KR100524831B1 - 처리장치 및 그 온도제어방법 - Google Patents

처리장치 및 그 온도제어방법 Download PDF

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Publication number
KR100524831B1
KR100524831B1 KR10-2002-7001042A KR20027001042A KR100524831B1 KR 100524831 B1 KR100524831 B1 KR 100524831B1 KR 20027001042 A KR20027001042 A KR 20027001042A KR 100524831 B1 KR100524831 B1 KR 100524831B1
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KR
South Korea
Prior art keywords
temperature
refrigerant
circulation path
target
processing
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR10-2002-7001042A
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English (en)
Korean (ko)
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KR20020027505A (ko
Inventor
히루카다카아키
후루야마사오
Original Assignee
동경 엘렉트론 주식회사
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Publication of KR20020027505A publication Critical patent/KR20020027505A/ko
Application granted granted Critical
Publication of KR100524831B1 publication Critical patent/KR100524831B1/ko
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Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Temperature (AREA)
KR10-2002-7001042A 1999-07-27 2000-07-26 처리장치 및 그 온도제어방법 Expired - Lifetime KR100524831B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-1999-00212048 1999-07-27
JP21204899A JP4256031B2 (ja) 1999-07-27 1999-07-27 処理装置およびその温度制御方法

Publications (2)

Publication Number Publication Date
KR20020027505A KR20020027505A (ko) 2002-04-13
KR100524831B1 true KR100524831B1 (ko) 2005-10-28

Family

ID=16616014

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-7001042A Expired - Lifetime KR100524831B1 (ko) 1999-07-27 2000-07-26 처리장치 및 그 온도제어방법

Country Status (4)

Country Link
US (1) US6629423B1 (enExample)
JP (1) JP4256031B2 (enExample)
KR (1) KR100524831B1 (enExample)
WO (1) WO2001008206A1 (enExample)

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JP2003314910A (ja) * 2002-04-24 2003-11-06 Matsushita Electric Ind Co Ltd 半導体素子冷却装置およびその制御方法
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JP4295490B2 (ja) * 2002-11-15 2009-07-15 東京エレクトロン株式会社 処理装置並びに処理装置用のチラー制御方法及びチラー制御装置
US6825617B2 (en) 2003-02-27 2004-11-30 Hitachi High-Technologies Corporation Semiconductor processing apparatus
JPWO2004079805A1 (ja) * 2003-03-07 2006-06-08 東京エレクトロン株式会社 基板処理装置及び温度調節装置
TWI296323B (en) * 2003-12-25 2008-05-01 Ind Tech Res Inst Constant temperature refrigeration system for extensive temperature range application and control method thereof
US7080521B2 (en) * 2004-08-31 2006-07-25 Thermo King Corporation Mobile refrigeration system and control
JP2006200814A (ja) * 2005-01-20 2006-08-03 Daikin Ind Ltd 冷凍装置
JP2006284001A (ja) * 2005-03-31 2006-10-19 Sumitomo Heavy Ind Ltd 温度制御装置
JP2006351887A (ja) * 2005-06-17 2006-12-28 Hitachi High-Technologies Corp プラズマ処理装置
US20070067643A1 (en) * 2005-09-21 2007-03-22 Widevine Technologies, Inc. System and method for software tamper detection
JP4910163B2 (ja) * 2005-09-30 2012-04-04 Ｓｍｃ株式会社 恒温液循環装置及び該装置における温度制御方法
JP4625394B2 (ja) * 2005-10-04 2011-02-02 三菱重工業株式会社 製膜装置、製膜方法
US8422193B2 (en) * 2006-12-19 2013-04-16 Axcelis Technologies, Inc. Annulus clamping and backside gas cooled electrostatic chuck
JP2009111301A (ja) * 2007-11-01 2009-05-21 Hitachi High-Technologies Corp プラズマ処理装置
US9558980B2 (en) * 2008-04-30 2017-01-31 Axcelis Technologies, Inc. Vapor compression refrigeration chuck for ion implanters
US9036326B2 (en) * 2008-04-30 2015-05-19 Axcelis Technologies, Inc. Gas bearing electrostatic chuck
JP5651317B2 (ja) 2009-03-31 2015-01-07 東京エレクトロン株式会社 半導体製造装置及び温調方法
JP2011052913A (ja) * 2009-09-02 2011-03-17 Nishiyama Corp ポンプ循環量制御温度調節装置
JP2013532354A (ja) 2010-05-28 2013-08-15 アクセリス テクノロジーズ， インコーポレイテッド 冷却されるイオン注入システムのための加熱回転式のシールおよび軸受け
JP5485022B2 (ja) * 2010-05-31 2014-05-07 株式会社ニシヤマ 低温蓄熱冷却装置
US8481969B2 (en) 2010-06-04 2013-07-09 Axcelis Technologies, Inc. Effective algorithm for warming a twist axis for cold ion implantations
US9519297B1 (en) * 2010-08-17 2016-12-13 Vytautas K. Virskus Dynamic differential energy control of hydronic heating or cooling systems
JP2012169552A (ja) * 2011-02-16 2012-09-06 Tokyo Electron Ltd 冷却機構、処理室、処理室内部品及び冷却方法
US9711324B2 (en) 2012-05-31 2017-07-18 Axcelis Technologies, Inc. Inert atmospheric pressure pre-chill and post-heat
JP6014513B2 (ja) * 2012-08-29 2016-10-25 東京エレクトロン株式会社 プラズマエッチング装置及び制御方法
CN105374657B (zh) * 2014-07-18 2017-07-25 中微半导体设备(上海)有限公司 等离子体处理装置及其温度控制方法
JP6525751B2 (ja) * 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP5841281B1 (ja) * 2015-06-15 2016-01-13 伸和コントロールズ株式会社 プラズマ処理装置用チラー装置
US10867812B2 (en) 2017-08-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing system and control method
JP7437898B2 (ja) 2019-09-18 2024-02-26 東京エレクトロン株式会社 検査システム及び検査方法
CN113972148B (zh) * 2020-07-23 2025-04-18 北京海盛日新科技有限公司 一种冷却系统及其控制方法
CN119744571A (zh) 2022-09-01 2025-04-01 东京毅力科创株式会社 温度调节系统和等离子体处理系统

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Also Published As

Publication number Publication date
KR20020027505A (ko) 2002-04-13
JP2001044176A (ja) 2001-02-16
JP4256031B2 (ja) 2009-04-22
WO2001008206A1 (fr) 2001-02-01
US6629423B1 (en) 2003-10-07

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