AU9499698A - Metal gate fermi-threshold field effect transistors - Google Patents

Metal gate fermi-threshold field effect transistors

Info

Publication number
AU9499698A
AU9499698A AU94996/98A AU9499698A AU9499698A AU 9499698 A AU9499698 A AU 9499698A AU 94996/98 A AU94996/98 A AU 94996/98A AU 9499698 A AU9499698 A AU 9499698A AU 9499698 A AU9499698 A AU 9499698A
Authority
AU
Australia
Prior art keywords
field effect
effect transistors
metal gate
threshold field
gate fermi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU94996/98A
Inventor
Michael W. Dennen
William R. Richards Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thunderbird Technologies Inc
Original Assignee
Thunderbird Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thunderbird Technologies Inc filed Critical Thunderbird Technologies Inc
Publication of AU9499698A publication Critical patent/AU9499698A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AU94996/98A 1997-09-26 1998-09-22 Metal gate fermi-threshold field effect transistors Abandoned AU9499698A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US93821397A 1997-09-26 1997-09-26
US08938213 1997-09-26
PCT/US1998/019761 WO1999017371A1 (en) 1997-09-26 1998-09-22 Metal gate fermi-threshold field effect transistors

Publications (1)

Publication Number Publication Date
AU9499698A true AU9499698A (en) 1999-04-23

Family

ID=25471111

Family Applications (1)

Application Number Title Priority Date Filing Date
AU94996/98A Abandoned AU9499698A (en) 1997-09-26 1998-09-22 Metal gate fermi-threshold field effect transistors

Country Status (4)

Country Link
JP (1) JP2002527882A (en)
AU (1) AU9499698A (en)
TW (1) TW432636B (en)
WO (1) WO1999017371A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU6918300A (en) * 1999-09-24 2001-04-30 Intel Corporation A nonvolatile memory device with a high work function floating-gate and method of fabrication
US6518618B1 (en) 1999-12-03 2003-02-11 Intel Corporation Integrated memory cell and method of fabrication
US6555872B1 (en) * 2000-11-22 2003-04-29 Thunderbird Technologies, Inc. Trench gate fermi-threshold field effect transistors
US6888739B2 (en) * 2002-06-21 2005-05-03 Micron Technology Inc. Nanocrystal write once read only memory for archival storage
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54129983A (en) * 1978-03-31 1979-10-08 Fujitsu Ltd Manufacture of semiconductor device
JPS54129984A (en) * 1978-03-31 1979-10-08 Fujitsu Ltd Manufacture of semiconductor device
JPS54129982A (en) * 1978-03-31 1979-10-08 Fujitsu Ltd Semiconductor device
JPH0620129B2 (en) * 1980-01-14 1994-03-16 株式会社半導体エネルギー研究所 Semiconductor device
JPS62219966A (en) * 1986-03-22 1987-09-28 Toshiba Corp Semiconductor device
US4990974A (en) * 1989-03-02 1991-02-05 Thunderbird Technologies, Inc. Fermi threshold field effect transistor
JP3043791B2 (en) * 1990-09-28 2000-05-22 株式会社東芝 Method for manufacturing semiconductor device
US5369295A (en) * 1992-01-28 1994-11-29 Thunderbird Technologies, Inc. Fermi threshold field effect transistor with reduced gate and diffusion capacitance
JPH04348531A (en) * 1991-05-27 1992-12-03 Oki Electric Ind Co Ltd Manufacture of field effect transistor
US5814869A (en) * 1992-01-28 1998-09-29 Thunderbird Technologies, Inc. Short channel fermi-threshold field effect transistors
DE69429656T2 (en) * 1993-02-23 2002-10-17 Thunderbird Tech Inc FERMI THRESHOLD VOLTAGE FIELD EFFECT TRANSISTOR WITH HIGH SATURATION CURRENT AND LOW LEAKAGE CURRENT
JPH09321276A (en) * 1996-05-28 1997-12-12 Fujitsu Ltd Insulated gate electric field-effect transistor

Also Published As

Publication number Publication date
TW432636B (en) 2001-05-01
JP2002527882A (en) 2002-08-27
WO1999017371A1 (en) 1999-04-08

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase