JPH0444742B2 - - Google Patents

Info

Publication number
JPH0444742B2
JPH0444742B2 JP13503085A JP13503085A JPH0444742B2 JP H0444742 B2 JPH0444742 B2 JP H0444742B2 JP 13503085 A JP13503085 A JP 13503085A JP 13503085 A JP13503085 A JP 13503085A JP H0444742 B2 JPH0444742 B2 JP H0444742B2
Authority
JP
Japan
Prior art keywords
water
compound
photoresist
processing liquid
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13503085A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61292641A (ja
Inventor
Kunio Ito
Kimio Watabe
Masahiro Shiosaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanofi Aventis KK
Original Assignee
Hoechst Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Japan Ltd filed Critical Hoechst Japan Ltd
Priority to JP13503085A priority Critical patent/JPS61292641A/ja
Priority to AT85112572T priority patent/ATE58972T1/de
Priority to DE8585112572T priority patent/DE3580827D1/de
Priority to EP85112572A priority patent/EP0177905B1/de
Priority to KR1019850007406A priority patent/KR930010775B1/ko
Priority to CA000492431A priority patent/CA1257610A/en
Priority to US06/785,518 priority patent/US4729941A/en
Priority to ES547744A priority patent/ES8707068A1/es
Publication of JPS61292641A publication Critical patent/JPS61292641A/ja
Publication of JPH0444742B2 publication Critical patent/JPH0444742B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP13503085A 1984-10-09 1985-06-20 ホトレジスト用処理液 Granted JPS61292641A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP13503085A JPS61292641A (ja) 1985-06-20 1985-06-20 ホトレジスト用処理液
AT85112572T ATE58972T1 (de) 1984-10-09 1985-10-04 Verfahren zum entwickeln und zum entschichten von photoresistschichten mit quaternaeren ammomiumverbindungen.
DE8585112572T DE3580827D1 (de) 1984-10-09 1985-10-04 Verfahren zum entwickeln und zum entschichten von photoresistschichten mit quaternaeren ammomiumverbindungen.
EP85112572A EP0177905B1 (de) 1984-10-09 1985-10-04 Verfahren zum Entwickeln und zum Entschichten von Photoresistschichten mit quaternären Ammomiumverbindungen
KR1019850007406A KR930010775B1 (ko) 1984-10-09 1985-10-08 감광성내식막 처리액
CA000492431A CA1257610A (en) 1984-10-09 1985-10-08 Photoresist processing solution
US06/785,518 US4729941A (en) 1984-10-09 1985-10-08 Photoresist processing solution with quaternary ammonium hydroxide
ES547744A ES8707068A1 (es) 1985-06-20 1985-10-09 Un procedimiento para la preparacion de una serigrafia foto-protectora

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13503085A JPS61292641A (ja) 1985-06-20 1985-06-20 ホトレジスト用処理液

Publications (2)

Publication Number Publication Date
JPS61292641A JPS61292641A (ja) 1986-12-23
JPH0444742B2 true JPH0444742B2 (enExample) 1992-07-22

Family

ID=15142297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13503085A Granted JPS61292641A (ja) 1984-10-09 1985-06-20 ホトレジスト用処理液

Country Status (2)

Country Link
JP (1) JPS61292641A (enExample)
ES (1) ES8707068A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2591644B2 (ja) * 1987-03-11 1997-03-19 東京応化工業株式会社 ホトレジストの剥離液
JP2009069505A (ja) * 2007-09-13 2009-04-02 Tosoh Corp レジスト除去用洗浄液及び洗浄方法
JP6221939B2 (ja) * 2013-06-19 2017-11-01 信越化学工業株式会社 感光性レジスト材料用現像液及びこれを用いたパターン形成方法

Also Published As

Publication number Publication date
JPS61292641A (ja) 1986-12-23
ES547744A0 (es) 1987-07-01
ES8707068A1 (es) 1987-07-01

Similar Documents

Publication Publication Date Title
US5580700A (en) Metal ion reduction in bottom anti-reflective coatings for use in semiconductor device formation
US5521052A (en) Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
US5286606A (en) Process for producing a developer having a low metal ion level
US5962183A (en) Metal ion reduction in photoresist compositions by chelating ion exchange resin
JPH025060A (ja) レジストパターンを得る方法
WO1994014858A1 (en) Metal ion reduction in polyhydroxystyrene and photoresists
JPH07504762A (ja) 金属イオンレベルが低いフォトレジスト
WO1994001807A1 (en) Metal ion reduction in top anti-reflective coatings for photoresists
US5656413A (en) Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom
KR930010775B1 (ko) 감광성내식막 처리액
US5750031A (en) Process for producing surfactant having a low metal ion level and developer produced therefrom
JP3789138B2 (ja) 有機極性溶媒を含有するフォトレジスト組成物中の混入金属イオンをイオン交換により低減する方法
WO1996012214A1 (en) Low metal ion photoactive compounds and photoresists compositions produced therefrom
JP2002519192A (ja) イオン交換パックによる微量の金属イオンの低減方法
JPH0444742B2 (enExample)
KR20010040552A (ko) 입자를 생성하는 경향이 감소된 포토레지스트 조성물의제조 방법
JPH0446947B2 (enExample)
JPS63136041A (ja) レジスト現像液組成物
JPH04177353A (ja) ポジ型ホトレジスト組成物およびレジストパターンの製造法
JPH045378B2 (enExample)
JP3099528B2 (ja) ドライ現像用感放射線性樹脂組成物
JP2002501933A (ja) 光活性化合物を製造する方法及びそれからフォトレジストを製造する方法
WO1996012988A1 (en) Positive photosensitive composition
JPH05249678A (ja) 感放射線性樹脂組成物
JPS5978335A (ja) レジストの安定化方法