KR100284019B1 - 그리드어레이마스킹테이프공정 - Google Patents

그리드어레이마스킹테이프공정 Download PDF

Info

Publication number
KR100284019B1
KR100284019B1 KR1019940006353A KR19940006353A KR100284019B1 KR 100284019 B1 KR100284019 B1 KR 100284019B1 KR 1019940006353 A KR1019940006353 A KR 1019940006353A KR 19940006353 A KR19940006353 A KR 19940006353A KR 100284019 B1 KR100284019 B1 KR 100284019B1
Authority
KR
South Korea
Prior art keywords
adhesive
wafer
sawing
chip
segments
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940006353A
Other languages
English (en)
Korean (ko)
Other versions
KR940022721A (ko
Inventor
라파엘씨.알파로
데이비드블레어
Original Assignee
윌리엄 비. 켐플러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 비. 켐플러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 비. 켐플러
Publication of KR940022721A publication Critical patent/KR940022721A/ko
Application granted granted Critical
Publication of KR100284019B1 publication Critical patent/KR100284019B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H10P95/00—
    • H10P72/74—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H10P50/00—
    • H10P52/00—
    • H10P54/00—
    • H10P72/7402—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H10P72/7416—
    • H10P72/7422—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
    • Y10T156/1062—Prior to assembly
    • Y10T156/1064—Partial cutting [e.g., grooving or incising]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2839—Web or sheet containing structurally defined element or component and having an adhesive outermost layer with release or antistick coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1019940006353A 1993-03-29 1994-03-29 그리드어레이마스킹테이프공정 Expired - Fee Related KR100284019B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/038,779 US5435876A (en) 1993-03-29 1993-03-29 Grid array masking tape process
US8/038,779 1993-03-29
US08/038,779 1993-03-29

Publications (2)

Publication Number Publication Date
KR940022721A KR940022721A (ko) 1994-10-21
KR100284019B1 true KR100284019B1 (ko) 2001-11-30

Family

ID=21901848

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940006353A Expired - Fee Related KR100284019B1 (ko) 1993-03-29 1994-03-29 그리드어레이마스킹테이프공정

Country Status (8)

