KR100326493B1 - 스택형 전극을 가진 ｄｒａｍ 커패시터 및 그 제조 방법 - Google Patents

스택형 전극을 가진 ｄｒａｍ 커패시터 및 그 제조 방법 Download PDF

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Publication number
KR100326493B1
KR100326493B1 KR1019997002431A KR19997002431A KR100326493B1 KR 100326493 B1 KR100326493 B1 KR 100326493B1 KR 1019997002431 A KR1019997002431 A KR 1019997002431A KR 19997002431 A KR19997002431 A KR 19997002431A KR 100326493 B1 KR100326493 B1 KR 100326493B1
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KR
South Korea
Prior art keywords
electrode
memory
layers
contact
capacitor
Prior art date
Application number
KR1019997002431A
Other languages
English (en)
Korean (ko)
Other versions
KR20000048524A (ko
Inventor
귄터 쉰들러
발터 하르트너
카를로스 마추레-에스페요
Original Assignee
칼 하인쯔 호르닝어
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 칼 하인쯔 호르닝어, 지멘스 악티엔게젤샤프트 filed Critical 칼 하인쯔 호르닝어
Publication of KR20000048524A publication Critical patent/KR20000048524A/ko
Application granted granted Critical
Publication of KR100326493B1 publication Critical patent/KR100326493B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
KR1019997002431A 1996-09-30 1997-09-05 스택형 전극을 가진 ｄｒａｍ 커패시터 및 그 제조 방법 KR100326493B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19640271A DE19640271C1 (de) 1996-09-30 1996-09-30 Verfahren zur Herstellung einer integrierten Halbleiterspeicheranordnung
DE19640271.9 1996-09-30

Publications (2)

Publication Number Publication Date
KR20000048524A KR20000048524A (ko) 2000-07-25
KR100326493B1 true KR100326493B1 (ko) 2002-03-12

Family

ID=7807421

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019997002431A KR100326493B1 (ko) 1996-09-30 1997-09-05 스택형 전극을 가진 ｄｒａｍ 커패시터 및 그 제조 방법

Country Status (8)

Country Link
US (1) US6197633B1 (de)
EP (1) EP0931339B1 (de)
JP (1) JP3359644B2 (de)
KR (1) KR100326493B1 (de)
CN (1) CN1160777C (de)
DE (2) DE19640271C1 (de)
TW (1) TW364201B (de)
WO (1) WO1998015000A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8154847B2 (en) * 2008-09-12 2012-04-10 Mediatek Inc. Capacitor structure
KR101652878B1 (ko) * 2010-02-22 2016-09-01 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2012221965A (ja) 2011-04-04 2012-11-12 Elpida Memory Inc 半導体記憶装置及びその製造方法
JP2018157106A (ja) * 2017-03-17 2018-10-04 東芝メモリ株式会社 記憶装置および容量素子
KR102423766B1 (ko) 2017-07-26 2022-07-21 삼성전자주식회사 3차원 반도체 소자

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920001761A (ko) * 1990-06-29 1992-01-30 김광호 디램셀의 적층형 캐패시터 및 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0815207B2 (ja) * 1986-02-04 1996-02-14 富士通株式会社 半導体記憶装置
JPH0338061A (ja) * 1989-07-05 1991-02-19 Fujitsu Ltd 半導体記憶装置
JPH03153074A (ja) * 1989-11-10 1991-07-01 Mitsubishi Electric Corp 半導体装置
KR920017248A (ko) * 1991-02-18 1992-09-26 문정환 반도체 메모리 소자의 커패시터 제조방법
US5240871A (en) * 1991-09-06 1993-08-31 Micron Technology, Inc. Corrugated storage contact capacitor and method for forming a corrugated storage contact capacitor
US5631184A (en) * 1992-03-13 1997-05-20 Fujitsu Limited Method of producing a semiconductor device having a fin type capacitor
JPH06217959A (ja) * 1993-01-26 1994-08-09 Toshiba Corp 磁気共鳴イメージングにおける位相エンコード量調整法
JPH07161832A (ja) * 1993-12-08 1995-06-23 Oki Electric Ind Co Ltd 半導体記憶装置およびその製造方法
US5744833A (en) * 1996-08-16 1998-04-28 United Microelectronics Corporation Semiconductor memory device having tree-type capacitor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920001761A (ko) * 1990-06-29 1992-01-30 김광호 디램셀의 적층형 캐패시터 및 제조방법

Also Published As

Publication number Publication date
TW364201B (en) 1999-07-11
DE59709521D1 (de) 2003-04-17
EP0931339A1 (de) 1999-07-28
JP2000503812A (ja) 2000-03-28
WO1998015000A1 (de) 1998-04-09
CN1231762A (zh) 1999-10-13
DE19640271C1 (de) 1998-03-05
EP0931339B1 (de) 2003-03-12
CN1160777C (zh) 2004-08-04
US6197633B1 (en) 2001-03-06
JP3359644B2 (ja) 2002-12-24
KR20000048524A (ko) 2000-07-25

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