KR100482996B1 - 비휘발성 강유전체 메모리 장치 - Google Patents

비휘발성 강유전체 메모리 장치 Download PDF

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Publication number
KR100482996B1
KR100482996B1 KR10-2002-0051932A KR20020051932A KR100482996B1 KR 100482996 B1 KR100482996 B1 KR 100482996B1 KR 20020051932 A KR20020051932 A KR 20020051932A KR 100482996 B1 KR100482996 B1 KR 100482996B1
Authority
KR
South Korea
Prior art keywords
electrode
drain
signal
amplifier
control signal
Prior art date
Application number
KR10-2002-0051932A
Other languages
English (en)
Korean (ko)
Other versions
KR20040020338A (ko
Inventor
강희복
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR10-2002-0051932A priority Critical patent/KR100482996B1/ko
Priority to JP2002381597A priority patent/JP4083568B2/ja
Priority to CNB021542929A priority patent/CN100350500C/zh
Publication of KR20040020338A publication Critical patent/KR20040020338A/ko
Application granted granted Critical
Publication of KR100482996B1 publication Critical patent/KR100482996B1/ko
Priority to JP2007289971A priority patent/JP4619394B2/ja
Priority to JP2007289970A priority patent/JP4619393B2/ja

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2297—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR10-2002-0051932A 2002-08-30 2002-08-30 비휘발성 강유전체 메모리 장치 KR100482996B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR10-2002-0051932A KR100482996B1 (ko) 2002-08-30 2002-08-30 비휘발성 강유전체 메모리 장치
JP2002381597A JP4083568B2 (ja) 2002-08-30 2002-12-27 強誘電体メモリ装置及びそのプログラム方法
CNB021542929A CN100350500C (zh) 2002-08-30 2002-12-31 铁电存储器件及其编程方法
JP2007289971A JP4619394B2 (ja) 2002-08-30 2007-11-07 強誘電体メモリ装置のプログラム方法
JP2007289970A JP4619393B2 (ja) 2002-08-30 2007-11-07 強誘電体メモリ装置のプログラム方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0051932A KR100482996B1 (ko) 2002-08-30 2002-08-30 비휘발성 강유전체 메모리 장치

Publications (2)

Publication Number Publication Date
KR20040020338A KR20040020338A (ko) 2004-03-09
KR100482996B1 true KR100482996B1 (ko) 2005-04-15

Family

ID=32026050

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0051932A KR100482996B1 (ko) 2002-08-30 2002-08-30 비휘발성 강유전체 메모리 장치

Country Status (3)

Country Link
JP (3) JP4083568B2 (ja)
KR (1) KR100482996B1 (ja)
CN (1) CN100350500C (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220161983A (ko) 2021-05-31 2022-12-07 연세대학교 산학협력단 강유전체 메모리 소자를 포함하는 감지 증폭기 기반 비휘발성 플립플롭

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100492800B1 (ko) * 2002-11-12 2005-06-07 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 제어 장치
KR100506061B1 (ko) * 2002-12-18 2005-08-03 주식회사 하이닉스반도체 특성 조정 장치를 부가한 메모리 장치
CN101252018B (zh) * 2007-09-03 2010-06-02 清华大学 采用新型时序操作的铁电编程信息存储单元的时序操作方法
KR100927407B1 (ko) * 2008-04-24 2009-11-19 주식회사 하이닉스반도체 전압 레귤레이터
WO2014020724A1 (ja) * 2012-08-01 2014-02-06 ルネサスエレクトロニクス株式会社 レベルシフト回路、半導体装置
US9812204B1 (en) * 2016-10-28 2017-11-07 AUCMOS Technologies USA, Inc. Ferroelectric memory cell without a plate line
CN110245749A (zh) * 2018-03-08 2019-09-17 三星电子株式会社 用于执行同或运算的计算单元、神经网络及方法
CN113808639B (zh) * 2021-09-24 2023-07-07 电子科技大学 一种铁电存储单元读写特性验证电路结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218566A (en) * 1991-08-15 1993-06-08 National Semiconductor Corporation Dynamic adjusting reference voltage for ferroelectric circuits
KR970017603A (ko) * 1995-09-08 1997-04-30 세끼자와 다다시 강유전체 메모리 및 강유전체 메모리로부터의 데이터 판독방법
KR20000016863A (ko) * 1998-08-25 2000-03-25 아끼구사 나오유끼 강유전체메모리,강유전체메모리의제조방법및강유전체메모리의시험방법
KR20010004110A (ko) * 1999-06-28 2001-01-15 김영환 강유전체 메모리 소자의 기준 전압 발생 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08279299A (ja) * 1995-04-04 1996-10-22 Toshiba Microelectron Corp 半導体集積回路および半導体メモリ
US5801985A (en) * 1995-07-28 1998-09-01 Micron Technology, Inc. Memory system having programmable control parameters
KR100248355B1 (ko) * 1997-04-09 2000-03-15 김영환 반도체 메모리 소자의 가변 비교전압 발생장치
KR100268444B1 (ko) * 1997-08-30 2000-10-16 윤종용 강유전체 랜덤 액세스 메모리 장치
US5995406A (en) * 1997-11-14 1999-11-30 Ramtron International Corporation Plate line segmentation in a 1T/1C ferroelectric memory
JP2000077982A (ja) * 1998-08-27 2000-03-14 Kobe Steel Ltd 半導体集積回路
JP2002015563A (ja) * 2000-06-29 2002-01-18 Sharp Corp 強誘電体メモリの基準電圧発生回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218566A (en) * 1991-08-15 1993-06-08 National Semiconductor Corporation Dynamic adjusting reference voltage for ferroelectric circuits
KR970017603A (ko) * 1995-09-08 1997-04-30 세끼자와 다다시 강유전체 메모리 및 강유전체 메모리로부터의 데이터 판독방법
KR20000016863A (ko) * 1998-08-25 2000-03-25 아끼구사 나오유끼 강유전체메모리,강유전체메모리의제조방법및강유전체메모리의시험방법
KR20010004110A (ko) * 1999-06-28 2001-01-15 김영환 강유전체 메모리 소자의 기준 전압 발생 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220161983A (ko) 2021-05-31 2022-12-07 연세대학교 산학협력단 강유전체 메모리 소자를 포함하는 감지 증폭기 기반 비휘발성 플립플롭

Also Published As

Publication number Publication date
JP4083568B2 (ja) 2008-04-30
KR20040020338A (ko) 2004-03-09
JP4619393B2 (ja) 2011-01-26
JP4619394B2 (ja) 2011-01-26
JP2008103074A (ja) 2008-05-01
JP2008084531A (ja) 2008-04-10
CN100350500C (zh) 2007-11-21
JP2004095135A (ja) 2004-03-25
CN1479311A (zh) 2004-03-03

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