DE69308326T2 - Verfahren zur herstellung eines entwicklers mit niedrigem metallionengehalt - Google Patents

Verfahren zur herstellung eines entwicklers mit niedrigem metallionengehalt

Info

Publication number
DE69308326T2
DE69308326T2 DE69308326T DE69308326T DE69308326T2 DE 69308326 T2 DE69308326 T2 DE 69308326T2 DE 69308326 T DE69308326 T DE 69308326T DE 69308326 T DE69308326 T DE 69308326T DE 69308326 T2 DE69308326 T2 DE 69308326T2
Authority
DE
Germany
Prior art keywords
developer
producing
metal ion
ion content
low metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69308326T
Other languages
English (en)
Other versions
DE69308326D1 (de
Inventor
M Rahman
Dana Durham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Hoechst Celanese Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp filed Critical Hoechst Celanese Corp
Publication of DE69308326D1 publication Critical patent/DE69308326D1/de
Application granted granted Critical
Publication of DE69308326T2 publication Critical patent/DE69308326T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE69308326T 1992-12-29 1993-12-20 Verfahren zur herstellung eines entwicklers mit niedrigem metallionengehalt Expired - Fee Related DE69308326T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/996,925 US5286606A (en) 1992-12-29 1992-12-29 Process for producing a developer having a low metal ion level
PCT/US1993/012405 WO1994015262A1 (en) 1992-12-29 1993-12-20 Process for producing a developer having a low metal ion level

Publications (2)

Publication Number Publication Date
DE69308326D1 DE69308326D1 (de) 1997-04-03
DE69308326T2 true DE69308326T2 (de) 1998-01-15

Family

ID=25543432

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69308326T Expired - Fee Related DE69308326T2 (de) 1992-12-29 1993-12-20 Verfahren zur herstellung eines entwicklers mit niedrigem metallionengehalt

Country Status (8)

Country Link
US (1) US5286606A (de)
EP (1) EP0677183B1 (de)
JP (1) JP3381922B2 (de)
KR (1) KR100280757B1 (de)
DE (1) DE69308326T2 (de)
HK (1) HK70897A (de)
SG (1) SG47545A1 (de)
WO (1) WO1994015262A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5580949A (en) * 1991-12-18 1996-12-03 Hoechst Celanese Corporation Metal ion reduction in novolak resins and photoresists
KR100231655B1 (ko) * 1991-12-18 1999-11-15 마이클 에이. 카푸토 노볼락 수지중의 금속 이온 감소 방법
EP0635145B1 (de) * 1992-03-06 1998-08-19 Clariant Finance (BVI) Limited Photoresists mit einem niedrigem grad metallionen
US5830990A (en) * 1992-07-10 1998-11-03 Clariant Finance (Bvi) Limited Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists
SG52770A1 (en) * 1992-07-10 1998-09-28 Hoechst Celanese Corp Metal ion reduction in top anti-reflective coatings for photoresists
WO1994012912A1 (en) * 1992-11-25 1994-06-09 Hoechst Celanese Corporation Metal ion reduction in bottom anti-reflective coatings for photoresists
US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
US5614349A (en) * 1992-12-29 1997-03-25 Hoechst Celanese Corporation Using a Lewis base to control molecular weight of novolak resins
DE4419166A1 (de) * 1994-06-01 1995-12-07 Hoechst Ag Entwickler für Photoresistschichten
GB9418743D0 (en) * 1994-09-16 1994-11-02 Dupont Uk Limited Fount solutions for printing processes
US5521052A (en) * 1994-12-30 1996-05-28 Hoechst Celanese Corporation Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
US5614352A (en) * 1994-12-30 1997-03-25 Hoechst Celanese Corporation Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5693749A (en) * 1995-09-20 1997-12-02 Hoechst Celanese Corporation Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5656413A (en) * 1995-09-28 1997-08-12 Hoechst Celanese Corporation Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom
US5962183A (en) * 1995-11-27 1999-10-05 Clariant Finance (Bvi) Limited Metal ion reduction in photoresist compositions by chelating ion exchange resin
US5665517A (en) * 1996-01-11 1997-09-09 Hoechst Celanese Corporation Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom
JP3029571B2 (ja) * 1996-06-18 2000-04-04 ナガセ電子化学株式会社 フォトレジスト剥離剤からＮａイオンを除去する方法
US6174501B1 (en) * 1997-10-31 2001-01-16 The Board Of Regents Of The University Of Nebraska System and process for producing biodiesel fuel with reduced viscosity and a cloud point below thirty-two (32) degrees fahrenheit
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
WO2002023598A2 (en) * 2000-09-15 2002-03-21 Infineon Technologies North America Corp. A method to reduce post-development defects without sacrificing throughput
US6531267B2 (en) * 2001-04-11 2003-03-11 Clariant Finance (Bvi) Limited Process for producing acid sensitive liquid composition containing a carbonate
CN1934233B (zh) * 2003-10-28 2015-02-04 塞克姆公司 清洁溶液和蚀刻剂及其使用方法
KR20050101458A (ko) * 2004-04-19 2005-10-24 주식회사 하이닉스반도체 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성방법
JP6703098B2 (ja) * 2016-03-31 2020-06-03 富士フイルム株式会社 半導体製造用処理液、及び、パターン形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH063549B2 (ja) * 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
US4784937A (en) * 1985-08-06 1988-11-15 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant
JPS6232453A (ja) * 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
JPS6472155A (en) * 1987-09-12 1989-03-17 Tama Kagaku Kogyo Kk Developing solution for positive type photoresist
US5175078A (en) * 1988-10-20 1992-12-29 Mitsubishi Gas Chemical Company, Inc. Positive type photoresist developer
KR100231655B1 (ko) * 1991-12-18 1999-11-15 마이클 에이. 카푸토 노볼락 수지중의 금속 이온 감소 방법
EP0635145B1 (de) * 1992-03-06 1998-08-19 Clariant Finance (BVI) Limited Photoresists mit einem niedrigem grad metallionen

Also Published As

Publication number Publication date
DE69308326D1 (de) 1997-04-03
SG47545A1 (en) 1998-04-17
KR960700464A (ko) 1996-01-20
KR100280757B1 (ko) 2001-03-02
JPH08505241A (ja) 1996-06-04
JP3381922B2 (ja) 2003-03-04
EP0677183B1 (de) 1997-02-26
HK70897A (en) 1997-06-06
WO1994015262A1 (en) 1994-07-07
US5286606A (en) 1994-02-15
EP0677183A1 (de) 1995-10-18

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: CLARIANT FINANCE (BVI) LTD., ROAD TOWN, TORTOLA, V

8328 Change in the person/name/address of the agent

Free format text: SPOTT WEINMILLER & PARTNER, 80336 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU

8339 Ceased/non-payment of the annual fee