KR100352235B1 - 세라믹 인덕터 부품 및 이를 사용한 복합 부품 - Google Patents
세라믹 인덕터 부품 및 이를 사용한 복합 부품 Download PDFInfo
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- KR100352235B1 KR100352235B1 KR1020000066974A KR20000066974A KR100352235B1 KR 100352235 B1 KR100352235 B1 KR 100352235B1 KR 1020000066974 A KR1020000066974 A KR 1020000066974A KR 20000066974 A KR20000066974 A KR 20000066974A KR 100352235 B1 KR100352235 B1 KR 100352235B1
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- South Korea
- Prior art keywords
- ppm
- ferrite
- ceramic
- inductor
- chlorine
- Prior art date
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- 239000000919 ceramic Substances 0.000 title claims abstract description 114
- 239000002131 composite material Substances 0.000 title claims description 21
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 80
- 239000011734 sodium Substances 0.000 claims abstract description 57
- 239000000460 chlorine Substances 0.000 claims abstract description 56
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 49
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 48
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 47
- 239000000696 magnetic material Substances 0.000 claims abstract description 37
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 28
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 28
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000011593 sulfur Substances 0.000 claims abstract description 28
- 229910017518 Cu Zn Inorganic materials 0.000 claims abstract description 21
- 229910017752 Cu-Zn Inorganic materials 0.000 claims abstract description 21
- 229910017943 Cu—Zn Inorganic materials 0.000 claims abstract description 21
- 229910018054 Ni-Cu Inorganic materials 0.000 claims abstract description 16
- 229910018481 Ni—Cu Inorganic materials 0.000 claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 239000004332 silver Substances 0.000 claims abstract description 13
- 238000010304 firing Methods 0.000 claims description 8
- 238000009413 insulation Methods 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 27
- 239000003990 capacitor Substances 0.000 description 9
- 238000007747 plating Methods 0.000 description 9
- 239000002002 slurry Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 239000007772 electrode material Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910018605 Ni—Zn Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002045 lasting effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- VOZUOVVAXCSJPX-UHFFFAOYSA-N copper nickel zirconium Chemical compound [Ni][Cu][Zr] VOZUOVVAXCSJPX-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ZSJFLDUTBDIFLJ-UHFFFAOYSA-N nickel zirconium Chemical compound [Ni].[Zr] ZSJFLDUTBDIFLJ-UHFFFAOYSA-N 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- -1 respectively Chemical compound 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/2666—Other ferrites containing nickel, copper or cobalt
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- H01F17/02—Fixed inductances of the signal type without magnetic core
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- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
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- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
- H01F1/342—Oxides
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- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
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- C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
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- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
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Abstract
Description
Claims (6)
- 세라믹 자성체 및 은을 주성분으로 하는 전극을 일체로 베이킹함으로써 형성된 인덕터부를 포함하는 세라믹 인덕터 부품으로서,상기 세라믹 자성체는 Ni-Cu-Zn 페라이트 및 Ni-Cu 페라이트 중의 하나를 포함하며,상기 페라이트에 있어서의 황, 염소 및 나트륨의 함량이 황 5 내지 150ppm, 염소 5 내지 150ppm, 나트륨 5 내지 100ppm의 범위에 있는 것을 특징으로 하는 세라믹 인덕터 부품.
- 세라믹 자성체 및 은을 주성분으로 하는 전극을 일체로 베이킹함으로써 형성된 인덕터부를 포함하는 세라믹 인덕터 부품으로서,상기 세라믹 자성체는 Ni-Cu-Zn 페라이트 및 Ni-Cu 페라이트 중의 하나를 포함하며,소성전의 상기 페라이트에 있어서의 황, 염소 및 나트륨의 함량이 황 10 내지 600ppm, 염소 10 내지 600ppm, 나트륨 30 내지 120ppm의 범위에 있으며,소성후의 상기 페라이트에 있어서의 황, 염소 및 나트륨의 함량이 황 5 내지 150ppm, 염소 5 내지 150ppm, 나트륨 5 내지 100ppm의 범위에 있는 것을 특징으로 하는 세라믹 인덕터 부품.
- 제 1 항 또는 제 2 항에 있어서, 상기 인덕터부는 상기 세라믹 자성체내에 제공된 적층 코일을 포함하며, 상기 적층 코일은 복수의 전극층이 자성 세라믹층을 사이에 개재하면서 서로 적층되고, 또한 각 전극층이 서로 접속되도록 형성되는 것을 특징으로 하는 세라믹 인덕터 부품.
- 세라믹 자성체 및 은을 주성분으로 하는 전극을 일체로 베이킹함으로써 형성된 인덕터부; 및상기 인덕터부와 일체화된 적어도 한 소자;를 포함하는 복합 부품으로서,상기 세라믹 자성체는 Ni-Cu-Zn 페라이트 및 Ni-Cu 페라이트 중의 하나를 포함하며,상기 페라이트에 있어서의 황, 염소 및 나트륨의 함량이 황 5 내지 150ppm, 염소 5 내지 150ppm, 나트륨 5 내지 100ppm의 범위에 있는 것을 특징으로 하는 복합 부품.
