WO2008140248A1 - Method for removing photoresist and contaminants - Google Patents

Method for removing photoresist and contaminants Download PDF

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Publication number
WO2008140248A1
WO2008140248A1 PCT/KR2008/002673 KR2008002673W WO2008140248A1 WO 2008140248 A1 WO2008140248 A1 WO 2008140248A1 KR 2008002673 W KR2008002673 W KR 2008002673W WO 2008140248 A1 WO2008140248 A1 WO 2008140248A1
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WO
WIPO (PCT)
Prior art keywords
chemical solution
target substance
pulsed plasma
dilution
solution
Prior art date
Application number
PCT/KR2008/002673
Other languages
French (fr)
Inventor
Young Kim
Original Assignee
Nest Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nest Corp. filed Critical Nest Corp.
Publication of WO2008140248A1 publication Critical patent/WO2008140248A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Definitions

  • the present invention relates to a semiconductor manufacturing method, and more particularly to a method for removing PR (PhotoResist) or contaminants at the time of semiconductor manufacturing.
  • PR PhotoResist
  • Photoresist materials are employed in a plasma process or the like for patterning in a semiconductor manufacturing process.
  • a commercially available photoresist is a mixture of a polymer material, an inorganic and/or an organic material. If a photoresist layer is coated on a substrate, and radiation is illuminated through a patterned mask, the pattern in the mask is transferred to the resist layer.
  • Such a photoresist is classified into a negative-working resist and a positive-working resist, wherein the former forms a negative image and the latter forms a positive image. After development, the pattern is present on the photoresist layer. It is possible to define one or more features on the substrate through etching as well as to deposit or implant a material on or in a substrate.
  • the present invention has been made to solve the above-mentioned problems occurring in the prior art, and the present invention is to provide a method of removing PR (PhotoResist) and contaminants, which enables faster and improved cleaning, using an existing single-wafer wet cleaning PR stripper.
  • the present invention is intended to enable faster PR removal with a single- wafer wet cleaning PR stripper by using pulsed plasma and a chemical solution, to improve the method of removing organic contaminants at the time of cleaning, and to accelerate a chemical reaction by directly applying pulsed plasma to the chemical solution. Consequently, the present invention is intended to increase the PR removal rate by 3 to 4 times than the conventional technologies, and to render organic contaminants clearly removed, even from deep and narrow trench structures.
  • a method for removing PR and contaminants including the steps of: preparing a corresponding member with target substance to be removed; preparing a chemical solution for removing the target substance; diluting the chemical solution with a dilution solution, thereby forming a diluted chemical solution; and immersing the corresponding member in the diluted chemical solution.
  • the chemical solution may be a PR stripper, and the dilution rate of the diluted chemical solution may be in the range of 20% ⁇ 40%, and the dilution solution may be DI (Delonized) water.
  • the target substance may be a photoresist, or organic or inorganic contaminants.
  • a method for removing PR or contaminants including the steps of: preparing a corresponding member with a target substance to be removed; preparing a chemical solution for removing the target substance; diluting the chemical solution with a dilution solution, thereby forming a diluted chemical solution; immersing the corresponding member in the diluted chemical solution; and applying pulsed plasma to the diluted chemical solution, thereby selectively removing the target substance.
  • the chemical solution may be a PR stripper, which includes
  • the dilution rate of the diluted chemical solution may be varied in the range of 0-50%, preferably 20% -40%, the dilution solution may be DI (Delonized) water.
  • the pulsed plasma may consist of Ar.
  • the power of the pulsed plasma may be about 8 kV in peak-to-peak voltage, and the pulse frequency of the pulsed plasma may be controlled in the range of about 10-100 KHz.
  • the pulsed plasma is applied preferably within a time period of 15 minutes.
  • the target substance may be a PR (photoresist), or organic or inorganic contaminants.
  • FIG. 1 shows PR removal rate as a function of dilution rate of a PR stripper and a dilution solution, without applying pulsed plasma according to the present invention
  • FIG. 2 shows PR removal rate as a function of dilution rate of a PR stripper and a dilution solution while pulsed plasma is being applied according to the present invention
  • FIG. 3 shows the total removal time as a function of time for applying pulsed plasma according to the present invention.
  • FIG. 4 shows PR removal rate as a function of time for applying pulsed plasma according to the present invention.
  • a PR (AZ 3514) was coated on a silicon substrate after cleaning the silicon substrate with HF solution.
  • the thickness of the PR was about 14,000 A, and was hard-baked.
  • PR coated samples were loaded into a chamber and exposed to a PR stripper and Ar pulsed plasma.
  • the power of the pulsed plasma was about 8 kV in peak-to-peak voltage, and the pulse frequency of the pulsed plasma was capable of being controlled in the range of about 10 to 100 kHz.
  • the PR stripper was diluted with various dilution ratios.
  • While removing the PR the remaining PR was measured by a spectra-thick method and a ⁇ -ray backscattering spectrometry method so as to determine the effect of the inventive method.
  • FIG. 1 shows the PR removal rate as a function of dilution rate. In the case of 100%
  • FIG. 2 shows the PR removal rate as a function of dilution ratio while applying pulsed plasma.
  • the PR removal rate was 539 A/s, which was substantially faster than 400 A/s of the 100% PR stripper in the normal condition without applying the pulsed plasma. This means that the pulsed plasma enabled the PR stripper to react with the PR (PhotoResist) more actively than in the normal condition in which pulsed plasma is not applied.
  • the PR removal ratio was also increased from 583 A/s to 667 A/s, which exhibited a very remarkable effect as compared to the case in which the pulsed plasma was not applied. This means that the chemical reaction of the PR stripper was greatly facilitated by the pulsed plasma.
  • the pulsed plasma will also accelerate the removal of organic contaminants on a silicon surface.
  • the total PR removal time was measured as a function of pulsed plasma applying time, as shown in FIG. 3. Referring to FIG. 3, it can be appreciated that the total PR removal time is shortened as the pulsed plasma applying time increases.
  • the interesting point in the present invention is that the PR removal time becomes faster as the dilution ratio is increased from 0 to 50% and the pulsed plasma applying time is also increased. Compared with the 100% PR stripper, the total PR removal time was drastically shortened from 29 sec to 13 sec. [37] However, when the pulsed plasma applying time was increased up to 20 min, the PR removal time was increased. From this, it will be understood that the pulsed plasma plays a role to activate the reaction of chemical solution within a certain period of time.
  • the reactivity of a chemical solution may be deteriorated by an improper PR removal time.
  • the reactivity of PR stripper will be more active when a dilution solution is somewhat added to the PR stripper rather than when only the PR stripper is used.
  • FIG. 4 shows a view for describing the PR removal rate as a function of the pulsed plasma applying time.
  • the PR removal rate is controlled by the concentration rate of the PR stripper. If the PR stripper is diluted to such an extent that the reactivity is reduced, the PR removal rate will also be reduced.
  • the PR removal rate can be increased using pulsed plasma with the dilution of wet cleaning solution.
  • the PR removal rate is increased, depending on the dilution rate and the pulsed plasma application time.
  • chemical solution also referred to as wet cleaning solution and PR stripper
  • the chemical solution is diluted by DI water, forming diluted chemical solution.
  • the present invention shows the acceleration effect of pulsed plasma on the reactivity of chemical solution, wherein the effect will be useful for removing organic contaminants from a silicon surface very quickly and effectively.

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

Disclosed is a method of removing photoresist and contaminants at the time of semiconductor manufacturing. The inventive method includes the steps of: preparing a corresponding member with a target substance to be removed; preparing a chemical solution for removing the target substance; diluting the chemical solution with dilution solution, thereby forming a diluted chemical solution; immersing the corresponding member in the diluted chemical solution; and applying pulsed plasma to the diluted chemical solution to selectively remove the target substance. According to the present invention, throughput for removing photoresist, organic or inorganic contaminants can be significantly enhanced as compared to the prior art.

Description

Description
METHOD FOR REMOVING PHOTORESIST AND CONTAMINANTS
Technical Field
[1] The present invention relates to a semiconductor manufacturing method, and more particularly to a method for removing PR (PhotoResist) or contaminants at the time of semiconductor manufacturing. Background Art
[2] Photoresist materials are employed in a plasma process or the like for patterning in a semiconductor manufacturing process. A commercially available photoresist is a mixture of a polymer material, an inorganic and/or an organic material. If a photoresist layer is coated on a substrate, and radiation is illuminated through a patterned mask, the pattern in the mask is transferred to the resist layer. Such a photoresist is classified into a negative-working resist and a positive-working resist, wherein the former forms a negative image and the latter forms a positive image. After development, the pattern is present on the photoresist layer. It is possible to define one or more features on the substrate through etching as well as to deposit or implant a material on or in a substrate.
[3] For next generation ULSI (Ultra-Large Scale Integration) circuit components, preparation of ultra clean silicon surfaces requires a breakthrough in etching and cleaning processes. Especially, in a semiconductor process, it is very difficult to remove particles in deep via holes with a width below 45 nm.
[4] As the impurity size decreases, organic or inorganic contaminants on a silicon wafer are more fatal to semiconductor devices in a patterning process.
[5] A method for removing organic or inorganic contaminants based on simultaneous exposure of etched and cleaned surfaces has been studied by several researchers. They have observed the rate of attack on inorganic contaminants by reactive vapor radicals produced from an etching solution.
[6] Although a single- wafer wet cleaning PR stripper has been developed and used until now, the PR stripper is inefficient due to its slow cleaning effect, which negatively affects productivity.
[7] Consequently, in order to manufacture the next generation ULSI circuit components, what is needed is a new cleaning technology capable of removing PR more quickly and completely than existing single- wafer wet cleaning technologies. Disclosure of Invention Technical Solution [8] Accordingly, the present invention has been made to solve the above-mentioned problems occurring in the prior art, and the present invention is to provide a method of removing PR (PhotoResist) and contaminants, which enables faster and improved cleaning, using an existing single-wafer wet cleaning PR stripper.
[9] More specifically, the present invention is intended to enable faster PR removal with a single- wafer wet cleaning PR stripper by using pulsed plasma and a chemical solution, to improve the method of removing organic contaminants at the time of cleaning, and to accelerate a chemical reaction by directly applying pulsed plasma to the chemical solution. Consequently, the present invention is intended to increase the PR removal rate by 3 to 4 times than the conventional technologies, and to render organic contaminants clearly removed, even from deep and narrow trench structures.
[10] In order to accomplish the above-mentioned objects, according to a first aspect of the present invention, there is provided a method for removing PR and contaminants including the steps of: preparing a corresponding member with target substance to be removed; preparing a chemical solution for removing the target substance; diluting the chemical solution with a dilution solution, thereby forming a diluted chemical solution; and immersing the corresponding member in the diluted chemical solution.
[11] In the first aspect, the chemical solution may be a PR stripper, and the dilution rate of the diluted chemical solution may be in the range of 20%~40%, and the dilution solution may be DI (Delonized) water. In addition, the target substance may be a photoresist, or organic or inorganic contaminants.
[12] According to a second aspect of the present invention, there is provided a method for removing PR or contaminants including the steps of: preparing a corresponding member with a target substance to be removed; preparing a chemical solution for removing the target substance; diluting the chemical solution with a dilution solution, thereby forming a diluted chemical solution; immersing the corresponding member in the diluted chemical solution; and applying pulsed plasma to the diluted chemical solution, thereby selectively removing the target substance.
[13] In the second aspect, the chemical solution may be a PR stripper, which includes
HCl, HF and H2SO4, the dilution rate of the diluted chemical solution may be varied in the range of 0-50%, preferably 20% -40%, the dilution solution may be DI (Delonized) water. The pulsed plasma may consist of Ar. The power of the pulsed plasma may be about 8 kV in peak-to-peak voltage, and the pulse frequency of the pulsed plasma may be controlled in the range of about 10-100 KHz. The pulsed plasma is applied preferably within a time period of 15 minutes. In addition, the target substance may be a PR (photoresist), or organic or inorganic contaminants. Brief Description of the Drawings [14] The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which:
[15] FIG. 1 shows PR removal rate as a function of dilution rate of a PR stripper and a dilution solution, without applying pulsed plasma according to the present invention;
[16] FIG. 2 shows PR removal rate as a function of dilution rate of a PR stripper and a dilution solution while pulsed plasma is being applied according to the present invention;
[17] FIG. 3 shows the total removal time as a function of time for applying pulsed plasma according to the present invention; and
[18] FIG. 4 shows PR removal rate as a function of time for applying pulsed plasma according to the present invention. Mode for the Invention
