KR100336277B1 - 동일칩상에고전압및저전압트랜지스터를배치할수있도록하기위해폴리실리콘게이트의도핑에있어서변화를이용하는반도체프로세싱 - Google Patents

동일칩상에고전압및저전압트랜지스터를배치할수있도록하기위해폴리실리콘게이트의도핑에있어서변화를이용하는반도체프로세싱 Download PDF

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Publication number
KR100336277B1
KR100336277B1 KR1019940009247A KR19940009247A KR100336277B1 KR 100336277 B1 KR100336277 B1 KR 100336277B1 KR 1019940009247 A KR1019940009247 A KR 1019940009247A KR 19940009247 A KR19940009247 A KR 19940009247A KR 100336277 B1 KR100336277 B1 KR 100336277B1
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South Korea
Prior art keywords
gate
low voltage
high voltage
polysilicon layer
region
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Expired - Lifetime
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KR1019940009247A
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English (en)
Korean (ko)
Inventor
리차드에이.챔프만
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텍사스 인스트루먼츠 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019940009247A 1993-04-29 1994-04-29 동일칩상에고전압및저전압트랜지스터를배치할수있도록하기위해폴리실리콘게이트의도핑에있어서변화를이용하는반도체프로세싱 Expired - Lifetime KR100336277B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/055.999 1993-04-29
US08/055,999 US5468666A (en) 1993-04-29 1993-04-29 Using a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chip

Publications (1)

Publication Number Publication Date
KR100336277B1 true KR100336277B1 (ko) 2002-11-27

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KR1019940009247A Expired - Lifetime KR100336277B1 (ko) 1993-04-29 1994-04-29 동일칩상에고전압및저전압트랜지스터를배치할수있도록하기위해폴리실리콘게이트의도핑에있어서변화를이용하는반도체프로세싱

Country Status (6)

Country Link
US (2) US5468666A (enExample)
EP (1) EP0661751B1 (enExample)
JP (1) JP3513212B2 (enExample)
KR (1) KR100336277B1 (enExample)
DE (1) DE69432918T2 (enExample)
TW (1) TW253068B (enExample)

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DE69432918T2 (de) 2004-02-26
TW253068B (enExample) 1995-08-01
EP0661751B1 (en) 2003-07-09
EP0661751A1 (en) 1995-07-05
US6348719B1 (en) 2002-02-19
JP3513212B2 (ja) 2004-03-31
DE69432918D1 (de) 2003-08-14
JPH07130870A (ja) 1995-05-19
US5468666A (en) 1995-11-21

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