US20020195664A1 - Electrostatic discharge protection device - Google Patents
Electrostatic discharge protection device Download PDFInfo
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- US20020195664A1 US20020195664A1 US10/228,725 US22872502A US2002195664A1 US 20020195664 A1 US20020195664 A1 US 20020195664A1 US 22872502 A US22872502 A US 22872502A US 2002195664 A1 US2002195664 A1 US 2002195664A1
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- 238000000034 method Methods 0.000 claims abstract description 85
- 125000001475 halogen functional group Chemical group 0.000 claims description 61
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- 230000000873 masking effect Effects 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000007943 implant Substances 0.000 description 22
- 238000002955 isolation Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Definitions
- the present invention relates generally to integrated circuits, and in particular to electrostatic discharge (ESD) devices.
- ESD electrostatic discharge
- An electrostatic discharge (ESD) event involves a high voltage or a large current inadvertently surging through a conductive path. If the path includes a pin or an external bonding pad and an internal circuit of an integrated circuit (IC), then the large current of the ESD event can surge through the pad and damage the internal circuit and thus the entire IC.
- ESD electrostatic discharge
- ESD protection devices To protect the IC from damage caused by an ESD event, many ESD protection devices have been designed. Among them is a snapback-based ESD protection device. Conventionally, there are two types of snapback-based ESD protection devices. These two types include field-oxide NPN and thin-oxide NPN devices. Thin-oxide NPN devices are also known as NMOS devices. Although the performance of these devices is acceptable, each of them has its problems and limitations.
- a novel ESD protection device overcomes the problems and limitations of the prior art ESD protection devices.
- the ESD protection device according to the invention is less susceptible to failures seen in the present NPN snapback ESD protection devices.
- the ESD protection device includes a substrate, a first doped region formed in the substrate, and a second doped region formed in the substrate. The first and second doped regions are separated from each other by only the substrate region. In addition, the ESD protection device includes no gate above the first and second doped regions.
- a method of producing a semiconductor device includes masking a substrate with a resist. Then a first and a second doped region are formed in the substrate. The first and second doped regions are separated by only the substrate, and a spacing between the first and second doped regions is defined by a length of the resist. Furthermore, the method includes not forming a gate above the first and second doped regions.
- FIG. 1 is a prior art thin-oxide NPN ESD protection device.
- FIG. 2A is a prior art field-oxide NPN ESD protection device.
- FIG. 2B is another prior art field-oxide NPN ESD protection device.
- FIG. 3 is an ESD protection device according to the invention.
- FIG. 4 illustrates a p-n junction of the ESD protection device of FIG. 3.
- FIG. 5 is a current versus voltage graph of the ESD protection device of FIG. 3 during an operating mode.
- FIGS. 6 A-C illustrate cross-sectional views of an ESD protection device at various processing stages according to one embodiment of the invention.
- FIGS. 7 A-E illustrate cross-sectional views of an ESD protection device at various processing stages according to another embodiment of the invention.
- FIGS. 8 A-E illustrate cross-sectional views of an ESD protection device at various processing stages according to another embodiment of the invention.
- FIGS. 9 A-E illustrate cross-sectional views of an ESD protection device at various processing stages according to another embodiment of the invention.
- FIG. 10 is a block diagram of an integrated circuit having the ESD protection device according to the invention.
- FIG. 11 is a block diagram of a semiconductor chip having an ESD protection device according to the invention.
- FIG. 1 is a prior art thin-oxide NPN ESD protection device.
- Device 100 includes a p-type substrate 102 having an n-type source and drain regions 104 and 106 .
- a gate 108 is separated from the substrate by a thin layer of gate oxide 110 .
- Gate 108 and source region 104 is connected to a ground at node 112 .
- Drain region 106 is connected to an external bonding pad 114 .
- device 100 is not conductive.
- a high voltage occurs at external bonding pad 114 .
- the voltage When the voltage reaches a breakdown voltage level of a p-n junction (substrate/drain junction) of device 100 , the device becomes conductive.
- a large amount of current starts to flow between source and drain regions 104 and 106 .
- the current flow effectively reduces the high voltage at external bonding pad 114 thus protecting any internal circuit connected to external bonding pad 114 .
- One problem associated with device 100 of FIGS. 1 involves the integrity of the gate oxide.
- the gate oxide can be put under a tremendous stress or even be ruptured during an ESD event.
- a high electric field developed due to high voltage at pad 114 ) at the region underneath gate oxide 110 near the edge of drain 106 can rupture gate oxide 110 .
- the high electric field can be reduced by connecting a resistor between node 112 and gate 108 .
- the device still suffers from other factors.
- a high temperature at the gate-drain edge is generated by the power dissipation created by a large amount of current flowing from drain 106 to source 104 during a snapback operation.
- the high temperature along with the high electrical field, can escalate the stress or cause damage to the gate oxide. Moreover, the high temperature can also melt the portion of substrate 102 underneath gate oxide 110 , near drain 106 . Furthermore, device 100 is also susceptible to a leakage failure due to impact ionization, a well-known phenomenon to those skilled in the art. Impact ionization at the edge of drain 106 causes carriers (electrons or holes) to be trapped in gate oxide 110 . These trapped carriers cause a leakage path between drain 106 and substrate 102 and eventually contribute to undesirable performance or failure of the device.
- FIG. 2A is a prior art field-oxide NPN ESD protection device.
- device 200 includes a p-type substrate 202 having an n-type source and drain regions 204 and 206 which are separated by an isolation structure 208 .
- Source region 204 is connected to a ground.
- Drain region 206 is connected to an external bonding pad 210 .
- device 200 is not conductive.
- a high voltage occurs at external bonding pad 210 .
- the voltage reaches a breakdown voltage level of the p-n junction (substrate/drain junction) of device 200 , the device becomes conductive.
- a large amount of current starts to flow between source and drain regions 204 and 206 .
- the current flow effectively reduces the high voltage at external bonding pad 210 , thus, protecting any internal circuit connected to external bonding pad 210 .
- FIG. 2B is another prior art field-oxide NPN ESD protection device.
- device 220 includes a p-type substrate 222 having an n-type source and drain regions 224 and 226 which are separated by an isolation structure 228 .
- Source region 224 is connected to a ground.
- Drain region 226 is connected to an external bonding pad 230 .
- device 220 is not conductive.
- a high voltage occurs at external bonding pad 230 .
- the voltage reaches a breakdown voltage level of the p-n junction (substrate/drain junction) of device 220 , the device becomes conductive.
- a large amount of current starts to flow between source and drain region 224 and 226 .
- the current flow effectively reduces the high voltage at external bonding pad 230 thus protecting any internal circuit connected to external bonding pad 230 .
- One problem associated with device 220 of FIG. 2B includes a reduction of the feedback efficiency of the device.
- device 220 when device 220 is conductive, current flows from source 224 to drain 226 . Since isolation structure 228 is positioned between the source and drain, current has to flow down from source 224 , around structure 228 , and then up to drain 226 . Thus the current path is longer, and the direction is changed along the path.
- the increase in snapback voltage may require a larger device size so that the pad voltage during the ESD event does not increase because the increase in pad voltage could cause damage to the internal circuitry of the IC.
- a larger device size has its disadvantages.
- the increase in power dissipation can cause stress to the device leading to substandard performance. It can also cause damage to the device leading to failure to protect the internal circuity of the IC.
- FIG. 3 is a novel ESD protection device according to the invention.
- Device 300 includes a substrate 302 having a first doped (source) region 304 and a second doped (drain) region 306 .
- First doped region 304 and second doped region 306 are separated by only a region 311 of substrate 302 .
- substrate 302 has a p-type conductivity material, and first and second doped regions 304 and 306 have an n-type conductivity material.
- First and second doped regions 304 and 306 have a higher doping concentration than the doping concentration of substrate 302 .
- substrate 302 is lightly doped (indicated by p ⁇ ) and first and second doped regions 304 and 306 are heavily doped (indicated by n+).
- first doped region 304 can be connected to a ground at node 312 .
- first doped region 304 can also be connected to a voltage source or a power source.
- Second doped region 306 can be connected to an external bonding pad 312 .
- device 300 of FIG. 3 includes no gate structure above the first and second doped regions 304 and 306 , it is a gateless ESD protection device.
- Device 300 further comprises a first isolation structure 308 and a second isolation structure 310 .
- First isolation structure 308 is placed on an opposing side, side 313 , of the first doped region from substrate region 311 .
- Second isolation structure 310 is placed on an opposing side, side 315 , of the second doped region from substrate region 311 .
- the isolation structures are designed to isolate device 300 from other adjacent components within the IC.
- device 300 has no gate oxide. Since device 300 has no gate oxide, it does not suffer from gate oxide rupture problem and leakage failure as in the case of a thin-oxide device. Thus, this is one advantage of device 300 of the invention over the prior art device 100 shown in FIG. 1.
- Device 300 also has no isolation structure positioned between source region 304 and drain region 306 . Thus, current can travel in a shorter path and directly from source region 304 to drain region 306 and without changing direction. Therefore, the issue of high snapback voltage, as in the case of a field-oxide device 220 , is avoided.
- device 300 since device 300 includes no gates structure, when it conducts, an amount of current flowing between the first and second doped regions 304 and 306 is not controlled by a voltage potential of a gate above the first and second doped regions.
- FIG. 4 illustrates a p-n junction of ESD protection device 300 of FIG. 3.
- p-n junction 400 depicts the junction between p-type substrate 302 and n-type second doped region 306 when a reverse-bias voltage is applied to external bonding pad 312 .
- p-n junction 400 includes a center 402 and a space charge region 404 .
- the space charge region exists due to the difference in conductivity types of (p-type) substrate 302 and the (n-type) first and second doped regions 304 and 306 .
- Space charge region 404 has a first boundary 406 a and a second boundary 408 .
- first and second boundaries 406 a and 408 a are not symmetrical with reference to center 402 . As shown in FIG. 4, from center 402 , first boundary 406 a extends more into substrate 302 because second doped region 306 is heavily doped and substrate 302 is lightly doped. In an alternate embodiment, those of ordinary skill in the art will readily recognize that substrate 302 and first and second doped regions 304 and 306 can have the same doping concentration. In that case, first and second boundaries 406 a and 408 a will symmetrically extend from the center.
- space charge region 404 expands predominantly into substrate 302 .
- first boundary 406 a expands to a position indicated at 406 b
- second boundary 408 a expands to a position indicated at 408 b .
- Vbv reverse-bias breakdown voltage or breakover voltage
- FIG. 5 illustrates a current vs. voltage graph of the ESD protection device of FIG. 3 operating in a snapback mode.
- Vbv breakover voltage
- FIG. 5 illustrates a current vs. voltage graph of the ESD protection device of FIG. 3 operating in a snapback mode.
- Vbv breakover voltage
- device 300 starts to operate in a snapback mode and pulls the voltage at external bonding pad 312 to a snapback voltage (Vsb) as shown at region 506 .
- the current flows with low impedance in the snapback mode, as indicated by line 508 with a steep slope. The steep slope also indicates that the device has a low resistance between the first and second doped regions during the snapback mode. The flow of current effectively lowers the voltage at external bonding pad 312 to a safe level while conducting large currents.
- FIGS. 6 A-C illustrate cross-sectional views of an ESD protection device 600 , at various processing stages according to one embodiment according to the invention.
- FIG. 6A shows a substrate 601 .
- An implant process introduces p-type dopants into the substrate. In one embodiment, introducing p-type dopants forms a lightly doped substrate (p-) 601 .
- a resist 602 masks substrate 601 to expose a first and second exposed areas 603 and 605 which define future doped regions.
- An implant process introduces n-type dopants to the exposed areas 603 and 605 . In one embodiment, introducing n-type dopants forms heavily doped first and second regions 604 and 606 .
- FIG. 6A shows a substrate 601 .
- An implant process introduces p-type dopants into the substrate. In one embodiment, introducing p-type dopants forms a lightly doped substrate (p-) 601 .
- a resist 602 masks substrate 601 to
- device 600 after the resist is removed, device 600 has been formed which includes a first active region or an n-type first doped region 604 , and a second active region or an n-type second doped region 606 separated by a portion of the p-type substrate 601 . Furthermore, the space separating the first and second doped regions 604 and 606 is defined by the length of resist 602 .