[19] Hereinafter, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. In the following description and drawings, the same reference numerals are used to designate the same or similar components. In addition, in the following description, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
[20]
[21] Experiment for the inventive method for removing PR or contaminants
[22] In order to determine the effect of pulsed plasma acceleration on the removal rate of organic contaminants on a silicon surface, a PR (AZ 3514) was coated on a silicon substrate after cleaning the silicon substrate with HF solution. The thickness of the PR was about 14,000 A, and was hard-baked. [23] PR coated samples were loaded into a chamber and exposed to a PR stripper and Ar pulsed plasma. The power of the pulsed plasma was about 8 kV in peak-to-peak voltage, and the pulse frequency of the pulsed plasma was capable of being controlled in the range of about 10 to 100 kHz. The PR stripper was diluted with various dilution ratios. [24] While removing the PR, the remaining PR was measured by a spectra-thick method and a β-ray backscattering spectrometry method so as to determine the effect of the inventive method. [25]
[26] Result I
[27] The PR removal rate was measured while varying the dilution rate of PR stripper and dilution solution without applying pulsed plasma. [28] FIG. 1 shows the PR removal rate as a function of dilution rate. In the case of 100%
PR stripper, the removal rate was 400 A/s. When the PR stripper was diluted by 25%, the PR removal rate was 519 A/s, which was the maximum. As the dilution rate increases up to 50%, the PR removal rate was relatively decreased to 483 A/s, which might be due to the lack of active chemical species. Comparing these results, it is easy to find how the dilution ratio of the PR stripper and the DI water improves the PR removal rate. [29] FIG. 2 shows the PR removal rate as a function of dilution ratio while applying pulsed plasma. In the case of 100% PR stripper, the PR removal rate was 539 A/s, which was substantially faster than 400 A/s of the 100% PR stripper in the normal condition without applying the pulsed plasma. This means that the pulsed plasma enabled the PR stripper to react with the PR (PhotoResist) more actively than in the normal condition in which pulsed plasma is not applied.
[30]
[31] Result II
[32] As the dilution ratio was increased from 25% to 50%, the PR removal ratio was also increased from 583 A/s to 667 A/s, which exhibited a very remarkable effect as compared to the case in which the pulsed plasma was not applied. This means that the chemical reaction of the PR stripper was greatly facilitated by the pulsed plasma.
Therefore, it is expected that the pulsed plasma will also accelerate the removal of organic contaminants on a silicon surface. [33] In order to determine how much the reaction rate is increased by pulsed plasma, the total PR removal time was measured as a function of pulsed plasma applying time, as shown in FIG. 3. Referring to FIG. 3, it can be appreciated that the total PR removal time is shortened as the pulsed plasma applying time increases. [34]
[35] Result III
[36] The interesting point in the present invention is that the PR removal time becomes faster as the dilution ratio is increased from 0 to 50% and the pulsed plasma applying time is also increased. Compared with the 100% PR stripper, the total PR removal time was drastically shortened from 29 sec to 13 sec. [37] However, when the pulsed plasma applying time was increased up to 20 min, the PR removal time was increased. From this, it will be understood that the pulsed plasma plays a role to activate the reaction of chemical solution within a certain period of time.
That is, the reactivity of a chemical solution may be deteriorated by an improper PR removal time. [38] In particular, the reactivity of PR stripper will be more active when a dilution solution is somewhat added to the PR stripper rather than when only the PR stripper is used.
[39]
[40] Result IV
[41] Still, it is unknown how the dilution influences the fast PR removal, and why the extension of reactivity of a chemical solution is limited when the pulsed plasma is applied.
[42] FIG. 4 shows a view for describing the PR removal rate as a function of the pulsed plasma applying time.
[43] In the region I, the PR removal rate is controlled by the concentration rate of the PR stripper. If the PR stripper is diluted to such an extent that the reactivity is reduced, the PR removal rate will also be reduced.
[44] In the region II, the reactivity of the PR stripper was dramatically accelerated, even if the PR stripper was diluted by 50%, and the removal rate was increased with the dilution ratio. From this, it can be appreciated that the reactivity of the PR stripper is significantly activated by the pulsed plasma and the dilution solution.
[45] Of course, although it is still unknown why the PR removal rate was increased by dilution, it is obvious that the effect of pulsed plasma is more dominant than the effect of dilution because the dilution reduces the removal rate under the normal condition when pulsed plasma is not applied.
[46] In the region III, if the pulsed plasma is maintained, the PR removal process may be deteriorated due to an improper reaction time. However, it can be appreciated that the removal rate is fairly higher than that in the normal condition.
[47] As described above, according to the present invention, the PR removal rate can be increased using pulsed plasma with the dilution of wet cleaning solution. According to the present invention, the PR removal rate is increased, depending on the dilution rate and the pulsed plasma application time. According to the plasma, chemical solution (also referred to as wet cleaning solution and PR stripper) for removing PR includes HCl, HF and H2SO4. The chemical solution is diluted by DI water, forming diluted chemical solution.
[48] The present invention shows the acceleration effect of pulsed plasma on the reactivity of chemical solution, wherein the effect will be useful for removing organic contaminants from a silicon surface very quickly and effectively.
[49] Although the present invention is described above in terms of the removal of organic contaminants, inorganic contaminants can be effectively removed if the condition of pulsed plasma is properly controlled, or if other kinds of plasma gases or chemical solutions are employed.
[50] Although a preferred embodiment of the present invention has been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. Industrial Applicability
[51] As described above, according to the present invention, throughput for removing photoresist, organic or inorganic contaminants can be enhanced significantly as compared to the prior art.

