KR100413914B1 - 성막방법 - Google Patents

성막방법 Download PDF

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Publication number
KR100413914B1
KR100413914B1 KR1019950016167A KR19950016167A KR100413914B1 KR 100413914 B1 KR100413914 B1 KR 100413914B1 KR 1019950016167 A KR1019950016167 A KR 1019950016167A KR 19950016167 A KR19950016167 A KR 19950016167A KR 100413914 B1 KR100413914 B1 KR 100413914B1
Authority
KR
South Korea
Prior art keywords
gas
film
polysilicon film
crystal
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019950016167A
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English (en)
Korean (ko)
Other versions
KR960002526A (ko
Inventor
시시구치세이이치
하세베가즈히데
시게마츠노부아키
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR960002526A publication Critical patent/KR960002526A/ko
Application granted granted Critical
Publication of KR100413914B1 publication Critical patent/KR100413914B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/30—Diffusion for doping of conductive or resistive layers
    • H10P32/302—Doping polycrystalline silicon or amorphous silicon layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
KR1019950016167A 1994-06-17 1995-06-17 성막방법 Expired - Lifetime KR100413914B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15953294A JP3432601B2 (ja) 1994-06-17 1994-06-17 成膜方法
JP94-159532 1994-06-17

Publications (2)

Publication Number Publication Date
KR960002526A KR960002526A (ko) 1996-01-26
KR100413914B1 true KR100413914B1 (ko) 2004-03-30

Family

ID=15695832

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950016167A Expired - Lifetime KR100413914B1 (ko) 1994-06-17 1995-06-17 성막방법

Country Status (4)

Country Link
US (1) US5783257A (enExample)
JP (1) JP3432601B2 (enExample)
KR (1) KR100413914B1 (enExample)
TW (1) TW271504B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009134080A3 (ko) * 2008-05-02 2010-02-11 주식회사 유진테크 극미세 결정립 폴리 실리콘 박막 증착 방법
WO2009134083A3 (ko) * 2008-05-02 2010-03-04 주식회사 유진테크 극미세 결정립 폴리 실리콘 박막 증착 방법

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11260734A (ja) 1998-03-12 1999-09-24 Nec Corp 半導体装置の製造方法
JPH11288893A (ja) 1998-04-03 1999-10-19 Nec Corp 半導体製造装置及び半導体装置の製造方法
JP2000114250A (ja) * 1998-08-21 2000-04-21 Texas Instr Inc <Ti> 枚葉式反応器を使用した、インサイチュ・ド―ピングされたきめの粗い多結晶シリコンの製法
US6615615B2 (en) 2001-06-29 2003-09-09 Lightwave Microsystems Corporation GePSG core for a planar lightwave circuit
JP5311791B2 (ja) * 2007-10-12 2013-10-09 東京エレクトロン株式会社 ポリシリコン膜の形成方法
US8304033B2 (en) * 2009-02-04 2012-11-06 Tel Epion Inc. Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles
JPWO2014002353A1 (ja) * 2012-06-27 2016-05-30 パナソニックＩｐマネジメント株式会社 固体撮像素子及びその製造方法
JP7190875B2 (ja) * 2018-11-16 2022-12-16 東京エレクトロン株式会社 ポリシリコン膜の形成方法及び成膜装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900008716A (ko) * 1988-11-26 1990-06-03 삼성전자 주식회사 비정질 실리콘 태양전지
KR920008876A (ko) * 1990-10-16 1992-05-28 토자끼 시노부 Cvd실리콘 산화질화막의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441249A (en) * 1982-05-26 1984-04-10 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit capacitor
JPS6035746A (ja) * 1984-06-13 1985-02-23 Matsushita Electric Ind Co Ltd 電子写真感光体
JPH01268047A (ja) * 1988-04-19 1989-10-25 Nec Corp ポリシリコン抵抗の形成方法
JPH0376022A (ja) * 1989-08-18 1991-04-02 Konica Corp 磁気記録媒体
US5080933A (en) * 1990-09-04 1992-01-14 Motorola, Inc. Selective deposition of polycrystalline silicon
JPH053258A (ja) * 1990-09-25 1993-01-08 Kawasaki Steel Corp 層間絶縁膜の形成方法
US5159205A (en) * 1990-10-24 1992-10-27 Burr-Brown Corporation Timing generator circuit including adjustable tapped delay line within phase lock loop to control timing of signals in the tapped delay line
JPH06140324A (ja) * 1992-10-23 1994-05-20 Casio Comput Co Ltd 半導体薄膜の結晶化方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900008716A (ko) * 1988-11-26 1990-06-03 삼성전자 주식회사 비정질 실리콘 태양전지
KR920008876A (ko) * 1990-10-16 1992-05-28 토자끼 시노부 Cvd실리콘 산화질화막의 제조방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009134080A3 (ko) * 2008-05-02 2010-02-11 주식회사 유진테크 극미세 결정립 폴리 실리콘 박막 증착 방법
WO2009134083A3 (ko) * 2008-05-02 2010-03-04 주식회사 유진테크 극미세 결정립 폴리 실리콘 박막 증착 방법
KR101012103B1 (ko) * 2008-05-02 2011-02-07 주식회사 유진테크 극미세 결정립 폴리 실리콘 박막 증착 방법
KR101012102B1 (ko) * 2008-05-02 2011-02-07 주식회사 유진테크 극미세 결정립 폴리 실리콘 박막 증착 방법

Also Published As

Publication number Publication date
KR960002526A (ko) 1996-01-26
TW271504B (enExample) 1996-03-01
JP3432601B2 (ja) 2003-08-04
JPH088195A (ja) 1996-01-12
US5783257A (en) 1998-07-21

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