JP3279025B2 - 半導体メモリ - Google Patents

半導体メモリ

Info

Publication number
JP3279025B2
JP3279025B2 JP32482593A JP32482593A JP3279025B2 JP 3279025 B2 JP3279025 B2 JP 3279025B2 JP 32482593 A JP32482593 A JP 32482593A JP 32482593 A JP32482593 A JP 32482593A JP 3279025 B2 JP3279025 B2 JP 3279025B2
Authority
JP
Japan
Prior art keywords
potential
semiconductor memory
memory
mode
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP32482593A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07182872A (ja
Inventor
幹 竹内
真志 堀口
正和 青木
勝己 松野
健 阪田
潤 衛藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP32482593A priority Critical patent/JP3279025B2/ja
Priority to KR1019940031265A priority patent/KR100343646B1/ko
Priority to TW083111269A priority patent/TW271008B/zh
Priority to CN94119568A priority patent/CN1047249C/zh
Priority to US08/362,239 priority patent/US5539279A/en
Publication of JPH07182872A publication Critical patent/JPH07182872A/ja
Application granted granted Critical
Publication of JP3279025B2 publication Critical patent/JP3279025B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP32482593A 1993-06-23 1993-12-22 半導体メモリ Expired - Fee Related JP3279025B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP32482593A JP3279025B2 (ja) 1993-12-22 1993-12-22 半導体メモリ
KR1019940031265A KR100343646B1 (ko) 1993-12-22 1994-11-25 반도체메모리
TW083111269A TW271008B (enExample) 1993-12-22 1994-12-05
CN94119568A CN1047249C (zh) 1993-12-22 1994-12-21 半导体存储器
US08/362,239 US5539279A (en) 1993-06-23 1994-12-22 Ferroelectric memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32482593A JP3279025B2 (ja) 1993-12-22 1993-12-22 半導体メモリ

Publications (2)

Publication Number Publication Date
JPH07182872A JPH07182872A (ja) 1995-07-21
JP3279025B2 true JP3279025B2 (ja) 2002-04-30

Family

ID=18170104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32482593A Expired - Fee Related JP3279025B2 (ja) 1993-06-23 1993-12-22 半導体メモリ

Country Status (4)

Country Link
JP (1) JP3279025B2 (enExample)
KR (1) KR100343646B1 (enExample)
CN (1) CN1047249C (enExample)
TW (1) TW271008B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3622304B2 (ja) * 1995-12-27 2005-02-23 株式会社日立製作所 半導体記憶装置
US5828596A (en) * 1996-09-26 1998-10-27 Sharp Kabushiki Kaisha Semiconductor memory device
US5703804A (en) * 1996-09-26 1997-12-30 Sharp Kabushiki K.K. Semiconductor memory device
NO312698B1 (no) * 2000-07-07 2002-06-17 Thin Film Electronics Asa Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten
KR100425160B1 (ko) 2001-05-28 2004-03-30 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 승압전압 발생회로 및그 발생방법
CN100592426C (zh) * 2004-06-08 2010-02-24 富士通微电子株式会社 半导体存储装置的检查方法
WO2008105076A1 (ja) * 2007-02-27 2008-09-04 Fujitsu Limited Ｒｆｉｄタグｌｓｉおよびｒｆｉｄタグ制御方法
CN107533860B (zh) * 2015-05-28 2022-02-08 英特尔公司 具有非易失性留存的基于铁电的存储器单元

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory

Also Published As

Publication number Publication date
KR950020705A (ko) 1995-07-24
KR100343646B1 (ko) 2002-12-02
TW271008B (enExample) 1996-02-21
CN1047249C (zh) 1999-12-08
CN1112716A (zh) 1995-11-29
JPH07182872A (ja) 1995-07-21

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