JP4068327B2 - 半導体製造装置と半導体装置の製造方法 - Google Patents

半導体製造装置と半導体装置の製造方法 Download PDF

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Publication number
JP4068327B2
JP4068327B2 JP2001313918A JP2001313918A JP4068327B2 JP 4068327 B2 JP4068327 B2 JP 4068327B2 JP 2001313918 A JP2001313918 A JP 2001313918A JP 2001313918 A JP2001313918 A JP 2001313918A JP 4068327 B2 JP4068327 B2 JP 4068327B2
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Japan
Prior art keywords
processing
controller unit
main body
calculation
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2001313918A
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English (en)
Japanese (ja)
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JP2003124084A (ja
JP2003124084A5 (OSRAM
Inventor
和朗 佐喜
幸広 牛久
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Toshiba Corp
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Toshiba Corp
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Publication date
Priority to JP2001313918A priority Critical patent/JP4068327B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to PCT/JP2002/010436 priority patent/WO2003034474A1/ja
Priority to EP02779906A priority patent/EP1437763A4/en
Priority to CNB028033841A priority patent/CN1271679C/zh
Priority to KR10-2003-7008800A priority patent/KR100529664B1/ko
Priority to TW91123440A priority patent/TW574725B/zh
Publication of JP2003124084A publication Critical patent/JP2003124084A/ja
Priority to US10/457,353 priority patent/US7082346B2/en
Publication of JP2003124084A5 publication Critical patent/JP2003124084A5/ja
Priority to US11/444,454 priority patent/US20060217830A1/en
Application granted granted Critical
Publication of JP4068327B2 publication Critical patent/JP4068327B2/ja
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    • H10P95/00—
    • H10P72/0612—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2001313918A 2001-10-11 2001-10-11 半導体製造装置と半導体装置の製造方法 Expired - Fee Related JP4068327B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2001313918A JP4068327B2 (ja) 2001-10-11 2001-10-11 半導体製造装置と半導体装置の製造方法
EP02779906A EP1437763A4 (en) 2001-10-11 2002-10-08 SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
CNB028033841A CN1271679C (zh) 2001-10-11 2002-10-08 半导体制造装置以及半导体器件制造方法
KR10-2003-7008800A KR100529664B1 (ko) 2001-10-11 2002-10-08 반도체 제조 장치와 반도체 장치의 제조 방법
PCT/JP2002/010436 WO2003034474A1 (fr) 2001-10-11 2002-10-08 Appareil de fabrication d'un semi-conducteur et procede de fabrication d'un dispositif semi-conducteur
TW91123440A TW574725B (en) 2001-10-11 2002-10-11 Semiconductor manufacturing device and method for manufacturing a semiconductor
US10/457,353 US7082346B2 (en) 2001-10-11 2003-06-10 Semiconductor manufacturing apparatus and semiconductor device manufacturing method
US11/444,454 US20060217830A1 (en) 2001-10-11 2006-06-01 Semiconductor manufacturing apparatus and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001313918A JP4068327B2 (ja) 2001-10-11 2001-10-11 半導体製造装置と半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003124084A JP2003124084A (ja) 2003-04-25
JP2003124084A5 JP2003124084A5 (OSRAM) 2004-12-16
JP4068327B2 true JP4068327B2 (ja) 2008-03-26

Family

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Family Applications (1)

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JP2001313918A Expired - Fee Related JP4068327B2 (ja) 2001-10-11 2001-10-11 半導体製造装置と半導体装置の製造方法

Country Status (7)

Country Link
US (2) US7082346B2 (OSRAM)
EP (1) EP1437763A4 (OSRAM)
JP (1) JP4068327B2 (OSRAM)
KR (1) KR100529664B1 (OSRAM)
CN (1) CN1271679C (OSRAM)
TW (1) TW574725B (OSRAM)
WO (1) WO2003034474A1 (OSRAM)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4008899B2 (ja) * 2003-09-08 2007-11-14 株式会社東芝 半導体装置の製造システムおよび半導体装置の製造方法
JP4880889B2 (ja) * 2003-09-09 2012-02-22 セイコーインスツル株式会社 半導体装置の製造方法
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
JP5165907B2 (ja) * 2007-03-06 2013-03-21 株式会社東芝 成膜形状シミュレーション方法及び電子デバイスの製造方法
US20130137199A1 (en) * 2011-11-16 2013-05-30 Skyworks Solutions, Inc. Systems and methods for monitoring heterojunction bipolar transistor processes
US9847407B2 (en) 2011-11-16 2017-12-19 Skyworks Solutions, Inc. Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
US9105578B2 (en) * 2013-03-12 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
US9263275B2 (en) 2013-03-12 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
JP6739386B2 (ja) * 2017-03-28 2020-08-12 東京エレクトロン株式会社 基板処理システム、制御装置、成膜方法及びプログラム
KR101920870B1 (ko) * 2017-09-15 2018-11-21 한국과학기술연구원 박막의 전기광학적 특성 비접촉식 측정 시스템 및 방법
US11894220B2 (en) 2019-07-17 2024-02-06 Applied Materials, Inc. Method and apparatus for controlling a processing reactor
JP7271403B2 (ja) * 2019-11-26 2023-05-11 エア・ウォーター株式会社 成膜装置および成膜装置の使用方法
KR20220141133A (ko) 2021-04-12 2022-10-19 주식회사 번영중공업 풍력발전기 날개의 저항 시험용 알루미늄 선박

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JPS58182217A (ja) * 1982-04-19 1983-10-25 Oki Electric Ind Co Ltd 薄膜形成方法
JP2634595B2 (ja) * 1987-06-22 1997-07-30 株式会社日立製作所 半導体製造装置
US4900591A (en) * 1988-01-20 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Method for the deposition of high quality silicon dioxide at low temperature
US5146869A (en) * 1990-06-11 1992-09-15 National Semiconductor Corporation Tube and injector for preheating gases in a chemical vapor deposition reactor
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5062446A (en) * 1991-01-07 1991-11-05 Sematech, Inc. Intelligent mass flow controller
JPH0855145A (ja) 1994-08-08 1996-02-27 Fujitsu Ltd 半導体プロセスシミュレーション方法及びそのための装置
JPH08172084A (ja) * 1994-12-19 1996-07-02 Kokusai Electric Co Ltd 半導体成膜方法及びその装置
JPH0917705A (ja) * 1995-06-28 1997-01-17 Tokyo Electron Ltd 連続熱処理方法
KR0165470B1 (ko) * 1995-11-08 1999-02-01 김광호 반도체 소자의 박막형성 프로그램의 자동보정 시스템
JP3768575B2 (ja) * 1995-11-28 2006-04-19 アプライド マテリアルズ インコーポレイテッド Ｃｖｄ装置及びチャンバ内のクリーニングの方法
US5994209A (en) * 1996-11-13 1999-11-30 Applied Materials, Inc. Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
US6240330B1 (en) 1997-05-28 2001-05-29 International Business Machines Corporation Method for feedforward corrections for off-specification conditions
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Also Published As

Publication number Publication date
US20060217830A1 (en) 2006-09-28
CN1537322A (zh) 2004-10-13
KR100529664B1 (ko) 2005-11-21
WO2003034474A1 (fr) 2003-04-24
TW574725B (en) 2004-02-01
EP1437763A1 (en) 2004-07-14
US7082346B2 (en) 2006-07-25
JP2003124084A (ja) 2003-04-25
EP1437763A4 (en) 2009-01-28
CN1271679C (zh) 2006-08-23
US20040044419A1 (en) 2004-03-04
KR20040019270A (ko) 2004-03-05

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