KR100503553B1 - 반도체 물품을 전기연마 및/또는 전기도금하는 동안반도체 물품을 보유하고 위치시키는 장치 - Google Patents
반도체 물품을 전기연마 및/또는 전기도금하는 동안반도체 물품을 보유하고 위치시키는 장치 Download PDFInfo
- Publication number
- KR100503553B1 KR100503553B1 KR10-2004-7011238A KR20047011238A KR100503553B1 KR 100503553 B1 KR100503553 B1 KR 100503553B1 KR 20047011238 A KR20047011238 A KR 20047011238A KR 100503553 B1 KR100503553 B1 KR 100503553B1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer chuck
- assembly
- wafer
- upper section
- spring
- Prior art date
Links
- 238000009713 electroplating Methods 0.000 title abstract description 96
- 239000004065 semiconductor Substances 0.000 title description 30
- 238000000034 method Methods 0.000 claims description 73
- 238000010926 purge Methods 0.000 claims description 70
- 230000008569 process Effects 0.000 claims description 43
- 230000002829 reductive effect Effects 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 230000000717 retained effect Effects 0.000 claims description 3
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 229920003051 synthetic elastomer Polymers 0.000 claims 1
- 239000005061 synthetic rubber Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 540
- 238000012545 processing Methods 0.000 description 90
- 239000008151 electrolyte solution Substances 0.000 description 52
- 239000007789 gas Substances 0.000 description 42
- 238000004140 cleaning Methods 0.000 description 28
- 239000003792 electrolyte Substances 0.000 description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 229910001092 metal group alloy Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000005086 pumping Methods 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000002421 anti-septic effect Effects 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920002449 FKM Polymers 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000639 Spring steel Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000005137 deposition process Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 239000002783 friction material Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009428 plumbing Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11013698P | 1998-11-28 | 1998-11-28 | |
| US60/110,136 | 1998-11-28 | ||
| PCT/US1999/028106 WO2000033356A2 (en) | 1998-11-28 | 1999-11-24 | Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2001-7006569A Division KR100516776B1 (ko) | 1998-11-28 | 1999-11-24 | 반도체 물품을 전기연마 및/또는 전기도금하는 동안 반도체 물품을 보유하고 위치시키는 방법 및 장치 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057000594A Division KR100562011B1 (ko) | 1998-11-28 | 1999-11-24 | 전기도금 및/또는 전기연마 스테이션 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040070317A KR20040070317A (ko) | 2004-08-06 |
| KR100503553B1 true KR100503553B1 (ko) | 2005-07-26 |
Family
ID=22331393
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7011238A KR100503553B1 (ko) | 1998-11-28 | 1999-11-24 | 반도체 물품을 전기연마 및/또는 전기도금하는 동안반도체 물품을 보유하고 위치시키는 장치 |
| KR10-2001-7006569A KR100516776B1 (ko) | 1998-11-28 | 1999-11-24 | 반도체 물품을 전기연마 및/또는 전기도금하는 동안 반도체 물품을 보유하고 위치시키는 방법 및 장치 |
| KR1020057000594A KR100562011B1 (ko) | 1998-11-28 | 1999-11-24 | 전기도금 및/또는 전기연마 스테이션 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2001-7006569A KR100516776B1 (ko) | 1998-11-28 | 1999-11-24 | 반도체 물품을 전기연마 및/또는 전기도금하는 동안 반도체 물품을 보유하고 위치시키는 방법 및 장치 |
| KR1020057000594A KR100562011B1 (ko) | 1998-11-28 | 1999-11-24 | 전기도금 및/또는 전기연마 스테이션 |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP1133786A2 (zh) |
| JP (2) | JP2002531702A (zh) |
| KR (3) | KR100503553B1 (zh) |
| CN (2) | CN1191605C (zh) |
| AU (1) | AU3105400A (zh) |
| CA (1) | CA2352160A1 (zh) |
| IL (1) | IL143316A (zh) |
| TW (1) | TW430919B (zh) |
| WO (1) | WO2000033356A2 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170007167A (ko) * | 2015-07-09 | 2017-01-18 | 램 리써치 코포레이션 | 웨이퍼 부착을 감소시키기 위해 통합된 탄성중합체 립시일 및 컵 하단부 |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6299741B1 (en) | 1999-11-29 | 2001-10-09 | Applied Materials, Inc. | Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus |
| US6848970B2 (en) | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
| US6537144B1 (en) | 2000-02-17 | 2003-03-25 | Applied Materials, Inc. | Method and apparatus for enhanced CMP using metals having reductive properties |
| US7066800B2 (en) | 2000-02-17 | 2006-06-27 | Applied Materials Inc. | Conductive polishing article for electrochemical mechanical polishing |
| JP4644926B2 (ja) * | 2000-10-13 | 2011-03-09 | ソニー株式会社 | 半導体製造装置および半導体装置の製造方法 |
| WO2002083995A1 (en) * | 2001-04-12 | 2002-10-24 | Arthur, Keigler | Method of and apparatus for controlling fluid flow |
| JP2003027280A (ja) * | 2001-07-18 | 2003-01-29 | Ebara Corp | めっき装置 |
| US7150816B2 (en) * | 2001-08-31 | 2006-12-19 | Semitool, Inc. | Apparatus and method for deposition of an electrophoretic emulsion |
| TWI275436B (en) | 2002-01-31 | 2007-03-11 | Ebara Corp | Electrochemical machining device, and substrate processing apparatus and method |
| TWI274393B (en) * | 2002-04-08 | 2007-02-21 | Acm Res Inc | Electropolishing and/or electroplating apparatus and methods |
| JP2006511699A (ja) * | 2002-07-22 | 2006-04-06 | エーシーエム リサーチ，インコーポレイティド | 厚さの計測値を使用した適応型の電解研磨と障壁及び犠牲層の除去 |
| JP3860111B2 (ja) * | 2002-12-19 | 2006-12-20 | 大日本スクリーン製造株式会社 | メッキ装置およびメッキ方法 |
| US7842169B2 (en) | 2003-03-04 | 2010-11-30 | Applied Materials, Inc. | Method and apparatus for local polishing control |
| US8804535B2 (en) * | 2009-03-25 | 2014-08-12 | Avaya Inc. | System and method for sending packets using another device's network address |
| TWI410531B (zh) * | 2010-05-07 | 2013-10-01 | Taiwan Semiconductor Mfg | 直立式電鍍設備及其電鍍方法 |
| KR101211826B1 (ko) * | 2010-06-14 | 2012-12-18 | 연세대학교 산학협력단 | 자기유변유체를 이용한 피가공물의 연마장치 및 그 연마방법 |
| JP5782398B2 (ja) | 2012-03-27 | 2015-09-24 | 株式会社荏原製作所 | めっき方法及びめっき装置 |
| US9399827B2 (en) * | 2013-04-29 | 2016-07-26 | Applied Materials, Inc. | Microelectronic substrate electro processing system |
| SG11201508466QA (en) | 2013-05-09 | 2015-11-27 | Acm Res Shanghai Inc | Apparatus and method for plating and/or polishing wafer |
| KR101353378B1 (ko) * | 2013-08-19 | 2014-01-22 | 주식회사 케이엠 | 주사기용 믹싱 조인트 |
| CN104465481A (zh) * | 2013-09-22 | 2015-03-25 | 盛美半导体设备（上海）有限公司 | 晶圆夹盘 |
| CN105297127B (zh) * | 2014-05-30 | 2019-04-05 | 盛美半导体设备（上海）有限公司 | 带有电极的喷头装置 |
| JP6449091B2 (ja) * | 2015-04-20 | 2019-01-09 | 東京エレクトロン株式会社 | スリップリング、支持機構及びプラズマ処理装置 |
| GB201701166D0 (en) * | 2017-01-24 | 2017-03-08 | Picofluidics Ltd | An apparatus for electrochemically processing semiconductor substrates |
| KR102156430B1 (ko) * | 2020-04-28 | 2020-09-15 | 주식회사 스마트코리아피씨비 | 회전식 기판 도금장치 |
| CN114262920A (zh) * | 2020-09-16 | 2022-04-01 | 长鑫存储技术有限公司 | 晶圆电镀设备、漏气检测装置和方法、晶圆电镀方法 |
| EP3998374A4 (en) | 2020-09-16 | 2022-08-03 | Changxin Memory Technologies, Inc. | DEVICE AND METHOD FOR AIR LEAK DETECTION AND METHOD FOR ELECTROPLATING WAFER |
| CN112144096B (zh) * | 2020-09-25 | 2022-05-10 | 深圳市生利科技有限公司 | 一种锌镍合金电镀设备 |
| CN113013078A (zh) * | 2021-03-04 | 2021-06-22 | 苏州竣合信半导体科技有限公司 | 一种用于芯片定位的兼容芯片定位槽及其使用方法 |
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| JP2608485B2 (ja) * | 1990-05-30 | 1997-05-07 | 富士通株式会社 | めっき装置 |
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-
1999
- 1999-11-24 CN CNB998137944A patent/CN1191605C/zh not_active Expired - Fee Related
- 1999-11-24 KR KR10-2004-7011238A patent/KR100503553B1/ko not_active IP Right Cessation
- 1999-11-24 CN CNB2005100037736A patent/CN100382235C/zh not_active Expired - Fee Related
- 1999-11-24 EP EP99965053A patent/EP1133786A2/en not_active Withdrawn
- 1999-11-24 JP JP2000585913A patent/JP2002531702A/ja active Pending
- 1999-11-24 KR KR10-2001-7006569A patent/KR100516776B1/ko not_active IP Right Cessation
- 1999-11-24 IL IL14331699A patent/IL143316A/xx not_active IP Right Cessation
- 1999-11-24 WO PCT/US1999/028106 patent/WO2000033356A2/en active IP Right Grant
- 1999-11-24 CA CA002352160A patent/CA2352160A1/en not_active Abandoned
- 1999-11-24 AU AU31054/00A patent/AU3105400A/en not_active Abandoned
- 1999-11-24 KR KR1020057000594A patent/KR100562011B1/ko not_active IP Right Cessation
- 1999-11-26 TW TW088120687A patent/TW430919B/zh not_active IP Right Cessation
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2006
- 2006-11-22 JP JP2006315540A patent/JP2007119923A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170007167A (ko) * | 2015-07-09 | 2017-01-18 | 램 리써치 코포레이션 | 웨이퍼 부착을 감소시키기 위해 통합된 탄성중합체 립시일 및 컵 하단부 |
| KR102556923B1 (ko) | 2015-07-09 | 2023-07-17 | 램 리써치 코포레이션 | 웨이퍼 부착을 감소시키기 위해 통합된 탄성중합체 립시일 및 컵 하단부 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1346510A (zh) | 2002-04-24 |
| TW430919B (en) | 2001-04-21 |
| WO2000033356A9 (en) | 2001-08-02 |
| JP2002531702A (ja) | 2002-09-24 |
| IL143316A (en) | 2005-03-20 |
| KR20050013179A (ko) | 2005-02-02 |
| WO2000033356A3 (en) | 2001-07-12 |
| CN100382235C (zh) | 2008-04-16 |
| CA2352160A1 (en) | 2000-06-08 |
| JP2007119923A (ja) | 2007-05-17 |
| WO2000033356A2 (en) | 2000-06-08 |
| KR100516776B1 (ko) | 2005-09-26 |
| CN1191605C (zh) | 2005-03-02 |
| EP1133786A2 (en) | 2001-09-19 |
| CN1632914A (zh) | 2005-06-29 |
| IL143316A0 (en) | 2002-04-21 |
| KR100562011B1 (ko) | 2006-03-22 |
| KR20010086051A (ko) | 2001-09-07 |
| KR20040070317A (ko) | 2004-08-06 |
| AU3105400A (en) | 2000-06-19 |
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