CN1729537A - 具有减小的翻转磁场的磁致电阻随机存取存储器 - Google Patents
具有减小的翻转磁场的磁致电阻随机存取存储器 Download PDFInfo
- Publication number
- CN1729537A CN1729537A CNA03814154XA CN03814154A CN1729537A CN 1729537 A CN1729537 A CN 1729537A CN A03814154X A CNA03814154X A CN A03814154XA CN 03814154 A CN03814154 A CN 03814154A CN 1729537 A CN1729537 A CN 1729537A
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- China
- Prior art keywords
- magnetic
- magnetic area
- area
- field
- synthetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/173,907 | 2002-06-18 | ||
US10/173,907 US6633498B1 (en) | 2002-06-18 | 2002-06-18 | Magnetoresistive random access memory with reduced switching field |
PCT/US2003/017522 WO2003107350A2 (en) | 2002-06-18 | 2003-06-04 | Magnetoresistive random access memory with reduced switching field |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1729537A true CN1729537A (zh) | 2006-02-01 |
CN1729537B CN1729537B (zh) | 2010-04-28 |
Family
ID=28791510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03814154XA Expired - Fee Related CN1729537B (zh) | 2002-06-18 | 2003-06-04 | 具有减小的翻转磁场的磁致电阻随机存取存储器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6633498B1 (zh) |
EP (1) | EP1527455A2 (zh) |
JP (1) | JP2005530340A (zh) |
KR (1) | KR20050013215A (zh) |
CN (1) | CN1729537B (zh) |
AU (1) | AU2003240521A1 (zh) |
WO (1) | WO2003107350A2 (zh) |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7095646B2 (en) * | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
US6881993B2 (en) * | 2002-08-28 | 2005-04-19 | Micron Technology, Inc. | Device having reduced diffusion through ferromagnetic materials |
US6873542B2 (en) * | 2002-10-03 | 2005-03-29 | International Business Machines Corporation | Antiferromagnetically coupled bi-layer sensor for magnetic random access memory |
US6898112B2 (en) * | 2002-12-18 | 2005-05-24 | Freescale Semiconductor, Inc. | Synthetic antiferromagnetic structure for magnetoelectronic devices |
US8471263B2 (en) * | 2003-06-24 | 2013-06-25 | Sang-Yun Lee | Information storage system which includes a bonded semiconductor structure |
US7045838B2 (en) * | 2003-10-31 | 2006-05-16 | International Business Machines Corporation | Techniques for coupling in semiconductor devices and magnetic device using these techniques |
JP4720081B2 (ja) * | 2003-12-08 | 2011-07-13 | ソニー株式会社 | 磁気メモリ |
US7027321B2 (en) * | 2004-01-10 | 2006-04-11 | Honeywell International Inc. | Tunneling anisotropic magnetoresistive device and method of operation |
JP4626149B2 (ja) * | 2004-01-20 | 2011-02-02 | ソニー株式会社 | 磁気メモリの初期化方法 |
JP2005260174A (ja) * | 2004-03-15 | 2005-09-22 | Sony Corp | 磁気メモリ及びその記録方法 |
JP2005260175A (ja) * | 2004-03-15 | 2005-09-22 | Sony Corp | 磁気メモリ及びその記録方法 |
FR2869445B1 (fr) * | 2004-04-26 | 2006-07-07 | St Microelectronics Sa | Element de memoire vive magnetique |
US7274057B2 (en) * | 2004-04-26 | 2007-09-25 | International Business Machines Corporation | Techniques for spin-flop switching with offset field |
US7102916B2 (en) * | 2004-06-30 | 2006-09-05 | International Business Machines Corporation | Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption |
US7576956B2 (en) * | 2004-07-26 | 2009-08-18 | Grandis Inc. | Magnetic tunnel junction having diffusion stop layer |
US7123507B2 (en) * | 2004-08-19 | 2006-10-17 | International Business Machines Corporation | Using permanent magnets in MRAM to assist write operation |
