KR100470514B1 - 금속이온함량이낮은계면활성제의제조방법및상기계면활성제를함유한현상제의제조방법 - Google Patents

금속이온함량이낮은계면활성제의제조방법및상기계면활성제를함유한현상제의제조방법 Download PDF

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Publication number
KR100470514B1
KR100470514B1 KR10-1998-0702153A KR19980702153A KR100470514B1 KR 100470514 B1 KR100470514 B1 KR 100470514B1 KR 19980702153 A KR19980702153 A KR 19980702153A KR 100470514 B1 KR100470514 B1 KR 100470514B1
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South Korea
Prior art keywords
ion exchange
exchange resin
surfactant
developer
solvent
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Expired - Fee Related
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KR10-1998-0702153A
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English (en)
Korean (ko)
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KR19990063687A (ko
Inventor
달리 라만 엠.
피. 오빈 다니엘
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클라리언트 인터내셔널 리미티드
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Publication of KR19990063687A publication Critical patent/KR19990063687A/ko
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Publication of KR100470514B1 publication Critical patent/KR100470514B1/ko
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR10-1998-0702153A 1995-09-26 1996-09-25 금속이온함량이낮은계면활성제의제조방법및상기계면활성제를함유한현상제의제조방법 Expired - Fee Related KR100470514B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8/533,828 1995-09-26
US08/533,828 1995-09-26
US08/533,828 US5750031A (en) 1995-09-26 1995-09-26 Process for producing surfactant having a low metal ion level and developer produced therefrom
PCT/US1996/015430 WO1997012281A1 (en) 1995-09-26 1996-09-25 Process for producing surfactant having a low metal ion level and developer produced therefrom

Publications (2)

Publication Number Publication Date
KR19990063687A KR19990063687A (ko) 1999-07-26
KR100470514B1 true KR100470514B1 (ko) 2005-09-15

Family

ID=24127598

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Application Number Title Priority Date Filing Date
KR10-1998-0702153A Expired - Fee Related KR100470514B1 (ko) 1995-09-26 1996-09-25 금속이온함량이낮은계면활성제의제조방법및상기계면활성제를함유한현상제의제조방법

Country Status (8)

Country Link
US (1) US5750031A (enExample)
EP (1) EP0852743B1 (enExample)
JP (1) JPH11512845A (enExample)
KR (1) KR100470514B1 (enExample)
CN (1) CN1096628C (enExample)
DE (1) DE69605207T2 (enExample)
TW (1) TW515933B (enExample)
WO (1) WO1997012281A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR101268052B1 (ko) * 2008-05-26 2013-05-24 가오 가부시키가이샤 반도체 장치용 기판용 세정액

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US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5962183A (en) * 1995-11-27 1999-10-05 Clariant Finance (Bvi) Limited Metal ion reduction in photoresist compositions by chelating ion exchange resin
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
WO2002023598A2 (en) * 2000-09-15 2002-03-21 Infineon Technologies North America Corp. A method to reduce post-development defects without sacrificing throughput
US6531267B2 (en) * 2001-04-11 2003-03-11 Clariant Finance (Bvi) Limited Process for producing acid sensitive liquid composition containing a carbonate
KR100593668B1 (ko) * 2004-01-20 2006-06-28 삼성전자주식회사 세정액 조성물 및 이를 이용한 반도체 장치의 세정방법
JP5002360B2 (ja) * 2007-07-23 2012-08-15 富士フイルム株式会社 パターン形成方法
US8084406B2 (en) * 2007-12-14 2011-12-27 Lam Research Corporation Apparatus for particle removal by single-phase and two-phase media
TWI453691B (zh) * 2012-09-21 2014-09-21 Cube Software Corp Examination of blood sampling number and test information integration system
WO2017169834A1 (ja) * 2016-03-31 2017-10-05 富士フイルム株式会社 半導体製造用処理液、及び、パターン形成方法
CN112859551A (zh) * 2021-03-04 2021-05-28 杭州格林达电子材料股份有限公司 一种芯片集成电路四甲基氢氧化铵显影液用非离子表面活性剂的提纯方法及其显影液

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US5286606A (en) * 1992-12-29 1994-02-15 Hoechst Celanese Corporation Process for producing a developer having a low metal ion level

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US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
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US5962183A (en) * 1995-11-27 1999-10-05 Clariant Finance (Bvi) Limited Metal ion reduction in photoresist compositions by chelating ion exchange resin

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0413559A2 (en) * 1989-08-16 1991-02-20 Hoechst Celanese Corporation Developer composition for positive working color proofing films
US5286606A (en) * 1992-12-29 1994-02-15 Hoechst Celanese Corporation Process for producing a developer having a low metal ion level

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101268052B1 (ko) * 2008-05-26 2013-05-24 가오 가부시키가이샤 반도체 장치용 기판용 세정액

Also Published As

Publication number Publication date
WO1997012281A1 (en) 1997-04-03
DE69605207D1 (de) 1999-12-23
CN1096628C (zh) 2002-12-18
DE69605207T2 (de) 2000-07-13
CN1196806A (zh) 1998-10-21
EP0852743B1 (en) 1999-11-17
TW515933B (en) 2003-01-01
KR19990063687A (ko) 1999-07-26
JPH11512845A (ja) 1999-11-02
US5750031A (en) 1998-05-12
EP0852743A1 (en) 1998-07-15

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