JP2005512316A5 - - Google Patents

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Publication number
JP2005512316A5
JP2005512316A5 JP2003550230A JP2003550230A JP2005512316A5 JP 2005512316 A5 JP2005512316 A5 JP 2005512316A5 JP 2003550230 A JP2003550230 A JP 2003550230A JP 2003550230 A JP2003550230 A JP 2003550230A JP 2005512316 A5 JP2005512316 A5 JP 2005512316A5
Authority
JP
Japan
Prior art keywords
layer
magnetization
memory cell
support
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003550230A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005512316A (ja
JP4219814B2 (ja
Filing date
Publication date
Priority claimed from DE10158795A external-priority patent/DE10158795B4/de
Application filed filed Critical
Publication of JP2005512316A publication Critical patent/JP2005512316A/ja
Publication of JP2005512316A5 publication Critical patent/JP2005512316A5/ja
Application granted granted Critical
Publication of JP4219814B2 publication Critical patent/JP4219814B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003550230A 2001-11-30 2002-11-25 動的な基準層を有する磁気抵抗メモリーセル Expired - Fee Related JP4219814B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10158795A DE10158795B4 (de) 2001-11-30 2001-11-30 Magnetoresistive Speicherzelle mit dynamischer Referenzschicht
PCT/DE2002/004323 WO2003049120A2 (de) 2001-11-30 2002-11-25 Magnetoresistive speicherzelle mit dynamischer referenzschicht

Publications (3)

Publication Number Publication Date
JP2005512316A JP2005512316A (ja) 2005-04-28
JP2005512316A5 true JP2005512316A5 (https=) 2007-04-12
JP4219814B2 JP4219814B2 (ja) 2009-02-04

Family

ID=7707532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003550230A Expired - Fee Related JP4219814B2 (ja) 2001-11-30 2002-11-25 動的な基準層を有する磁気抵抗メモリーセル

Country Status (8)

Country Link
US (1) US7369426B2 (https=)
EP (1) EP1449220B1 (https=)
JP (1) JP4219814B2 (https=)
KR (1) KR100613536B1 (https=)
CN (1) CN1599937A (https=)
DE (2) DE10158795B4 (https=)
TW (1) TW588355B (https=)
WO (1) WO2003049120A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6667901B1 (en) * 2003-04-29 2003-12-23 Hewlett-Packard Development Company, L.P. Dual-junction magnetic memory device and read method
DE102004047411B3 (de) * 2004-09-28 2006-05-11 Funktionale Materialien Rostock E.V. Magnetisches Speicherschichtsystem
FR2914482B1 (fr) * 2007-03-29 2009-05-29 Commissariat Energie Atomique Memoire magnetique a jonction tunnel magnetique
JP2009146512A (ja) * 2007-12-14 2009-07-02 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド及び磁気記録装置
JP5103259B2 (ja) * 2008-04-22 2012-12-19 ルネサスエレクトロニクス株式会社 磁気記憶素子及び磁気記憶装置
EP2575135B1 (en) * 2011-09-28 2015-08-05 Crocus Technology S.A. Magnetic random access memory (MRAM) cell and method for reading the MRAM cell using a self-referenced read operation

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4243358A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung
JPH0945074A (ja) 1995-08-01 1997-02-14 Matsushita Electric Ind Co Ltd 磁気抵抗効果を利用したメモリー素子および増幅素子
EP0875901B1 (en) * 1997-04-28 2006-08-09 Canon Kabushiki Kaisha Magnetic thin-film memory element utilizing GMR effect, and magnetic thin-film memory
JP3891511B2 (ja) 1997-06-12 2007-03-14 キヤノン株式会社 磁性薄膜メモリ及びその記録再生方法
TW411471B (en) * 1997-09-17 2000-11-11 Siemens Ag Memory-cell device
JP2000090658A (ja) 1998-09-09 2000-03-31 Sanyo Electric Co Ltd 磁気メモリ素子
US6436526B1 (en) 1999-06-17 2002-08-20 Matsushita Electric Industrial Co., Ltd. Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell
US6233172B1 (en) 1999-12-17 2001-05-15 Motorola, Inc. Magnetic element with dual magnetic states and fabrication method thereof
US6404674B1 (en) * 2001-04-02 2002-06-11 Hewlett Packard Company Intellectual Property Administrator Cladded read-write conductor for a pinned-on-the-fly soft reference layer
US6576969B2 (en) * 2001-09-25 2003-06-10 Hewlett-Packard Development Company, L.P. Magneto-resistive device having soft reference layer
US6795281B2 (en) * 2001-09-25 2004-09-21 Hewlett-Packard Development Company, L.P. Magneto-resistive device including soft synthetic ferrimagnet reference layer
US6538917B1 (en) 2001-09-25 2003-03-25 Hewlett-Packard Development Company, L.P. Read methods for magneto-resistive device having soft reference layer
US7193889B2 (en) * 2004-02-11 2007-03-20 Hewlett-Packard Development Company, Lp. Switching of MRAM devices having soft magnetic reference layers

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