- 세라믹 자성체 및 은을 주성분으로 하는 전극을 일체로 베이킹함으로써 형성된 인덕터부; 및상기 인덕터부와 일체화된 적어도 한 소자;를 포함하는 복합 부품으로서,상기 세라믹 자성체는 Ni-Cu-Zn 페라이트 및 Ni-Cu 페라이트 중의 하나를 포함하며,소성전의 상기 페라이트에 있어서의 황, 염소 및 나트륨의 함량이 황 10 내지 600ppm, 염소 10 내지 600ppm, 나트륨 30 내지 120ppm의 범위에 있으며,소성후의 상기 페라이트에 있어서의 황, 염소 및 나트륨의 함량이 황 5 내지 150ppm, 염소 5 내지 150ppm, 나트륨 5 내지 100ppm의 범위에 있는 것을 특징으로 하는 복합 부품.
- 제 4 항 또는 제 5 항에 있어서, 상기 인덕터부는 상기 세라믹 자성체내에 제공된 적층 코일을 포함하며, 상기 적층 코일은 복수의 전극층이 자성 세라믹층을 사이에 개재하면서 서로 적층되고, 또한 각 전극층이 서로 접속되도록 형성되는 것을 특징으로 하는 복합 부품.
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JP32085699A JP3465649B2 (ja) | 1999-11-11 | 1999-11-11 | セラミックインダクタ部品及び複合部品 |
JP11-320856 | 1999-11-11 |
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US (1) | US6489877B1 (ko) |
JP (1) | JP3465649B2 (ko) |
KR (1) | KR100352235B1 (ko) |
CN (1) | CN1163920C (ko) |
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JP2003174749A (ja) * | 2001-12-06 | 2003-06-20 | Matsushita Electric Ind Co Ltd | 積層セラミックコイルおよびこれを用いたモータ |
US20050035688A1 (en) * | 2002-01-11 | 2005-02-17 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive device and method of manufacturing same |
WO2003061023A1 (fr) * | 2002-01-11 | 2003-07-24 | Ngk Insulators, Ltd. | Dispositif piezo-electrique/electrostrictif et son procede de production |
JP3594031B1 (ja) | 2003-07-04 | 2004-11-24 | 株式会社村田製作所 | 積層セラミック電子部品、積層コイル部品および積層セラミック電子部品の製造方法 |
CN1326805C (zh) * | 2004-03-11 | 2007-07-18 | 横店集团东磁有限公司 | 一种低温共烧NiCuZn铁氧体材料及其制备方法 |
JP2006216636A (ja) * | 2005-02-02 | 2006-08-17 | Tdk Corp | 複合積層型電子部品 |
JP2006216635A (ja) * | 2005-02-02 | 2006-08-17 | Tdk Corp | 複合積層型電子部品 |
JP2006245258A (ja) * | 2005-03-03 | 2006-09-14 | Tdk Corp | 複合積層型電子部品 |
CN101473387B (zh) * | 2006-06-23 | 2011-07-27 | 株式会社村田制作所 | 层叠型陶瓷电子元件 |
EP2040272A4 (en) * | 2006-07-05 | 2017-04-19 | Hitachi Metals, Ltd. | Laminated component |
US8432237B2 (en) * | 2009-05-21 | 2013-04-30 | Qualcomm, Incorporated | Output circuit with integrated impedance matching, power combining and filtering for power amplifiers and other circuits |
CN102741956B (zh) * | 2010-02-01 | 2014-08-20 | 株式会社村田制作所 | 电子部件的制造方法 |
CN102792395B (zh) * | 2010-03-05 | 2016-07-06 | 株式会社村田制作所 | 陶瓷电子元件及陶瓷电子元件的制造方法 |
JP5471672B2 (ja) * | 2010-03-23 | 2014-04-16 | Tdk株式会社 | 積層型電子部品及びその製造方法 |
US8545355B2 (en) * | 2011-10-11 | 2013-10-01 | Ford Global Technologies, Llc | Assembly method for hybrid electric transmission |
CN102436906B (zh) * | 2011-12-15 | 2016-02-10 | 广东顺祥节能照明科技有限公司 | 一种掺铜陶瓷电磁耦合器器芯及其制备方法 |
KR101408617B1 (ko) * | 2012-11-20 | 2014-06-17 | 삼성전기주식회사 | 적층형 코일 부품 |
CN205092106U (zh) * | 2013-02-08 | 2016-03-16 | 株式会社村田制作所 | 层叠型电感元件以及dc-dc转换器模块 |
CN103441744B (zh) * | 2013-08-23 | 2017-05-10 | 深圳振华富电子有限公司 | 叠层片式旁路吸波器及其制造方法 |
WO2015064693A1 (ja) * | 2013-10-31 | 2015-05-07 | 戸田工業株式会社 | フェライト焼結体、フェライト焼結板及びフェライト焼結シート |
WO2016185633A1 (ja) * | 2015-05-18 | 2016-11-24 | Tdk株式会社 | 複合体 |
CN105551712B (zh) * | 2016-03-11 | 2017-07-18 | 深圳市固电电子有限公司 | 一种片式陶瓷电感器及其制作方法 |
US10763031B2 (en) | 2016-08-30 | 2020-09-01 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing an inductor |
CN106816264B (zh) * | 2016-12-28 | 2018-08-03 | 深圳顺络电子股份有限公司 | 一种铁氧体磁珠及其制备方法 |
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US6489877B1 (en) | 2002-12-03 |
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CN1163920C (zh) | 2004-08-25 |
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