US7355884B2 (en) | 2004-10-08 | 2008-04-08 | Kabushiki Kaisha Toshiba | Magnetoresistive element |
US6992910B1 (en) * | 2004-11-18 | 2006-01-31 | Maglabs, Inc. | Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell |
US7129098B2 (en) * | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
FR2879472A1 (fr) | 2004-12-21 | 2006-06-23 | Pascal Useldinger | Tapis d'entrainement au golf |
JP4012196B2 (ja) * | 2004-12-22 | 2007-11-21 | 株式会社東芝 | 磁気ランダムアクセスメモリのデータ書き込み方法 |
US7622784B2 (en) * | 2005-01-10 | 2009-11-24 | International Business Machines Corporation | MRAM device with improved stack structure and offset field for low-power toggle mode writing |
US7133309B2 (en) * | 2005-01-10 | 2006-11-07 | International Business Machines Corporation | Method and structure for generating offset fields for use in MRAM devices |
US7285836B2 (en) * | 2005-03-09 | 2007-10-23 | Maglabs, Inc. | Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing |
US7453720B2 (en) * | 2005-05-26 | 2008-11-18 | Maglabs, Inc. | Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing |
US7230845B1 (en) | 2005-07-29 | 2007-06-12 | Grandis, Inc. | Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices |
KR100915975B1 (ko) * | 2005-08-03 | 2009-09-10 | 인더스트리얼 테크놀로지 리서치 인스티튜트 | 저전류로 자기저항 랜덤 액세스 메모리의 자기 모멘트를전환하는 방법 |
US7420837B2 (en) * | 2005-08-03 | 2008-09-02 | Industrial Technology Research Institute | Method for switching magnetic moment in magnetoresistive random access memory with low current |
US7973349B2 (en) | 2005-09-20 | 2011-07-05 | Grandis Inc. | Magnetic device having multilayered free ferromagnetic layer |
US7777261B2 (en) * | 2005-09-20 | 2010-08-17 | Grandis Inc. | Magnetic device having stabilized free ferromagnetic layer |
US7859034B2 (en) * | 2005-09-20 | 2010-12-28 | Grandis Inc. | Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer |
US7569902B2 (en) * | 2005-10-28 | 2009-08-04 | Board Of Trustees Of The University Of Alabama | Enhanced toggle-MRAM memory device |
US7301801B2 (en) * | 2005-10-28 | 2007-11-27 | International Business Machines Corporation | Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers |
US7430135B2 (en) * | 2005-12-23 | 2008-09-30 | Grandis Inc. | Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density |
US20070187785A1 (en) * | 2006-02-16 | 2007-08-16 | Chien-Chung Hung | Magnetic memory cell and manufacturing method thereof |
TWI300224B (en) * | 2006-02-21 | 2008-08-21 | Ind Tech Res Inst | Structure of magnetic memory cell and magnetic memory device |
US20080055792A1 (en) * | 2006-03-07 | 2008-03-06 | Agency For Science, Technology And Research | Memory cells and devices having magnetoresistive tunnel junction with guided magnetic moment switching and method |
US20070246787A1 (en) * | 2006-03-29 | 2007-10-25 | Lien-Chang Wang | On-plug magnetic tunnel junction devices based on spin torque transfer switching |
TWI320929B (en) * | 2006-04-18 | 2010-02-21 | Ind Tech Res Inst | Structure and access method for magnetic memory cell structure and circuit of magnetic memory |
TWI300225B (en) * | 2006-04-28 | 2008-08-21 | Ind Tech Res Inst | Method for accessing data on magnetic memory |
US7903452B2 (en) * | 2006-06-23 | 2011-03-08 | Qimonda Ag | Magnetoresistive memory cell |
JP4150047B2 (ja) * | 2006-06-28 | 2008-09-17 | 株式会社東芝 | 磁気記憶装置 |
US7851840B2 (en) * | 2006-09-13 | 2010-12-14 | Grandis Inc. | Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier |
