JPH11512845A - 金属イオン濃度が低い界面活性剤の製法及びこれから得られる現像剤 - Google Patents

金属イオン濃度が低い界面活性剤の製法及びこれから得られる現像剤

Info

Publication number
JPH11512845A
JPH11512845A JP9513625A JP51362597A JPH11512845A JP H11512845 A JPH11512845 A JP H11512845A JP 9513625 A JP9513625 A JP 9513625A JP 51362597 A JP51362597 A JP 51362597A JP H11512845 A JPH11512845 A JP H11512845A
Authority
JP
Japan
Prior art keywords
exchange resin
ion exchange
ppb
developer
surfactant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP9513625A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11512845A5 (enExample
Inventor
ラーマン・エム・ダリル
オービン・ダニエル・ピー
Original Assignee
クラリアント・インターナショナル・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by クラリアント・インターナショナル・リミテッド filed Critical クラリアント・インターナショナル・リミテッド
Publication of JPH11512845A publication Critical patent/JPH11512845A/ja
Publication of JPH11512845A5 publication Critical patent/JPH11512845A5/ja
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP9513625A 1995-09-26 1996-09-25 金属イオン濃度が低い界面活性剤の製法及びこれから得られる現像剤 Ceased JPH11512845A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/533,828 1995-09-26
US08/533,828 US5750031A (en) 1995-09-26 1995-09-26 Process for producing surfactant having a low metal ion level and developer produced therefrom
PCT/US1996/015430 WO1997012281A1 (en) 1995-09-26 1996-09-25 Process for producing surfactant having a low metal ion level and developer produced therefrom

Publications (2)

Publication Number Publication Date
JPH11512845A true JPH11512845A (ja) 1999-11-02
JPH11512845A5 JPH11512845A5 (enExample) 2008-07-03

Family

ID=24127598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9513625A Ceased JPH11512845A (ja) 1995-09-26 1996-09-25 金属イオン濃度が低い界面活性剤の製法及びこれから得られる現像剤

Country Status (8)

Country Link
US (1) US5750031A (enExample)
EP (1) EP0852743B1 (enExample)
JP (1) JPH11512845A (enExample)
KR (1) KR100470514B1 (enExample)
CN (1) CN1096628C (enExample)
DE (1) DE69605207T2 (enExample)
TW (1) TW515933B (enExample)
WO (1) WO1997012281A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009025708A (ja) * 2007-07-23 2009-02-05 Fujifilm Corp パターン形成方法
WO2017169834A1 (ja) * 2016-03-31 2017-10-05 富士フイルム株式会社 半導体製造用処理液、及び、パターン形成方法

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US5830990A (en) * 1992-07-10 1998-11-03 Clariant Finance (Bvi) Limited Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5962183A (en) * 1995-11-27 1999-10-05 Clariant Finance (Bvi) Limited Metal ion reduction in photoresist compositions by chelating ion exchange resin
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
WO2002023598A2 (en) * 2000-09-15 2002-03-21 Infineon Technologies North America Corp. A method to reduce post-development defects without sacrificing throughput
US6531267B2 (en) * 2001-04-11 2003-03-11 Clariant Finance (Bvi) Limited Process for producing acid sensitive liquid composition containing a carbonate
KR100593668B1 (ko) * 2004-01-20 2006-06-28 삼성전자주식회사 세정액 조성물 및 이를 이용한 반도체 장치의 세정방법
US8084406B2 (en) * 2007-12-14 2011-12-27 Lam Research Corporation Apparatus for particle removal by single-phase and two-phase media
JP5086893B2 (ja) * 2008-05-26 2012-11-28 花王株式会社 半導体デバイス用基板用の洗浄液
TWI453691B (zh) * 2012-09-21 2014-09-21 Cube Software Corp Examination of blood sampling number and test information integration system
CN112859551A (zh) * 2021-03-04 2021-05-28 杭州格林达电子材料股份有限公司 一种芯片集成电路四甲基氢氧化铵显影液用非离子表面活性剂的提纯方法及其显影液

