KR100343646B1 - 반도체메모리 - Google Patents

반도체메모리 Download PDF

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Publication number
KR100343646B1
KR100343646B1 KR1019940031265A KR19940031265A KR100343646B1 KR 100343646 B1 KR100343646 B1 KR 100343646B1 KR 1019940031265 A KR1019940031265 A KR 1019940031265A KR 19940031265 A KR19940031265 A KR 19940031265A KR 100343646 B1 KR100343646 B1 KR 100343646B1
Authority
KR
South Korea
Prior art keywords
potential
memory
mode
semiconductor memory
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940031265A
Other languages
English (en)
Korean (ko)
Other versions
KR950020705A (ko
Inventor
다케우치칸
호리구치마사시
아오키마사카즈
마츠노카츠미
사카타타케시
에토쥰
Original Assignee
가부시끼가이샤 히다치 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 히다치 세이사꾸쇼 filed Critical 가부시끼가이샤 히다치 세이사꾸쇼
Publication of KR950020705A publication Critical patent/KR950020705A/ko
Application granted granted Critical
Publication of KR100343646B1 publication Critical patent/KR100343646B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019940031265A 1993-12-22 1994-11-25 반도체메모리 Expired - Fee Related KR100343646B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32482593A JP3279025B2 (ja) 1993-12-22 1993-12-22 半導体メモリ
JP93-324825 1993-12-22

Publications (2)

Publication Number Publication Date
KR950020705A KR950020705A (ko) 1995-07-24
KR100343646B1 true KR100343646B1 (ko) 2002-12-02

Family

ID=18170104

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940031265A Expired - Fee Related KR100343646B1 (ko) 1993-12-22 1994-11-25 반도체메모리

Country Status (4)

Country Link
JP (1) JP3279025B2 (enExample)
KR (1) KR100343646B1 (enExample)
CN (1) CN1047249C (enExample)
TW (1) TW271008B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3622304B2 (ja) * 1995-12-27 2005-02-23 株式会社日立製作所 半導体記憶装置
US5703804A (en) * 1996-09-26 1997-12-30 Sharp Kabushiki K.K. Semiconductor memory device
US5828596A (en) * 1996-09-26 1998-10-27 Sharp Kabushiki Kaisha Semiconductor memory device
NO312698B1 (no) * 2000-07-07 2002-06-17 Thin Film Electronics Asa Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten
KR100425160B1 (ko) 2001-05-28 2004-03-30 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 승압전압 발생회로 및그 발생방법
WO2005122180A1 (ja) * 2004-06-08 2005-12-22 Fujitsu Limited 半導体記憶装置の検査方法
JPWO2008105076A1 (ja) * 2007-02-27 2010-06-03 富士通株式会社 Ｒｆｉｄタグｌｓｉおよびｒｆｉｄタグ制御方法
CN107533860B (zh) * 2015-05-28 2022-02-08 英特尔公司 具有非易失性留存的基于铁电的存储器单元

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory

Also Published As

Publication number Publication date
JP3279025B2 (ja) 2002-04-30
JPH07182872A (ja) 1995-07-21
CN1047249C (zh) 1999-12-08
CN1112716A (zh) 1995-11-29
TW271008B (enExample) 1996-02-21
KR950020705A (ko) 1995-07-24

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