KR100608122B1 - 패턴의 형성 방법 및 배선 패턴의 형성 방법 - Google Patents
패턴의 형성 방법 및 배선 패턴의 형성 방법 Download PDFInfo
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- KR100608122B1 KR100608122B1 KR1020040063269A KR20040063269A KR100608122B1 KR 100608122 B1 KR100608122 B1 KR 100608122B1 KR 1020040063269 A KR1020040063269 A KR 1020040063269A KR 20040063269 A KR20040063269 A KR 20040063269A KR 100608122 B1 KR100608122 B1 KR 100608122B1
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- photothermal conversion
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- 238000000034 method Methods 0.000 title claims abstract description 192
- 239000000463 material Substances 0.000 claims abstract description 271
- 239000010409 thin film Substances 0.000 claims abstract description 204
- 238000006243 chemical reaction Methods 0.000 claims abstract description 147
- 230000001678 irradiating effect Effects 0.000 claims abstract description 24
- 238000000059 patterning Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 122
- 239000010408 film Substances 0.000 claims description 64
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 230000007261 regionalization Effects 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000000178 monomer Substances 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 206
- 239000000975 dye Substances 0.000 description 96
- 239000007788 liquid Substances 0.000 description 62
- 239000007789 gas Substances 0.000 description 41
- 239000010419 fine particle Substances 0.000 description 33
- 229920005989 resin Polymers 0.000 description 29
- 239000011347 resin Substances 0.000 description 29
- 230000008569 process Effects 0.000 description 18
- 238000000859 sublimation Methods 0.000 description 18
- 230000008022 sublimation Effects 0.000 description 18
- 238000000576 coating method Methods 0.000 description 15
- 239000002904 solvent Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 238000000018 DNA microarray Methods 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 238000001035 drying Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000012528 membrane Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- -1 polyethylene terephthalate Polymers 0.000 description 9
- 238000007599 discharging Methods 0.000 description 8
- 239000011344 liquid material Substances 0.000 description 8
- 238000005192 partition Methods 0.000 description 8
- 239000000049 pigment Substances 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 229940100890 silver compound Drugs 0.000 description 7
- 150000003379 silver compounds Chemical class 0.000 description 7
- 238000010304 firing Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- SPSSULHKWOKEEL-UHFFFAOYSA-N 2,4,6-trinitrotoluene Chemical compound CC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O SPSSULHKWOKEEL-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000007756 gravure coating Methods 0.000 description 4
- 230000001976 improved effect Effects 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000015 trinitrotoluene Substances 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- TZRXHJWUDPFEEY-UHFFFAOYSA-N Pentaerythritol Tetranitrate Chemical compound [O-][N+](=O)OCC(CO[N+]([O-])=O)(CO[N+]([O-])=O)CO[N+]([O-])=O TZRXHJWUDPFEEY-UHFFFAOYSA-N 0.000 description 3
- 239000000026 Pentaerythritol tetranitrate Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000004056 anthraquinones Chemical class 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000002612 dispersion medium Substances 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000010365 information processing Effects 0.000 description 3
- 229960004321 pentaerithrityl tetranitrate Drugs 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 108090000623 proteins and genes Proteins 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- 230000002940 repellent Effects 0.000 description 3
- 238000007763 reverse roll coating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 2
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
- JSOGDEOQBIUNTR-UHFFFAOYSA-N 2-(azidomethyl)oxirane Chemical compound [N-]=[N+]=NCC1CO1 JSOGDEOQBIUNTR-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229920001807 Urea-formaldehyde Polymers 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- SQNZJJAZBFDUTD-UHFFFAOYSA-N durene Chemical compound CC1=CC(C)=C(C)C=C1C SQNZJJAZBFDUTD-UHFFFAOYSA-N 0.000 description 2
- 238000004043 dyeing Methods 0.000 description 2
- 238000007765 extrusion coating Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 125000003709 fluoroalkyl group Chemical group 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 230000002068 genetic effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 230000009878 intermolecular interaction Effects 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000003847 radiation curing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- CAQYAZNFWDDMIT-UHFFFAOYSA-N 1-ethoxy-2-methoxyethane Chemical compound CCOCCOC CAQYAZNFWDDMIT-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical class COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- JGNPSJMNGPUQIW-UHFFFAOYSA-N [C].CC=C Chemical compound [C].CC=C JGNPSJMNGPUQIW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- CIZVQWNPBGYCGK-UHFFFAOYSA-N benzenediazonium Chemical group N#[N+]C1=CC=CC=C1 CIZVQWNPBGYCGK-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- HHNHBFLGXIUXCM-GFCCVEGCSA-N cyclohexylbenzene Chemical compound [CH]1CCCC[C@@H]1C1=CC=CC=C1 HHNHBFLGXIUXCM-GFCCVEGCSA-N 0.000 description 1
- 229930007927 cymene Natural products 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000986 disperse dye Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 125000005462 imide group Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- RSAZYXZUJROYKR-UHFFFAOYSA-N indophenol Chemical compound C1=CC(O)=CC=C1N=C1C=CC(=O)C=C1 RSAZYXZUJROYKR-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 125000003010 ionic group Chemical group 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical compound CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 description 1
- 229960004624 perflexane Drugs 0.000 description 1
- BPHQIXJDBIHMLT-UHFFFAOYSA-N perfluorodecane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F BPHQIXJDBIHMLT-UHFFFAOYSA-N 0.000 description 1
- ZJIJAJXFLBMLCK-UHFFFAOYSA-N perfluorohexane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ZJIJAJXFLBMLCK-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920002776 polycyclohexyl methacrylate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002338 polyhydroxyethylmethacrylate Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- IZMJMCDDWKSTTK-UHFFFAOYSA-N quinoline yellow Chemical compound C1=CC=CC2=NC(C3C(C4=CC=CC=C4C3=O)=O)=CC=C21 IZMJMCDDWKSTTK-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical group 0.000 description 1
- 238000009818 secondary granulation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/24—Ablative recording, e.g. by burning marks; Spark recording
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M2205/00—Printing methods or features related to printing methods; Location or type of the layers
- B41M2205/38—Intermediate layers; Layers between substrate and imaging layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
- B41M5/40—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography
- B41M5/46—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used characterised by the base backcoat, intermediate, or covering layers, e.g. for thermal transfer dye-donor or dye-receiver sheets; Heat, radiation filtering or absorbing means or layers; combined with other image registration layers or compositions; Special originals for reproduction by thermography characterised by the light-to-heat converting means; characterised by the heat or radiation filtering or absorbing means or layers
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Filters (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
- Laminated Bodies (AREA)
- Manufacturing Of Electric Cables (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (29)
- 승화성 재료를 포함하는 기재 상에 박막을 설치하고, 상기 기재에 대하여 광을 조사(照射)하여, 상기 광의 조사에 의해 발생하는 열에 의해 원하는 영역의 상기 승화성 재료를 승화시킴으로써, 상기 광이 조사된 조사 영역에 대응하는 상기 박막을 제거함으로써 상기 박막을 패터닝하며,상기 기재는 광 에너지를 열 에너지로 변환하는 광열 변환 재료를 포함하는 것을 특징으로 하는 패턴의 형성 방법.
- 제 1항에 있어서,상기 승화성 재료는 승화성 색소를 포함하는 것을 특징으로 하는 패턴의 형성 방법.
- 가스 발생 재료를 포함하는 기재 상에 박막을 설치하고, 상기 기재에 대하여 광을 조사하여, 상기 광의 조사에 의해 원하는 영역의 상기 가스 발생 재료로부터 가스를 발생시킴으로써, 상기 광이 조사된 조사 영역에 대응하는 상기 박막을 제거함으로써 상기 박막을 패터닝하며,상기 기재는 광 에너지를 열 에너지로 변환하는 광열 변환 재료를 포함하는 것을 특징으로 하는 패턴의 형성 방법.
- 제 1항 내지 제 3항 중 어느 한 항에 있어서,상기 박막은 유기 박막을 포함하는 것을 특징으로 하는 패턴의 형성 방법.
- 제 1항 또는 제 3항에 있어서,상기 박막은 단분자막을 포함하는 것을 특징으로 하는 패턴의 형성 방법.
