KR100284467B1 - Dram센싱을위한셀플레이트기준화 - Google Patents

Dram센싱을위한셀플레이트기준화 Download PDF

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Publication number
KR100284467B1
KR100284467B1 KR1019970709066A KR19970709066A KR100284467B1 KR 100284467 B1 KR100284467 B1 KR 100284467B1 KR 1019970709066 A KR1019970709066 A KR 1019970709066A KR 19970709066 A KR19970709066 A KR 19970709066A KR 100284467 B1 KR100284467 B1 KR 100284467B1
Authority
KR
South Korea
Prior art keywords
digit line
node
sense amplifier
transistor
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970709066A
Other languages
English (en)
Korean (ko)
Other versions
KR19990022585A (ko
Inventor
머마지드 세이예디
Original Assignee
로데릭 더블류 루이스
마이크론 테크놀로지, 인크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 로데릭 더블류 루이스, 마이크론 테크놀로지, 인크 filed Critical 로데릭 더블류 루이스
Publication of KR19990022585A publication Critical patent/KR19990022585A/ko
Application granted granted Critical
Publication of KR100284467B1 publication Critical patent/KR100284467B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Transceivers (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Semiconductor Memories (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Debugging And Monitoring (AREA)
KR1019970709066A 1995-06-06 1996-06-04 Dram센싱을위한셀플레이트기준화 Expired - Fee Related KR100284467B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/471,861 1995-06-06
US08/471,861 US5719813A (en) 1995-06-06 1995-06-06 Cell plate referencing for DRAM sensing
PCT/US1996/009070 WO1996039698A1 (en) 1995-06-06 1996-06-04 Cell plate referencing for dram sensing

Publications (2)

Publication Number Publication Date
KR19990022585A KR19990022585A (ko) 1999-03-25
KR100284467B1 true KR100284467B1 (ko) 2001-03-02

Family

ID=23873269

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970709066A Expired - Fee Related KR100284467B1 (ko) 1995-06-06 1996-06-04 Dram센싱을위한셀플레이트기준화

Country Status (9)

Country Link
US (2) US5719813A (enExample)
EP (1) EP0886865B1 (enExample)
JP (1) JP3357898B2 (enExample)
KR (1) KR100284467B1 (enExample)
AT (1) ATE206556T1 (enExample)
AU (1) AU6048996A (enExample)
DE (1) DE69615712T2 (enExample)
TW (1) TW307011B (enExample)
WO (1) WO1996039698A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719813A (en) * 1995-06-06 1998-02-17 Micron Technology, Inc. Cell plate referencing for DRAM sensing
US5901078A (en) * 1997-06-19 1999-05-04 Micron Technology, Inc. Variable voltage isolation gate and method
US6292387B1 (en) 2000-01-20 2001-09-18 Micron Technology, Inc. Selective device coupling
US6301175B1 (en) 2000-07-26 2001-10-09 Micron Technology, Inc. Memory device with single-ended sensing and low voltage pre-charge
US6292417B1 (en) 2000-07-26 2001-09-18 Micron Technology, Inc. Memory device with reduced bit line pre-charge voltage
DE10302650B4 (de) * 2003-01-23 2007-08-30 Infineon Technologies Ag RAM-Speicher und Steuerungsverfahren dafür
US7372092B2 (en) * 2005-05-05 2008-05-13 Micron Technology, Inc. Memory cell, device, and system
US12347476B1 (en) * 2022-12-27 2025-07-01 Kepler Computing Inc. Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4598387A (en) 1983-09-29 1986-07-01 Advanced Micro Devices, Inc. Capacitive memory signal doubler cell
JPS60239993A (ja) * 1984-05-12 1985-11-28 Sharp Corp ダイナミツク型半導体記憶装置
US4715015A (en) * 1984-06-01 1987-12-22 Sharp Kabushiki Kaisha Dynamic semiconductor memory with improved sense signal
JPS6177193A (ja) * 1984-09-25 1986-04-19 Toshiba Corp ダイナミツク型メモリ
JPS62184691A (ja) * 1986-02-08 1987-08-13 Fujitsu Ltd 半導体記憶装置
JPH0336763A (ja) * 1989-07-03 1991-02-18 Hitachi Ltd 半導体集積回路装置
US5241503A (en) * 1991-02-25 1993-08-31 Motorola, Inc. Dynamic random access memory with improved page-mode performance and method therefor having isolator between memory cells and sense amplifiers
JPH05159575A (ja) * 1991-12-04 1993-06-25 Oki Electric Ind Co Ltd ダイナミックランダムアクセスメモリ
JPH05182458A (ja) * 1991-12-26 1993-07-23 Toshiba Corp 半導体記憶装置
JPH05242672A (ja) * 1992-02-04 1993-09-21 Nec Corp 半導体ダイナミックメモリ
KR950009234B1 (ko) * 1992-02-19 1995-08-18 삼성전자주식회사 반도체 메모리장치의 비트라인 분리클럭 발생장치
JP3020345B2 (ja) * 1992-05-19 2000-03-15 株式会社 沖マイクロデザイン 半導体記憶回路
JPH06215564A (ja) * 1993-01-13 1994-08-05 Nec Corp 半導体記憶装置
JPH0785675A (ja) * 1993-09-17 1995-03-31 Mitsubishi Electric Corp 半導体記憶装置
US5719813A (en) * 1995-06-06 1998-02-17 Micron Technology, Inc. Cell plate referencing for DRAM sensing
US5648749A (en) * 1995-09-19 1997-07-15 Lin; Kuang Ts'an Cartridge fuse mounting structure

Also Published As

Publication number Publication date
AU6048996A (en) 1996-12-24
TW307011B (enExample) 1997-06-01
DE69615712T2 (de) 2002-04-18
US5719813A (en) 1998-02-17
US5894444A (en) 1999-04-13
KR19990022585A (ko) 1999-03-25
EP0886865A1 (en) 1998-12-30
EP0886865B1 (en) 2001-10-04
WO1996039698A1 (en) 1996-12-12
JPH10507863A (ja) 1998-07-28
ATE206556T1 (de) 2001-10-15
JP3357898B2 (ja) 2002-12-16
DE69615712D1 (de) 2001-11-08

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