KR100297358B1 - 플라즈마에칭장치 - Google Patents

플라즈마에칭장치 Download PDF

Info

Publication number
KR100297358B1
KR100297358B1 KR1019920013069A KR920013069A KR100297358B1 KR 100297358 B1 KR100297358 B1 KR 100297358B1 KR 1019920013069 A KR1019920013069 A KR 1019920013069A KR 920013069 A KR920013069 A KR 920013069A KR 100297358 B1 KR100297358 B1 KR 100297358B1
Authority
KR
South Korea
Prior art keywords
electrode
substrate
plasma etching
etching apparatus
magnetron plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019920013069A
Other languages
English (en)
Korean (ko)
Other versions
KR930003271A (ko
Inventor
하세가와마고또
마쓰시다다까야
호리오까게이지
하세가와이사히로
노자와도시히사
이시가와요시오
히라스까마사히또
가네꼬사또시
Original Assignee
히가시 데쓰로
동경 엘렉트론 주식회사
니시무로 타이죠
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP20740791A external-priority patent/JP3238933B2/ja
Priority claimed from JP3207408A external-priority patent/JP3054638B2/ja
Priority claimed from JP3208445A external-priority patent/JPH0529435A/ja
Priority claimed from JP20844491A external-priority patent/JP2971995B2/ja
Application filed by 히가시 데쓰로, 동경 엘렉트론 주식회사, 니시무로 타이죠, 가부시끼가이샤 도시바 filed Critical 히가시 데쓰로
Publication of KR930003271A publication Critical patent/KR930003271A/ko
Application granted granted Critical
Publication of KR100297358B1 publication Critical patent/KR100297358B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
KR1019920013069A 1991-07-23 1992-07-22 플라즈마에칭장치 Expired - Lifetime KR100297358B1 (ko)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP91-207408 1991-07-23
JP20740991 1991-07-23
JP20740791A JP3238933B2 (ja) 1991-07-23 1991-07-23 マグネトロンプラズマ処理方法
JP91-207409 1991-07-23
JP91-207407 1991-07-23
JP3207408A JP3054638B2 (ja) 1991-07-23 1991-07-23 マグネトロンプラズマ処理装置
JP3208445A JPH0529435A (ja) 1991-07-24 1991-07-24 搬送装置
JP91-208444 1991-07-24
JP91-208445 1991-07-24
JP20844491A JP2971995B2 (ja) 1991-07-24 1991-07-24 搬送装置

Publications (2)

Publication Number Publication Date
KR930003271A KR930003271A (ko) 1993-02-24
KR100297358B1 true KR100297358B1 (ko) 2001-11-30

Family

ID=27529430

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920013069A Expired - Lifetime KR100297358B1 (ko) 1991-07-23 1992-07-22 플라즈마에칭장치

Country Status (5)

Country Link
US (1) US5271788A (enExample)
EP (1) EP0525633B1 (enExample)
KR (1) KR100297358B1 (enExample)
DE (1) DE69231479T2 (enExample)
TW (1) TW239897B (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
JP3172758B2 (ja) * 1993-11-20 2001-06-04 東京エレクトロン株式会社 プラズマエッチング方法
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
JP3124204B2 (ja) * 1994-02-28 2001-01-15 株式会社東芝 プラズマ処理装置
US5639334A (en) * 1995-03-07 1997-06-17 International Business Machines Corporation Uniform gas flow arrangements
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
DE19532100A1 (de) * 1995-08-30 1997-03-06 Leybold Ag Vorrichtung zur Plasmabehandlung von Substraten
US5891348A (en) * 1996-01-26 1999-04-06 Applied Materials, Inc. Process gas focusing apparatus and method
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
US6284093B1 (en) 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
US5976309A (en) * 1996-12-17 1999-11-02 Lsi Logic Corporation Electrode assembly for plasma reactor
BE1011098A3 (fr) * 1997-04-10 1999-04-06 Cockerill Rech & Dev Procede et dispositif de decapage.
WO1999014788A1 (en) * 1997-09-16 1999-03-25 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6165910A (en) * 1997-12-29 2000-12-26 Lam Research Corporation Self-aligned contacts for semiconductor device
US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
JP4394778B2 (ja) * 1999-09-22 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US6494958B1 (en) 2000-06-29 2002-12-17 Applied Materials Inc. Plasma chamber support with coupled electrode
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
JP2002261147A (ja) 2001-03-02 2002-09-13 Seiko Instruments Inc 真空装置および搬送装置
US6554954B2 (en) 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
TWI246873B (en) 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
JP2003100713A (ja) * 2001-09-26 2003-04-04 Kawasaki Microelectronics Kk プラズマ電極用カバー
KR101141488B1 (ko) * 2003-03-21 2012-05-03 도쿄엘렉트론가부시키가이샤 처리중의 기판이면(裏面) 증착 감소방법 및 장치
US20050103274A1 (en) * 2003-11-14 2005-05-19 Cheng-Tsung Yu Reliability assessment system and method
KR101218114B1 (ko) 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
WO2018099690A1 (en) * 2016-12-02 2018-06-07 Asml Netherlands B.V. A method to change an etch parameter
US11702748B2 (en) 2017-03-03 2023-07-18 Lam Research Corporation Wafer level uniformity control in remote plasma film deposition
CN111466009B (zh) * 2017-12-15 2023-07-07 朗姆研究公司 等离子体室中使用的环形结构和系统

