DE69605207T2 - Verfahren zur herstellung eines tensid mit niederingen metallionengehalt und daraus hergestellte entwicklern - Google Patents

Verfahren zur herstellung eines tensid mit niederingen metallionengehalt und daraus hergestellte entwicklern

Info

Publication number
DE69605207T2
DE69605207T2 DE69605207T DE69605207T DE69605207T2 DE 69605207 T2 DE69605207 T2 DE 69605207T2 DE 69605207 T DE69605207 T DE 69605207T DE 69605207 T DE69605207 T DE 69605207T DE 69605207 T2 DE69605207 T2 DE 69605207T2
Authority
DE
Germany
Prior art keywords
low
surfactant
producing
metal ion
ion content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69605207T
Other languages
English (en)
Other versions
DE69605207D1 (de
Inventor
M Rahman
Daniel Aubin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Application granted granted Critical
Publication of DE69605207D1 publication Critical patent/DE69605207D1/de
Publication of DE69605207T2 publication Critical patent/DE69605207T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
DE69605207T 1995-09-26 1996-09-25 Verfahren zur herstellung eines tensid mit niederingen metallionengehalt und daraus hergestellte entwicklern Expired - Fee Related DE69605207T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/533,828 US5750031A (en) 1995-09-26 1995-09-26 Process for producing surfactant having a low metal ion level and developer produced therefrom
PCT/US1996/015430 WO1997012281A1 (en) 1995-09-26 1996-09-25 Process for producing surfactant having a low metal ion level and developer produced therefrom

Publications (2)

Publication Number Publication Date
DE69605207D1 DE69605207D1 (de) 1999-12-23
DE69605207T2 true DE69605207T2 (de) 2000-07-13

Family

ID=24127598

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69605207T Expired - Fee Related DE69605207T2 (de) 1995-09-26 1996-09-25 Verfahren zur herstellung eines tensid mit niederingen metallionengehalt und daraus hergestellte entwicklern

Country Status (8)

Country Link
US (1) US5750031A (de)
EP (1) EP0852743B1 (de)
JP (1) JPH11512845A (de)
KR (1) KR100470514B1 (de)
CN (1) CN1096628C (de)
DE (1) DE69605207T2 (de)
TW (1) TW515933B (de)
WO (1) WO1997012281A1 (de)

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US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5962183A (en) * 1995-11-27 1999-10-05 Clariant Finance (Bvi) Limited Metal ion reduction in photoresist compositions by chelating ion exchange resin
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
WO2002023598A2 (en) * 2000-09-15 2002-03-21 Infineon Technologies North America Corp. A method to reduce post-development defects without sacrificing throughput
US6531267B2 (en) * 2001-04-11 2003-03-11 Clariant Finance (Bvi) Limited Process for producing acid sensitive liquid composition containing a carbonate
KR100593668B1 (ko) * 2004-01-20 2006-06-28 삼성전자주식회사 세정액 조성물 및 이를 이용한 반도체 장치의 세정방법
JP5002360B2 (ja) * 2007-07-23 2012-08-15 富士フイルム株式会社 パターン形成方法
US8226775B2 (en) * 2007-12-14 2012-07-24 Lam Research Corporation Methods for particle removal by single-phase and two-phase media
JP5086893B2 (ja) * 2008-05-26 2012-11-28 花王株式会社 半導体デバイス用基板用の洗浄液
TWI453691B (zh) * 2012-09-21 2014-09-21 Cube Software Corp Examination of blood sampling number and test information integration system
CN108885412B (zh) * 2016-03-31 2022-04-05 富士胶片株式会社 半导体制造用处理液及图案形成方法
CN112859551A (zh) * 2021-03-04 2021-05-28 杭州格林达电子材料股份有限公司 一种芯片集成电路四甲基氢氧化铵显影液用非离子表面活性剂的提纯方法及其显影液

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US5246818A (en) * 1989-08-16 1993-09-21 Hoechst Celanese Corporation Developer composition for positive working color proofing films
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KR100231655B1 (ko) * 1991-12-18 1999-11-15 마이클 에이. 카푸토 노볼락 수지중의 금속 이온 감소 방법
JP3184530B2 (ja) * 1992-03-06 2001-07-09 クラリアント・ファイナンス・（ビーブイアイ）・リミテッド 金属イオンレベルが低いフォトレジスト
US5300628A (en) * 1992-06-29 1994-04-05 Ocg Microelectronic Materials, Inc. Selected chelate resins and their use to remove multivalent metal impurities from resist components
SG52770A1 (en) * 1992-07-10 1998-09-28 Hoechst Celanese Corp Metal ion reduction in top anti-reflective coatings for photoresists
CA2097791A1 (en) * 1992-08-28 1994-03-01 Sunit S. Dixit High aspect ratio, flexible thick film positive photoresist
SG49596A1 (en) * 1992-11-25 1998-06-15 Hoechst Celanese Corp Metal ion reduction in bottom anti-reflective coatings for photoresists
WO1994014858A1 (en) * 1992-12-29 1994-07-07 Hoechst Celanese Corporation Metal ion reduction in polyhydroxystyrene and photoresists
US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
US5286606A (en) * 1992-12-29 1994-02-15 Hoechst Celanese Corporation Process for producing a developer having a low metal ion level
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WO1996012214A1 (en) * 1994-10-12 1996-04-25 Hoechst Celanese Corporation Low metal ion photoactive compounds and photoresists compositions produced therefrom
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5521052A (en) * 1994-12-30 1996-05-28 Hoechst Celanese Corporation Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
US5614352A (en) * 1994-12-30 1997-03-25 Hoechst Celanese Corporation Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5656413A (en) * 1995-09-28 1997-08-12 Hoechst Celanese Corporation Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom
US5962183A (en) * 1995-11-27 1999-10-05 Clariant Finance (Bvi) Limited Metal ion reduction in photoresist compositions by chelating ion exchange resin

Also Published As

Publication number Publication date
KR19990063687A (ko) 1999-07-26
TW515933B (en) 2003-01-01
JPH11512845A (ja) 1999-11-02
CN1196806A (zh) 1998-10-21
KR100470514B1 (ko) 2005-09-15
DE69605207D1 (de) 1999-12-23
EP0852743B1 (de) 1999-11-17
WO1997012281A1 (en) 1997-04-03
US5750031A (en) 1998-05-12
EP0852743A1 (de) 1998-07-15
CN1096628C (zh) 2002-12-18

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU

8339 Ceased/non-payment of the annual fee