DE69611837T2 - Reduktion des metallionengehaltes in fotoresist-formulierungen, mit chelataustauscherharzen - Google Patents

Reduktion des metallionengehaltes in fotoresist-formulierungen, mit chelataustauscherharzen

Info

Publication number
DE69611837T2
DE69611837T2 DE69611837T DE69611837T DE69611837T2 DE 69611837 T2 DE69611837 T2 DE 69611837T2 DE 69611837 T DE69611837 T DE 69611837T DE 69611837 T DE69611837 T DE 69611837T DE 69611837 T2 DE69611837 T2 DE 69611837T2
Authority
DE
Germany
Prior art keywords
metalion
reduction
content
exchange resins
photoresist formulations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69611837T
Other languages
English (en)
Other versions
DE69611837D1 (de
Inventor
Dalil Rahman
P Aubin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Publication of DE69611837D1 publication Critical patent/DE69611837D1/de
Application granted granted Critical
Publication of DE69611837T2 publication Critical patent/DE69611837T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69611837T 1995-11-27 1996-11-21 Reduktion des metallionengehaltes in fotoresist-formulierungen, mit chelataustauscherharzen Expired - Fee Related DE69611837T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/562,867 US5962183A (en) 1995-11-27 1995-11-27 Metal ion reduction in photoresist compositions by chelating ion exchange resin
PCT/US1996/018784 WO1997019969A1 (en) 1995-11-27 1996-11-21 Metal ion reduction in photoresist compositions by chelating ion exchange resin

Publications (2)

Publication Number Publication Date
DE69611837D1 DE69611837D1 (de) 2001-03-29
DE69611837T2 true DE69611837T2 (de) 2001-08-16

Family

ID=24248131

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69611837T Expired - Fee Related DE69611837T2 (de) 1995-11-27 1996-11-21 Reduktion des metallionengehaltes in fotoresist-formulierungen, mit chelataustauscherharzen

Country Status (8)

Country Link
US (1) US5962183A (de)
EP (1) EP0863925B1 (de)
JP (1) JP3805373B2 (de)
KR (1) KR100412530B1 (de)
CN (1) CN1097601C (de)
DE (1) DE69611837T2 (de)
TW (1) TW442709B (de)
WO (1) WO1997019969A1 (de)

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US5830990A (en) * 1992-07-10 1998-11-03 Clariant Finance (Bvi) Limited Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US6576139B1 (en) * 1996-07-30 2003-06-10 Kenneth C. Hou Process for purifying photoresist composition employing a filter sheet
US6379551B1 (en) * 1997-08-18 2002-04-30 Pall Corporation Method of removing metal ions using an ion exchange membrane
TW536666B (en) * 1998-02-02 2003-06-11 Clariant Int Ltd Process for producing a photoresist composition having a reduced tendency to produce particles
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
US6217667B1 (en) * 1999-09-24 2001-04-17 Semitool, Inc. Method for cleaning copper surfaces
US6221568B1 (en) * 1999-10-20 2001-04-24 International Business Machines Corporation Developers for polychloroacrylate and polychloromethacrylate based resists
KR100422941B1 (ko) * 2001-01-04 2004-03-12 주식회사 엘지화학 고분자 용액 내 잔류 금속 화합물의 제거 방법
US6610465B2 (en) * 2001-04-11 2003-08-26 Clariant Finance (Bvi) Limited Process for producing film forming resins for photoresist compositions
US20040206702A1 (en) * 2002-08-08 2004-10-21 Davidson James M. Use of an oxidizer to improve trace metals removal from photoresist and photoresist components
EP1917096A4 (de) * 2005-08-26 2010-03-31 Entegris Inc Poröse membranen mit austauschharz
JP5172118B2 (ja) * 2006-08-04 2013-03-27 三菱レイヨン株式会社 重合体湿粉、重合体湿粉の製造方法、重合体の製造方法およびレジスト組成物の製造方法
JP5556046B2 (ja) * 2009-03-31 2014-07-23 栗田工業株式会社 粗イオン交換樹脂の精製用の処理液
US20210277161A1 (en) * 2016-08-30 2021-09-09 Rohn And Haas Company Low-sodium resin
CN109426070A (zh) * 2017-08-25 2019-03-05 京东方科技集团股份有限公司 光刻胶组合物、金属图案以及阵列基板的制备方法
KR20200122354A (ko) * 2018-03-26 2020-10-27 후지필름 가부시키가이샤 감광성 수지 조성물과 그 제조 방법, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
CN113198549B (zh) * 2021-04-26 2023-01-31 宁波南大光电材料有限公司 一种去除光刻胶树脂中的金属杂质的方法

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US4033909A (en) * 1974-08-13 1977-07-05 Union Carbide Corporation Stable phenolic resoles
US4033910A (en) * 1975-09-26 1977-07-05 Union Carbide Corporation Methyl formate as an adjuvant in phenolic foam formation
GB1509354A (en) * 1976-04-24 1978-05-04 Maruzen Oil Co Ltd Process for purifying halogenated alkenyl-phenol polymers
US4250031A (en) * 1977-03-01 1981-02-10 Unitika Ltd. Phenolic chelate resin and method of adsorption treatment
US4195138A (en) * 1978-06-26 1980-03-25 The Dow Chemical Company Chelate resins prepared from the cured reaction product of a polyalkylenepolyamine and epoxide
US4452883A (en) * 1983-05-17 1984-06-05 Minnesota Mining And Manufacturing Company Barrier resin for photothermographic color separation
US4584261A (en) * 1984-07-27 1986-04-22 E. I. Du Pont De Nemours And Company Process for etching nonphotosensitive layer under washoff photopolymer layer
US4567130A (en) * 1984-07-27 1986-01-28 E. I. Du Pont De Nemours And Company Process for etching single photopolymer layer utilizing chemically soluble pigments
JPH063549B2 (ja) * 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
US4636540A (en) * 1985-07-08 1987-01-13 Atlantic Richfield Company Purification of polymer solutions
JPS6232453A (ja) * 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
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US4721665A (en) * 1986-09-29 1988-01-26 Polychrome Corporation Method for neutralizing acidic novolak resin in a lithographic coating composition
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JPH0465415A (ja) * 1990-07-04 1992-03-02 Hitachi Chem Co Ltd 不純金属成分の低減されたノボラツク樹脂の製造法
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JP3184530B2 (ja) * 1992-03-06 2001-07-09 クラリアント・ファイナンス・（ビーブイアイ）・リミテッド 金属イオンレベルが低いフォトレジスト
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US5521052A (en) * 1994-12-30 1996-05-28 Hoechst Celanese Corporation Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
US5614352A (en) * 1994-12-30 1997-03-25 Hoechst Celanese Corporation Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5656413A (en) * 1995-09-28 1997-08-12 Hoechst Celanese Corporation Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom

Also Published As

Publication number Publication date
CN1097601C (zh) 2003-01-01
DE69611837D1 (de) 2001-03-29
US5962183A (en) 1999-10-05
KR19990071532A (ko) 1999-09-27
JP3805373B2 (ja) 2006-08-02
CN1202913A (zh) 1998-12-23
JP2000501201A (ja) 2000-02-02
KR100412530B1 (ko) 2004-04-29
EP0863925B1 (de) 2001-02-21
TW442709B (en) 2001-06-23
EP0863925A1 (de) 1998-09-16
WO1997019969A1 (en) 1997-06-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU

8339 Ceased/non-payment of the annual fee