TW253068B - - Google Patents
Info
- Publication number
- TW253068B TW253068B TW083103574A TW83103574A TW253068B TW 253068 B TW253068 B TW 253068B TW 083103574 A TW083103574 A TW 083103574A TW 83103574 A TW83103574 A TW 83103574A TW 253068 B TW253068 B TW 253068B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/055,999 US5468666A (en) | 1993-04-29 | 1993-04-29 | Using a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chip |
Publications (1)
Publication Number | Publication Date |
---|---|
TW253068B true TW253068B (zh) | 1995-08-01 |
Family
ID=22001494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083103574A TW253068B (zh) | 1993-04-29 | 1994-04-22 |
Country Status (6)
Country | Link |
---|---|
US (2) | US5468666A (zh) |
EP (1) | EP0661751B1 (zh) |
JP (1) | JP3513212B2 (zh) |
KR (1) | KR100336277B1 (zh) |
DE (1) | DE69432918T2 (zh) |
TW (1) | TW253068B (zh) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5559044A (en) * | 1992-09-21 | 1996-09-24 | Siliconix Incorporated | BiCDMOS process technology |
US5783850A (en) * | 1995-04-27 | 1998-07-21 | Taiwan Semiconductor Manufacturing Company | Undoped polysilicon gate process for NMOS ESD protection circuits |
US5602410A (en) * | 1995-08-25 | 1997-02-11 | Siemens Aktiengesellschaft | Off-state gate-oxide field reduction in CMOS |
US5547894A (en) * | 1995-12-21 | 1996-08-20 | International Business Machines Corporation | CMOS processing with low and high-current FETs |
JP2924763B2 (ja) * | 1996-02-28 | 1999-07-26 | 日本電気株式会社 | 半導体装置の製造方法 |
US5933740A (en) * | 1996-04-30 | 1999-08-03 | Texas Instruments Incorporated | RTP booster to semiconductor device anneal |
US5950091A (en) * | 1996-12-06 | 1999-09-07 | Advanced Micro Devices, Inc. | Method of making a polysilicon gate conductor of an integrated circuit formed as a sidewall spacer on a sacrificial material |
US5783469A (en) * | 1996-12-10 | 1998-07-21 | Advanced Micro Devices, Inc. | Method for making nitrogenated gate structure for improved transistor performance |
US6010929A (en) * | 1996-12-11 | 2000-01-04 | Texas Instruments Incorporated | Method for forming high voltage and low voltage transistors on the same substrate |
JPH10189762A (ja) | 1996-12-20 | 1998-07-21 | Nec Corp | 半導体装置およびその製造方法 |
KR100220252B1 (ko) * | 1996-12-28 | 1999-09-15 | 김영환 | 반도체 소자의 제조방법 |
US6051459A (en) * | 1997-02-21 | 2000-04-18 | Advanced Micro Devices, Inc. | Method of making N-channel and P-channel IGFETs using selective doping and activation for the N-channel gate |
JP3497059B2 (ja) * | 1997-04-25 | 2004-02-16 | 株式会社リコー | 半導体装置の製造方法 |
US6124174A (en) * | 1997-05-16 | 2000-09-26 | Advanced Micro Devices, Inc. | Spacer structure as transistor gate |
US5953599A (en) * | 1997-06-12 | 1999-09-14 | National Semiconductor Corporation | Method for forming low-voltage CMOS transistors with a thin layer of gate oxide and high-voltage CMOS transistors with a thick layer of gate oxide |
US5866934A (en) * | 1997-06-20 | 1999-02-02 | Advanced Micro Devices, Inc. | Parallel and series-coupled transistors having gate conductors formed on sidewall surfaces of a sacrificial structure |
US5976925A (en) * | 1997-12-01 | 1999-11-02 | Advanced Micro Devices | Process of fabricating a semiconductor devise having asymmetrically-doped active region and gate electrode |
US6133077A (en) | 1998-01-13 | 2000-10-17 | Lsi Logic Corporation | Formation of high-voltage and low-voltage devices on a semiconductor substrate |
