KR100363695B1 - 유기난반사방지중합체및그의제조방법 - Google Patents

유기난반사방지중합체및그의제조방법 Download PDF

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Publication number
KR100363695B1
KR100363695B1 KR10-1998-0063695A KR19980063695A KR100363695B1 KR 100363695 B1 KR100363695 B1 KR 100363695B1 KR 19980063695 A KR19980063695 A KR 19980063695A KR 100363695 B1 KR100363695 B1 KR 100363695B1
Authority
KR
South Korea
Prior art keywords
formula
group
polymer
antireflection film
hydroxy
Prior art date
Application number
KR10-1998-0063695A
Other languages
English (en)
Korean (ko)
Other versions
KR20010016643A (ko
Inventor
홍성은
정민호
김형수
백기호
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR10-1998-0063695A priority Critical patent/KR100363695B1/ko
Priority to GB9917218A priority patent/GB2345289B/en
Priority to FR9909924A priority patent/FR2788060B1/fr
Priority to NL1012840A priority patent/NL1012840C2/nl
Priority to DE19940320A priority patent/DE19940320B4/de
Priority to TW088116247A priority patent/TWI227259B/zh
Priority to US09/413,679 priority patent/US6350818B1/en
Priority to JP28983199A priority patent/JP4253088B2/ja
Priority to IT1999TO001027A priority patent/IT1308658B1/it
Priority to CNB991249739A priority patent/CN1166704C/zh
Publication of KR20010016643A publication Critical patent/KR20010016643A/ko
Priority to US10/015,333 priority patent/US6492441B2/en
Application granted granted Critical
Publication of KR100363695B1 publication Critical patent/KR100363695B1/ko
Priority to JP2007042141A priority patent/JP2007231270A/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/34—Introducing sulfur atoms or sulfur-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/16—Halogens
    • C08F212/20—Fluorine
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
KR10-1998-0063695A 1998-12-31 1998-12-31 유기난반사방지중합체및그의제조방법 KR100363695B1 (ko)

Priority Applications (12)

Application Number Priority Date Filing Date Title
KR10-1998-0063695A KR100363695B1 (ko) 1998-12-31 1998-12-31 유기난반사방지중합체및그의제조방법
GB9917218A GB2345289B (en) 1998-12-31 1999-07-23 Diazonaphthoquinonesulfonyl substituted polymers
FR9909924A FR2788060B1 (fr) 1998-12-31 1999-07-30 Polymere de revetement anti-reflecteur et procede de preparation
NL1012840A NL1012840C2 (nl) 1998-12-31 1999-08-17 Polymeren om te worden toegepast in antireflectiedeklagen en werkwijzen ter bereiding hiervan.
DE19940320A DE19940320B4 (de) 1998-12-31 1999-08-25 Nicht reflektierende Beschichtungspolymere und Verfahren zu deren Herstellung
TW088116247A TWI227259B (en) 1998-12-31 1999-09-22 Anti-reflective coating polymers and the preparation method thereof
US09/413,679 US6350818B1 (en) 1998-12-31 1999-10-07 Anti reflective coating polymers and the preparation method thereof
JP28983199A JP4253088B2 (ja) 1998-12-31 1999-10-12 反射防止膜組成物およびその準備方法、ならびに反射防止膜およびその形成方法
IT1999TO001027A IT1308658B1 (it) 1998-12-31 1999-11-24 Polimeri per rivestimenti anti-riflettenti e procedimento per la loropreparazione.
CNB991249739A CN1166704C (zh) 1998-12-31 1999-12-23 防反射性涂料聚合物及其制备方法
US10/015,333 US6492441B2 (en) 1998-12-31 2001-12-11 Anti reflective coating polymers and the preparation method thereof
JP2007042141A JP2007231270A (ja) 1998-12-31 2007-02-22 有機反射防止膜用重合体、その製造方法および半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-1998-0063695A KR100363695B1 (ko) 1998-12-31 1998-12-31 유기난반사방지중합체및그의제조방법

Publications (2)

Publication Number Publication Date
KR20010016643A KR20010016643A (ko) 2001-03-05
KR100363695B1 true KR100363695B1 (ko) 2003-04-11

Family

ID=19570257

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0063695A KR100363695B1 (ko) 1998-12-31 1998-12-31 유기난반사방지중합체및그의제조방법

Country Status (10)

Country Link
US (2) US6350818B1 (US06350818-20020226-C00017.png)
JP (2) JP4253088B2 (US06350818-20020226-C00017.png)
KR (1) KR100363695B1 (US06350818-20020226-C00017.png)
CN (1) CN1166704C (US06350818-20020226-C00017.png)
DE (1) DE19940320B4 (US06350818-20020226-C00017.png)
FR (1) FR2788060B1 (US06350818-20020226-C00017.png)
GB (1) GB2345289B (US06350818-20020226-C00017.png)
IT (1) IT1308658B1 (US06350818-20020226-C00017.png)
NL (1) NL1012840C2 (US06350818-20020226-C00017.png)
TW (1) TWI227259B (US06350818-20020226-C00017.png)

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KR100465866B1 (ko) * 2001-10-26 2005-01-13 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
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US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
JP4952906B2 (ja) * 2006-11-15 2012-06-13 ソニーケミカル＆インフォメーションデバイス株式会社 封止樹脂組成物及び発光素子
US8642246B2 (en) * 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP5099140B2 (ja) * 2007-08-24 2012-12-12 東レ株式会社 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子
CN101971102B (zh) 2008-01-29 2012-12-12 布鲁尔科技公司 用来通过多次暗视场曝光对硬掩模进行图案化的在线法
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP5842503B2 (ja) * 2010-09-29 2016-01-13 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法
KR101811064B1 (ko) 2010-09-29 2017-12-20 제이에스알 가부시끼가이샤 패턴형성 방법, 레지스트 하층막의 형성 방법, 레지스트 하층막 형성용 조성물 및 레지스트 하층막
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
KR101993480B1 (ko) * 2011-12-16 2019-06-26 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 수지 조성물, 레지스트 하층막, 그의 형성 방법 및 패턴 형성 방법
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Also Published As

Publication number Publication date
DE19940320A1 (de) 2000-07-06
IT1308658B1 (it) 2002-01-09
US20020120070A1 (en) 2002-08-29
ITTO991027A1 (it) 2001-05-24
US6492441B2 (en) 2002-12-10
CN1260355A (zh) 2000-07-19
CN1166704C (zh) 2004-09-15
NL1012840A1 (nl) 2000-07-03
FR2788060A1 (fr) 2000-07-07
DE19940320B4 (de) 2006-09-21
US6350818B1 (en) 2002-02-26
GB2345289B (en) 2003-03-26
TWI227259B (en) 2005-02-01
ITTO991027A0 (it) 1999-11-24
JP4253088B2 (ja) 2009-04-08
KR20010016643A (ko) 2001-03-05
GB2345289A (en) 2000-07-05
NL1012840C2 (nl) 2001-06-07
JP2000204115A (ja) 2000-07-25
JP2007231270A (ja) 2007-09-13
GB9917218D0 (en) 1999-09-22
FR2788060B1 (fr) 2003-10-17

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