KR100582484B1 - 크기가 축소된 집적 회로의 제조에 사용하기에 적합한가스 주입 레이저 어닐링 방법 - Google Patents

크기가 축소된 집적 회로의 제조에 사용하기에 적합한가스 주입 레이저 어닐링 방법 Download PDF

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KR100582484B1
KR100582484B1 KR1020017000004A KR20017000004A KR100582484B1 KR 100582484 B1 KR100582484 B1 KR 100582484B1 KR 1020017000004 A KR1020017000004 A KR 1020017000004A KR 20017000004 A KR20017000004 A KR 20017000004A KR 100582484 B1 KR100582484 B1 KR 100582484B1
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silicon
mosfets
source
thickness
depth
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KR20010074629A (ko
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톨워소미트
웨이너쿠르트
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울트라테크 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020017000004A 1998-08-27 1998-11-25 크기가 축소된 집적 회로의 제조에 사용하기에 적합한가스 주입 레이저 어닐링 방법 Expired - Fee Related KR100582484B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/141,842 US5956603A (en) 1998-08-27 1998-08-27 Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits
US09/141,842 1998-08-27

Publications (2)

Publication Number Publication Date
KR20010074629A KR20010074629A (ko) 2001-08-04
KR100582484B1 true KR100582484B1 (ko) 2006-05-24

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KR1020017000004A Expired - Fee Related KR100582484B1 (ko) 1998-08-27 1998-11-25 크기가 축소된 집적 회로의 제조에 사용하기에 적합한가스 주입 레이저 어닐링 방법

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Country Link
US (1) US5956603A (https=)
EP (1) EP1121713B1 (https=)
JP (1) JP4295922B2 (https=)
KR (1) KR100582484B1 (https=)
DE (1) DE69837054T2 (https=)
TW (1) TW409293B (https=)
WO (1) WO2000013213A1 (https=)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521501B1 (en) * 1999-05-11 2003-02-18 Advanced Micro Devices, Inc. Method of forming a CMOS transistor having ultra shallow source and drain regions
US6586318B1 (en) * 1999-12-28 2003-07-01 Xerox Corporation Thin phosphorus nitride film as an N-type doping source used in laser doping technology
KR20010085722A (ko) * 2000-02-29 2001-09-07 추후제출 반도체 물질상에서의 선택적인 레이저 어닐
US6570656B1 (en) 2000-04-10 2003-05-27 Ultratech Stepper, Inc. Illumination fluence regulation system and method for use in thermal processing employed in the fabrication of reduced-dimension integrated circuits
US6645838B1 (en) * 2000-04-10 2003-11-11 Ultratech Stepper, Inc. Selective absorption process for forming an activated doped region in a semiconductor
US6635588B1 (en) * 2000-06-12 2003-10-21 Ultratech Stepper, Inc. Method for laser thermal processing using thermally induced reflectivity switch
JP4389359B2 (ja) * 2000-06-23 2009-12-24 日本電気株式会社 薄膜トランジスタ及びその製造方法
US6335253B1 (en) 2000-07-12 2002-01-01 Chartered Semiconductor Manufacturing Ltd. Method to form MOS transistors with shallow junctions using laser annealing
JP2002050764A (ja) * 2000-08-02 2002-02-15 Matsushita Electric Ind Co Ltd 薄膜トランジスタ、アレイ基板、液晶表示装置、有機ｅｌ表示装置およびその製造方法
US6391695B1 (en) * 2000-08-07 2002-05-21 Advanced Micro Devices, Inc. Double-gate transistor formed in a thermal process
US6635541B1 (en) * 2000-09-11 2003-10-21 Ultratech Stepper, Inc. Method for annealing using partial absorber layer exposed to radiant energy and article made with partial absorber layer
US6479821B1 (en) * 2000-09-11 2002-11-12 Ultratech Stepper, Inc. Thermally induced phase switch for laser thermal processing
JP2002184984A (ja) * 2000-10-26 2002-06-28 Hynix Semiconductor Inc 半導体素子の製造方法
US6365476B1 (en) 2000-10-27 2002-04-02 Ultratech Stepper, Inc. Laser thermal process for fabricating field-effect transistors
JP4845299B2 (ja) 2001-03-09 2011-12-28 富士通セミコンダクター株式会社 半導体装置の製造方法
US6720241B2 (en) * 2001-06-18 2004-04-13 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor device
JP4209606B2 (ja) * 2001-08-17 2009-01-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI282126B (en) * 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
US7317205B2 (en) * 2001-09-10 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing a semiconductor device
US7112517B2 (en) 2001-09-10 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Laser treatment device, laser treatment method, and semiconductor device fabrication method
US6734081B1 (en) * 2001-10-24 2004-05-11 Lsi Logic Corporation Shallow trench isolation structure for laser thermal processing
US6723634B1 (en) * 2002-03-14 2004-04-20 Advanced Micro Devices, Inc. Method of forming interconnects with improved barrier layer adhesion
US7135423B2 (en) * 2002-05-09 2006-11-14 Varian Semiconductor Equipment Associates, Inc Methods for forming low resistivity, ultrashallow junctions with low damage
US6803270B2 (en) * 2003-02-21 2004-10-12 International Business Machines Corporation CMOS performance enhancement using localized voids and extended defects
JP4589606B2 (ja) 2003-06-02 2010-12-01 住友重機械工業株式会社 半導体装置の製造方法
JP2005101196A (ja) * 2003-09-24 2005-04-14 Hitachi Ltd 半導体集積回路装置の製造方法
US7109087B2 (en) * 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
US6897118B1 (en) * 2004-02-11 2005-05-24 Chartered Semiconductor Manufacturing Ltd. Method of multiple pulse laser annealing to activate ultra-shallow junctions
US7145104B2 (en) * 2004-02-26 2006-12-05 Ultratech, Inc. Silicon layer for uniformizing temperature during photo-annealing
US7622374B2 (en) * 2005-12-29 2009-11-24 Infineon Technologies Ag Method of fabricating an integrated circuit
KR101323222B1 (ko) * 2006-03-08 2013-10-30 어플라이드 머티어리얼스, 인코포레이티드 기판상에 형성되는 구조체의 열적 프로세싱을 위한 장치 및 방법
US7569463B2 (en) * 2006-03-08 2009-08-04 Applied Materials, Inc. Method of thermal processing structures formed on a substrate
US7548364B2 (en) 2006-07-31 2009-06-16 Applied Materials, Inc. Ultra-fast beam dithering with surface acoustic wave modulator
US20080025354A1 (en) * 2006-07-31 2008-01-31 Dean Jennings Ultra-Fast Beam Dithering with Surface Acoustic Wave Modulator
US20080045041A1 (en) * 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Liquid Immersion Laser Spike Anneal
US7759773B2 (en) * 2007-02-26 2010-07-20 International Business Machines Corporation Semiconductor wafer structure with balanced reflectance and absorption characteristics for rapid thermal anneal uniformity
US7692275B2 (en) * 2007-02-26 2010-04-06 International Business Machines Corporation Structure and method for device-specific fill for improved anneal uniformity
US7679166B2 (en) * 2007-02-26 2010-03-16 International Business Machines Corporation Localized temperature control during rapid thermal anneal
US20090096066A1 (en) * 2007-10-10 2009-04-16 Anderson Brent A Structure and Method for Device-Specific Fill for Improved Anneal Uniformity
US7745909B2 (en) * 2007-02-26 2010-06-29 International Business Machines Corporation Localized temperature control during rapid thermal anneal
US7732353B2 (en) * 2007-04-18 2010-06-08 Ultratech, Inc. Methods of forming a denuded zone in a semiconductor wafer using rapid laser annealing
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
WO2011066548A1 (en) * 2009-11-30 2011-06-03 Uvt Tech Systems, Inc. Laser doping
US8021950B1 (en) 2010-10-26 2011-09-20 International Business Machines Corporation Semiconductor wafer processing method that allows device regions to be selectively annealed following back end of the line (BEOL) metal wiring layer formation
US9302348B2 (en) 2011-06-07 2016-04-05 Ultratech Inc. Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication
US10439720B2 (en) 2017-05-19 2019-10-08 Adolite Inc. FPC-based optical interconnect module on glass interposer
JP7542350B2 (ja) * 2020-07-21 2024-08-30 Ｊｓｗアクティナシステム株式会社 レーザアニール装置、レーザアニール方法、及び半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669837A (en) * 1979-11-12 1981-06-11 Fujitsu Ltd Manufacture of semiconductor device
US4371421A (en) * 1981-04-16 1983-02-01 Massachusetts Institute Of Technology Lateral epitaxial growth by seeded solidification
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
JPS59115574A (ja) * 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
EP0178447B1 (en) * 1984-10-09 1993-02-17 Fujitsu Limited A manufacturing method of an integrated circuit based on semiconductor-on-insulator technology
US4659392A (en) * 1985-03-21 1987-04-21 Hughes Aircraft Company Selective area double epitaxial process for fabricating silicon-on-insulator structures for use with MOS devices and integrated circuits
JPH0793258B2 (ja) * 1985-12-04 1995-10-09 富士通株式会社 導電体膜の再結晶化方法
US4753895A (en) * 1987-02-24 1988-06-28 Hughes Aircraft Company Method of forming low leakage CMOS device on insulating substrate
US5087576A (en) * 1987-10-26 1992-02-11 North Carolina State University Implantation and electrical activation of dopants into monocrystalline silicon carbide
US5318915A (en) * 1993-01-25 1994-06-07 North Carolina State University At Raleigh Method for forming a p-n junction in silicon carbide
US5908307A (en) * 1997-01-31 1999-06-01 Ultratech Stepper, Inc. Fabrication method for reduced-dimension FET devices
US5918915A (en) * 1997-11-03 1999-07-06 Calteux; Kenneth J. Sliding door lock

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JP4295922B2 (ja) 2009-07-15
EP1121713A1 (en) 2001-08-08
DE69837054D1 (de) 2007-03-22
EP1121713B1 (en) 2007-02-07
WO2000013213A1 (en) 2000-03-09
TW409293B (en) 2000-10-21
US5956603A (en) 1999-09-21
DE69837054T2 (de) 2007-06-06
JP2002524846A (ja) 2002-08-06
EP1121713A4 (en) 2003-07-16
KR20010074629A (ko) 2001-08-04

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