TWI320930B (en) * | 2007-01-29 | 2010-02-21 | Ind Tech Res Inst | Direct writing method on magnetic memory cell and magetic memory cell structure |
TWI324344B (en) * | 2007-02-16 | 2010-05-01 | Ind Tech Res Inst | Writing method on magnetic memory cell and magetic memory array structure |
TWI333208B (en) * | 2007-03-26 | 2010-11-11 | Ind Tech Res Inst | Magnetic memory and method for manufacturing the same |
US7599215B2 (en) * | 2007-03-30 | 2009-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetoresistive random access memory device with small-angle toggle write lines |
US7957179B2 (en) | 2007-06-27 | 2011-06-07 | Grandis Inc. | Magnetic shielding in magnetic multilayer structures |
TW200907964A (en) * | 2007-08-09 | 2009-02-16 | Ind Tech Res Inst | Structure of magnetic memory cell and magnetic memory device |
TWI415124B (zh) * | 2007-08-09 | 2013-11-11 | Ind Tech Res Inst | 磁性隨機存取記憶體 |
US7982275B2 (en) | 2007-08-22 | 2011-07-19 | Grandis Inc. | Magnetic element having low saturation magnetization |
US8659852B2 (en) | 2008-04-21 | 2014-02-25 | Seagate Technology Llc | Write-once magentic junction memory array |
US7855911B2 (en) | 2008-05-23 | 2010-12-21 | Seagate Technology Llc | Reconfigurable magnetic logic device using spin torque |
US7852663B2 (en) | 2008-05-23 | 2010-12-14 | Seagate Technology Llc | Nonvolatile programmable logic gates and adders |
US7804709B2 (en) * | 2008-07-18 | 2010-09-28 | Seagate Technology Llc | Diode assisted switching spin-transfer torque memory unit |
US8223532B2 (en) | 2008-08-07 | 2012-07-17 | Seagate Technology Llc | Magnetic field assisted STRAM cells |
US8054677B2 (en) | 2008-08-07 | 2011-11-08 | Seagate Technology Llc | Magnetic memory with strain-assisted exchange coupling switch |
US7881098B2 (en) | 2008-08-26 | 2011-02-01 | Seagate Technology Llc | Memory with separate read and write paths |
US7894248B2 (en) | 2008-09-12 | 2011-02-22 | Grandis Inc. | Programmable and redundant circuitry based on magnetic tunnel junction (MTJ) |
US7985994B2 (en) | 2008-09-29 | 2011-07-26 | Seagate Technology Llc | Flux-closed STRAM with electronically reflective insulative spacer |
US7746687B2 (en) | 2008-09-30 | 2010-06-29 | Seagate Technology, Llc | Thermally assisted multi-bit MRAM |
US8169810B2 (en) | 2008-10-08 | 2012-05-01 | Seagate Technology Llc | Magnetic memory with asymmetric energy barrier |
US8487390B2 (en) * | 2008-10-08 | 2013-07-16 | Seagate Technology Llc | Memory cell with stress-induced anisotropy |
US8089132B2 (en) * | 2008-10-09 | 2012-01-03 | Seagate Technology Llc | Magnetic memory with phonon glass electron crystal material |
US8039913B2 (en) | 2008-10-09 | 2011-10-18 | Seagate Technology Llc | Magnetic stack with laminated layer |
US7880209B2 (en) * | 2008-10-09 | 2011-02-01 | Seagate Technology Llc | MRAM cells including coupled free ferromagnetic layers for stabilization |
US8217478B2 (en) | 2008-10-10 | 2012-07-10 | Seagate Technology Llc | Magnetic stack with oxide to reduce switching current |
US8045366B2 (en) | 2008-11-05 | 2011-10-25 | Seagate Technology Llc | STRAM with composite free magnetic element |
US8043732B2 (en) | 2008-11-11 | 2011-10-25 | Seagate Technology Llc | Memory cell with radial barrier |
US7826181B2 (en) | 2008-11-12 | 2010-11-02 | Seagate Technology Llc | Magnetic memory with porous non-conductive current confinement layer |
US8289756B2 (en) | 2008-11-25 | 2012-10-16 | Seagate Technology Llc | Non volatile memory including stabilizing structures |
