DE10158795B4 - Magnetoresistive Speicherzelle mit dynamischer Referenzschicht - Google Patents

Magnetoresistive Speicherzelle mit dynamischer Referenzschicht Download PDF

Info

Publication number
DE10158795B4
DE10158795B4 DE10158795A DE10158795A DE10158795B4 DE 10158795 B4 DE10158795 B4 DE 10158795B4 DE 10158795 A DE10158795 A DE 10158795A DE 10158795 A DE10158795 A DE 10158795A DE 10158795 B4 DE10158795 B4 DE 10158795B4
Authority
DE
Germany
Prior art keywords
layer
magnetization
memory cell
support
magnetoresistive memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10158795A
Other languages
German (de)
English (en)
Other versions
DE10158795A1 (de
Inventor
Joachim Bangert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE10158795A priority Critical patent/DE10158795B4/de
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE50202668T priority patent/DE50202668D1/de
Priority to JP2003550230A priority patent/JP4219814B2/ja
Priority to EP02787395A priority patent/EP1449220B1/de
Priority to PCT/DE2002/004323 priority patent/WO2003049120A2/de
Priority to KR1020047008163A priority patent/KR100613536B1/ko
Priority to CNA028239296A priority patent/CN1599937A/zh
Priority to US10/497,007 priority patent/US7369426B2/en
Priority to TW091134489A priority patent/TW588355B/zh
Publication of DE10158795A1 publication Critical patent/DE10158795A1/de
Application granted granted Critical
Publication of DE10158795B4 publication Critical patent/DE10158795B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Thin Magnetic Films (AREA)
DE10158795A 2001-11-30 2001-11-30 Magnetoresistive Speicherzelle mit dynamischer Referenzschicht Expired - Fee Related DE10158795B4 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE10158795A DE10158795B4 (de) 2001-11-30 2001-11-30 Magnetoresistive Speicherzelle mit dynamischer Referenzschicht
JP2003550230A JP4219814B2 (ja) 2001-11-30 2002-11-25 動的な基準層を有する磁気抵抗メモリーセル
EP02787395A EP1449220B1 (de) 2001-11-30 2002-11-25 Magnetoresistive speicherzelle mit dynamischer referenzschicht
PCT/DE2002/004323 WO2003049120A2 (de) 2001-11-30 2002-11-25 Magnetoresistive speicherzelle mit dynamischer referenzschicht
DE50202668T DE50202668D1 (de) 2001-11-30 2002-11-25 Magnetoresistive speicherzelle mit dynamischer referenzschicht
KR1020047008163A KR100613536B1 (ko) 2001-11-30 2002-11-25 자기저항 메모리 셀의 저항 차를 증가시키는 장치 및 방법
CNA028239296A CN1599937A (zh) 2001-11-30 2002-11-25 包括动态参考层之磁阻记忆胞元
US10/497,007 US7369426B2 (en) 2001-11-30 2002-11-25 Magnetoresistive memory cell with dynamic reference layer
TW091134489A TW588355B (en) 2001-11-30 2002-11-27 Magnetoresistive memory cell with dynamic reference layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10158795A DE10158795B4 (de) 2001-11-30 2001-11-30 Magnetoresistive Speicherzelle mit dynamischer Referenzschicht

Publications (2)

Publication Number Publication Date
DE10158795A1 DE10158795A1 (de) 2003-06-18
DE10158795B4 true DE10158795B4 (de) 2005-12-22

Family

ID=7707532

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10158795A Expired - Fee Related DE10158795B4 (de) 2001-11-30 2001-11-30 Magnetoresistive Speicherzelle mit dynamischer Referenzschicht
DE50202668T Expired - Fee Related DE50202668D1 (de) 2001-11-30 2002-11-25 Magnetoresistive speicherzelle mit dynamischer referenzschicht

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE50202668T Expired - Fee Related DE50202668D1 (de) 2001-11-30 2002-11-25 Magnetoresistive speicherzelle mit dynamischer referenzschicht

Country Status (8)

Country Link
US (1) US7369426B2 (https=)
EP (1) EP1449220B1 (https=)
JP (1) JP4219814B2 (https=)
KR (1) KR100613536B1 (https=)
CN (1) CN1599937A (https=)
DE (2) DE10158795B4 (https=)
TW (1) TW588355B (https=)
WO (1) WO2003049120A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6667901B1 (en) * 2003-04-29 2003-12-23 Hewlett-Packard Development Company, L.P. Dual-junction magnetic memory device and read method
DE102004047411B3 (de) * 2004-09-28 2006-05-11 Funktionale Materialien Rostock E.V. Magnetisches Speicherschichtsystem
FR2914482B1 (fr) * 2007-03-29 2009-05-29 Commissariat Energie Atomique Memoire magnetique a jonction tunnel magnetique
JP2009146512A (ja) * 2007-12-14 2009-07-02 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド及び磁気記録装置
JP5103259B2 (ja) * 2008-04-22 2012-12-19 ルネサスエレクトロニクス株式会社 磁気記憶素子及び磁気記憶装置
EP2575135B1 (en) * 2011-09-28 2015-08-05 Crocus Technology S.A. Magnetic random access memory (MRAM) cell and method for reading the MRAM cell using a self-referenced read operation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999014760A1 (de) * 1997-09-17 1999-03-25 Infineon Technologies Ag Speicherzellenanordnung und deren verwendung als magnetisches ram und als assoziativer speicher

