CN115917648A - 一种存储器 - Google Patents

一种存储器 Download PDF

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Publication number
CN115917648A
CN115917648A CN202080102289.1A CN202080102289A CN115917648A CN 115917648 A CN115917648 A CN 115917648A CN 202080102289 A CN202080102289 A CN 202080102289A CN 115917648 A CN115917648 A CN 115917648A
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CN
China
Prior art keywords
mtj
bit line
memory
state
resistance value
Prior art date
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Pending
Application number
CN202080102289.1A
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English (en)
Inventor
周雪
秦青
路鹏
朱靖华
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN115917648A publication Critical patent/CN115917648A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2255—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5657—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using ferroelectric storage elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

本申请的实施例提供一种存储器，涉及存储领域，能够在保证写入灵活性的情况下，能够降低存储器的面积和功耗。存储器，包括阵列分布的多个存储单元，所述存储单元包括轨道矩提供线；其中，第一MTJ的自由层连接所述自旋轨道矩提供线，所述第二MTJ的自由层连接所述轨道矩提供线；轨道矩提供线上还连接有第一位线、第二位线和第三位线，第一位线和第二位线在所述轨道矩提供线上的连接端分处于所述第一MTJ和第二MTJ的两侧，所述第三位线在所述轨道矩提供线上的连接端在所述第一MTJ和第二MTJ之间。

Description

PCT国内申请，说明书已公开。

Claims (17)

  1. PCT国内申请，权利要求书已公开。
CN202080102289.1A 2020-08-31 2020-08-31 一种存储器 Pending CN115917648A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/112729 WO2022041278A1 (zh) 2020-08-31 2020-08-31 一种存储器

Publications (1)

Publication Number Publication Date
CN115917648A true CN115917648A (zh) 2023-04-04

Family

ID=80354423

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080102289.1A Pending CN115917648A (zh) 2020-08-31 2020-08-31 一种存储器

Country Status (3)

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EP (1) EP4207200A4 (zh)
CN (1) CN115917648A (zh)
WO (1) WO2022041278A1 (zh)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10103313A1 (de) * 2001-01-25 2002-08-22 Infineon Technologies Ag MRAM-Anordnung
US6985383B2 (en) * 2003-10-20 2006-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Reference generator for multilevel nonlinear resistivity memory storage elements
US7045368B2 (en) * 2004-05-19 2006-05-16 Headway Technologies, Inc. MRAM cell structure and method of fabrication
JP5756760B2 (ja) * 2010-01-13 2015-07-29 株式会社日立製作所 磁気メモリ、磁気メモリの製造方法、及び、磁気メモリの駆動方法
US8804413B2 (en) * 2012-02-07 2014-08-12 Qualcomm Incorporated Multi-free layer MTJ and multi-terminal read circuit with concurrent and differential sensing
US9881660B2 (en) * 2015-12-14 2018-01-30 Kabushiki Kaisha Toshiba Magnetic memory
CN110660435B (zh) * 2018-06-28 2021-09-21 中电海康集团有限公司 Mram存储器单元、阵列及存储器
JP6850273B2 (ja) * 2018-07-10 2021-03-31 株式会社東芝 磁気記憶装置
US10483457B1 (en) * 2018-08-14 2019-11-19 Qualcomm Incorporated Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array
US10991406B2 (en) * 2018-11-26 2021-04-27 Arm Limited Method, system and device for magnetic memory
CN111739570B (zh) * 2019-03-25 2022-05-31 中电海康集团有限公司 Sot-mram存储单元及sot-mram存储器
CN111354392B (zh) * 2020-03-06 2023-08-08 上海新微技术研发中心有限公司 磁性存储器阵列及读写控制方法
CN111508549B (zh) * 2020-04-21 2022-06-24 浙江驰拓科技有限公司 一种sot-mram的测试结构及其测试方法

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Publication number Publication date
WO2022041278A1 (zh) 2022-03-03
EP4207200A4 (en) 2023-12-13
EP4207200A1 (en) 2023-07-05

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