KR100522130B1 - 웨이퍼 패시베이션 구조 및 제조방법 - Google Patents

웨이퍼 패시베이션 구조 및 제조방법 Download PDF

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KR100522130B1
KR100522130B1 KR10-2000-7007182A KR20007007182A KR100522130B1 KR 100522130 B1 KR100522130 B1 KR 100522130B1 KR 20007007182 A KR20007007182 A KR 20007007182A KR 100522130 B1 KR100522130 B1 KR 100522130B1
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South Korea
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dielectric layer
forming
layer
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dielectric
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KR10-2000-7007182A
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English (en)
Korean (ko)
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KR20010033662A (ko
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보어마크티
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인텔 코오퍼레이션
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Priority to KR10-2005-7010038A priority Critical patent/KR100526445B1/ko
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  • Wire Bonding (AREA)
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US20050158978A1 (en) 2005-07-21
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