JP4256031B2 - 処理装置およびその温度制御方法 - Google Patents

処理装置およびその温度制御方法 Download PDF

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Publication number
JP4256031B2
JP4256031B2 JP21204899A JP21204899A JP4256031B2 JP 4256031 B2 JP4256031 B2 JP 4256031B2 JP 21204899 A JP21204899 A JP 21204899A JP 21204899 A JP21204899 A JP 21204899A JP 4256031 B2 JP4256031 B2 JP 4256031B2
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Japan
Prior art keywords
temperature
refrigerant
difference value
processed
control
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP21204899A
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English (en)
Japanese (ja)
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JP2001044176A (ja
JP2001044176A5 (enExample
Inventor
隆明 廣岡
正男 古屋
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP21204899A priority Critical patent/JP4256031B2/ja
Priority to PCT/JP2000/004986 priority patent/WO2001008206A1/ja
Priority to KR10-2002-7001042A priority patent/KR100524831B1/ko
Priority to US10/048,068 priority patent/US6629423B1/en
Publication of JP2001044176A publication Critical patent/JP2001044176A/ja
Publication of JP2001044176A5 publication Critical patent/JP2001044176A5/ja
Application granted granted Critical
Publication of JP4256031B2 publication Critical patent/JP4256031B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Control Of Temperature (AREA)
JP21204899A 1999-07-27 1999-07-27 処理装置およびその温度制御方法 Expired - Lifetime JP4256031B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP21204899A JP4256031B2 (ja) 1999-07-27 1999-07-27 処理装置およびその温度制御方法
PCT/JP2000/004986 WO2001008206A1 (fr) 1999-07-27 2000-07-26 Processeur et procede de regulation de la temperature de celui-ci
KR10-2002-7001042A KR100524831B1 (ko) 1999-07-27 2000-07-26 처리장치 및 그 온도제어방법
US10/048,068 US6629423B1 (en) 1999-07-27 2000-07-26 Processor and temperature control method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21204899A JP4256031B2 (ja) 1999-07-27 1999-07-27 処理装置およびその温度制御方法

Publications (3)

Publication Number Publication Date
JP2001044176A JP2001044176A (ja) 2001-02-16
JP2001044176A5 JP2001044176A5 (enExample) 2005-09-29
JP4256031B2 true JP4256031B2 (ja) 2009-04-22

Family

ID=16616014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21204899A Expired - Lifetime JP4256031B2 (ja) 1999-07-27 1999-07-27 処理装置およびその温度制御方法

Country Status (4)

Country Link
US (1) US6629423B1 (enExample)
JP (1) JP4256031B2 (enExample)
KR (1) KR100524831B1 (enExample)
WO (1) WO2001008206A1 (enExample)

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JP2003314910A (ja) * 2002-04-24 2003-11-06 Matsushita Electric Ind Co Ltd 半導体素子冷却装置およびその制御方法
US6986261B2 (en) 2002-11-15 2006-01-17 Tokyo Electron Limited Method and system for controlling chiller and semiconductor processing system
JP4295490B2 (ja) * 2002-11-15 2009-07-15 東京エレクトロン株式会社 処理装置並びに処理装置用のチラー制御方法及びチラー制御装置
US6825617B2 (en) 2003-02-27 2004-11-30 Hitachi High-Technologies Corporation Semiconductor processing apparatus
JPWO2004079805A1 (ja) * 2003-03-07 2006-06-08 東京エレクトロン株式会社 基板処理装置及び温度調節装置
TWI296323B (en) * 2003-12-25 2008-05-01 Ind Tech Res Inst Constant temperature refrigeration system for extensive temperature range application and control method thereof
US7080521B2 (en) * 2004-08-31 2006-07-25 Thermo King Corporation Mobile refrigeration system and control
JP2006200814A (ja) * 2005-01-20 2006-08-03 Daikin Ind Ltd 冷凍装置
JP2006284001A (ja) * 2005-03-31 2006-10-19 Sumitomo Heavy Ind Ltd 温度制御装置
JP2006351887A (ja) * 2005-06-17 2006-12-28 Hitachi High-Technologies Corp プラズマ処理装置
US20070067643A1 (en) * 2005-09-21 2007-03-22 Widevine Technologies, Inc. System and method for software tamper detection
JP4910163B2 (ja) * 2005-09-30 2012-04-04 Ｓｍｃ株式会社 恒温液循環装置及び該装置における温度制御方法
JP4625394B2 (ja) * 2005-10-04 2011-02-02 三菱重工業株式会社 製膜装置、製膜方法
US8422193B2 (en) * 2006-12-19 2013-04-16 Axcelis Technologies, Inc. Annulus clamping and backside gas cooled electrostatic chuck
JP2009111301A (ja) * 2007-11-01 2009-05-21 Hitachi High-Technologies Corp プラズマ処理装置
US9558980B2 (en) * 2008-04-30 2017-01-31 Axcelis Technologies, Inc. Vapor compression refrigeration chuck for ion implanters
US9036326B2 (en) * 2008-04-30 2015-05-19 Axcelis Technologies, Inc. Gas bearing electrostatic chuck
JP5651317B2 (ja) 2009-03-31 2015-01-07 東京エレクトロン株式会社 半導体製造装置及び温調方法
JP2011052913A (ja) * 2009-09-02 2011-03-17 Nishiyama Corp ポンプ循環量制御温度調節装置
JP2013532354A (ja) 2010-05-28 2013-08-15 アクセリス テクノロジーズ， インコーポレイテッド 冷却されるイオン注入システムのための加熱回転式のシールおよび軸受け
JP5485022B2 (ja) * 2010-05-31 2014-05-07 株式会社ニシヤマ 低温蓄熱冷却装置
US8481969B2 (en) 2010-06-04 2013-07-09 Axcelis Technologies, Inc. Effective algorithm for warming a twist axis for cold ion implantations
US9519297B1 (en) * 2010-08-17 2016-12-13 Vytautas K. Virskus Dynamic differential energy control of hydronic heating or cooling systems
JP2012169552A (ja) * 2011-02-16 2012-09-06 Tokyo Electron Ltd 冷却機構、処理室、処理室内部品及び冷却方法
US9711324B2 (en) 2012-05-31 2017-07-18 Axcelis Technologies, Inc. Inert atmospheric pressure pre-chill and post-heat
JP6014513B2 (ja) * 2012-08-29 2016-10-25 東京エレクトロン株式会社 プラズマエッチング装置及び制御方法
CN105374657B (zh) * 2014-07-18 2017-07-25 中微半导体设备(上海)有限公司 等离子体处理装置及其温度控制方法
JP6525751B2 (ja) * 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP5841281B1 (ja) * 2015-06-15 2016-01-13 伸和コントロールズ株式会社 プラズマ処理装置用チラー装置
US10867812B2 (en) 2017-08-30 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing system and control method
JP7437898B2 (ja) 2019-09-18 2024-02-26 東京エレクトロン株式会社 検査システム及び検査方法
CN113972148B (zh) * 2020-07-23 2025-04-18 北京海盛日新科技有限公司 一种冷却系统及其控制方法
CN119744571A (zh) 2022-09-01 2025-04-01 东京毅力科创株式会社 温度调节系统和等离子体处理系统

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Also Published As

Publication number Publication date
KR20020027505A (ko) 2002-04-13
JP2001044176A (ja) 2001-02-16
KR100524831B1 (ko) 2005-10-28
WO2001008206A1 (fr) 2001-02-01
US6629423B1 (en) 2003-10-07

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