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4243358A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung
JPH0945074A (ja) 1995-08-01 1997-02-14 Matsushita Electric Ind Co Ltd 磁気抵抗効果を利用したメモリー素子および増幅素子
EP0875901B1 (en) * 1997-04-28 2006-08-09 Canon Kabushiki Kaisha Magnetic thin-film memory element utilizing GMR effect, and magnetic thin-film memory
JP3891511B2 (ja) 1997-06-12 2007-03-14 キヤノン株式会社 磁性薄膜メモリ及びその記録再生方法
JP2000090658A (ja) 1998-09-09 2000-03-31 Sanyo Electric Co Ltd 磁気メモリ素子
US6436526B1 (en) 1999-06-17 2002-08-20 Matsushita Electric Industrial Co., Ltd. Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell
US6233172B1 (en) 1999-12-17 2001-05-15 Motorola, Inc. Magnetic element with dual magnetic states and fabrication method thereof
US6404674B1 (en) * 2001-04-02 2002-06-11 Hewlett Packard Company Intellectual Property Administrator Cladded read-write conductor for a pinned-on-the-fly soft reference layer
US6576969B2 (en) * 2001-09-25 2003-06-10 Hewlett-Packard Development Company, L.P. Magneto-resistive device having soft reference layer
US6795281B2 (en) * 2001-09-25 2004-09-21 Hewlett-Packard Development Company, L.P. Magneto-resistive device including soft synthetic ferrimagnet reference layer
US6538917B1 (en) 2001-09-25 2003-03-25 Hewlett-Packard Development Company, L.P. Read methods for magneto-resistive device having soft reference layer
US7193889B2 (en) * 2004-02-11 2007-03-20 Hewlett-Packard Development Company, Lp. Switching of MRAM devices having soft magnetic reference layers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999014760A1 (de) * 1997-09-17 1999-03-25 Infineon Technologies Ag Speicherzellenanordnung und deren verwendung als magnetisches ram und als assoziativer speicher

Also Published As

Publication number Publication date
EP1449220A2 (de) 2004-08-25
DE50202668D1 (de) 2005-05-04
CN1599937A (zh) 2005-03-23
JP2005512316A (ja) 2005-04-28
JP4219814B2 (ja) 2009-02-04
EP1449220B1 (de) 2005-03-30
WO2003049120A2 (de) 2003-06-12
KR100613536B1 (ko) 2006-08-16
WO2003049120A3 (de) 2004-02-05
DE10158795A1 (de) 2003-06-18
US20050116308A1 (en) 2005-06-02
KR20050044613A (ko) 2005-05-12
US7369426B2 (en) 2008-05-06
TW588355B (en) 2004-05-21
TW200301481A (en) 2003-07-01

Similar Documents

Publication Publication Date Title
DE2422927C2 (de) Integrierte Anordnung magnetischer Wiedergabeelemente
DE69735780T2 (de) Ferromagnetischer Speicher vom fip-flop Typ
EP1105878B1 (de) Speicherzellenanordnung und verfahren zu deren herstellung
DE69932800T2 (de) Anordnung mit einer ersten und einer zweiten ferromagnetischen schicht getrennt durch eine nicht-magnetische abstandsschicht
EP1019913B1 (de) Speicherzellenanordnung
DE60037790T2 (de) Magnetisches messsystem mit irreversibler charakteristik, sowie methode zur erzeugung, reparatur und verwendung eines solchen systems
DE60013079T2 (de) Doppeltes magnetisches Element mit zwei magnetischen Zuständen und Herstellungsverfahren dafür
DE60108543T2 (de) Verbesserte Referenzschichtstruktur in einer magnetischen Speicherzelle
DE19807361A1 (de) Abschirmung gegen magnetische Streustrahlung für einen nichtflüchtigen MRAM
WO2001094963A2 (de) Wheatstonebrücke, beinhaltend brückenelemente, bestehend aus einem spin-valve-system, sowie ein verfahren zu deren herstellung
EP1119860B1 (de) Magnetoresistiver speicher mit erhöhter störsicherheit
DE102007034256A1 (de) Rekonfigurierbare magnetische Logikschaltungsanordnung und Verfahren zur Herstellung und zum Betreiben derartiger Logikeinrichtungen
DE112013006657T5 (de) Hochstabiler spintronischer Speicher
DE2553754A1 (de) Verfahren zur herstellung eines magnetischen einzelwanddomaenensystems mit hoher domaenenpackungsdichte
DE10305823A1 (de) Magnetowiderstandseffekt-Element und Magnetspeicher mit einem solchen
EP1412948A2 (de) Magnetische speichereinheit und magnetisches speicherarray
DE112012004304T5 (de) Magnetoresistiver Direktzugriffsspeicher mit Mehrbit-Spinmomenttransfer mit einem einzelnen Stapel von Magnettunnelübergängen
DE102004024377A1 (de) Wärmeunterstützte Schaltarraykonfiguration für MRAM
DE10158795B4 (de) Magnetoresistive Speicherzelle mit dynamischer Referenzschicht
DE19854519A1 (de) GMR-Kopf, Verfahren für dessen Herstellung und Magnetplattenlaufwerk mit Verwendung des Kopfes
DE69723963T2 (de) Seitliche magento-elektronische vorrichtung unter ausnutzung eines quasi zwei-dimensionalen elektrogases
DE102006008264B4 (de) MRAM Zelle mit Domänenwandumschaltung und Feldauswahl
DE102007032379B4 (de) Magnettransistorstruktur
DE60207006T2 (de) Magneto-resistiver Film und Speicher mit diesem Film
WO2001018816A1 (de) Speicherzellenanordnung und verfahren zu deren betrieb

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee