JP2005530340A - スイッチング磁界が低減された磁気抵抗ランダムアクセスメモリ - Google Patents
スイッチング磁界が低減された磁気抵抗ランダムアクセスメモリ Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
本明細書では、アスペクト比が2に等しい場合の平面形状が示されている(図2参照)。MRAMデバイス10は、好適な実施形態では楕円形であり、この形状によって形状異方性がスイッチング磁界変動に及ぼす効果を最小化することができ、さらに、フォトリソグラフィ処理を使用して素子の横方向寸法を縮小することが一層容易になる。しかしながら、MRAMデバイス10は円形、正方形、矩形、又は菱形のような他の形状とすることができるが、説明を簡単にし、性能改善のために楕円形の場合を示している。
Claims (4)
- スイッチング磁界を有する磁気抵抗トンネル接合メモリセルであって、
印加磁界の無い状態で好適な方向に固定される合成磁気モーメント・ベクトルを有する第1磁化領域と、
磁気抵抗トンネル接合を形成すべく前記第1磁化領域上に配置された電気絶縁材料と、
前記電気絶縁材料上に配置され、異方性の磁化容易軸を有し、かつ、前記第1磁化領域の磁気モーメント・ベクトルに対して平行、又は反平行に配向された合成磁気モーメント・ベクトルを有する第2磁化領域とを備え、
前記磁気抵抗トンネル接合メモリセルはトグル書き込みモードで動作し、
前記第2磁化領域内において前記異方性の磁化容易軸に沿ったバイアス磁界が印加磁界によって生成されて前記スイッチング磁界が変更される、磁気抵抗トンネル接合メモリセル。 - スイッチング磁界を有する磁気抵抗トンネル接合メモリセルであって、
印加磁界の無い状態で好適な方向に固定される合成磁気モーメント・ベクトルを有し、かつ、厚さ及びフリンジ磁界を有する第1磁化領域と、
磁気抵抗トンネル接合を形成すべく前記第1磁化領域上に配置された電気絶縁材料と、
前記電気絶縁材料上に配置され、異方性の磁化容易軸を有し、かつ、前記第1磁化領域の磁気モーメント・ベクトルに対して平行、又は反平行に配向された合成磁気モーメント・ベクトルを有する第2磁化領域とを備え、
前記磁気抵抗トンネル接合メモリセルはトグル書き込みモードで動作し、
前記フリンジ磁界は、前記第2磁化領域内において前記異方性の磁化容易軸に沿ったバイアス磁界を生成する、磁気抵抗トンネル接合メモリセル。 - スイッチング磁界を有する磁気抵抗トンネル接合メモリセルであって、
印加磁界の無い状態で好適な方向に固定される合成磁気モーメント・ベクトルを有し、かつ、フリンジ磁界を有する、ある厚さの第1磁化領域と、
磁気抵抗トンネル接合を形成すべく前記第1磁化領域上に配置された電気絶縁材料と、
前記電気絶縁材料上に配置され、異方性の磁化容易軸を有し、かつ、前記第1磁化領域の磁気モーメント・ベクトルに対して平行、又は反平行に配向された合成磁気モーメント・ベクトルを有する第2磁化領域とを備え、
前記第1及び第2磁化領域のうちの少なくとも一つの磁化領域は、反強磁性結合されたN個の強磁性層を含み、Nは2以上の整数であり、
前記磁気抵抗トンネル接合メモリセルは、トグル書き込みモードで動作するように構成され、
前記フリンジ磁界は、前記第2磁化領域内において前記異方性の磁化容易軸に沿ったバイアス磁界を生成する、磁気抵抗トンネル接合メモリセル。 - 磁気抵抗トンネル接合メモリセルのスイッチング磁界を低減する方法であって、
表面を形成する基板を提供する工程と、
厚さ、磁化反転容量、及び合成磁気モーメント・ベクトルを有する磁化固定領域を支持する工程であって、前記合成磁気モーメント・ベクトルは印加磁界が有る状態及び無い状態の両方の状態において好適な方向に配向し、前記磁化固定領域はフリンジ磁界を有する、前記磁化固定領域を支持する工程と、
電気絶縁材料を前記磁化固定領域上に配置させる工程と、
磁化容易軸、合成磁気モーメント・ベクトル、及び磁化反転容量を有する磁化自由領域を前記電気絶縁材料上に配置する工程であって、前記合成磁気モーメント・ベクトルは、前記磁化固定領域の前記合成磁気モーメント・ベクトルに対して平行及び反平行のいずれかに配向可能であり、前記磁化自由領域は、反強磁性結合するN個の強磁性層を含む複合反強磁性層材料を含み、Nは2以上の整数であり、N個の強磁性層の各々は磁気モーメント・ベクトルを有し、隣接するN個の強磁性材料層の各々の磁気モーメント・ベクトルは反平行に配向され、前記フリンジ磁界は前記磁化自由領域内でバイアス磁界を生成する、前記磁化自由領域を配置する工程と、
前記磁気抵抗トンネル接合メモリセルをトグル書き込みモードで動作させる工程とを備える方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/173,907 US6633498B1 (en) | 2002-06-18 | 2002-06-18 | Magnetoresistive random access memory with reduced switching field |
PCT/US2003/017522 WO2003107350A2 (en) | 2002-06-18 | 2003-06-04 | Magnetoresistive random access memory with reduced switching field |
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JP2005530340A true JP2005530340A (ja) | 2005-10-06 |
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US (1) | US6633498B1 (ja) |
EP (1) | EP1527455A2 (ja) |
JP (1) | JP2005530340A (ja) |
KR (1) | KR20050013215A (ja) |
CN (1) | CN1729537B (ja) |
AU (1) | AU2003240521A1 (ja) |
WO (1) | WO2003107350A2 (ja) |
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JP2007052902A (ja) * | 2005-08-03 | 2007-03-01 | Ind Technol Res Inst | 低電流を有する磁気抵抗ランダムアクセスにおける磁気モーメントの切換え方法 |
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- 2003-06-04 CN CN03814154XA patent/CN1729537B/zh not_active Expired - Fee Related
- 2003-06-04 EP EP03731532A patent/EP1527455A2/en not_active Withdrawn
- 2003-06-04 KR KR10-2004-7020624A patent/KR20050013215A/ko active IP Right Grant
- 2003-06-04 AU AU2003240521A patent/AU2003240521A1/en not_active Abandoned
- 2003-06-04 WO PCT/US2003/017522 patent/WO2003107350A2/en active Application Filing
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JP2005175012A (ja) * | 2003-12-08 | 2005-06-30 | Sony Corp | 磁気メモリ |
JP4720081B2 (ja) * | 2003-12-08 | 2011-07-13 | ソニー株式会社 | 磁気メモリ |
JP2006165539A (ja) * | 2004-11-18 | 2006-06-22 | Maglabs Inc | 積層トグルメモリセルを有する磁気ランダムアクセスメモリおよび選択されたセルを書き込むための方法 |
JP2007052902A (ja) * | 2005-08-03 | 2007-03-01 | Ind Technol Res Inst | 低電流を有する磁気抵抗ランダムアクセスにおける磁気モーメントの切換え方法 |
JP4668864B2 (ja) * | 2005-08-03 | 2011-04-13 | インダストリアル テクノロジー リサーチ インスティテュート | 低電流を有する磁気抵抗ランダムアクセスにおける磁気モーメントの切換え方法 |
JP2008010573A (ja) * | 2006-06-28 | 2008-01-17 | Toshiba Corp | 磁気記憶装置 |
US7505306B2 (en) | 2006-06-28 | 2009-03-17 | Kabushiki Kaisha Toshiba | Magnetic memory device |
Also Published As
Publication number | Publication date |
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KR20050013215A (ko) | 2005-02-03 |
WO2003107350B1 (en) | 2004-07-15 |
EP1527455A2 (en) | 2005-05-04 |
WO2003107350A3 (en) | 2004-04-22 |
AU2003240521A1 (en) | 2003-12-31 |
CN1729537A (zh) | 2006-02-01 |
WO2003107350A2 (en) | 2003-12-24 |
US6633498B1 (en) | 2003-10-14 |
CN1729537B (zh) | 2010-04-28 |
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