GB2337158B - Method of fabricating dual voltage mos transistors - Google Patents

Method of fabricating dual voltage mos transistors

Info

Publication number
GB2337158B
GB2337158B GB9809650A GB9809650A GB2337158B GB 2337158 B GB2337158 B GB 2337158B GB 9809650 A GB9809650 A GB 9809650A GB 9809650 A GB9809650 A GB 9809650A GB 2337158 B GB2337158 B GB 2337158B
Authority
GB
United Kingdom
Prior art keywords
mos transistors
voltage mos
dual voltage
fabricating dual
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9809650A
Other versions
GB9809650D0 (en
GB2337158A (en
Inventor
Jyh-Kuang Lin
Joe Ko
Gary Hong
Peter Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
United Semiconductor Corp
Original Assignee
United Microelectronics Corp
United Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW87101626A external-priority patent/TW442973B/en
Application filed by United Microelectronics Corp, United Semiconductor Corp filed Critical United Microelectronics Corp
Priority to GB9809650A priority Critical patent/GB2337158B/en
Priority to DE19823133A priority patent/DE19823133A1/en
Priority to NL1009262A priority patent/NL1009262C2/en
Priority to FR9806658A priority patent/FR2774812B1/en
Priority to JP10146832A priority patent/JP3058617B2/en
Publication of GB9809650D0 publication Critical patent/GB9809650D0/en
Publication of GB2337158A publication Critical patent/GB2337158A/en
Publication of GB2337158B publication Critical patent/GB2337158B/en
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB9809650A 1998-02-07 1998-05-06 Method of fabricating dual voltage mos transistors Expired - Fee Related GB2337158B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB9809650A GB2337158B (en) 1998-02-07 1998-05-06 Method of fabricating dual voltage mos transistors
DE19823133A DE19823133A1 (en) 1998-02-07 1998-05-23 Multiple voltage MOS transistor production for sub-micron applications requiring selection between two or more voltages
NL1009262A NL1009262C2 (en) 1998-02-07 1998-05-26 A method of fabricating dual voltage MOS transistors.
FR9806658A FR2774812B1 (en) 1998-02-07 1998-05-27 METHOD FOR MANUFACTURING TWO-VOLTAGE MOS TRANSISTORS
JP10146832A JP3058617B2 (en) 1998-02-07 1998-05-28 Method of manufacturing dual voltage MOS transistor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW87101626A TW442973B (en) 1998-02-07 1998-02-07 Method for fabricating dual-voltage metal oxide semiconductor transistor
GB9809650A GB2337158B (en) 1998-02-07 1998-05-06 Method of fabricating dual voltage mos transistors
NL1009262A NL1009262C2 (en) 1998-02-07 1998-05-26 A method of fabricating dual voltage MOS transistors.

Publications (3)

Publication Number Publication Date
GB9809650D0 GB9809650D0 (en) 1998-07-01
GB2337158A GB2337158A (en) 1999-11-10
GB2337158B true GB2337158B (en) 2003-04-02

Family

ID=27269301

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9809650A Expired - Fee Related GB2337158B (en) 1998-02-07 1998-05-06 Method of fabricating dual voltage mos transistors

Country Status (5)