- 제 1항 또는 제 3항에 있어서,상기 박막은 광 개시제를 포함하는 모노머(monomer)를 포함하는 것을 특징으로 하는 패턴의 형성 방법.
- 제 1항에 있어서,상기 승화성 재료는 상기 기재의 표면측 또는 이면측에 상기 기재 및 상기 박막과는 독립한 승화성 색소층으로서 형성되는 것을 특징으로 하는 패턴의 형성 방법.
- 제 7항에 있어서,상기 승화성 색소층은 상기 기재의 상기 박막이 설치된 한쪽의 면측에 설치되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 제 7항에 있어서,상기 승화성 색소층은 상기 박막과 인접하여 설치되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 제 7항에 있어서,상기 승화성 색소층은 상기 기재와 상기 박막 사이에 설치되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 제 1항에 있어서,상기 기재에 상기 승화성 재료가 혼재되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 삭제
- 제 7항에 있어서,상기 승화성 색소층에 상기 광열 변환 재료가 혼재되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 제 13항에 있어서,상기 광열 변환 재료를 포함하는 광열 변환층이 상기 기재, 상기 박막 및 상기 승화성 색소층과는 독립하여 설치되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 제 14항에 있어서,상기 광열 변환층과 상기 승화성 색소층은 인접하여 설치되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 제 14항에 있어서,상기 광열 변환층은 상기 기재의 상기 박막이 설치된 한쪽의 면측에 설치되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 제 14항에 있어서,상기 광열 변환층은 상기 기재와 상기 박막 사이에 설치되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 제 14항에 있어서,상기 광열 변환층은 상기 기재의 상기 박막이 설치되어 있지 않은 다른 쪽의 면측에 설치되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 제 13항에 있어서,상기 기재에 상기 광열 변환 재료가 혼재되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 제 13항에 있어서,상기 기재의 표면 및 이면 중 적어도 한쪽에 상기 광열 변환층을 형성하고,상기 광열 변환층의 상면에 상기 승화성 색소층을 형성하고,상기 승화성 색소층의 상면에 상기 박막을 형성하고,그 후, 상기 광의 조사를 하는 것을 특징으로 하는 패턴의 형성 방법.
- 제 14항에 있어서,상기 기재 또는 상기 광열 변환층과 상기 승화성 색소층 사이에, 광 조사 또는 가열에 의해 가스를 발생하는 가스 발생 재료를 포함하는 가스 발생층이 설치되어 있는 것을 특징으로 하는 패턴의 형성 방법.
- 제 1항 또는 제 3항에 있어서,상기 기재의 상기 박막이 설치된 한쪽의 면측으로부터 상기 광을 조사하는 것을 특징으로 하는 패턴의 형성 방법.
- 제 1항 또는 제 3항에 있어서,상기 기재의 상기 박막이 설치되어 있지 않은 다른 쪽의 면측으로부터 상기 광을 조사하는 것을 특징으로 하는 패턴의 형성 방법.
- 제 22항에 있어서,상기 박막, 상기 승화성 색소층, 상기 광열 변환층 및 상기 기재 중 적어도 한개의 광 투과율에 기초하여, 상기 한쪽의 면측 및 다른 쪽의 면측의 어느 쪽으로부터 상기 광을 조사할지를 결정하는 것을 특징으로 하는 패턴의 형성 방법.
- 제 1항에 있어서,상기 광은 상기 승화성 재료 및 상기 광열 변환 재료 중 적어도 한쪽에 대응한 파장을 갖는 것을 특징으로 하는 패턴의 형성 방법.
- 제 1항 또는 제 3항에 기재된 형성 방법에 의해 형성된 박막 패턴을 갖는 상기 기재 상에 배선 패턴을 형성하는 것을 특징으로 하는 배선 패턴의 형성 방법.
- 제 26항에 있어서,상기 박막 패턴이 형성된 기재 상에 배선 패턴 형성용 재료를 포함하는 액적을 배치하는 공정을 갖는 것을 특징으로 하는 배선 패턴의 형성 방법.
- 삭제
- 삭제
Applications Claiming Priority (2)
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JPJP-P-2003-00292469 | 2003-08-12 | ||
JP2003292469A JP4433722B2 (ja) | 2003-08-12 | 2003-08-12 | パターンの形成方法及び配線パターンの形成方法 |
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Country Status (5)
Country | Link |
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US (2) | US7172912B2 (ko) |
JP (1) | JP4433722B2 (ko) |
KR (1) | KR100608122B1 (ko) |
CN (1) | CN100421532C (ko) |
TW (1) | TWI242104B (ko) |
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JP4433722B2 (ja) * | 2003-08-12 | 2010-03-17 | セイコーエプソン株式会社 | パターンの形成方法及び配線パターンの形成方法 |
JP2006147827A (ja) * | 2004-11-19 | 2006-06-08 | Seiko Epson Corp | 配線パターンの形成方法、デバイスの製造方法、デバイス、及び電気光学装置、並びに電子機器 |
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JP2018053283A (ja) * | 2016-09-27 | 2018-04-05 | セイコーエプソン株式会社 | パターン形成方法、装飾品の製造方法、腕時計用ベルトの製造方法、配線実装構造の製造方法、半導体装置の製造方法、および、プリント配線基板の製造方法 |
JP6574873B1 (ja) * | 2018-05-25 | 2019-09-11 | 株式会社三和スクリーン銘板 | パネル部材の製造方法 |
CN109817827B (zh) * | 2019-01-22 | 2021-01-01 | 深圳市华星光电半导体显示技术有限公司 | Oled显示面板的制作设备及制作方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS62276505A (ja) | 1986-05-23 | 1987-12-01 | Mitsubishi Electric Corp | カラ−フイルタの製造方法 |
JPH0574704A (ja) | 1991-09-13 | 1993-03-26 | Seiko Epson Corp | 半導体層の形成方法 |
GB2305509A (en) * | 1995-09-19 | 1997-04-09 | Minnesota Mining & Mfg | Heat sensitive elements |
JP3731632B2 (ja) * | 1998-10-30 | 2006-01-05 | 信越化学工業株式会社 | 配線基板の製造方法 |
US6121130A (en) * | 1998-11-16 | 2000-09-19 | Chartered Semiconductor Manufacturing Ltd. | Laser curing of spin-on dielectric thin films |
JP3879312B2 (ja) | 1999-03-31 | 2007-02-14 | セイコーエプソン株式会社 | 膜の形成方法、及びデバイスの製造方法 |
US6521324B1 (en) * | 1999-11-30 | 2003-02-18 | 3M Innovative Properties Company | Thermal transfer of microstructured layers |
JP3578110B2 (ja) * | 2000-06-15 | 2004-10-20 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
JP4035968B2 (ja) * | 2000-06-30 | 2008-01-23 | セイコーエプソン株式会社 | 導電膜パターンの形成方法 |
JP2005062356A (ja) * | 2003-08-08 | 2005-03-10 | Seiko Epson Corp | パターンの形成方法及び配線パターンの形成方法、電気光学装置及び電子機器 |
JP4433722B2 (ja) * | 2003-08-12 | 2010-03-17 | セイコーエプソン株式会社 | パターンの形成方法及び配線パターンの形成方法 |
-
2003
- 2003-08-12 JP JP2003292469A patent/JP4433722B2/ja not_active Expired - Lifetime
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- 2004-07-26 US US10/898,344 patent/US7172912B2/en active Active
- 2004-08-05 TW TW093123499A patent/TWI242104B/zh active
- 2004-08-10 CN CNB2004100560669A patent/CN100421532C/zh not_active Expired - Lifetime
- 2004-08-11 KR KR1020040063269A patent/KR100608122B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
US7172912B2 (en) | 2007-02-06 |
JP2005058911A (ja) | 2005-03-10 |
TWI242104B (en) | 2005-10-21 |
CN100421532C (zh) | 2008-09-24 |
US20070010038A1 (en) | 2007-01-11 |
CN1582093A (zh) | 2005-02-16 |
US20050037275A1 (en) | 2005-02-17 |
TW200506515A (en) | 2005-02-16 |
KR20050017591A (ko) | 2005-02-22 |
JP4433722B2 (ja) | 2010-03-17 |
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