US6054354A (en) * | 1998-01-28 | 2000-04-25 | International Business Machines Corporation | High voltage field effect transistors with selective gate depletion |
GB2337158B (en) * | 1998-02-07 | 2003-04-02 | United Semiconductor Corp | Method of fabricating dual voltage mos transistors |
US6093585A (en) * | 1998-05-08 | 2000-07-25 | Lsi Logic Corporation | High voltage tolerant thin film transistor |
JP2000077613A (ja) * | 1998-08-28 | 2000-03-14 | Nec Corp | 半導体装置の製造方法 |
DE69833247D1 (de) | 1998-10-02 | 2006-04-06 | St Microelectronics Srl | Verfahren zur Herstellung eines Mehrpegel ROM Speichers in einem Doppelgate CMOS Prozess und entsprechende ROM Speicherzelle |
EP1024527A3 (en) * | 1998-12-31 | 2001-05-23 | STMicroelectronics S.r.l. | Method for obtaining a multi-value ROM in an EEPROM process flow |
US6576517B1 (en) | 1998-12-31 | 2003-06-10 | Stmicroelectronics S.R.L. | Method for obtaining a multi-level ROM in an EEPROM process flow |
US6214675B1 (en) * | 1999-02-08 | 2001-04-10 | Lucent Technologies Inc. | Method for fabricating a merged integrated circuit device |
US6743679B2 (en) | 1999-03-03 | 2004-06-01 | Koninklijke Philips Electronics N.V. | Integrated circuit devices with high and low voltage components and processes for manufacturing these devices |
US20040207026A1 (en) * | 2002-04-19 | 2004-10-21 | Xi-Wei Lin | Integrated circuit devices with high and voltage components and processes for manufacturing these devices |
US7635618B2 (en) * | 1999-03-03 | 2009-12-22 | Nxp B.V. | Integrated circuit devices with high and low voltage components and processes for manufacturing these devices |
US6362056B1 (en) * | 2000-02-23 | 2002-03-26 | International Business Machines Corporation | Method of making alternative to dual gate oxide for MOSFETs |
JP4811895B2 (ja) * | 2001-05-02 | 2011-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US6472236B1 (en) * | 2001-05-18 | 2002-10-29 | Advanced Micro Devices, Inc. | Determination of effective oxide thickness of a plurality of dielectric materials in a MOS stack |
US6750106B2 (en) * | 2001-11-16 | 2004-06-15 | Altera Corporation | Polysilicon gate doping level variation for reduced leakage current |
JP2003234423A (ja) * | 2002-02-07 | 2003-08-22 | Sony Corp | 半導体装置及びその製造方法 |
US6835622B2 (en) * | 2002-06-04 | 2004-12-28 | Taiwan Semiconductor Manufacturing Co., Ltd | Gate electrode doping method for forming semiconductor integrated circuit microelectronic fabrication with varying effective gate dielectric layer thicknesses |
US6849492B2 (en) * | 2002-07-08 | 2005-02-01 | Micron Technology, Inc. | Method for forming standard voltage threshold and low voltage threshold MOSFET devices |
JP2004207498A (ja) * | 2002-12-25 | 2004-07-22 | Texas Instr Japan Ltd | 半導体装置およびその製造方法 |
EP1437764A1 (en) * | 2003-01-10 | 2004-07-14 | S.O.I. Tec Silicon on Insulator Technologies S.A. | A compliant substrate for a heteroepitaxy, a heteroepitaxial structure and a method for fabricating a compliant substrate |
JP3700708B2 (ja) * | 2003-03-26 | 2005-09-28 | ソニー株式会社 | 半導体装置の製造方法 |
US6890807B2 (en) * | 2003-05-06 | 2005-05-10 | Intel Corporation | Method for making a semiconductor device having a metal gate electrode |
US7112857B2 (en) * | 2004-07-06 | 2006-09-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Devices with different electrical gate dielectric thicknesses but with substantially similar physical configurations |
