KR100335297B1 - 포토 마스크, 포토 마스크의 제조 방법, 및 반도체 집적 회로 장치의 제조 방법 - Google Patents

포토 마스크, 포토 마스크의 제조 방법, 및 반도체 집적 회로 장치의 제조 방법 Download PDF

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Publication number
KR100335297B1
KR100335297B1 KR1019990037299A KR19990037299A KR100335297B1 KR 100335297 B1 KR100335297 B1 KR 100335297B1 KR 1019990037299 A KR1019990037299 A KR 1019990037299A KR 19990037299 A KR19990037299 A KR 19990037299A KR 100335297 B1 KR100335297 B1 KR 100335297B1
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KR
South Korea
Prior art keywords
photomask
light shielding
phase shift
pattern
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019990037299A
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English (en)
Korean (ko)
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KR20000052320A (ko
Inventor
가몬가즈야
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR20000052320A publication Critical patent/KR20000052320A/ko
Application granted granted Critical
Publication of KR100335297B1 publication Critical patent/KR100335297B1/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019990037299A 1999-01-13 1999-09-03 포토 마스크, 포토 마스크의 제조 방법, 및 반도체 집적 회로 장치의 제조 방법 Expired - Fee Related KR100335297B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP695699A JP2000206671A (ja) 1999-01-13 1999-01-13 フォトマスク、フォトマスクの製造方法、および半導体集積回路装置の製造方法
JP99-006956 1999-01-13

Publications (2)

Publication Number Publication Date
KR20000052320A KR20000052320A (ko) 2000-08-16
KR100335297B1 true KR100335297B1 (ko) 2002-05-03

Family

ID=11652689

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990037299A Expired - Fee Related KR100335297B1 (ko) 1999-01-13 1999-09-03 포토 마스크, 포토 마스크의 제조 방법, 및 반도체 집적 회로 장치의 제조 방법

Country Status (4)

Country Link
US (1) US6737198B2 (https=)
JP (1) JP2000206671A (https=)
KR (1) KR100335297B1 (https=)
DE (1) DE19941408A1 (https=)

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US20020155389A1 (en) * 2000-10-24 2002-10-24 Bharath Rangarajan Inverse resist coating process
JP4497263B2 (ja) * 2000-11-20 2010-07-07 信越化学工業株式会社 フォトマスクブランクス及びその製造方法
KR100604814B1 (ko) * 2002-11-11 2006-07-28 삼성전자주식회사 위상 에지 위상 반전 마스크 및 그 제조방법
JP2004294990A (ja) * 2003-03-28 2004-10-21 Semiconductor Leading Edge Technologies Inc 位相シフトマスク、位相シフトマスクの製造方法及び露光方法
US20050130048A1 (en) * 2003-11-10 2005-06-16 Tomoyuki Nakano Electro-optic device substrate and method for manufacturing the same electro-optic device and method for manufacturing the same, photomask, and electronic device
US20080055581A1 (en) * 2004-04-27 2008-03-06 Rogers John A Devices and methods for pattern generation by ink lithography
DE102004021415B4 (de) * 2004-04-30 2007-03-22 Infineon Technologies Ag Verfahren zum Strukturbelichten einer photoreaktiven Schicht und zugehörige Be lichtungsvorrichtung
US20060216614A1 (en) * 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method of mask making and structure thereof for improving mask ESD immunity
WO2007013162A1 (ja) 2005-07-28 2007-02-01 Fujitsu Limited フォトマスクおよびその製造方法、電子装置の製造方法
US7604906B1 (en) * 2005-09-21 2009-10-20 Kla- Tencor Technologies Corporation Films for prevention of crystal growth on fused silica substrates for semiconductor lithography
JP4345821B2 (ja) * 2007-01-22 2009-10-14 エルピーダメモリ株式会社 露光用マスク及びパターン形成方法
KR100947550B1 (ko) * 2008-09-24 2010-03-12 위아코퍼레이션 주식회사 레이저 반사형 마스크 및 그 제조방법
KR20100127664A (ko) * 2009-05-26 2010-12-06 주식회사 하이닉스반도체 바이너리 블랭크를 이용한 위상반전마스크 형성방법
EP2474999B1 (en) * 2009-09-02 2014-12-17 Wi-A Corporation Laser-reflective mask and method for manufacturing same
JP6728919B2 (ja) * 2015-04-14 2020-07-22 大日本印刷株式会社 フォトマスクおよびフォトマスクの製造方法
JP2018036567A (ja) * 2016-09-01 2018-03-08 株式会社ディスコ ウエーハ加工用フォトマスクの製造方法
CN113296352B (zh) * 2020-02-22 2023-01-24 长鑫存储技术有限公司 应用于半导体光刻工艺中的掩膜图形及光刻工艺方法

