KR100367110B1 - 자기 바이어스 로드를 갖는 가변 지연 셀 - Google Patents

자기 바이어스 로드를 갖는 가변 지연 셀 Download PDF

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Publication number
KR100367110B1
KR100367110B1 KR10-2000-7007725A KR20007007725A KR100367110B1 KR 100367110 B1 KR100367110 B1 KR 100367110B1 KR 20007007725 A KR20007007725 A KR 20007007725A KR 100367110 B1 KR100367110 B1 KR 100367110B1
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KR
South Korea
Prior art keywords
current
active side
transistors
inactive
load
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2000-7007725A
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English (en)
Korean (ko)
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KR20010034112A (ko
Inventor
존슨루크에이
피스커스티모씨이
Original Assignee
인텔 코오퍼레이션
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Publication of KR20010034112A publication Critical patent/KR20010034112A/ko
Application granted granted Critical
Publication of KR100367110B1 publication Critical patent/KR100367110B1/ko
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H03K5/133—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active delay devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/26—Time-delay networks
    • H03H11/265—Time-delay networks with adjustable delay
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0231—Astable circuits

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Pulse Circuits (AREA)
  • Amplifiers (AREA)
  • Networks Using Active Elements (AREA)
KR10-2000-7007725A 1998-01-14 1999-01-05 자기 바이어스 로드를 갖는 가변 지연 셀 Expired - Fee Related KR100367110B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/006,649 1998-01-14
US09/006,649 US5994939A (en) 1998-01-14 1998-01-14 Variable delay cell with a self-biasing load

Publications (2)

Publication Number Publication Date
KR20010034112A KR20010034112A (ko) 2001-04-25
KR100367110B1 true KR100367110B1 (ko) 2003-01-09

Family

ID=21721936

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-7007725A Expired - Fee Related KR100367110B1 (ko) 1998-01-14 1999-01-05 자기 바이어스 로드를 갖는 가변 지연 셀

Country Status (8)

Country Link
US (1) US5994939A (enExample)
EP (1) EP1048108B1 (enExample)
JP (1) JP4188562B2 (enExample)
KR (1) KR100367110B1 (enExample)
AU (1) AU2105599A (enExample)
DE (1) DE69938584T2 (enExample)
TW (1) TW437158B (enExample)
WO (1) WO1999037024A1 (enExample)

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US7598788B2 (en) * 2005-09-06 2009-10-06 Broadcom Corporation Current-controlled CMOS (C3MOS) fully differential integrated delay cell with variable delay and high bandwidth
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US7656226B2 (en) * 2006-03-31 2010-02-02 Intel Corporation Switched capacitor equalizer with offset voltage cancelling
US7649388B2 (en) * 2006-03-31 2010-01-19 Intel Corporation Analog voltage recovery circuit
US7429882B2 (en) * 2006-06-08 2008-09-30 Toshiba America Electronic Components, Inc. AC-DC input buffer
KR100859837B1 (ko) 2007-05-16 2008-09-23 주식회사 하이닉스반도체 지연 셀과 그를 이용한 위상 고정 루프
US7961026B2 (en) 2007-03-31 2011-06-14 Hynix Semiconductor Inc. Delay cell and phase locked loop using the same
US8516025B2 (en) 2007-04-17 2013-08-20 Cypress Semiconductor Corporation Clock driven dynamic datapath chaining
US9564902B2 (en) 2007-04-17 2017-02-07 Cypress Semiconductor Corporation Dynamically configurable and re-configurable data path
US8092083B2 (en) 2007-04-17 2012-01-10 Cypress Semiconductor Corporation Temperature sensor with digital bandgap
US8040266B2 (en) 2007-04-17 2011-10-18 Cypress Semiconductor Corporation Programmable sigma-delta analog-to-digital converter
US7737724B2 (en) 2007-04-17 2010-06-15 Cypress Semiconductor Corporation Universal digital block interconnection and channel routing
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US8026739B2 (en) 2007-04-17 2011-09-27 Cypress Semiconductor Corporation System level interconnect with programmable switching
US9720805B1 (en) 2007-04-25 2017-08-01 Cypress Semiconductor Corporation System and method for controlling a target device
US8065653B1 (en) 2007-04-25 2011-11-22 Cypress Semiconductor Corporation Configuration of programmable IC design elements
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TWI828875B (zh) 2020-03-11 2024-01-11 聯華電子股份有限公司 延遲單元
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Also Published As

Publication number Publication date
JP2002510155A (ja) 2002-04-02
US5994939A (en) 1999-11-30
DE69938584T2 (de) 2009-02-26
EP1048108A1 (en) 2000-11-02
EP1048108A4 (en) 2002-04-10
TW437158B (en) 2001-05-28
KR20010034112A (ko) 2001-04-25
EP1048108B1 (en) 2008-04-23
JP4188562B2 (ja) 2008-11-26
AU2105599A (en) 1999-08-02
WO1999037024A1 (en) 1999-07-22
DE69938584D1 (de) 2008-06-05

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