KR100413632B1 - 수소 플라즈마 및 급속 열처리의 이중 전처리 단계를포함하는 구리 전착방법 - Google Patents
수소 플라즈마 및 급속 열처리의 이중 전처리 단계를포함하는 구리 전착방법 Download PDFInfo
- Publication number
- KR100413632B1 KR100413632B1 KR10-2001-0044100A KR20010044100A KR100413632B1 KR 100413632 B1 KR100413632 B1 KR 100413632B1 KR 20010044100 A KR20010044100 A KR 20010044100A KR 100413632 B1 KR100413632 B1 KR 100413632B1
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- hydrogen plasma
- pretreatment
- conductive film
- film
- Prior art date
Links
- 239000001257 hydrogen Substances 0.000 title claims abstract description 69
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 69
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000009713 electroplating Methods 0.000 title claims abstract description 15
- 230000009977 dual effect Effects 0.000 title abstract description 6
- 238000004151 rapid thermal annealing Methods 0.000 title description 3
- 239000010949 copper Substances 0.000 claims abstract description 127
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 122
- 229910052802 copper Inorganic materials 0.000 claims abstract description 118
- 238000010438 heat treatment Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 238000004544 sputter deposition Methods 0.000 claims abstract description 17
- 238000004070 electrodeposition Methods 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000003870 refractory metal Substances 0.000 claims description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000010408 film Substances 0.000 description 83
- 239000010410 layer Substances 0.000 description 21
- 230000008569 process Effects 0.000 description 19
- 238000000151 deposition Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910002480 Cu-O Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910004200 TaSiN Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005324 grain boundary diffusion Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (8)
- a) p-type (100) Si 웨이퍼를 열처리하여 산화막을 형성하고, 스퍼터링(sputtering)법을 이용하여 확산방지막을 형성하는 단계;b) 상기 확산 방지막의 표면상에 스퍼터링(sputtering)법을 이용하여 구리 전도막(seed layer)을 형성하는 단계;c) 상기 구리 전도막을 포함한 기판을 rf-전원이 20 W ∼ 140 W 및 플라즈마 노출 시간이 1 분 ∼ 20 분의 조건에서 수소 플라즈마 전처리로 세정하는 단계;d) 상기 세정단계에 연속하여 상기 세정된 구리 전도막을 포함하는 기판을 350 ℃ ∼ 500 ℃ 에서, 30 초동안 급속 열처리하는 단계; 및e) 수소 플라즈마 및 급속 열처리의 이중 전처리된 상기 구리 전도막을 포함하는 기판 표면상에 펄스 전류를 이용하여 구리 전해도금하는 단계를 포함하는 구리 전착방법.
- 제 1 항에 있어서, 상기 확산 방지막이 내화금속의 질화물인 TaN을 증착하는 것을 특징으로 하는 구리 전착방법.
- 삭제
- 제 1 항에 있어서, 상기 수소 플라즈마 전처리가 rf-전원이 100 W 이고, 플라즈마 노출 시간이 10 분동안 처리된 것을 특징으로 하는 구리 전착방법.
- 삭제
- 제 1 항에 있어서, 상기 급속 열처리 전처리 단계가 350 ℃에서 30 초동안 처리된 것을 특징으로 하는 구리 전착방법.
- 제 1 항에 있어서, 상기 수소 플라즈마 전처리가 구리 전도막 표면의 불순물 또는 금속 산화물을 제거하는 것을 특징으로 하는 구리 전착방법.
- 제 7 항에 있어서, 상기 구리 전도막 표면의 불순물 또는 금속 산화물로는탄소, 산소 또는 구리-산소가 제거된 것을 특징으로 하는 구리 전착방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0044100A KR100413632B1 (ko) | 2001-07-23 | 2001-07-23 | 수소 플라즈마 및 급속 열처리의 이중 전처리 단계를포함하는 구리 전착방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0044100A KR100413632B1 (ko) | 2001-07-23 | 2001-07-23 | 수소 플라즈마 및 급속 열처리의 이중 전처리 단계를포함하는 구리 전착방법 |
Publications (2)
Publication Number | Publication Date |
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KR20030009593A KR20030009593A (ko) | 2003-02-05 |
KR100413632B1 true KR100413632B1 (ko) | 2003-12-31 |
Family
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Family Applications (1)
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KR10-2001-0044100A KR100413632B1 (ko) | 2001-07-23 | 2001-07-23 | 수소 플라즈마 및 급속 열처리의 이중 전처리 단계를포함하는 구리 전착방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100413632B1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101064144B1 (ko) | 2006-08-10 | 2011-09-15 | 울박, 인크 | 도전막 형성 방법, 박막 트랜지스터, 박막 트랜지스터를 갖는 패널 및 박막 트랜지스터의 제조 방법 |
KR101067364B1 (ko) | 2006-10-12 | 2011-09-23 | 울박, 인크 | 도전막 형성 방법, 박막 트랜지스터, 박막 트랜지스터를 갖는 패널 및 박막 트랜지스터의 제조 방법 |
KR102200031B1 (ko) | 2019-08-27 | 2021-01-07 | 부산대학교 산학협력단 | 산화은 촉매의 산소 환원 반응 활성도 측정 방법 |
KR102216922B1 (ko) | 2020-10-21 | 2021-02-17 | 부산대학교 산학협력단 | 산소 및 이산화탄소 환원용 금속 촉매의 제조방법 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100804496B1 (ko) * | 2006-04-12 | 2008-02-20 | 재단법인서울대학교산학협력재단 | 나노 전해도금법을 이용한 수지상 구조의 구리 팁의형성방법 및 이를 이용한 탄소나노화이버 및탄소나노코일의 형성방법 |
KR101294748B1 (ko) * | 2006-12-11 | 2013-08-08 | 엘지디스플레이 주식회사 | 구리막 형성방법 |
WO2008140248A1 (en) * | 2007-05-14 | 2008-11-20 | Nest Corp. | Method for removing photoresist and contaminants |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6319728B1 (en) * | 1998-06-05 | 2001-11-20 | Applied Materials, Inc. | Method for treating a deposited film for resistivity reduction |
KR20020000237A (ko) * | 2000-06-20 | 2002-01-05 | 박종섭 | 반도체 소자의 금속 배선 형성방법 |
KR20020000464A (ko) * | 2000-06-26 | 2002-01-05 | 박종섭 | 반도체 소자의 금속 배선 형성 방법 |
KR20020054662A (ko) * | 2000-12-28 | 2002-07-08 | 박종섭 | 반도체소자의 금속배선 형성방법 |
-
2001
- 2001-07-23 KR KR10-2001-0044100A patent/KR100413632B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6319728B1 (en) * | 1998-06-05 | 2001-11-20 | Applied Materials, Inc. | Method for treating a deposited film for resistivity reduction |
KR20020000237A (ko) * | 2000-06-20 | 2002-01-05 | 박종섭 | 반도체 소자의 금속 배선 형성방법 |
KR20020000464A (ko) * | 2000-06-26 | 2002-01-05 | 박종섭 | 반도체 소자의 금속 배선 형성 방법 |
KR20020054662A (ko) * | 2000-12-28 | 2002-07-08 | 박종섭 | 반도체소자의 금속배선 형성방법 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101064144B1 (ko) | 2006-08-10 | 2011-09-15 | 울박, 인크 | 도전막 형성 방법, 박막 트랜지스터, 박막 트랜지스터를 갖는 패널 및 박막 트랜지스터의 제조 방법 |
KR101067364B1 (ko) | 2006-10-12 | 2011-09-23 | 울박, 인크 | 도전막 형성 방법, 박막 트랜지스터, 박막 트랜지스터를 갖는 패널 및 박막 트랜지스터의 제조 방법 |
KR102200031B1 (ko) | 2019-08-27 | 2021-01-07 | 부산대학교 산학협력단 | 산화은 촉매의 산소 환원 반응 활성도 측정 방법 |
KR102216922B1 (ko) | 2020-10-21 | 2021-02-17 | 부산대학교 산학협력단 | 산소 및 이산화탄소 환원용 금속 촉매의 제조방법 |
Also Published As
Publication number | Publication date |
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KR20030009593A (ko) | 2003-02-05 |
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