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JPH01200258A (ja) * 1988-02-04 1989-08-11 Hitachi Ltd 厚さ分布を有するレジストパターンの形成方法
JPH045655A (ja) * 1990-04-23 1992-01-09 Mitsubishi Electric Corp 位相シフトマスク及びその作成方法

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EP0090924B1 (en) 1982-04-05 1987-11-11 International Business Machines Corporation Method of increasing the image resolution of a transmitting mask and improved masks for performing the method
JPH0690506B2 (ja) 1985-09-20 1994-11-14 株式会社日立製作所 ホトマスク
JPH0690505B2 (ja) 1985-09-20 1994-11-14 株式会社日立製作所 ホトマスク
US4902899A (en) 1987-06-01 1990-02-20 International Business Machines Corporation Lithographic process having improved image quality
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JPH03263045A (ja) 1990-03-14 1991-11-22 Fujitsu Ltd フォトリソグラフィ用マスク及びその製造方法
JPH04355448A (ja) * 1991-06-03 1992-12-09 Fujitsu Ltd レチクル及びその製造方法
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JPH0695354A (ja) * 1992-09-10 1994-04-08 Fujitsu Ltd 光学マスク
JPH06289593A (ja) * 1993-04-02 1994-10-18 Nippon Steel Corp マスクの製造方法
JPH06301194A (ja) 1993-04-15 1994-10-28 Hitachi Ltd フォトマスクの製造方法およびフォトマスク
JPH06308715A (ja) * 1993-04-27 1994-11-04 Sony Corp 位相シフト露光マスクの形成方法、位相シフト露光マスク、及び位相シフト露光方法
JPH07159969A (ja) * 1993-12-01 1995-06-23 Hitachi Ltd 位相シフトマスクおよびその製造方法
KR0151427B1 (ko) * 1994-03-04 1999-02-18 문정환 위상 반전마스크 및 그의 제조방법
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JP3335092B2 (ja) * 1996-12-20 2002-10-15 シャープ株式会社 フォトマスクの製造方法
JP2904170B2 (ja) * 1996-12-27 1999-06-14 日本電気株式会社 ハーフトーン位相シフトマスク及びハーフトーン位相シフトマスクの欠陥修正方法
KR100244482B1 (ko) * 1997-06-21 2000-03-02 김영환 위상 반전 마스크 제조 방법
JPH1126355A (ja) * 1997-07-07 1999-01-29 Toshiba Corp 露光用マスク及びその製造方法
US6037083A (en) * 1998-12-22 2000-03-14 Hoya Corporation Halftone phase shift mask blanks, halftone phase shift masks, and fine pattern forming method
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Publication number Priority date Publication date Assignee Title
JPH01200258A (ja) * 1988-02-04 1989-08-11 Hitachi Ltd 厚さ分布を有するレジストパターンの形成方法
JPH045655A (ja) * 1990-04-23 1992-01-09 Mitsubishi Electric Corp 位相シフトマスク及びその作成方法

Also Published As

Publication number Publication date
JP2000206671A (ja) 2000-07-28
US20010049062A1 (en) 2001-12-06
KR20000052320A (ko) 2000-08-16
DE19941408A1 (de) 2000-07-27
US6737198B2 (en) 2004-05-18

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