JP2006049365A (ja) * | 2004-07-30 | 2006-02-16 | Nec Electronics Corp | 半導体装置 |
US7488635B2 (en) * | 2005-10-26 | 2009-02-10 | Freescale Semiconductor, Inc. | Semiconductor structure with reduced gate doping and methods for forming thereof |
JP2007258224A (ja) * | 2006-03-20 | 2007-10-04 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
JP5040387B2 (ja) * | 2007-03-20 | 2012-10-03 | 株式会社デンソー | 半導体装置 |
JP2008244009A (ja) * | 2007-03-26 | 2008-10-09 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JP2009049307A (ja) * | 2007-08-22 | 2009-03-05 | Panasonic Corp | 半導体装置及びその製造方法 |
US7812408B1 (en) * | 2007-10-16 | 2010-10-12 | Altera Corporation | Integrated circuits with metal-oxide-semiconductor transistors having enhanced gate depletion layers |
KR100943500B1 (ko) | 2007-12-27 | 2010-02-22 | 주식회사 동부하이텍 | 반도체 소자 동시 제조 방법 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH657712A5 (de) * | 1978-03-08 | 1986-09-15 | Hitachi Ltd | Referenzspannungserzeuger. |
US4559694A (en) * | 1978-09-13 | 1985-12-24 | Hitachi, Ltd. | Method of manufacturing a reference voltage generator device |
US4472871A (en) * | 1978-09-21 | 1984-09-25 | Mostek Corporation | Method of making a plurality of MOSFETs having different threshold voltages |
JPH07101677B2 (ja) * | 1985-12-02 | 1995-11-01 | 株式会社東芝 | 半導体装置の製造方法 |
US5214298A (en) * | 1986-09-30 | 1993-05-25 | Texas Instruments Incorporated | Complementary heterostructure field effect transistors |
GB8820058D0 (en) * | 1988-08-24 | 1988-09-28 | Inmos Ltd | Mosfet & fabrication method |
JP2672607B2 (ja) * | 1988-11-22 | 1997-11-05 | 株式会社東芝 | 半導体装置の製造方法 |
US5047358A (en) * | 1989-03-17 | 1991-09-10 | Delco Electronics Corporation | Process for forming high and low voltage CMOS transistors on a single integrated circuit chip |
US5183773A (en) * | 1989-04-13 | 1993-02-02 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device including such input protection transistor |
DE69006978T2 (de) * | 1989-08-24 | 1994-06-09 | Delco Electronics Corp | MOSFET-Verarmungsanordnung. |
JPH03184370A (ja) * | 1989-12-13 | 1991-08-12 | Sharp Corp | 半導体装置 |
JPH03192761A (ja) * | 1989-12-21 | 1991-08-22 | Matsushita Electron Corp | 半導体装置 |
US5234853A (en) * | 1990-03-05 | 1993-08-10 | Fujitsu Limited | Method of producing a high voltage MOS transistor |
JPH0456354A (ja) * | 1990-06-26 | 1992-02-24 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
KR920020763A (ko) * | 1991-04-19 | 1992-11-21 | 김광호 | 반도체장치 및 그 제조방법 |
-
1993
- 1993-04-29 US US08/055,999 patent/US5468666A/en not_active Expired - Lifetime
-
1994
- 1994-04-14 EP EP94105790A patent/EP0661751B1/en not_active Expired - Lifetime
- 1994-04-14 DE DE69432918T patent/DE69432918T2/de not_active Expired - Fee Related
- 1994-04-22 TW TW083103574A patent/TW253068B/zh active
- 1994-04-28 JP JP09253594A patent/JP3513212B2/ja not_active Expired - Fee Related
- 1994-04-29 KR KR1019940009247A patent/KR100336277B1/ko not_active IP Right Cessation
-
1996
- 1996-08-14 US US08/698,251 patent/US6348719B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0661751B1 (en) | 2003-07-09 |
JPH07130870A (ja) | 1995-05-19 |
DE69432918T2 (de) | 2004-02-26 |
KR100336277B1 (ko) | 2002-11-27 |
JP3513212B2 (ja) | 2004-03-31 |
US6348719B1 (en) | 2002-02-19 |
EP0661751A1 (en) | 1995-07-05 |
US5468666A (en) | 1995-11-21 |
DE69432918D1 (de) | 2003-08-14 |