- FIGS. 7 A-E illustrate cross-sectional views of an ESD protection device 700 , at various processing stages according to another embodiment of the invention.
- an implant process introduces p-type dopants into a substrate 701 .
- introducing p-type dopants forms a lightly doped substrate (p ⁇ ) 701 .
- a resist 702 masks substrate 701 to expose a first and second exposed areas 703 and 705 which define future doped regions.
- a first implant process introduces p-type dopants into the exposed areas to form a first and a second p-type (p-type halo) doped regions 724 and 726 .
- a second implant introduces n-type dopants into the exposed areas to form a first and second n-type lightly doped (LDD) regions 714 and 716 .
- LDD lightly doped
- resist 702 is removed, and another resist 703 masks substrate 701 to expose areas 707 and 709 .
- a third implant process introduces n-type dopants to the exposed areas to form a first (source) and second (drain) n-type heavily doped regions 704 and 706 (n+).
- resist 703 is removed to complete device 700 .
- Device 700 includes two active regions 734 and 736 . Each of the active regions includes a source/drain region 704 or 706 , an LDD region 714 or 716 and a halo region 724 or 726 . As shown in FIG. 7E, the source/drain, LDD and halo regions have different depths. Halo regions 724 and 726 have a first depth. LDD regions 714 and 716 have a second depth, which is shallower than the first depth. And source and drain region 704 and 706 have a third depth which is shallower than the second depth.
- FIGS. 8 A-E illustrate cross-sectional views of an ESD protection device 800 , at various processing stages according to another embodiment according to the invention.
- an implant process introduces p-type dopants into a substrate 801 .
- introducing p-type dopants forms a lightly doped substrate (p) 801 .
- a resist 802 masks substrate 801 to expose an exposed area 803 which define future doped region.
- a first implant process introduces p-type dopants into the exposed area to form a p-type (p-type halo) doped regions 824 .
- a second implant introduces n-type dopants into the exposed area to form an n-type lightly doped (LDD) regions 814 .
- LDD lightly doped
- resist 802 is removed, and another resist 803 masks substrate 801 to expose exposed areas 807 and 809 .
- a third implant process introduces n-type dopants to the exposed areas to form a first (source) and second (drain) n-type heavily doped regions 804 and 806 (n+).
- resist 803 is removed and device 800 has been formed.
- Device 800 includes first and second active regions 834 and 836 , each of which includes a source/drain region 804 or 806 .
- First region 804 further includes LDD region 814 and halo region 824 .
- Halo region 824 surrounds LDD region 814 , which in turn, surrounds source/drain region 804 .
- FIGS. 9 A-E illustrate cross-sectional views of an ESD protection device 900 , at various processing stages according to another embodiment according to the invention.
- a substrate 901 is provided.
- introducing p-type dopants forms a lightly doped substrate (p ⁇ ) 901 .
- a resist 902 masks substrate 901 to expose an area 903 .
- a first implant process introduces p-type dopants into the exposed area to form a p-type (p-type halo) doped regions 924 .
- a second implant introduces n-type dopants into the exposed area to form an n-type lightly doped (LDD) regions 914 .
- LDD lightly doped
- resist 902 is removed.
- Another resist 903 masks substrate 901 and regions 914 and 924 to expose areas 907 and 909 .
- a third implant process introduces n-type dopants to exposed areas 903 and 905 to form a source/drain region 906 and an ohmic-contact region 904 .
- Regions 906 and 904 have a higher doping concentration than a doping concentration of n-type LDD region 914 .
- resist 903 is removed to form device 900 .
- Device 900 includes first and second active regions 934 and 936 .
- First active region 934 includes LDD region 914 , halo region 924 surrounding LDD region 914 , and ohmic-contact region 904 adjacent to halo region 924 .
- Second active region 936 include source/drain region 906 .
- halo and LDD regions described in the processes of forming devices 700 , 800 and 900 provide one advantage. They allow a shorter and more stable device, which provides lower impedance. However, forming the halo and LDD regions introduces the misalignment between the mask steps.
- devices 600 , 700 , 800 and 900 are not exclusive. Other processes or steps can be used to achieve the same purpose.
- more mask steps can be used between implants, or multiple implants can be introduced and some of which may be grouped into common mask step.
- an additional mask can be used between the halo and the LDD implants.
- more or less implants other than the halo, LDD and source/drain can be introduced, and they can be grouped into common mask step.
- a device similar to any of the devices 600 - 900 includes the halo and LDD implants on both sides without a source/drain implant on either side.
- a source/drain implant can be introduced in an immediate proximity of the halo and LDD implants to provide the ohmic contacts.
- a device similar to any of the devices 600 - 900 includes the halo and LDD implants on both sides, and either the source or the drain is included in only one side.
- FIG. 10 is a block diagram of an integrated circuit 1000 having an ESD protection device according to the invention.
- Integrated circuit 1000 includes an external bonding pad 1002 connected to an internal circuit 1004 at node 1006 .
- a first ESD protection device 1008 is connected between node 1006 and a first voltage source 1007 .
- a second ESD protection device 1010 is connected between node 1006 and a second voltage source 1009 .
- ESD protection devices 1008 or 1010 represents the ESD protection devices 300 , 600 , 700 , 800 or 900 according to the invention.
- the first voltage source is substantially greater than the second voltage source.
- the first voltage source can be a voltage supply (or the operating voltage of the device) and the second voltage source can be a ground.
- ESD protection devices 1008 and 1010 do not conduct.
- a high voltage occurs at bonding pad 1002 .
- the devices begin to conduct and pull the voltage at external bonding pad 1002 back to the level of the snapback voltage and operate in a snapback mode.
- the voltage at node 1006 remains close to the level of the snapback voltage. Therefore, according to the teaching of the invention, internal circuit 1004 is protected by the ESD protection devices from the ESD event.
- FIG. 11 is a block diagram of a semiconductor chip having an ESD protection device according to the invention.
- chip 1100 includes a package 1102 having plurality of pins 1104 . As shown in a partially cut-away view, at least one of the pins of the package is connected to at least one ESD protection device 1106 of the present invention at a node 1108 .
- Device 1104 protects the chip from an ESD event and can be any of the ESD protection devices according to the invention, such as device 300 , 600 , 700 , 800 or 900 .
