KR100477950B1 - 정전기 방전 보호 구조를 가지는 감소된 캐패시턴스트랜지스터의 형성방법 - Google Patents

정전기 방전 보호 구조를 가지는 감소된 캐패시턴스트랜지스터의 형성방법 Download PDF

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Publication number
KR100477950B1
KR100477950B1 KR10-2003-7007165A KR20037007165A KR100477950B1 KR 100477950 B1 KR100477950 B1 KR 100477950B1 KR 20037007165 A KR20037007165 A KR 20037007165A KR 100477950 B1 KR100477950 B1 KR 100477950B1
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South Korea
Prior art keywords
region
forming
drain
substrate
transistor
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Expired - Fee Related
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KR10-2003-7007165A
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English (en)
Korean (ko)
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KR20030048485A (ko
Inventor
앨런마이클제이.
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인텔 코오퍼레이션
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR10-2003-7007165A 1997-12-18 1998-10-27 정전기 방전 보호 구조를 가지는 감소된 캐패시턴스트랜지스터의 형성방법 Expired - Fee Related KR100477950B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/993,441 US5847431A (en) 1997-12-18 1997-12-18 Reduced capacitance transistor with electro-static discharge protection structure
US08/993,441 1997-12-18
PCT/US1998/022754 WO1999031729A1 (en) 1997-12-18 1998-10-27 Reduced capacitance transistor with electro-static discharge protection structure and method for forming the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-7006497A Division KR100395345B1 (ko) 1997-12-18 1998-10-27 정전기 방전 보호 구조를 가지는 감소된 캐패시턴스트랜지스터 및 그것의 형성방법

Publications (2)

Publication Number Publication Date
KR20030048485A KR20030048485A (ko) 2003-06-19
KR100477950B1 true KR100477950B1 (ko) 2005-03-22

Family

ID=25539554

Family Applications (2)

Application Number Title Priority Date Filing Date
KR10-2003-7007165A Expired - Fee Related KR100477950B1 (ko) 1997-12-18 1998-10-27 정전기 방전 보호 구조를 가지는 감소된 캐패시턴스트랜지스터의 형성방법
KR10-2000-7006497A Expired - Fee Related KR100395345B1 (ko) 1997-12-18 1998-10-27 정전기 방전 보호 구조를 가지는 감소된 캐패시턴스트랜지스터 및 그것의 형성방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR10-2000-7006497A Expired - Fee Related KR100395345B1 (ko) 1997-12-18 1998-10-27 정전기 방전 보호 구조를 가지는 감소된 캐패시턴스트랜지스터 및 그것의 형성방법

Country Status (7)

Country Link
US (1) US5847431A (https=)
EP (1) EP1042808B1 (https=)
JP (1) JP2002509358A (https=)
KR (2) KR100477950B1 (https=)
CN (1) CN1143387C (https=)
AU (1) AU1202199A (https=)
WO (1) WO1999031729A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534867B1 (en) * 1999-09-27 2003-03-18 Kabushiki Kaisha Toshiba Semiconductor device, semiconductor element and method for producing same
CN106158832A (zh) * 2015-04-01 2016-11-23 联华电子股份有限公司 半导体结构

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876480A (en) * 1972-08-28 1975-04-08 Motorola Inc Method of manufacturing high speed, isolated integrated circuit
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
FR2598852B1 (fr) * 1986-05-16 1988-10-21 Eurotechnique Sa Dispositif de protection d'entree pour circuits integres en technologie cmos.
NL8900593A (nl) * 1989-03-13 1990-10-01 Philips Nv Halfgeleiderinrichting met een beveiligingsschakeling.
US5121179A (en) * 1990-10-08 1992-06-09 Seiko Epson Corporation Higher impedance pull-up and pull-down input protection resistors for MIS transistor integrated circuits
JPH03174763A (ja) * 1989-12-04 1991-07-29 Hitachi Ltd 半導体装置
FR2685817B1 (fr) * 1991-12-31 1994-03-11 Sgs Thomson Microelectronics Sa Protection generale d'un circuit integre contre les surcharges permanentes et decharges electrostatiques.
DE4334515C1 (de) * 1993-10-09 1994-10-20 Itt Ind Gmbh Deutsche Verpolungsschutz für integrierte elektronische Schaltkreise in CMOS-Technik
JP3493713B2 (ja) * 1994-03-04 2004-02-03 松下電器産業株式会社 半導体装置
JPH07321303A (ja) * 1994-05-19 1995-12-08 Kobe Steel Ltd Ｍｏｓ型半導体装置及びその製造方法
JP3332123B2 (ja) * 1994-11-10 2002-10-07 株式会社東芝 入力保護回路及びこれを用いた半導体装置
US5485025A (en) * 1994-12-02 1996-01-16 Texas Instruments Incorporated Depleted extrinsic emitter of collector-up heterojunction bipolar transistor
WO1996031907A1 (en) * 1995-04-06 1996-10-10 Industrial Technology Research Institute N-sided polygonal cell lay-out for multiple cell transistor
JPH0936357A (ja) * 1995-07-18 1997-02-07 Matsushita Electric Ind Co Ltd 半導体装置
US5623156A (en) * 1995-09-28 1997-04-22 Cypress Semiconductor Corporation Electrostatic discharge (ESD) protection circuit and structure for output drivers
KR100190008B1 (ko) * 1995-12-30 1999-06-01 윤종용 반도체 장치의 정전하 보호 장치
US5623787A (en) * 1996-01-05 1997-04-29 Ali; Elsayed A. Tile roof valley guard

Also Published As

Publication number Publication date
KR20010033125A (ko) 2001-04-25
EP1042808A4 (en) 2001-02-07
JP2002509358A (ja) 2002-03-26
AU1202199A (en) 1999-07-05
WO1999031729A1 (en) 1999-06-24
CN1143387C (zh) 2004-03-24
CN1282449A (zh) 2001-01-31
KR100395345B1 (ko) 2003-08-21
EP1042808B1 (en) 2008-07-30
US5847431A (en) 1998-12-08
KR20030048485A (ko) 2003-06-19
EP1042808A1 (en) 2000-10-11

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