Country Link
JP (1) JP3058617B2 (en)
DE (1) DE19823133A1 (en)
FR (1) FR2774812B1 (en)
GB (1) GB2337158B (en)
NL (1) NL1009262C2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2816108B1 (en) * 2000-10-30 2003-02-21 St Microelectronics Sa METHOD FOR THE SIMULTANEOUS MANUFACTURING OF A PAIR OF INSULATED GRID TRANSISTORS HAVING RESPECTIVELY A THIN OXIDE AND A THICK OXIDE, AND CORRESPONDING INTEGRATED CIRCUIT COMPRISING SUCH A PAIR OF TRANSISTORS
US7026219B2 (en) * 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US6531731B2 (en) * 2001-06-15 2003-03-11 Motorola, Inc. Integration of two memory types on the same integrated circuit
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
CN100337323C (en) * 2002-12-31 2007-09-12 上海贝岭股份有限公司 Manufacturing technology of high voltage integrated circuit
EP1443553A1 (en) * 2003-01-30 2004-08-04 Brilliance Semiconductor, Inc. Fabrication method of static random access memory cell
KR100937659B1 (en) * 2007-12-04 2010-01-19 주식회사 동부하이텍 Method for manufacturing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0661751A1 (en) * 1993-04-29 1995-07-05 Texas Instruments Incorporated CMOS device with high and low voltage transistors
US5516711A (en) * 1994-12-16 1996-05-14 Mosel Vitelic, Inc. Method for forming LDD CMOS with oblique implantation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244366A (en) * 1993-02-12 1994-09-02 Sony Corp Manufacture of mos transistor
JP3050717B2 (en) * 1993-03-24 2000-06-12 シャープ株式会社 Method for manufacturing semiconductor device
JPH07193200A (en) * 1993-12-27 1995-07-28 Mitsubishi Electric Corp Involatile semiconductor memory
JP3055424B2 (en) * 1994-04-28 2000-06-26 株式会社デンソー Method of manufacturing MIS type semiconductor device
JP4173919B2 (en) * 1995-07-07 2008-10-29 株式会社ルネサステクノロジ Manufacturing method of semiconductor integrated circuit device
US5534449A (en) * 1995-07-17 1996-07-09 Micron Technology, Inc. Methods of forming complementary metal oxide semiconductor (CMOS) integrated circuitry
KR970013402A (en) * 1995-08-28 1997-03-29 김광호 Flash memory device and manufacturing method thereof
JPH1022397A (en) * 1996-07-05 1998-01-23 Ricoh Co Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0661751A1 (en) * 1993-04-29 1995-07-05 Texas Instruments Incorporated CMOS device with high and low voltage transistors
US5516711A (en) * 1994-12-16 1996-05-14 Mosel Vitelic, Inc. Method for forming LDD CMOS with oblique implantation

Also Published As

Publication number Publication date
FR2774812B1 (en) 2003-09-26
GB9809650D0 (en) 1998-07-01
JPH11238809A (en) 1999-08-31
NL1009262C2 (en) 1999-12-03
JP3058617B2 (en) 2000-07-04
DE19823133A1 (en) 1999-08-19
FR2774812A1 (en) 1999-08-13
GB2337158A (en) 1999-11-10

Similar Documents

Publication Publication Date Title
KR0137902B1 (en) Mos transistor & manufacturing method thereof
SG83108A1 (en) Field effect transistor and method of its manufacture
AU2002356486A1 (en) High voltage mos transistor
SG70150A1 (en) Method for dual gate oxide dual workfunction cmos
GB2328793B (en) Thin-film transistor and method of making same
SG50863A1 (en) A method of manufacturing an insulated gate field effect transistor
IL142816A0 (en) SUCCINOYLAMINO BENZODIAZEPINES AS INHIBITORS OF Aβ PROTEIN PRODUCTION
GB9620783D0 (en) Mos gate driver circuit
GB2339631B (en) Narrow-channel effect free transistor and method of formation thereof
SG105493A1 (en) Method for making field effect transistors with improved implants
DE60042866D1 (en) Low-voltage MOS arrangement and corresponding manufacturing method
EP0676810A3 (en) Insulated gate field effect transistor and method of fabricating.
GB2322968B (en) Thin-film transistor and method of making same
EP0676809A3 (en) Insulated gate field effect transistor and method of fabricating.
GB2313233B (en) CMOS transistor and manufacturing method therefor
SG87891A1 (en) Method of fabricating wedge isolation transistors
GB2299452B (en) MOS transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof
SG87937A1 (en) Method of forming mos/cmos devices with dual or triple gate oxide
GB2337158B (en) Method of fabricating dual voltage mos transistors
EP1246255A3 (en) Insulated gate bipolar transistor and method of making the same
HK1056268A1 (en) Method of reducing voltage stress of a transistor
EP1278234A3 (en) MOS transistor and method of manufacturing
GB2395602B (en) MOS transistor and method of manufacturing the same
AU1983399A (en) Method of fabricating semiconductor device
AU9499698A (en) Metal gate fermi-threshold field effect transistors

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090506