- a novel ESD protection device is provided which overcomes the problems and limitations of the prior art ESD protection devices.
- the ESD protection device according to the invention is less susceptible to failures seen in the present NPN snapback ESD protection devices.
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Abstract
An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a substrate, a first and a second doped region formed in the substrate. The first and second doped regions are separated from each other by only the substrate region. The ESD protection device includes no gate above the first and second doped regions. Furthermore, the distance separating the first and second doped regions is defined by a length of a resist during a process of forming the ESD protection device.
Description
- This application is a Divisional of U.S. application Ser. No. 09/648,919, filed Aug. 25, 2000 which is incorporated herein by reference.
- The present invention relates generally to integrated circuits, and in particular to electrostatic discharge (ESD) devices.
- An electrostatic discharge (ESD) event involves a high voltage or a large current inadvertently surging through a conductive path. If the path includes a pin or an external bonding pad and an internal circuit of an integrated circuit (IC), then the large current of the ESD event can surge through the pad and damage the internal circuit and thus the entire IC.
- To protect the IC from damage caused by an ESD event, many ESD protection devices have been designed. Among them is a snapback-based ESD protection device. Conventionally, there are two types of snapback-based ESD protection devices. These two types include field-oxide NPN and thin-oxide NPN devices. Thin-oxide NPN devices are also known as NMOS devices. Although the performance of these devices is acceptable, each of them has its problems and limitations.
- In general, problems associated with snapback-based NPN structures involves junction leakage failures following an ESD event. In addition, gate-oxide at the input-buffer can be damaged if the snapback voltage of the protection device is too high. The high snapback voltage can also cause damage to the gate-oxide in the protection device itself for a thin-oxide NPN device. These issues can lead to undesirable or substandard performance of the ESD protection device.
- For the reasons stated above, and for other reasons stated below which will become apparent to those skilled in the art upon reading and understanding the present specification, there is a need in the art for an improved ESD protection device which is less susceptible to failures seen in the present NPN snapback ESD protection devices.
- The problems and limitations associated with ESD protection devices are addressed by the present invention and will be understood by reading the following disclosure. A novel ESD protection device overcomes the problems and limitations of the prior art ESD protection devices. The ESD protection device according to the invention is less susceptible to failures seen in the present NPN snapback ESD protection devices.
- In one aspect, the ESD protection device includes a substrate, a first doped region formed in the substrate, and a second doped region formed in the substrate. The first and second doped regions are separated from each other by only the substrate region. In addition, the ESD protection device includes no gate above the first and second doped regions.
- In another aspect, a method of producing a semiconductor device includes masking a substrate with a resist. Then a first and a second doped region are formed in the substrate. The first and second doped regions are separated by only the substrate, and a spacing between the first and second doped regions is defined by a length of the resist. Furthermore, the method includes not forming a gate above the first and second doped regions.
- FIG. 1 is a prior art thin-oxide NPN ESD protection device.
- FIG. 2A is a prior art field-oxide NPN ESD protection device.
- FIG. 2B is another prior art field-oxide NPN ESD protection device.
- FIG. 3 is an ESD protection device according to the invention.
- FIG. 4 illustrates a p-n junction of the ESD protection device of FIG. 3.
- FIG. 5 is a current versus voltage graph of the ESD protection device of FIG. 3 during an operating mode.
- FIGS.6A-C illustrate cross-sectional views of an ESD protection device at various processing stages according to one embodiment of the invention.
- FIGS.7A-E illustrate cross-sectional views of an ESD protection device at various processing stages according to another embodiment of the invention.
- FIGS.8A-E illustrate cross-sectional views of an ESD protection device at various processing stages according to another embodiment of the invention.
- FIGS.9A-E illustrate cross-sectional views of an ESD protection device at various processing stages according to another embodiment of the invention.
- FIG. 10 is a block diagram of an integrated circuit having the ESD protection device according to the invention.
- FIG. 11 is a block diagram of a semiconductor chip having an ESD protection device according to the invention.
- The following detailed description of the embodiments refers to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific embodiments in which the inventions may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that process, electrical or mechanical changes may be made without departing from the scope of the present invention. The terms wafer and substrate used in the following description include any base semiconductor structure. Both are to be understood as including silicon-on-sapphire (SOS) technology, silicon-on-insulator (SOI) technology, thin film transistor (TFT) technology, doped and undoped semiconductors, epitaxial layers of a silicon supported by a base semiconductor structure, as well as other semiconductor structures well known to one skilled in the art. Furthermore, when reference is made to a wafer or substrate in the following description, previous process steps may have been used to form wells/junctions in the base semiconductor structure, and terms wafer or substrate include the underlying layers containing such wells/junctions. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims and equivalents thereof.
- FIG. 1 is a prior art thin-oxide NPN ESD protection device.
Device 100 includes a p-type substrate 102 having an n-type source anddrain regions gate 108 is separated from the substrate by a thin layer ofgate oxide 110.Gate 108 andsource region 104 is connected to a ground atnode 112. Drainregion 106 is connected to anexternal bonding pad 114. In a normal condition,device 100 is not conductive. During an ESD event, a high voltage occurs atexternal bonding pad 114. When the voltage reaches a breakdown voltage level of a p-n junction (substrate/drain junction) ofdevice 100, the device becomes conductive. A large amount of current starts to flow between source anddrain regions external bonding pad 114 thus protecting any internal circuit connected toexternal bonding pad 114. - One problem associated with
device 100 of FIGS. 1 involves the integrity of the gate oxide. The gate oxide can be put under a tremendous stress or even be ruptured during an ESD event. Indevice 100, a high electric field developed (due to high voltage at pad 114) at the region underneathgate oxide 110 near the edge ofdrain 106 can rupturegate oxide 110. The high electric field can be reduced by connecting a resistor betweennode 112 andgate 108. However, the device still suffers from other factors. During the ESD event, a high temperature at the gate-drain edge is generated by the power dissipation created by a large amount of current flowing fromdrain 106 tosource 104 during a snapback operation. The high temperature along with the high electrical field, can escalate the stress or cause damage to the gate oxide. Moreover, the high temperature can also melt the portion ofsubstrate 102 underneathgate oxide 110, neardrain 106. Furthermore,device 100 is also susceptible to a leakage failure due to impact ionization, a well-known phenomenon to those skilled in the art. Impact ionization at the edge ofdrain 106 causes carriers (electrons or holes) to be trapped ingate oxide 110. These trapped carriers cause a leakage path betweendrain 106 andsubstrate 102 and eventually contribute to undesirable performance or failure of the device. - FIG. 2A is a prior art field-oxide NPN ESD protection device. In the Figure,
device 200 includes a p-type substrate 202 having an n-type source and drainregions isolation structure 208.Source region 204 is connected to a ground.Drain region 206 is connected to anexternal bonding pad 210. In a normal condition,device 200 is not conductive. During an ESD event, a high voltage occurs atexternal bonding pad 210. When the voltage reaches a breakdown voltage level of the p-n junction (substrate/drain junction) ofdevice 200, the device becomes conductive. A large amount of current starts to flow between source and drainregions external bonding pad 210, thus, protecting any internal circuit connected toexternal bonding pad 210. - FIG. 2B is another prior art field-oxide NPN ESD protection device. In the Figure,
device 220 includes a p-type substrate 222 having an n-type source and drainregions isolation structure 228.Source region 224 is connected to a ground.Drain region 226 is connected to anexternal bonding pad 230. In a normal condition,device 220 is not conductive. During an ESD event, a high voltage occurs atexternal bonding pad 230. When the voltage reaches a breakdown voltage level of the p-n junction (substrate/drain junction) ofdevice 220, the device becomes conductive. A large amount of current starts to flow between source and drainregion external bonding pad 230 thus protecting any internal circuit connected toexternal bonding pad 230. - One problem associated with
device 220 of FIG. 2B, includes a reduction of the feedback efficiency of the device. Referring to FIG. 2B, whendevice 220 is conductive, current flows fromsource 224 to drain 226. Sinceisolation structure 228 is positioned between the source and drain, current has to flow down fromsource 224, aroundstructure 228, and then up todrain 226. Thus the current path is longer, and the direction is changed along the path. These two factors reduce the efficiency of the flow of the current resulting in an increase in snapback voltage. The increase in snapback voltage may require a larger device size so that the pad voltage during the ESD event does not increase because the increase in pad voltage could cause damage to the internal circuitry of the IC. However, a larger device size has its disadvantages. It increases total area of the IC. It also increases input capacitance. In addition, the increase in snapback voltage also causes an increase in power dissipation. The increase in power dissipation can cause stress to the device leading to substandard performance. It can also cause damage to the device leading to failure to protect the internal circuity of the IC. - FIG. 3 is a novel ESD protection device according to the invention.
Device 300 includes asubstrate 302 having a first doped (source)region 304 and a second doped (drain)region 306. First dopedregion 304 and seconddoped region 306 are separated by only aregion 311 ofsubstrate 302. In one embodiment,substrate 302 has a p-type conductivity material, and first and seconddoped regions doped regions substrate 302. In other words,substrate 302 is lightly doped (indicated by p−) and first and seconddoped regions doped region 304 can be connected to a ground atnode 312. Those of ordinary skill in the art can readily recognize that firstdoped region 304 can also be connected to a voltage source or a power source. Seconddoped region 306 can be connected to anexternal bonding pad 312. Furthermore, sincedevice 300 of FIG. 3 includes no gate structure above the first and seconddoped regions -
Device 300 further comprises afirst isolation structure 308 and asecond isolation structure 310.First isolation structure 308 is placed on an opposing side,side 313, of the first doped region fromsubstrate region 311.Second isolation structure 310 is placed on an opposing side,side 315, of the second doped region fromsubstrate region 311. The isolation structures are designed to isolatedevice 300 from other adjacent components within the IC. - As shown in FIG. 3,
device 300 has no gate oxide. Sincedevice 300 has no gate oxide, it does not suffer from gate oxide rupture problem and leakage failure as in the case of a thin-oxide device. Thus, this is one advantage ofdevice 300 of the invention over theprior art device 100 shown in FIG. 1.Device 300 also has no isolation structure positioned betweensource region 304 and drainregion 306. Thus, current can travel in a shorter path and directly fromsource region 304 to drainregion 306 and without changing direction. Therefore, the issue of high snapback voltage, as in the case of a field-oxide device 220, is avoided. In addition, sincedevice 300 includes no gates structure, when it conducts, an amount of current flowing between the first and seconddoped regions - FIG. 4 illustrates a p-n junction of
ESD protection device 300 of FIG. 3. In the Figure,p-n junction 400 depicts the junction between p-type substrate 302 and n-type second dopedregion 306 when a reverse-bias voltage is applied toexternal bonding pad 312. In FIG. 4,p-n junction 400 includes acenter 402 and aspace charge region 404. The space charge region exists due to the difference in conductivity types of (p-type)substrate 302 and the (n-type) first and seconddoped regions Space charge region 404 has afirst boundary 406 a and a second boundary 408. The first andsecond boundaries center 402. As shown in FIG. 4, fromcenter 402,first boundary 406 a extends more intosubstrate 302 because seconddoped region 306 is heavily doped andsubstrate 302 is lightly doped. In an alternate embodiment, those of ordinary skill in the art will readily recognize thatsubstrate 302 and first and seconddoped regions second boundaries - When the reverse-bias voltage at
external bonding pad 312 increases,space charge region 404 expands predominantly intosubstrate 302. As shown in FIG. 4,first boundary 406 a expands to a position indicated at 406 b, andsecond boundary 408 a expands to a position indicated at 408 b. As the reverse-bias voltage atexternal bonding pad 312 increases, the width ofspace charge region 404 becomes wider. When the reverse-bias voltage reaches a voltage level known as reverse-bias breakdown voltage or breakover voltage (Vbv), current begins to flow between seconddoped region 306 and thesubstrate 302, which is the initiation of the negative resistance region leading to snapback conduction between the dopedregion - FIG. 5 illustrates a current vs. voltage graph of the ESD protection device of FIG. 3 operating in a snapback mode. As shown in FIG. 5, when a reverse-bias voltage at
external bonding pad 312 is less than the breakover voltage (Vbv), there is little or an insignificant amount of current flowing. As indicated in the graph, atregion 502 the current is near zero. When the reverse-bias voltage reaches the breakover voltage (Vbv) as shown atpoint 504,device 300 starts to operate in a snapback mode and pulls the voltage atexternal bonding pad 312 to a snapback voltage (Vsb) as shown atregion 506. The current flows with low impedance in the snapback mode, as indicated byline 508 with a steep slope. The steep slope also indicates that the device has a low resistance between the first and second doped regions during the snapback mode. The flow of current effectively lowers the voltage atexternal bonding pad 312 to a safe level while conducting large currents. - FIGS.6A-C illustrate cross-sectional views of an
ESD protection device 600, at various processing stages according to one embodiment according to the invention. FIG. 6A shows asubstrate 601. An implant process introduces p-type dopants into the substrate. In one embodiment, introducing p-type dopants forms a lightly doped substrate (p-) 601. In FIG. 6B, a resist 602masks substrate 601 to expose a first and second exposedareas areas second regions device 600 has been formed which includes a first active region or an n-type first dopedregion 604, and a second active region or an n-type second dopedregion 606 separated by a portion of the p-type substrate 601. Furthermore, the space separating the first and seconddoped regions - FIGS.7A-E illustrate cross-sectional views of an
ESD protection device 700, at various processing stages according to another embodiment of the invention. In FIG. 7A, an implant process introduces p-type dopants into asubstrate 701. In one embodiment, introducing p-type dopants forms a lightly doped substrate (p−) 701. In FIG. 7B, a resist 702masks substrate 701 to expose a first and second exposedareas regions regions - In FIG. 7C, resist702 is removed, and another resist 703
masks substrate 701 to exposeareas regions 704 and 706 (n+). In FIG. 7E resist 703 is removed to completedevice 700.Device 700 includes twoactive regions drain region LDD region halo region Halo regions LDD regions region - FIGS.8A-E illustrate cross-sectional views of an
ESD protection device 800, at various processing stages according to another embodiment according to the invention. In FIG. 8A, an implant process introduces p-type dopants into asubstrate 801. In one embodiment, introducing p-type dopants forms a lightly doped substrate (p) 801. In FIG. 8B, a resist 802masks substrate 801 to expose an exposedarea 803 which define future doped region. A first implant process introduces p-type dopants into the exposed area to form a p-type (p-type halo) dopedregions 824. After that, a second implant introduces n-type dopants into the exposed area to form an n-type lightly doped (LDD)regions 814. - In FIG. 8C, resist802 is removed, and another resist 803
masks substrate 801 to expose exposedareas regions 804 and 806 (n+). In FIG. 8E resist 803 is removed anddevice 800 has been formed.Device 800 includes first and secondactive regions drain region First region 804 further includesLDD region 814 andhalo region 824.Halo region 824 surroundsLDD region 814, which in turn, surrounds source/drain region 804. - FIGS.9A-E illustrate cross-sectional views of an
ESD protection device 900, at various processing stages according to another embodiment according to the invention. In FIG. 9A, asubstrate 901 is provided. In one embodiment, introducing p-type dopants forms a lightly doped substrate (p−) 901. In FIG. 9B, a resist 902masks substrate 901 to expose anarea 903. A first implant process introduces p-type dopants into the exposed area to form a p-type (p-type halo) dopedregions 924. After that, a second implant introduces n-type dopants into the exposed area to form an n-type lightly doped (LDD)regions 914. - In FIG. 9C, resist902 is removed. Another resist 903
masks substrate 901 andregions areas areas 903 and 905 to form a source/drain region 906 and an ohmic-contact region 904.Regions type LDD region 914. In FIG. 9E resist 903 is removed to formdevice 900.Device 900 includes first and secondactive regions active region 934 includesLDD region 914,halo region 924 surroundingLDD region 914, and ohmic-contact region 904 adjacent tohalo region 924. Secondactive region 936 include source/drain region 906. - The halo and LDD regions described in the processes of forming
devices - The processes described above regarding
devices - In addition, other variations of
devices - FIG. 10 is a block diagram of an
integrated circuit 1000 having an ESD protection device according to the invention. Integratedcircuit 1000 includes anexternal bonding pad 1002 connected to aninternal circuit 1004 atnode 1006. A firstESD protection device 1008 is connected betweennode 1006 and afirst voltage source 1007. A secondESD protection device 1010 is connected betweennode 1006 and asecond voltage source 1009.ESD protection devices ESD protection devices - In a normal condition,
ESD protection devices bonding pad 1002. When the voltage reaches the breakover voltage of theESD protection devices external bonding pad 1002 back to the level of the snapback voltage and operate in a snapback mode. By operating in the snapback mode, the voltage atnode 1006 remains close to the level of the snapback voltage. Therefore, according to the teaching of the invention,internal circuit 1004 is protected by the ESD protection devices from the ESD event. - FIG. 11 is a block diagram of a semiconductor chip having an ESD protection device according to the invention. In the Figure,
chip 1100 includes apackage 1102 having plurality ofpins 1104. As shown in a partially cut-away view, at least one of the pins of the package is connected to at least oneESD protection device 1106 of the present invention at anode 1108.Device 1104 protects the chip from an ESD event and can be any of the ESD protection devices according to the invention, such asdevice - A novel ESD protection device is provided which overcomes the problems and limitations of the prior art ESD protection devices. The ESD protection device according to the invention is less susceptible to failures seen in the present NPN snapback ESD protection devices.
- Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement which is calculated to achieve the same purpose may be substituted for the specific embodiment shown. This application is intended to cover any adaptations or variations of the present invention. Therefore, it is intended that this invention be limited only by the claims and the equivalents thereof.
Claims (55)
1. A method of producing a semiconductor device, the method comprising:
masking a substrate with a resist, the substrate having no gate structure over the substrate; and
forming a first dope region and a second doped region in the substrate, wherein the first and second doped regions are separated by only the substrate, wherein a spacing between the first and second doped regions is defined by a length of the resist between the first and second doped regions, wherein the method includes forming no gate above the substrate.
2. The method of claim 1 , wherein:
the first and second doped regions have a first conductivity type; and
the substrate has a second conductivity type different from the first conductivity type.
3. The method of claim 1 further comprising:
forming a third doped region within the first doped region; and
forming a fourth doped region within the second doped region.
4. The method of claim 3 , wherein:
the first and second doped regions have a first conductivity type; and
the third and fourth doped regions have a second conductivity type different from the first conductivity type.
