CN1047249C - 半导体存储器 - Google Patents

半导体存储器 Download PDF

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Publication number
CN1047249C
CN1047249C CN94119568A CN94119568A CN1047249C CN 1047249 C CN1047249 C CN 1047249C CN 94119568 A CN94119568 A CN 94119568A CN 94119568 A CN94119568 A CN 94119568A CN 1047249 C CN1047249 C CN 1047249C
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CN
China
Prior art keywords
voltage
ferroelectric memory
ferroelectric
potential
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN94119568A
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English (en)
Chinese (zh)
Other versions
CN1112716A (zh
Inventor
竹内干
堀口真志
青木正和
松野胜己
阪田健
卫藤润
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1112716A publication Critical patent/CN1112716A/zh
Application granted granted Critical
Publication of CN1047249C publication Critical patent/CN1047249C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
CN94119568A 1993-12-22 1994-12-21 半导体存储器 Expired - Fee Related CN1047249C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32482593A JP3279025B2 (ja) 1993-12-22 1993-12-22 半導体メモリ
JP324825/93 1993-12-22

Publications (2)

Publication Number Publication Date
CN1112716A CN1112716A (zh) 1995-11-29
CN1047249C true CN1047249C (zh) 1999-12-08

Family

ID=18170104

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94119568A Expired - Fee Related CN1047249C (zh) 1993-12-22 1994-12-21 半导体存储器

Country Status (4)

Country Link
JP (1) JP3279025B2 (enExample)
KR (1) KR100343646B1 (enExample)
CN (1) CN1047249C (enExample)
TW (1) TW271008B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3622304B2 (ja) * 1995-12-27 2005-02-23 株式会社日立製作所 半導体記憶装置
US5828596A (en) * 1996-09-26 1998-10-27 Sharp Kabushiki Kaisha Semiconductor memory device
US5703804A (en) * 1996-09-26 1997-12-30 Sharp Kabushiki K.K. Semiconductor memory device
NO312698B1 (no) * 2000-07-07 2002-06-17 Thin Film Electronics Asa Fremgangsmåte til å utföre skrive- og leseoperasjoner i en passiv matriseminne og apparat for å utföre fremgangsmåten
KR100425160B1 (ko) 2001-05-28 2004-03-30 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 승압전압 발생회로 및그 발생방법
CN100592426C (zh) * 2004-06-08 2010-02-24 富士通微电子株式会社 半导体存储装置的检查方法
WO2008105076A1 (ja) * 2007-02-27 2008-09-04 Fujitsu Limited Ｒｆｉｄタグｌｓｉおよびｒｆｉｄタグ制御方法
CN107533860B (zh) * 2015-05-28 2022-02-08 英特尔公司 具有非易失性留存的基于铁电的存储器单元

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086412A (en) * 1990-11-21 1992-02-04 National Semiconductor Corporation Sense amplifier and method for ferroelectric memory

Also Published As

Publication number Publication date
KR950020705A (ko) 1995-07-24
KR100343646B1 (ko) 2002-12-02
TW271008B (enExample) 1996-02-21
JP3279025B2 (ja) 2002-04-30
CN1112716A (zh) 1995-11-29
JPH07182872A (ja) 1995-07-21

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C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee