KR100343938B1 - Preparation method of interlayer insulation membrane of semiconductor - Google Patents
Preparation method of interlayer insulation membrane of semiconductor Download PDFInfo
- Publication number
- KR100343938B1 KR100343938B1 KR1020000071645A KR20000071645A KR100343938B1 KR 100343938 B1 KR100343938 B1 KR 100343938B1 KR 1020000071645 A KR1020000071645 A KR 1020000071645A KR 20000071645 A KR20000071645 A KR 20000071645A KR 100343938 B1 KR100343938 B1 KR 100343938B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- insulation membrane
- semiconductor
- acid
- interlayer insulation
- Prior art date
Links
- 238000009413 insulation Methods 0.000 title abstract 3
- 239000012528 membrane Substances 0.000 title abstract 3
- 239000011229 interlayer Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000002360 preparation method Methods 0.000 title 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract 3
- 239000003377 acid catalyst Substances 0.000 abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 abstract 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000003960 organic solvent Substances 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 125000003545 alkoxy group Chemical group 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 abstract 1
- 229940092714 benzenesulfonic acid Drugs 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000006482 condensation reaction Methods 0.000 abstract 1
- 125000000753 cycloalkyl group Chemical group 0.000 abstract 1
- 235000019253 formic acid Nutrition 0.000 abstract 1
- 125000005843 halogen group Chemical group 0.000 abstract 1
- 230000007062 hydrolysis Effects 0.000 abstract 1
- 238000006460 hydrolysis reaction Methods 0.000 abstract 1
- 235000006408 oxalic acid Nutrition 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Silicon Polymers (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000071645A KR100343938B1 (en) | 2000-11-29 | 2000-11-29 | Preparation method of interlayer insulation membrane of semiconductor |
US09/895,158 US6660822B2 (en) | 2000-11-29 | 2001-07-02 | Method for forming insulating film between interconnect layers in microelectronic devices |
EP01309615A EP1217649B1 (en) | 2000-11-29 | 2001-11-14 | Method for forming insulating film between interconnect layers in microelectronic devices |
AT01309615T ATE529887T1 (de) | 2000-11-29 | 2001-11-14 | Methode zur herstellung isolierender schichten zwischen leiterbahnebenen in mikroelektronischen anordnungen |
JP2001359541A JP3646087B2 (ja) | 2000-11-29 | 2001-11-26 | 半導体層間絶縁膜の形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000071645A KR100343938B1 (en) | 2000-11-29 | 2000-11-29 | Preparation method of interlayer insulation membrane of semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100343938B1 true KR100343938B1 (en) | 2002-07-20 |
Family
ID=19702250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000071645A KR100343938B1 (en) | 2000-11-29 | 2000-11-29 | Preparation method of interlayer insulation membrane of semiconductor |
Country Status (5)
Country | Link |
---|---|
US (1) | US6660822B2 (ko) |
EP (1) | EP1217649B1 (ko) |
JP (1) | JP3646087B2 (ko) |
KR (1) | KR100343938B1 (ko) |
AT (1) | ATE529887T1 (ko) |
Cited By (6)
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KR100488347B1 (ko) * | 2002-10-31 | 2005-05-10 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막의형성방법 |
KR100532915B1 (ko) * | 2002-10-29 | 2005-12-02 | 삼성전자주식회사 | 단당류계 또는 올리고당류계 포로젠을 포함하는 다공성층간 절연막을 형성하기 위한 조성물 |
KR100554327B1 (ko) * | 2001-09-14 | 2006-02-24 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막의 형성방법 |
KR100660265B1 (ko) * | 2003-06-30 | 2006-12-20 | 삼성전자주식회사 | 다반응성 환형 실록산 화합물, 상기 화합물로부터 제조된실록산계 중합체 및 상기 중합체를 이용한 절연막제조방법 |
US7582718B2 (en) | 2003-12-13 | 2009-09-01 | Samsung Electronics Co., Ltd. | Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer |
KR101202955B1 (ko) | 2004-12-31 | 2012-11-19 | 삼성코닝정밀소재 주식회사 | 다공성 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법 |
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US20040038048A1 (en) * | 2000-02-02 | 2004-02-26 | Lg Chemical Ltd. | Semiconductor interlayer dielectric material and a semiconductor device using the same |
US6623711B2 (en) * | 2001-03-27 | 2003-09-23 | Samsung Electronics Co., Ltd. | Siloxane-based resin and method for forming insulating film between interconnect layers in semiconductor devices by using the same |
JP3884699B2 (ja) * | 2002-11-13 | 2007-02-21 | 信越化学工業株式会社 | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
JP2004161877A (ja) * | 2002-11-13 | 2004-06-10 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
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US6005131A (en) * | 1996-01-30 | 1999-12-21 | Bayer Aktiengesellschaft | Multi-functional, cyclic organosiloxanes, process for the production thereof and use thereof |
DE19807634A1 (de) * | 1997-05-23 | 1998-11-26 | Agfa Gevaert Ag | Beschichtete Partikel |
DE19828256A1 (de) * | 1998-06-25 | 1999-12-30 | Bayer Ag | Antifoulingmittel, ein Verfahren zur Herstellung und deren Verwendung sowie daraus hergestellte Antifoulingbeschichtungen |
JP2000309753A (ja) * | 1999-04-27 | 2000-11-07 | Jsr Corp | 膜形成用組成物および絶縁膜形成用材料 |
-
2000
- 2000-11-29 KR KR1020000071645A patent/KR100343938B1/ko active IP Right Grant
-
2001
- 2001-07-02 US US09/895,158 patent/US6660822B2/en not_active Expired - Lifetime
- 2001-11-14 AT AT01309615T patent/ATE529887T1/de not_active IP Right Cessation
- 2001-11-14 EP EP01309615A patent/EP1217649B1/en not_active Expired - Lifetime
- 2001-11-26 JP JP2001359541A patent/JP3646087B2/ja not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100554327B1 (ko) * | 2001-09-14 | 2006-02-24 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막의 형성방법 |
KR100532915B1 (ko) * | 2002-10-29 | 2005-12-02 | 삼성전자주식회사 | 단당류계 또는 올리고당류계 포로젠을 포함하는 다공성층간 절연막을 형성하기 위한 조성물 |
KR100488347B1 (ko) * | 2002-10-31 | 2005-05-10 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막의형성방법 |
KR100660265B1 (ko) * | 2003-06-30 | 2006-12-20 | 삼성전자주식회사 | 다반응성 환형 실록산 화합물, 상기 화합물로부터 제조된실록산계 중합체 및 상기 중합체를 이용한 절연막제조방법 |
US7582718B2 (en) | 2003-12-13 | 2009-09-01 | Samsung Electronics Co., Ltd. | Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer |
US8053173B2 (en) | 2003-12-13 | 2011-11-08 | Samsung Electronics Co., Ltd. | Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer |
KR101202955B1 (ko) | 2004-12-31 | 2012-11-19 | 삼성코닝정밀소재 주식회사 | 다공성 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
ATE529887T1 (de) | 2011-11-15 |
JP2002231715A (ja) | 2002-08-16 |
EP1217649A3 (en) | 2004-03-10 |
EP1217649B1 (en) | 2011-10-19 |
EP1217649A2 (en) | 2002-06-26 |
JP3646087B2 (ja) | 2005-05-11 |
US6660822B2 (en) | 2003-12-09 |
US20020098279A1 (en) | 2002-07-25 |
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