5. The method of claim 4 , wherein first and second doped regions have a higher doping concentration than the third and fourth doped regions.
6. The method of claim 4 further comprising:
forming a fifth doped region within the third source/drain region; and
forming sixth doped region within the fourth doped region.
7. The method of claim 6 , wherein:
the fifth and sixth doped regions have a first conductivity type; and
the first and second doped regions have a second conductivity type different from the first conductivity type.
8. A method of producing a semiconductor device, the method comprising:
providing a substrate having no gate structure over the substrate;
masking a substrate with a resist having openings for forming a first unmasked region and a second unmasked region of the substrate, wherein the unmasked regions are separated by a length of the resist between the unmasked regions;
implanting dopants into the first and second unmasked regions to form a first source/drain region and a second source/drain regions; and
removing the resist, wherein the method includes forming no gate above the substrate.
9. The method of claim 8 , wherein:
the first and second source/drain regions have a first conductivity type; and
the substrate has a second conductivity type different from the first conductivity type.
10. The method of claim 8 further comprising:
forming a first halo region surrounding the first source/drain region; and
forming second halo region surrounding the second source/drain region.
11. The method of claim 10 further comprising:
forming a first lightly doped region within the first source/drain region; and
forming second lightly doped region within the second source/drain region.
12. The method of claim 11 , wherein:
the first and second lightly doped regions and the first and second source/drain regions have a first conductivity type.
the substrate and the first and second halo regions have a second conductivity type different from the first conductivity type.
13. The method of claim 11 , wherein first and second source/drain regions have a higher doping concentration than the lightly doped regions.
14. A method of producing a semiconductor device, the method comprising:
providing a substrate having no gate structure over the substrate;
masking the substrate with a resist to define a first unmasked region and second unmasked region, the first and second unmasked regions being separated by a distance equaled to a length of a the resist between the first and second unmasked regions;
implanting dopants into the first and second unmasked regions to form a first source/drain region; and
removing the resist, wherein the method includes forming no gate above the substrate.
15. The method of claim 14 , wherein:
the first and second source/drain regions have a first conductivity type; and
the substrate has a second conductivity type different from the first conductivity type.
16. The method of claim 14 further comprising:
forming a first halo region surrounding the first source/drain region; and
forming second halo region surrounding the second source/drain region.
17. The method of claim 16 further comprising:
forming a first lightly doped region within the first source/drain region; and
forming second lightly doped region within the second source/drain region.
18. The method of claim 17 , wherein:
the first and second lightly doped regions and the first and second source/drain regions have a first conductivity type.
the substrate and the first and second halo regions have a second conductivity type different from the first conductivity type.
19. The method of claim 17 , wherein first and second source/drain regions have a higher doping concentration than the lightly doped regions.
20. A method of making a semiconductor, the method comprising:
providing a substrate having no gate structure formed above the substrate;
forming a first halo region and a second halo region in the substrate;
forming a first lightly doped region within the first halo region;
forming a second lightly doped region within the second halo region;
forming a first source/drain region within the first lightly doped region; and
forming a second source/drain region within the second lightly doped region without forming a gate over the substrate, wherein the method includes forming no gate above the substrate.
21. The method of claim 20 , wherein:
the first and second source/drain regions have a first conductivity type; and
the substrate has a second conductivity type different from the first conductivity type.
22. The method of claim 21 , wherein:
the first and second source/drain regions have an n-type material; and
the substrate has a p-type material.
23. The method of claim 20 , wherein:
the first and second lightly doped regions and the first and second source/drain regions have a first conductivity type, and
the substrate and the first and second halo regions have a second conductivity type different from the first conductivity type.
24. The method of claim 20 , wherein first and second source/drain regions have a higher doping concentration than the first and second lightly doped regions.
25. The method of claim 20 , wherein first and second source/drain regions have a higher doping concentration than the substrate.
26. A method of making a semiconductor, the method comprising:
providing a substrate having no gate structure formed above the substrate;
masking the substrate with a resist, the resist having openings for exposing a first exposed area and a second exposed area of the substrate;
forming a first halo region in the first exposed area, and forming a second halo region in the second exposed area;
forming a first lightly doped region within the first halo region;
forming a second lightly doped region within the second halo region;
forming a first source/drain region within the first lightly doped region; and
forming a second source/drain region within the second lightly doped region, wherein the method includes forming no gate above the substrate.
27. The method of claim 26 , wherein first and second source/drain regions have a higher doping concentration than the first and second lightly doped regions.
28. The method of claim 26 , wherein first and second source/drain regions have a higher doping concentration than the substrate.
29. The method of claim 26 , wherein:
the substrate and the first and second halo regions have a first conductivity type; and
the first and second lightly doped regions and the first and second source/drain regions have a second conductivity type different from the first conductivity type.
30. The method of claim 29 , wherein:
the substrate and the first and second halo regions have a p-type material; and
the first and second lightly doped regions and the first and second source/drain regions have an n-type material.
31. The method of claim 26 further comprising:
removing the resist after forming the first and second halo regions; and
masking the substrate with a second resist before forming the first and second lightly doped regions, the second resist having openings for exposing the first and second halo regions.
32. The method of claim 31 further comprising:
removing the second resist after forming the first and second lightly doped regions; and
masking the substrate with a third resist before forming the first and second source/drain regions, the third resist having openings for exposing the lightly doped regions.
33. The method of claim 26 further comprising:
removing the resist after forming the first and second lightly doped regions; and
masking the substrate with a second resist before forming the first and second source/drain regions, the second resist having openings for exposing the lightly doped regions.
34. A method of making a semiconductor, the method comprising:
providing a substrate having no gate structure formed above the substrate;
masking the substrate with a first resist, the first resist having a first opening and a second opening for exposing a first exposed area and a second exposed area of the substrate; and
implanting dopant into the first exposed area to form a first halo region, and implanting dopant into the second exposed area to form a second halo region, wherein the first and second halo regions are separated by a portion of the substrate having a length equal to a length between the first and the second openings of the first resist;
removing the first resist;
masking the substrate with a second resist, the second resist having a first opening and a second opening for exposing the first and second halo regions;
forming a first lightly doped region within the first halo region, and forming a second lightly within the second halo region;
forming a first source/drain region within the first lightly doped region; and forming a second source/drain region within the second lightly doped region, wherein the method includes forming no gate above the substrate.
