KR100522275B1 - ＳｉＧｅ/ＳＯＩ ＣＭＯＳ 및 그 제조 방법 - Google Patents
ＳｉＧｅ/ＳＯＩ ＣＭＯＳ 및 그 제조 방법 Download PDFInfo
- Publication number
- KR100522275B1 KR100522275B1 KR10-2002-0066211A KR20020066211A KR100522275B1 KR 100522275 B1 KR100522275 B1 KR 100522275B1 KR 20020066211 A KR20020066211 A KR 20020066211A KR 100522275 B1 KR100522275 B1 KR 100522275B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- sige
- silicon germanium
- germanium layer
- silicon
- Prior art date
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 66
- 238000000137 annealing Methods 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims description 39
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005224 laser annealing Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 22
- 239000013078 crystal Substances 0.000 abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 24
- 229920005591 polysilicon Polymers 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/016,373 US20020168802A1 (en) | 2001-05-14 | 2001-10-30 | SiGe/SOI CMOS and method of making the same |
| US10/016,373 | 2001-10-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20030036006A KR20030036006A (ko) | 2003-05-09 |
| KR100522275B1 true KR100522275B1 (ko) | 2005-10-18 |
Family
ID=21776792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2002-0066211A KR100522275B1 (ko) | 2001-10-30 | 2002-10-29 | ＳｉＧｅ/ＳＯＩ ＣＭＯＳ 및 그 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2003158250A (zh) |
| KR (1) | KR100522275B1 (zh) |
| CN (1) | CN1237587C (zh) |
| TW (1) | TWI298911B (zh) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6911379B2 (en) * | 2003-03-05 | 2005-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming strained silicon on insulator substrate |
| US7169226B2 (en) * | 2003-07-01 | 2007-01-30 | International Business Machines Corporation | Defect reduction by oxidation of silicon |
| WO2005013375A1 (ja) | 2003-08-05 | 2005-02-10 | Fujitsu Limited | 半導体装置及びその製造方法 |
| US6989058B2 (en) * | 2003-09-03 | 2006-01-24 | International Business Machines Corporation | Use of thin SOI to inhibit relaxation of SiGe layers |
| US6972247B2 (en) * | 2003-12-05 | 2005-12-06 | International Business Machines Corporation | Method of fabricating strained Si SOI wafers |
| JP2005197405A (ja) | 2004-01-06 | 2005-07-21 | Toshiba Corp | 半導体装置とその製造方法 |
| US7550370B2 (en) * | 2004-01-16 | 2009-06-23 | International Business Machines Corporation | Method of forming thin SGOI wafers with high relaxation and low stacking fault defect density |
| US7217949B2 (en) * | 2004-07-01 | 2007-05-15 | International Business Machines Corporation | Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) |
| CN100336171C (zh) * | 2004-09-24 | 2007-09-05 | 上海新傲科技有限公司 | 基于注氧隔离技术的绝缘体上锗硅材料及其制备方法 |
| EP1650794B1 (en) * | 2004-10-19 | 2008-01-16 | S.O.I. Tec Silicon on Insulator Technologies S.A. | A method for fabricating a wafer structure with a strained silicon layer and an intermediate product of this method |
| US7193279B2 (en) * | 2005-01-18 | 2007-03-20 | Intel Corporation | Non-planar MOS structure with a strained channel region |
| TW200733244A (en) * | 2005-10-06 | 2007-09-01 | Nxp Bv | Semiconductor device |
| KR100776173B1 (ko) * | 2006-08-23 | 2007-11-12 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
| KR100782497B1 (ko) * | 2006-11-20 | 2007-12-05 | 삼성전자주식회사 | 얇은 응력이완 버퍼패턴을 갖는 반도체소자의 제조방법 및관련된 소자 |
| KR100880106B1 (ko) * | 2006-12-29 | 2009-01-21 | 주식회사 실트론 | ＳｉＧｅ 희생층을 이용하여 표면 거칠기를 개선한 ＳＯＩ웨이퍼의 제조 방법 |
| JP5575447B2 (ja) * | 2008-10-02 | 2014-08-20 | 住友化学株式会社 | 半導体基板、電子デバイス、および半導体基板の製造方法 |
| TW201019376A (en) * | 2008-10-02 | 2010-05-16 | Sumitomo Chemical Co | Semiconductor wafer, electronic device and manufacturing method of semiconductor wafer |
| FR3051595B1 (fr) * | 2016-05-17 | 2022-11-18 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat de type semi-conducteur contraint sur isolant |
-
2002
- 2002-09-13 JP JP2002269227A patent/JP2003158250A/ja not_active Withdrawn
- 2002-10-21 TW TW091124221A patent/TWI298911B/zh not_active IP Right Cessation
- 2002-10-29 KR KR10-2002-0066211A patent/KR100522275B1/ko not_active IP Right Cessation
- 2002-10-30 CN CNB021481431A patent/CN1237587C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1237587C (zh) | 2006-01-18 |
| TWI298911B (en) | 2008-07-11 |
| JP2003158250A (ja) | 2003-05-30 |
| KR20030036006A (ko) | 2003-05-09 |
| CN1416159A (zh) | 2003-05-07 |
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| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20101007 Year of fee payment: 6 |
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| LAPS | Lapse due to unpaid annual fee |