TW364201B - Method for the production of an integrated semiconductor memory arrangement - Google Patents

Method for the production of an integrated semiconductor memory arrangement

Info

Publication number
TW364201B
TW364201B TW086113734A TW86113734A TW364201B TW 364201 B TW364201 B TW 364201B TW 086113734 A TW086113734 A TW 086113734A TW 86113734 A TW86113734 A TW 86113734A TW 364201 B TW364201 B TW 364201B
Authority
TW
Taiwan
Prior art keywords
production
semiconductor memory
memory arrangement
electrodes
integrated semiconductor
Prior art date
Application number
TW086113734A
Other languages
English (en)
Inventor
Guenther Schinder
Walter Hartner
Carlos Mazure-Espejo
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW364201B publication Critical patent/TW364201B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
TW086113734A 1996-09-30 1997-09-22 Method for the production of an integrated semiconductor memory arrangement TW364201B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19640271A DE19640271C1 (de) 1996-09-30 1996-09-30 Verfahren zur Herstellung einer integrierten Halbleiterspeicheranordnung

Publications (1)

Publication Number Publication Date
TW364201B true TW364201B (en) 1999-07-11

Family

ID=7807421

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086113734A TW364201B (en) 1996-09-30 1997-09-22 Method for the production of an integrated semiconductor memory arrangement

Country Status (8)

Country Link
US (1) US6197633B1 (zh)
EP (1) EP0931339B1 (zh)
JP (1) JP3359644B2 (zh)
KR (1) KR100326493B1 (zh)
CN (1) CN1160777C (zh)
DE (2) DE19640271C1 (zh)
TW (1) TW364201B (zh)
WO (1) WO1998015000A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8154847B2 (en) * 2008-09-12 2012-04-10 Mediatek Inc. Capacitor structure
KR101652878B1 (ko) * 2010-02-22 2016-09-01 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2012221965A (ja) * 2011-04-04 2012-11-12 Elpida Memory Inc 半導体記憶装置及びその製造方法
JP2018157106A (ja) * 2017-03-17 2018-10-04 東芝メモリ株式会社 記憶装置および容量素子
KR102423766B1 (ko) 2017-07-26 2022-07-21 삼성전자주식회사 3차원 반도체 소자

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0815207B2 (ja) * 1986-02-04 1996-02-14 富士通株式会社 半導体記憶装置
JPH0338061A (ja) * 1989-07-05 1991-02-19 Fujitsu Ltd 半導体記憶装置
JPH03153074A (ja) * 1989-11-10 1991-07-01 Mitsubishi Electric Corp 半導体装置
KR930007192B1 (ko) * 1990-06-29 1993-07-31 삼성전자 주식회사 디램셀의 적층형캐패시터 및 제조방법
KR920017248A (ko) * 1991-02-18 1992-09-26 문정환 반도체 메모리 소자의 커패시터 제조방법
US5240871A (en) * 1991-09-06 1993-08-31 Micron Technology, Inc. Corrugated storage contact capacitor and method for forming a corrugated storage contact capacitor
US5631184A (en) * 1992-03-13 1997-05-20 Fujitsu Limited Method of producing a semiconductor device having a fin type capacitor
JPH06217959A (ja) * 1993-01-26 1994-08-09 Toshiba Corp 磁気共鳴イメージングにおける位相エンコード量調整法
JPH07161832A (ja) * 1993-12-08 1995-06-23 Oki Electric Ind Co Ltd 半導体記憶装置およびその製造方法
US5744833A (en) * 1996-08-16 1998-04-28 United Microelectronics Corporation Semiconductor memory device having tree-type capacitor

Also Published As

Publication number Publication date
JP2000503812A (ja) 2000-03-28
KR100326493B1 (ko) 2002-03-12
DE19640271C1 (de) 1998-03-05
CN1231762A (zh) 1999-10-13
CN1160777C (zh) 2004-08-04
WO1998015000A1 (de) 1998-04-09
US6197633B1 (en) 2001-03-06
EP0931339B1 (de) 2003-03-12
KR20000048524A (ko) 2000-07-25
DE59709521D1 (de) 2003-04-17
EP0931339A1 (de) 1999-07-28
JP3359644B2 (ja) 2002-12-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees