KR100529664B1 - 반도체 제조 장치와 반도체 장치의 제조 방법 - Google Patents

반도체 제조 장치와 반도체 장치의 제조 방법 Download PDF

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Publication number
KR100529664B1
KR100529664B1 KR10-2003-7008800A KR20037008800A KR100529664B1 KR 100529664 B1 KR100529664 B1 KR 100529664B1 KR 20037008800 A KR20037008800 A KR 20037008800A KR 100529664 B1 KR100529664 B1 KR 100529664B1
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South Korea
Prior art keywords
main body
processing apparatus
apparatus main
processing
controller unit
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KR10-2003-7008800A
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English (en)
Korean (ko)
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KR20040019270A (ko
Inventor
가즈오 사끼
유끼히로 우시꾸
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가부시끼가이샤 도시바
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Classifications

    • H10P95/00—
    • H10P72/0612—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR10-2003-7008800A 2001-10-11 2002-10-08 반도체 제조 장치와 반도체 장치의 제조 방법 Expired - Fee Related KR100529664B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00313918 2001-10-11
JP2001313918A JP4068327B2 (ja) 2001-10-11 2001-10-11 半導体製造装置と半導体装置の製造方法
PCT/JP2002/010436 WO2003034474A1 (fr) 2001-10-11 2002-10-08 Appareil de fabrication d'un semi-conducteur et procede de fabrication d'un dispositif semi-conducteur

Publications (2)

Publication Number Publication Date
KR20040019270A KR20040019270A (ko) 2004-03-05
KR100529664B1 true KR100529664B1 (ko) 2005-11-21

Family

ID=19132313

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7008800A Expired - Fee Related KR100529664B1 (ko) 2001-10-11 2002-10-08 반도체 제조 장치와 반도체 장치의 제조 방법

Country Status (7)

Country Link
US (2) US7082346B2 (OSRAM)
EP (1) EP1437763A4 (OSRAM)
JP (1) JP4068327B2 (OSRAM)
KR (1) KR100529664B1 (OSRAM)
CN (1) CN1271679C (OSRAM)
TW (1) TW574725B (OSRAM)
WO (1) WO2003034474A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220141133A (ko) 2021-04-12 2022-10-19 주식회사 번영중공업 풍력발전기 날개의 저항 시험용 알루미늄 선박

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JP4008899B2 (ja) * 2003-09-08 2007-11-14 株式会社東芝 半導体装置の製造システムおよび半導体装置の製造方法
JP4880889B2 (ja) * 2003-09-09 2012-02-22 セイコーインスツル株式会社 半導体装置の製造方法
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
JP5165907B2 (ja) * 2007-03-06 2013-03-21 株式会社東芝 成膜形状シミュレーション方法及び電子デバイスの製造方法
US20130137199A1 (en) * 2011-11-16 2013-05-30 Skyworks Solutions, Inc. Systems and methods for monitoring heterojunction bipolar transistor processes
US9847407B2 (en) 2011-11-16 2017-12-19 Skyworks Solutions, Inc. Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
US9105578B2 (en) * 2013-03-12 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
US9263275B2 (en) 2013-03-12 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
JP6739386B2 (ja) * 2017-03-28 2020-08-12 東京エレクトロン株式会社 基板処理システム、制御装置、成膜方法及びプログラム
KR101920870B1 (ko) * 2017-09-15 2018-11-21 한국과학기술연구원 박막의 전기광학적 특성 비접촉식 측정 시스템 및 방법
US11894220B2 (en) 2019-07-17 2024-02-06 Applied Materials, Inc. Method and apparatus for controlling a processing reactor
JP7271403B2 (ja) * 2019-11-26 2023-05-11 エア・ウォーター株式会社 成膜装置および成膜装置の使用方法

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JPS58182217A (ja) * 1982-04-19 1983-10-25 Oki Electric Ind Co Ltd 薄膜形成方法
JP2634595B2 (ja) * 1987-06-22 1997-07-30 株式会社日立製作所 半導体製造装置
US4900591A (en) * 1988-01-20 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Method for the deposition of high quality silicon dioxide at low temperature
US5146869A (en) * 1990-06-11 1992-09-15 National Semiconductor Corporation Tube and injector for preheating gases in a chemical vapor deposition reactor
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5062446A (en) * 1991-01-07 1991-11-05 Sematech, Inc. Intelligent mass flow controller
JPH0855145A (ja) 1994-08-08 1996-02-27 Fujitsu Ltd 半導体プロセスシミュレーション方法及びそのための装置
JPH08172084A (ja) * 1994-12-19 1996-07-02 Kokusai Electric Co Ltd 半導体成膜方法及びその装置
JPH0917705A (ja) * 1995-06-28 1997-01-17 Tokyo Electron Ltd 連続熱処理方法
KR0165470B1 (ko) * 1995-11-08 1999-02-01 김광호 반도체 소자의 박막형성 프로그램의 자동보정 시스템
JP3768575B2 (ja) * 1995-11-28 2006-04-19 アプライド マテリアルズ インコーポレイテッド Ｃｖｄ装置及びチャンバ内のクリーニングの方法
US5994209A (en) * 1996-11-13 1999-11-30 Applied Materials, Inc. Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
US6240330B1 (en) 1997-05-28 2001-05-29 International Business Machines Corporation Method for feedforward corrections for off-specification conditions
US6161054A (en) * 1997-09-22 2000-12-12 On-Line Technologies, Inc. Cell control method and apparatus
JPH11288856A (ja) 1998-04-06 1999-10-19 Sony Corp 半導体シミュレーション方法
US6137112A (en) * 1998-09-10 2000-10-24 Eaton Corporation Time of flight energy measurement apparatus for an ion beam implanter
US6318384B1 (en) * 1999-09-24 2001-11-20 Applied Materials, Inc. Self cleaning method of forming deep trenches in silicon substrates
JP2002057149A (ja) * 2000-08-08 2002-02-22 Tokyo Electron Ltd 処理装置及びそのクリーニング方法
US6913938B2 (en) * 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US6772034B1 (en) * 2001-07-12 2004-08-03 Advanced Micro Devices, Inc. System and software for data distribution in semiconductor manufacturing and method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220141133A (ko) 2021-04-12 2022-10-19 주식회사 번영중공업 풍력발전기 날개의 저항 시험용 알루미늄 선박

Also Published As

Publication number Publication date
US20060217830A1 (en) 2006-09-28
CN1537322A (zh) 2004-10-13
WO2003034474A1 (fr) 2003-04-24
TW574725B (en) 2004-02-01
EP1437763A1 (en) 2004-07-14
US7082346B2 (en) 2006-07-25
JP2003124084A (ja) 2003-04-25
EP1437763A4 (en) 2009-01-28
CN1271679C (zh) 2006-08-23
JP4068327B2 (ja) 2008-03-26
US20040044419A1 (en) 2004-03-04
KR20040019270A (ko) 2004-03-05

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