KR100333266B1 - 반도체 집적 회로 - Google Patents

반도체 집적 회로 Download PDF

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Publication number
KR100333266B1
KR100333266B1 KR1019990016286A KR19990016286A KR100333266B1 KR 100333266 B1 KR100333266 B1 KR 100333266B1 KR 1019990016286 A KR1019990016286 A KR 1019990016286A KR 19990016286 A KR19990016286 A KR 19990016286A KR 100333266 B1 KR100333266 B1 KR 100333266B1
Authority
KR
South Korea
Prior art keywords
voltage
transistor
output
operational amplifier
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990016286A
Other languages
English (en)
Korean (ko)
Other versions
KR19990088103A (ko
Inventor
에토사토시
마츠미야마사토
다키타마사토
나카무라도시카즈
기타모토아야코
가와바타구니노리
가노우히데키
하세가와마사토모
고가도루
이시이유키
Original Assignee
아끼구사 나오유끼
후지쯔 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아끼구사 나오유끼, 후지쯔 가부시끼가이샤 filed Critical 아끼구사 나오유끼
Publication of KR19990088103A publication Critical patent/KR19990088103A/ko
Application granted granted Critical
Publication of KR100333266B1 publication Critical patent/KR100333266B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)
KR1019990016286A 1998-05-07 1999-05-07 반도체 집적 회로 Expired - Fee Related KR100333266B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP12486398 1998-05-07
JP98-124863 1998-05-07
JP99-092781 1999-03-31
JP11092781A JP2000030450A (ja) 1998-05-07 1999-03-31 半導体集積回路

Publications (2)

Publication Number Publication Date
KR19990088103A KR19990088103A (ko) 1999-12-27
KR100333266B1 true KR100333266B1 (ko) 2002-04-24

Family

ID=26434159

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990016286A Expired - Fee Related KR100333266B1 (ko) 1998-05-07 1999-05-07 반도체 집적 회로

Country Status (4)

Country Link
US (1) US6201378B1 (enExample)
JP (1) JP2000030450A (enExample)
KR (1) KR100333266B1 (enExample)
TW (1) TW543182B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3617433B2 (ja) * 2000-09-05 2005-02-02 株式会社デンソー 駆動回路
JP3710703B2 (ja) 2000-11-22 2005-10-26 松下電器産業株式会社 半導体集積回路
US6437638B1 (en) * 2000-11-28 2002-08-20 Micrel, Incorporated Linear two quadrant voltage regulator
KR100370168B1 (ko) * 2000-12-29 2003-02-05 주식회사 하이닉스반도체 비트라인 프리차지 회로
JP2003168290A (ja) * 2001-11-29 2003-06-13 Fujitsu Ltd 電源回路及び半導体装置
JP3960848B2 (ja) * 2002-04-17 2007-08-15 株式会社ルネサステクノロジ 電位発生回路
US6667608B2 (en) * 2002-04-22 2003-12-23 King Billion Electronics Co., Ltd. Low voltage generating circuit
KR100475745B1 (ko) * 2002-10-21 2005-03-10 삼성전자주식회사 반도체 메모리 장치에 적합한 중간 전압 발생기
JP4119773B2 (ja) * 2003-03-06 2008-07-16 松下電器産業株式会社 半導体記憶装置および半導体装置
JP4299596B2 (ja) * 2003-06-30 2009-07-22 エルピーダメモリ株式会社 プレート電圧発生回路
US7142042B1 (en) * 2003-08-29 2006-11-28 National Semiconductor Corporation Nulled error amplifier
KR100605594B1 (ko) * 2003-10-31 2006-07-28 주식회사 하이닉스반도체 파워업신호 발생 장치
US7088139B1 (en) * 2003-12-31 2006-08-08 National Semiconductor Corporation Low power tri-level decoder circuit
USD515955S1 (en) 2004-09-25 2006-02-28 Edwards Grace E Remote control locator device
KR100688539B1 (ko) * 2005-03-23 2007-03-02 삼성전자주식회사 내부전압 발생기
KR100713083B1 (ko) * 2005-03-31 2007-05-02 주식회사 하이닉스반도체 내부전원 생성장치
JP4822941B2 (ja) * 2006-06-12 2011-11-24 株式会社東芝 電源電圧制御回路および半導体集積回路
US7417448B2 (en) * 2006-06-28 2008-08-26 Intel Corporation System to calibrate on-die temperature sensor
KR100859260B1 (ko) * 2006-10-12 2008-09-18 주식회사 하이닉스반도체 메모리 소자의 전압 제공 회로
JP4920398B2 (ja) * 2006-12-20 2012-04-18 株式会社東芝 電圧発生回路
KR100930409B1 (ko) * 2008-03-11 2009-12-08 주식회사 하이닉스반도체 반도체 메모리 장치의 내부 전압 생성 회로
JP4739382B2 (ja) * 2008-09-11 2011-08-03 富士通セミコンダクター株式会社 電圧供給回路および半導体メモリ
KR100930393B1 (ko) * 2008-09-30 2009-12-08 주식회사 하이닉스반도체 내부전압 제어 장치 및 이를 이용한 반도체 메모리 장치
JP5283518B2 (ja) * 2009-01-19 2013-09-04 新電元工業株式会社 電力変換装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5525897A (en) * 1988-05-24 1996-06-11 Dallas Semiconductor Corporation Transistor circuit for use in a voltage to current converter circuit
US5019729A (en) * 1988-07-27 1991-05-28 Kabushiki Kaisha Toshiba TTL to CMOS buffer circuit
US5317254A (en) * 1992-09-17 1994-05-31 Micro Control Company Bipolar power supply
US5554953A (en) * 1992-10-07 1996-09-10 Matsushita Electric Industrial Co., Ltd. Internal reduced-voltage generator for semiconductor integrated circuit
KR0144402B1 (ko) 1994-12-30 1998-08-17 김주용 동작전류 소모를 줄인 반도체 메모리 소자

Also Published As

Publication number Publication date
TW543182B (en) 2003-07-21
KR19990088103A (ko) 1999-12-27
US6201378B1 (en) 2001-03-13
JP2000030450A (ja) 2000-01-28

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