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51124379A (en) * 1975-04-23 1976-10-29 Fujitsu Ltd Plasma etching method
JPS5927213A (ja) * 1982-08-09 1984-02-13 Ichiro Ishii 上空より写真撮影や計測を行なう方法
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
JPS60120520A (ja) * 1983-12-02 1985-06-28 Canon Inc 半導体製造用搬送装置
US4891087A (en) * 1984-10-22 1990-01-02 Texas Instruments Incorporated Isolation substrate ring for plasma reactor
US4871420A (en) * 1984-12-18 1989-10-03 American Telephone And Telegraph Company, At&T Bell Laboratories Selective etching process
US4552369A (en) * 1984-12-24 1985-11-12 Gray Tool Company Stem sealing for high pressure valve
US4572759A (en) * 1984-12-26 1986-02-25 Benzing Technology, Inc. Troide plasma reactor with magnetic enhancement
US4793975A (en) * 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
DE3678612D1 (de) * 1985-05-20 1991-05-16 Tegal Corp Plasmareaktor mit entnehmbarem einsatz.
JPS61278149A (ja) * 1985-06-03 1986-12-09 Canon Inc ウエハ位置決め装置
JPS6216167A (ja) * 1985-07-15 1987-01-24 Canon Inc プリンタ
JPS6221644A (ja) * 1985-07-22 1987-01-30 Canon Inc ウエハ搬送装置
JPS62150735A (ja) * 1985-12-25 1987-07-04 Canon Inc ウエハ搬送装置
KR910005733B1 (ko) * 1986-01-17 1991-08-02 가부시기가이샤 히다찌 세이사꾸쇼 플라즈마 처리방법 및 장치
JPS63224232A (ja) * 1987-03-13 1988-09-19 Hitachi Ltd プラズマ処理方法および装置
US4878995A (en) * 1987-07-02 1989-11-07 Kabushiki Kaisha Toshiba Method of dry etching and apparatus for use in such method
JPH0618182B2 (ja) * 1987-08-05 1994-03-09 松下電器産業株式会社 ドライエッチング装置
JPH0730468B2 (ja) * 1988-06-09 1995-04-05 日電アネルバ株式会社 ドライエッチング装置
JP2892787B2 (ja) * 1990-07-20 1999-05-17 東京エレクトロン株式会社 電気信号の抽出方法

Also Published As

Publication number Publication date
DE69231479D1 (de) 2000-11-02
KR930003271A (ko) 1993-02-24
EP0525633A1 (en) 1993-02-03
DE69231479T2 (de) 2001-04-26
US5271788A (en) 1993-12-21
EP0525633B1 (en) 2000-09-27
TW239897B (enExample) 1995-02-01

Similar Documents

Publication Publication Date Title
KR100297358B1 (ko) 플라즈마에칭장치
US4431473A (en) RIE Apparatus utilizing a shielded magnetron to enhance etching
JP5759177B2 (ja) プラズマ処理装置、半導体基板を処理する方法、および軸直角変位ベローズユニット
US4838978A (en) Dry etching apparatus
KR100270398B1 (ko) 플라즈마 처리장치
KR19980024574A (ko) 플라즈마 처리 장치
US20040149214A1 (en) Vacuum processing apparatus
JPH0693447B2 (ja) マイクロ波プラズマ処理装置
JPS59175125A (ja) ドライエツチング装置
JP4286576B2 (ja) プラズマ処理装置
JP3260168B2 (ja) プラズマ処理装置
JP3170319B2 (ja) マグネトロンプラズマ処理装置
CN110189975B (zh) 一种离子束刻蚀腔体清洗装置
JP3281545B2 (ja) プラズマ処理装置
JPS607132A (ja) ドライエツチング装置
JP4657521B2 (ja) プラズマ処理装置
JPH051072Y2 (enExample)
JP3239168B2 (ja) プラズマ処理装置
JPH0578171B2 (enExample)
JPH0691021B2 (ja) 真空槽内における基板ホルダ−などのクリ−ニング方法及び装置
JPH0536641A (ja) 半導体製造装置
JPS58123879A (ja) プラズマエツチング装置
JP3238933B2 (ja) マグネトロンプラズマ処理方法
JPS6342707B2 (enExample)
JPS61260634A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20120507

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

EXPY Expiration of term
PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20120723

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000