KR100573887B1 - 포지티브 레지스트 조성물 - Google Patents

포지티브 레지스트 조성물 Download PDF

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Publication number
KR100573887B1
KR100573887B1 KR1019990040590A KR19990040590A KR100573887B1 KR 100573887 B1 KR100573887 B1 KR 100573887B1 KR 1019990040590 A KR1019990040590 A KR 1019990040590A KR 19990040590 A KR19990040590 A KR 19990040590A KR 100573887 B1 KR100573887 B1 KR 100573887B1
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KR
South Korea
Prior art keywords
group
hydrogen atom
resin
acid
resist composition
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Expired - Fee Related
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KR1019990040590A
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English (en)
Korean (ko)
Other versions
KR20000023329A (ko
Inventor
아오아이토시아키
사토켄이치로오
Original Assignee
후지 샤신 필름 가부시기가이샤
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Publication of KR20000023329A publication Critical patent/KR20000023329A/ko
Application granted granted Critical
Publication of KR100573887B1 publication Critical patent/KR100573887B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1019990040590A 1998-09-24 1999-09-21 포지티브 레지스트 조성물 Expired - Fee Related KR100573887B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27004198A JP3856270B2 (ja) 1998-09-24 1998-09-24 ポジ型レジスト組成物
JP98-270041 1998-09-24

Publications (2)

Publication Number Publication Date
KR20000023329A KR20000023329A (ko) 2000-04-25
KR100573887B1 true KR100573887B1 (ko) 2006-04-26

Family

ID=17480717

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990040590A Expired - Fee Related KR100573887B1 (ko) 1998-09-24 1999-09-21 포지티브 레지스트 조성물

Country Status (3)

Country Link
US (1) US6632586B1 (enExample)
JP (1) JP3856270B2 (enExample)
KR (1) KR100573887B1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692888B1 (en) * 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
JP4568278B2 (ja) * 2004-03-08 2010-10-27 三菱レイヨン株式会社 レジスト材料、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物
EP1736485B1 (en) * 2004-04-13 2013-07-31 Tokyo Ohka Kogyo Co., Ltd. Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
US7494759B2 (en) * 2004-05-31 2009-02-24 Tokyo Ohka Kogyo Co., Ltd. Positive resist compositions and process for the formation of resist patterns with the same
JP4524154B2 (ja) * 2004-08-18 2010-08-11 富士フイルム株式会社 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
KR101156975B1 (ko) * 2005-06-24 2012-06-20 주식회사 동진쎄미켐 포토레지스트용 폴리머 및 이를 포함하는 포토레지스트 조성물
KR101190527B1 (ko) 2005-08-12 2012-10-16 주식회사 동진쎄미켐 포토레지스트용 폴리머 및 이를 포함하는 포토레지스트조성물
TW200702924A (en) * 2005-06-24 2007-01-16 Dongjin Semichem Co Ltd Photoresist monomer, polymer thereof and photoresist composition including the same
WO2009093419A1 (ja) * 2008-01-21 2009-07-30 Daicel Chemical Industries, Ltd. 化学増幅型フォトレジスト用樹脂及びその製造方法
WO2012014435A1 (ja) 2010-07-30 2012-02-02 三菱瓦斯化学株式会社 化合物、感放射線性組成物及びレジストパターン形成方法
WO2012046880A1 (ja) * 2010-10-08 2012-04-12 日本カーバイド工業株式会社 新規なジビニルエーテル化合物及びその製造方法
JP5986826B2 (ja) * 2012-06-29 2016-09-06 株式会社ダイセル 高分子化合物、フォトレジスト用樹脂組成物、及び半導体の製造方法
KR102076529B1 (ko) 2012-06-29 2020-02-13 주식회사 다이셀 고분자 화합물, 포토레지스트용 수지 조성물, 및 반도체의 제조 방법
JP5986825B2 (ja) * 2012-06-29 2016-09-06 株式会社ダイセル 高分子化合物、フォトレジスト用樹脂組成物、及び半導体の製造方法
US20170059989A1 (en) 2015-08-24 2017-03-02 A School Corporation Kansai University Polymer compound, radiation sensitive composition and pattern forming method
US20170058079A1 (en) 2015-08-24 2017-03-02 A School Corporation Kansai University Polymer compound, radiation sensitive composition and pattern forming method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0915846A (ja) * 1995-06-30 1997-01-17 Nec Corp フォトレジスト組成物
KR970071630A (ko) * 1996-04-24 1997-11-07 카나가와 치히로 가교기를 갖는 고분자 화합물의 제조 방법
JPH10115925A (ja) * 1996-08-20 1998-05-06 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2715881B2 (ja) * 1993-12-28 1998-02-18 日本電気株式会社 感光性樹脂組成物およびパターン形成方法
US5942367A (en) * 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0915846A (ja) * 1995-06-30 1997-01-17 Nec Corp フォトレジスト組成物
KR970071630A (ko) * 1996-04-24 1997-11-07 카나가와 치히로 가교기를 갖는 고분자 화합물의 제조 방법
JPH10115925A (ja) * 1996-08-20 1998-05-06 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物

Also Published As

Publication number Publication date
JP2000098613A (ja) 2000-04-07
US6632586B1 (en) 2003-10-14
JP3856270B2 (ja) 2006-12-13
KR20000023329A (ko) 2000-04-25

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