US7826259B2 (en) | 2009-01-29 | 2010-11-02 | Seagate Technology Llc | Staggered STRAM cell |
US8053255B2 (en) | 2009-03-03 | 2011-11-08 | Seagate Technology Llc | STRAM with compensation element and method of making the same |
US7999338B2 (en) | 2009-07-13 | 2011-08-16 | Seagate Technology Llc | Magnetic stack having reference layers with orthogonal magnetization orientation directions |
US8411493B2 (en) | 2009-10-30 | 2013-04-02 | Honeywell International Inc. | Selection device for a spin-torque transfer magnetic random access memory |
US8772886B2 (en) * | 2010-07-26 | 2014-07-08 | Avalanche Technology, Inc. | Spin transfer torque magnetic random access memory (STTMRAM) having graded synthetic free layer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3163853A (en) * | 1958-02-20 | 1964-12-29 | Sperry Rand Corp | Magnetic storage thin film |
US5959880A (en) * | 1997-12-18 | 1999-09-28 | Motorola, Inc. | Low aspect ratio magnetoresistive tunneling junction |
US5966323A (en) * | 1997-12-18 | 1999-10-12 | Motorola, Inc. | Low switching field magnetoresistive tunneling junction for high density arrays |
US6127045A (en) * | 1998-05-13 | 2000-10-03 | International Business Machines Corporation | Magnetic tunnel junction device with optimized ferromagnetic layer |
DE19823826A1 (de) * | 1998-05-28 | 1999-12-02 | Burkhard Hillebrands | MRAM-Speicher sowie Verfahren zum Lesen/Schreiben digitaler Information in einen derartigen Speicher |
US5953248A (en) * | 1998-07-20 | 1999-09-14 | Motorola, Inc. | Low switching field magnetic tunneling junction for high density arrays |
JP2001084756A (ja) * | 1999-09-17 | 2001-03-30 | Sony Corp | 磁化駆動方法、磁気機能素子および磁気装置 |
US6538921B2 (en) * | 2000-08-17 | 2003-03-25 | Nve Corporation | Circuit selection of magnetic memory cells and related cell structures |
US6351409B1 (en) * | 2001-01-04 | 2002-02-26 | Motorola, Inc. | MRAM write apparatus and method |
US6545906B1 (en) * | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
-
2002
- 2002-06-18 US US10/173,907 patent/US6633498B1/en not_active Expired - Fee Related
-
2003
- 2003-06-04 WO PCT/US2003/017522 patent/WO2003107350A2/en active Application Filing
- 2003-06-04 KR KR10-2004-7020624A patent/KR20050013215A/ko active IP Right Grant
- 2003-06-04 CN CN03814154XA patent/CN1729537B/zh not_active Expired - Fee Related
- 2003-06-04 EP EP03731532A patent/EP1527455A2/en not_active Withdrawn
- 2003-06-04 JP JP2004514080A patent/JP2005530340A/ja active Pending
- 2003-06-04 AU AU2003240521A patent/AU2003240521A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20050013215A (ko) | 2005-02-03 |
JP2005530340A (ja) | 2005-10-06 |
EP1527455A2 (en) | 2005-05-04 |
CN1729537B (zh) | 2010-04-28 |
US6633498B1 (en) | 2003-10-14 |
WO2003107350B1 (en) | 2004-07-15 |
AU2003240521A1 (en) | 2003-12-31 |
WO2003107350A3 (en) | 2004-04-22 |
WO2003107350A2 (en) | 2003-12-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090306 Address after: Arizona USA Applicant after: Everspin Technologies Inc. Address before: Texas in the United States Applicant before: Fisical Semiconductor Inc. |
|
ASS | Succession or assignment of patent right |
Owner name: EVERSPIN TECHNOLOGIES, INC. Free format text: FORMER OWNER: FREESCALE SEMICONDUCTOR INC. Effective date: 20090306 |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100428 Termination date: 20110604 |