrication method thereof
US6404674B1 (en) * 2001-04-02 2002-06-11 Hewlett Packard Company Intellectual Property Administrator Cladded read-write conductor for a pinned-on-the-fly soft reference layer
US6576969B2 (en) * 2001-09-25 2003-06-10 Hewlett-Packard Development Company, L.P. Magneto-resistive device having soft reference layer
US6795281B2 (en) * 2001-09-25 2004-09-21 Hewlett-Packard Development Company, L.P. Magneto-resistive device including soft synthetic ferrimagnet reference layer
US6538917B1 (en) 2001-09-25 2003-03-25 Hewlett-Packard Development Company, L.P. Read methods for magneto-resistive device having soft reference layer
US7193889B2 (en) * 2004-02-11 2007-03-20 Hewlett-Packard Development Company, Lp. Switching of MRAM devices having soft magnetic reference layers

Also Published As

Publication number Publication date
EP1449220A2 (de) 2004-08-25
DE50202668D1 (de) 2005-05-04
DE10158795B4 (de) 2005-12-22
CN1599937A (zh) 2005-03-23
JP2005512316A (ja) 2005-04-28
JP4219814B2 (ja) 2009-02-04
EP1449220B1 (de) 2005-03-30
WO2003049120A2 (de) 2003-06-12
WO2003049120A3 (de) 2004-02-05
DE10158795A1 (de) 2003-06-18
US20050116308A1 (en) 2005-06-02
KR20050044613A (ko) 2005-05-12
US7369426B2 (en) 2008-05-06
TW588355B (en) 2004-05-21
TW200301481A (en) 2003-07-01

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