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US2929808A (en) * 1956-04-04 1960-03-22 Exxon Research Engineering Co Removal of metal contaminants in polymerization processes
US4033909A (en) * 1974-08-13 1977-07-05 Union Carbide Corporation Stable phenolic resoles
US4033910A (en) * 1975-09-26 1977-07-05 Union Carbide Corporation Methyl formate as an adjuvant in phenolic foam formation
GB1509354A (en) * 1976-04-24 1978-05-04 Maruzen Oil Co Ltd Process for purifying halogenated alkenyl-phenol polymers
US4250031A (en) * 1977-03-01 1981-02-10 Unitika Ltd. Phenolic chelate resin and method of adsorption treatment
US4195138A (en) * 1978-06-26 1980-03-25 The Dow Chemical Company Chelate resins prepared from the cured reaction product of a polyalkylenepolyamine and epoxide
US4452883A (en) * 1983-05-17 1984-06-05 Minnesota Mining And Manufacturing Company Barrier resin for photothermographic color separation
US4584261A (en) * 1984-07-27 1986-04-22 E. I. Du Pont De Nemours And Company Process for etching nonphotosensitive layer under washoff photopolymer layer
US4567130A (en) * 1984-07-27 1986-01-28 E. I. Du Pont De Nemours And Company Process for etching single photopolymer layer utilizing chemically soluble pigments
JPH063549B2 (ja) * 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
US4636540A (en) * 1985-07-08 1987-01-13 Atlantic Richfield Company Purification of polymer solutions
JPS6232453A (ja) * 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
US4784937A (en) * 1985-08-06 1988-11-15 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant
US4747954A (en) * 1985-09-16 1988-05-31 The Dow Chemical Company Removal of metals from solutions
US4721665A (en) * 1986-09-29 1988-01-26 Polychrome Corporation Method for neutralizing acidic novolak resin in a lithographic coating composition
JPS6472155A (en) * 1987-09-12 1989-03-17 Tama Kagaku Kogyo Kk Developing solution for positive type photoresist
GB8729510D0 (en) * 1987-12-18 1988-02-03 Ucb Sa Photosensitive compositions containing phenolic resins & diazoquinone compounds
JPH01228560A (ja) * 1988-03-08 1989-09-12 Hitachi Chem Co Ltd 不純金属成分の低減された溶液の製造法
JP2640545B2 (ja) * 1988-08-10 1997-08-13 ヘキスト セラニーズ コーポレーション 感光性ノボラック樹脂
US5212044A (en) * 1988-09-08 1993-05-18 The Mead Corporation Photoresist composition including polyphenol and sensitizer
US5175078A (en) * 1988-10-20 1992-12-29 Mitsubishi Gas Chemical Company, Inc. Positive type photoresist developer
JPH03128903A (ja) * 1989-07-13 1991-05-31 Fine Kurei:Kk 合成樹脂の改質方法および改質合成樹脂
DE3923426A1 (de) * 1989-07-15 1991-01-17 Hoechst Ag Verfahren zur herstellung von novolak-harzen mit geringem metallionengehalt
US5246818A (en) * 1989-08-16 1993-09-21 Hoechst Celanese Corporation Developer composition for positive working color proofing films
US5041510A (en) * 1990-02-07 1991-08-20 Hoechst Celanese Corp. Acrylic copolymers exhibiting nonlinear optical response
JPH0465415A (ja) * 1990-07-04 1992-03-02 Hitachi Chem Co Ltd 不純金属成分の低減されたノボラツク樹脂の製造法
US5230988A (en) * 1991-03-12 1993-07-27 Fuji Photo Film Co., Ltd. Method of making lithographic printing plate
US5446125A (en) * 1991-04-01 1995-08-29 Ocg Microelectronic Materials, Inc. Method for removing metal impurities from resist components
US5378802A (en) * 1991-09-03 1995-01-03 Ocg Microelectronic Materials, Inc. Method for removing impurities from resist components and novolak resins
JPH0768296B2 (ja) * 1991-11-28 1995-07-26 丸善石油化学株式会社 ビニルフェノール系重合体の金属除去方法
JPH0768297B2 (ja) * 1991-11-28 1995-07-26 丸善石油化学株式会社 フォトレジスト用ビニルフェノール系重合体の精製方法
KR100231655B1 (ko) * 1991-12-18 1999-11-15 마이클 에이. 카푸토 노볼락 수지중의 금속 이온 감소 방법
DE69320468T2 (de) * 1992-03-06 1999-04-22 Clariant Finance (Bvi) Ltd., Road Town, Tortola Photoresists mit einem niedrigem grad metallionen
US5300628A (en) * 1992-06-29 1994-04-05 Ocg Microelectronic Materials, Inc. Selected chelate resins and their use to remove multivalent metal impurities from resist components
SG52770A1 (en) * 1992-07-10 1998-09-28 Hoechst Celanese Corp Metal ion reduction in top anti-reflective coatings for photoresists
CA2097791A1 (en) * 1992-08-28 1994-03-01 Sunit S. Dixit High aspect ratio, flexible thick film positive photoresist
EP0671025B1 (en) * 1992-11-25 1997-08-13 Hoechst Celanese Corporation Metal ion reduction in bottom anti-reflective coatings for photoresists
WO1994014858A1 (en) * 1992-12-29 1994-07-07 Hoechst Celanese Corporation Metal ion reduction in polyhydroxystyrene and photoresists
US5286606A (en) * 1992-12-29 1994-02-15 Hoechst Celanese Corporation Process for producing a developer having a low metal ion level
US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
US5472616A (en) * 1993-10-27 1995-12-05 Shipley Company, Inc. Modified anion exchange process
US5350714A (en) * 1993-11-08 1994-09-27 Shipley Company Inc. Point-of-use purification
US5500127A (en) * 1994-03-14 1996-03-19 Rohm And Haas Company Purification process
WO1996012214A1 (en) * 1994-10-12 1996-04-25 Hoechst Celanese Corporation Low metal ion photoactive compounds and photoresists compositions produced therefrom
US5837417A (en) * 1994-12-30 1998-11-17 Clariant Finance (Bvi) Limited Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
US5521052A (en) * 1994-12-30 1996-05-28 Hoechst Celanese Corporation Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
US5614352A (en) * 1994-12-30 1997-03-25 Hoechst Celanese Corporation Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin
US5750031A (en) * 1995-09-26 1998-05-12 Clariant Finance (Bvi) Limited Process for producing surfactant having a low metal ion level and developer produced therefrom
US5656413A (en) * 1995-09-28 1997-08-12 Hoechst Celanese Corporation Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom
US5962183A (en) * 1995-11-27 1999-10-05 Clariant Finance (Bvi) Limited Metal ion reduction in photoresist compositions by chelating ion exchange resin

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009025708A (ja) * 2007-07-23 2009-02-05 Fujifilm Corp パターン形成方法
WO2017169834A1 (ja) * 2016-03-31 2017-10-05 富士フイルム株式会社 半導体製造用処理液、及び、パターン形成方法
JPWO2017169834A1 (ja) * 2016-03-31 2019-01-31 富士フイルム株式会社 半導体製造用処理液、及び、パターン形成方法
US11256173B2 (en) 2016-03-31 2022-02-22 Fujifilm Corporation Treatment liquid for manufacturing semiconductor and pattern forming method
TWI761338B (zh) * 2016-03-31 2022-04-21 日商富士軟片股份有限公司 半導體製造用處理液及圖案形成方法
TWI820641B (zh) * 2016-03-31 2023-11-01 日商富士軟片股份有限公司 電子器件的製造方法
TWI870035B (zh) * 2016-03-31 2025-01-11 日商富士軟片股份有限公司 圖案形成方法及半導體器件的製造方法

Also Published As

Publication number Publication date
WO1997012281A1 (en) 1997-04-03
DE69605207D1 (de) 1999-12-23
CN1096628C (zh) 2002-12-18
DE69605207T2 (de) 2000-07-13
CN1196806A (zh) 1998-10-21
KR100470514B1 (ko) 2005-09-15
EP0852743B1 (en) 1999-11-17
TW515933B (en) 2003-01-01
KR19990063687A (ko) 1999-07-26
US5750031A (en) 1998-05-12
EP0852743A1 (en) 1998-07-15

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