35. The method of claim 34 , wherein first and second source/drain regions have a higher doping concentration than the first and second lightly doped regions.
36. The method of claim 34 , wherein first and second source/drain regions have a higher doping concentration than the substrate.
37. The method of claim 34 , wherein:
the substrate and the first and second halo regions have a first conductivity type; and
the first and second lightly doped regions and the first and second source/drain regions have a second conductivity type different from the first conductivity type.
38. The method of claim 37 , wherein:
the substrate and the first and second halo regions have a p-type material; and
the first and second lightly doped regions and the first and second source/drain regions have an n-type material.
39. A method of making a semiconductor, the method comprising:
providing a substrate having no gate structure formed above the substrate;
masking the substrate with a first resist, the first resist having a first opening and a second opening for exposing a first exposed area and a second exposed area of the substrate;
implanting dopant into the first exposed area to form a first halo region, and implanting dopant into the second exposed area to form a second halo region, wherein the first and second halo regions are separated by a portion of the substrate having a length equal to a length between the first and the second openings of the first resist; removing the first resist;
masking the substrate with a second resist, the second resist having a first opening and a second opening for exposing the first and second halo regions;
forming a first lightly doped region within the first halo region, and forming a second lightly within the second halo region, wherein the first and second lightly doped regions are separated by distance equal to a length between the first and the second openings of the second resist;
removing the second resist;
masking the substrate with a third resist, the third resist having a first opening and a second opening for exposing the first and second lightly doped regions; and
forming a first source/drain region within the first lightly doped region, and forming a second source/drain region within the second lightly doped region, wherein the method includes forming no gate above the substrate.
40. The method of claim 39 , wherein first and second source/drain regions have a higher doping concentration than the first and second lightly doped regions.
41. The method of claim 39 , wherein first and second source/drain regions have a higher doping concentration than the substrate.
42. The method of claim 39 , wherein:
the substrate and the first and second halo regions have a first conductivity type; and
the first and second lightly doped regions and the first and second source/drain regions have a second conductivity type different from the first conductivity type.
43. The method of claim 42 , wherein:
the substrate and the first and second halo regions have a p-type material; and
the first and second lightly doped regions and the first and second source/drain regions have an n-type material.
44. A method of making a semiconductor, the method comprising:
providing a substrate having no gate structure formed above the substrate;
masking the substrate with a first resist, the first resist having an opening for exposing an exposed area the substrate;
forming a halo region and a lightly doped region in the exposed area;
removing the first resist;
masking the substrate with a second resist, the second resist having a first opening for exposing the halo and the doped regions, and a second opening for exposing a second exposed area of the substrate; and
forming a first source/drain region within the lightly doped region, and forming a second source/drain region in the second exposed area of the substrate, wherein the method includes forming no gate above the substrate.
45. The method of claim 44 , wherein first and second source/drain regions have a higher doping concentration than the lightly doped region.
46. The method of claim 44 , wherein first and second source/drain regions have a higher doping concentration than the substrate.
47. The method of claim 44 , wherein:
the substrate and the halo region have a first conductivity type; and
the lightly doped region and the first and second source/drain regions have a second conductivity type different from the first conductivity type.
48. The method of claim 47 , wherein:
the substrate and the halo region have a p-type material; and
the lightly doped region and the first and second source/drain regions have an n-type material.
49. A method of making a semiconductor, the method comprising:
providing a substrate having no gate structure formed above the substrate;
masking the substrate with a first resist, the first resist having an opening for exposing an exposed area the substrate;
forming a halo region and a lightly doped region in the exposed area;
removing the first resist;
masking the substrate with a second resist, the second resist having a first opening for exposing a second exposed area of the substrate, and a second opening for exposing a third exposed area of the substrate, and
forming a first source/drain region in the second exposed area, and forming a second source/drain region in the third exposed area, wherein the method includes forming no gate above the substrate.
50. The method of claim 49 , wherein masking a second resist include masking the halo and lightly doped regions.
51. The method of claim 49 , wherein the first source/drain region is adjacent to the halo region.
52. The method of claim 49 , wherein first and second source/drain regions have a higher doping concentration than the lightly doped region.
53. The method of claim 49 , wherein first and second source/drain regions have a higher doping concentration than the substrate.
54. The method of claim 49 , wherein:
the substrate and the halo region have a first conductivity type; and
the lightly doped region and the first and second source/drain regions have a second conductivity type different from the first conductivity type.
55. The method of claim 54 , wherein:
the substrate and the halo region have a p-type material; and
the lightly doped region and the first and second source/drain regions have an n-type material.
Priority Applications (1)
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US10/228,725 US20020195664A1 (en) | 2000-08-25 | 2002-08-27 | Electrostatic discharge protection device |
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US09/648,919 US6914306B1 (en) | 2000-08-25 | 2000-08-25 | Electrostatic discharge protection device |
US10/228,725 US20020195664A1 (en) | 2000-08-25 | 2002-08-27 | Electrostatic discharge protection device |
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US09/648,919 Division US6914306B1 (en) | 2000-08-25 | 2000-08-25 | Electrostatic discharge protection device |
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US6939752B1 (en) * | 2003-08-22 | 2005-09-06 | Altera Corporation | Apparatus and methods for integrated circuit with devices with body contact and devices with electrostatic discharge protection |
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US6046476A (en) * | 1995-07-06 | 2000-04-04 | Mitsubishi Denki Kabushiki Kaisha | SOI input protection circuit |
US5729420A (en) * | 1995-12-20 | 1998-03-17 | Samsung Electronics Co., Ltd. | High voltage recoverable input protection circuit and protection device |
US5705841A (en) * | 1995-12-22 | 1998-01-06 | Winbond Electronics Corporation | Electrostatic discharge protection device for integrated circuits and its method for fabrication |
US5889309A (en) * | 1996-11-07 | 1999-03-30 | Windbond Electronics, Corp. | Electrostatic discharge protection circuit |
US6163056A (en) * | 1998-07-02 | 2000-12-19 | Oki Electric Industry Co., Ltd. | Semiconductor device having electrostatic discharge |
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