Claims

Claims
[I] A method of removing photoresist and contaminants comprising the steps of: preparing a corresponding member with a target substance to be removed; *preparing a chemical solution for removing the target substance; diluting the chemical solution with dilution solution, thereby forming a diluted chemical solution; and immersing the corresponding member in the diluted chemical solution so as to remove the target substance. [2] The method as claimed in claim 1, wherein the chemical solution is a PR
(PhotoResist) stripper. [3] The method as claimed in claim 1, wherein the dilution rate of the diluted chemical solution is in the range of 20% to 40%. [4] The method as claimed in claim 1, wherein the dilution solution is DI
(Delonized) water. [5] The method as claimed in claim 1, wherein the target substance is a PR
(PhotoResist). [6] The method as claimed in claim 1, wherein the target substance is an organic contaminant. [7] The method as claimed in claim 1, wherein the target substance is an inorganic contaminant. [8] A method of removing photoresist and contaminants comprising the steps of: preparing a corresponding member with a target substance to be removed; preparing a chemical solution for removing the target substance; diluting the chemical solution with dilution solution, thereby forming a diluted chemical solution; immersing the corresponding member in the diluted chemical solution; and applying pulsed plasma to the diluted chemical solution to selectively remove the target substance. [9] The method as claimed in claim 8, wherein the chemical solution is a PR
(PhotoResist) stripper. [10] The method as claimed in claim 9, wherein the chemical solution includes HCl,
HF and H SO .
2 4
[I I] The method as claimed in claim 9, wherein the dilution rate of the diluted chemical solution is in the range of 20% to 40%.
[12] The method as claimed in claim 8, wherein the dilution solution is DI
(Delonized) water. [13] The method as claimed in claim 8, wherein the pulsed plasma consists of Ar. [14] The method as claimed in claim 8, wherein the power of the pulsed plasma is 8 kV in peak-to-peak voltage, and the pulse frequency is controlled within the range of 10 to 100 kHz. [15] The method as claimed in claim 8, wherein the pulsed plasma is applied within
15 minutes.
[16] The method as claimed in claim 8, wherein the target substance is a photoresist.
[17] The method as claimed in claim 8, wherein the target substance is an organic contaminant. [18] The method as claimed in claim 8, wherein the target substance is an inorganic contaminant.
PCT/KR2008/002673 2007-05-14 2008-05-14 Method for removing photoresist and contaminants WO2008140248A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20070046552 2007-05-14
KR10-2007-0046552 2007-05-14

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06314679A (en) * 1993-04-30 1994-11-08 Sony Corp Cleaning method of semiconductor substrate
KR20030009593A (en) * 2001-07-23 2003-02-05 학교법인 인하학원 The Method of Cu Electroplating Using Dual Pretreatment of Hydrogen Plasma/Rapid Thermal Annealing
KR20040060568A (en) * 2002-12-30 2004-07-06 주식회사 하이닉스반도체 Method for removing a growth particle on the photo-mask
US7053002B2 (en) * 1998-12-04 2006-05-30 Applied Materials, Inc Plasma preclean with argon, helium, and hydrogen gases

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06314679A (en) * 1993-04-30 1994-11-08 Sony Corp Cleaning method of semiconductor substrate
US7053002B2 (en) * 1998-12-04 2006-05-30 Applied Materials, Inc Plasma preclean with argon, helium, and hydrogen gases
KR20030009593A (en) * 2001-07-23 2003-02-05 학교법인 인하학원 The Method of Cu Electroplating Using Dual Pretreatment of Hydrogen Plasma/Rapid Thermal Annealing
KR20040060568A (en) * 2002-12-30 2004-07-06 주식회사 하이닉스반도체 Method for removing a growth particle on the photo-mask

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