Country Link
US (1) US5435876A (enExample)
EP (1) EP0661737B1 (enExample)
JP (1) JPH0799172A (enExample)
KR (1) KR100284019B1 (enExample)
CN (1) CN1043594C (enExample)
CA (1) CA2119505A1 (enExample)
DE (1) DE69419489T2 (enExample)
TW (1) TW249298B (enExample)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6219015B1 (en) 1992-04-28 2001-04-17 The Board Of Directors Of The Leland Stanford, Junior University Method and apparatus for using an array of grating light valves to produce multicolor optical images
US5597767A (en) * 1995-01-06 1997-01-28 Texas Instruments Incorporated Separation of wafer into die with wafer-level processing
US5841579A (en) 1995-06-07 1998-11-24 Silicon Light Machines Flat diffraction grating light valve
JP3496347B2 (ja) * 1995-07-13 2004-02-09 株式会社デンソー 半導体装置及びその製造方法
US5668062A (en) * 1995-08-23 1997-09-16 Texas Instruments Incorporated Method for processing semiconductor wafer with reduced particle contamination during saw
US5872046A (en) * 1996-04-10 1999-02-16 Texas Instruments Incorporated Method of cleaning wafer after partial saw
US6686291B1 (en) 1996-05-24 2004-02-03 Texas Instruments Incorporated Undercut process with isotropic plasma etching at package level
JPH1027971A (ja) * 1996-07-10 1998-01-27 Nec Corp 有機薄膜多層配線基板の切断方法
DE59705221D1 (de) * 1996-08-14 2001-12-06 Osram Opto Semiconductors Gmbh Verfahren zum trennen einer halbleiterscheibe
JP3584635B2 (ja) 1996-10-04 2004-11-04 株式会社デンソー 半導体装置及びその製造方法
JP3695494B2 (ja) 1996-11-13 2005-09-14 セイコーエプソン株式会社 光変調デバイス、その製造方法および表示装置
EP1014142B1 (en) * 1996-11-13 2002-09-25 Seiko Epson Corporation Method of producing light modulation device and projector
HUP9701377A3 (en) * 1997-01-15 2000-01-28 Ibm Case and method for mouting an ic chip onto a carrier board or similar
US5982553A (en) 1997-03-20 1999-11-09 Silicon Light Machines Display device incorporating one-dimensional grating light-valve array
US5817569A (en) * 1997-05-08 1998-10-06 Texas Instruments Incorporated Method of reducing wafer particles after partial saw
US5753563A (en) * 1997-07-30 1998-05-19 Chartered Semiconductor Manufacturing Ltd. Method of removing particles by adhesive
KR19990017672A (ko) * 1997-08-25 1999-03-15 윤종용 반도체 칩 패키지 제조 방법
JP3097619B2 (ja) * 1997-10-02 2000-10-10 日本電気株式会社 電界放射冷陰極の製造方法
US6088102A (en) 1997-10-31 2000-07-11 Silicon Light Machines Display apparatus including grating light-valve array and interferometric optical system
JP3846094B2 (ja) 1998-03-17 2006-11-15 株式会社デンソー 半導体装置の製造方法
US6319075B1 (en) * 1998-04-17 2001-11-20 Fci Americas Technology, Inc. Power connector
US20020098743A1 (en) 1998-04-17 2002-07-25 Schell Mark S. Power connector
US7314377B2 (en) 1998-04-17 2008-01-01 Fci Americas Technology, Inc. Electrical power connector
US6271808B1 (en) 1998-06-05 2001-08-07 Silicon Light Machines Stereo head mounted display using a single display device
US6130770A (en) 1998-06-23 2000-10-10 Silicon Light Machines Electron gun activated grating light valve
US6101036A (en) 1998-06-23 2000-08-08 Silicon Light Machines Embossed diffraction grating alone and in combination with changeable image display
US6215579B1 (en) 1998-06-24 2001-04-10 Silicon Light Machines Method and apparatus for modulating an incident light beam for forming a two-dimensional image
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
US6872984B1 (en) 1998-07-29 2005-03-29 Silicon Light Machines Corporation Method of sealing a hermetic lid to a semiconductor die at an angle
JP3661444B2 (ja) * 1998-10-28 2005-06-15 株式会社ルネサステクノロジ 半導体装置、半導体ウエハ、半導体モジュールおよび半導体装置の製造方法
JP2000223446A (ja) 1998-11-27 2000-08-11 Denso Corp 半導体装置およびその製造方法
DE19906209C2 (de) * 1999-02-15 2003-03-20 Possehl Electronic Gmbh Verfahren zum Heraustrennen einzelner Schaltkreis-Einheiten aus einem Panel
JP4151164B2 (ja) * 1999-03-19 2008-09-17 株式会社デンソー 半導体装置の製造方法
US6413150B1 (en) * 1999-05-27 2002-07-02 Texas Instruments Incorporated Dual dicing saw blade assembly and process for separating devices arrayed a substrate
JP3303294B2 (ja) * 1999-06-11 2002-07-15 株式会社東京精密 半導体保護テープの切断方法
DE19962231A1 (de) * 1999-12-22 2001-07-12 Infineon Technologies Ag Verfahren zur Herstellung mikromechanischer Strukturen
US6956878B1 (en) 2000-02-07 2005-10-18 Silicon Light Machines Corporation Method and apparatus for reducing laser speckle using polarization averaging
US6425971B1 (en) * 2000-05-10 2002-07-30 Silverbrook Research Pty Ltd Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes
KR100332967B1 (ko) * 2000-05-10 2002-04-19 윤종용 디지털 마이크로-미러 디바이스 패키지의 제조 방법
US6335224B1 (en) 2000-05-16 2002-01-01 Sandia Corporation Protection of microelectronic devices during packaging
US6383833B1 (en) 2000-05-23 2002-05-07 Silverbrook Research Pty Ltd. Method of fabricating devices incorporating microelectromechanical systems using at least one UV curable tape
AU2000247318B2 (en) * 2000-05-24 2005-05-05 Memjet Technology Limited Method of fabricating devices incorporating microelectromechanical systems using at least one UV curable tape
SG143050A1 (en) * 2000-05-24 2008-06-27 Silverbrook Res Pty Ltd Method of fabricating micro-electromechanical devices with protective structures
JP4258105B2 (ja) 2000-06-27 2009-04-30 株式会社デンソー 半導体装置の製造方法
WO2002074686A2 (en) 2000-12-05 2002-09-26 Analog Devices, Inc. A method and device for protecting micro electromechanical systems structures during dicing of a wafer
US6610167B1 (en) * 2001-01-16 2003-08-26 Amkor Technology, Inc. Method for fabricating a special-purpose die using a polymerizable tape
US6572944B1 (en) 2001-01-16 2003-06-03 Amkor Technology, Inc. Structure for fabricating a special-purpose die using a polymerizable tape
US6420206B1 (en) * 2001-01-30 2002-07-16 Axsun Technologies, Inc. Optical membrane singulation process utilizing backside and frontside protective coating during die saw
US7177081B2 (en) 2001-03-08 2007-02-13 Silicon Light Machines Corporation High contrast grating light valve type device
US6580153B1 (en) * 2001-03-14 2003-06-17 Amkor Technology, Inc. Structure for protecting a micromachine with a cavity in a UV tape
US6707591B2 (en) 2001-04-10 2004-03-16 Silicon Light Machines Angled illumination for a single order light modulator based projection system
US6982184B2 (en) 2001-05-02 2006-01-03 Silverbrook Research Pty Ltd Method of fabricating MEMS devices on a silicon wafer
US6865346B1 (en) 2001-06-05 2005-03-08 Silicon Light Machines Corporation Fiber optic transceiver
US6747781B2 (en) 2001-06-25 2004-06-08 Silicon Light Machines, Inc. Method, apparatus, and diffuser for reducing laser speckle
US6782205B2 (en) 2001-06-25 2004-08-24 Silicon Light Machines Method and apparatus for dynamic equalization in wavelength division multiplexing
DE10137666A1 (de) * 2001-08-01 2003-02-27 Infineon Technologies Ag Schutzvorrichtung für Baugruppen und Verfahren zu ihrer Herstellung
US6829092B2 (en) 2001-08-15 2004-12-07 Silicon Light Machines, Inc. Blazed grating light valve
US6930364B2 (en) 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
US6956995B1 (en) 2001-11-09 2005-10-18 Silicon Light Machines Corporation Optical communication arrangement
US6800238B1 (en) 2002-01-15 2004-10-05 Silicon Light Machines, Inc. Method for domain patterning in low coercive field ferroelectrics
US6908791B2 (en) * 2002-04-29 2005-06-21 Texas Instruments Incorporated MEMS device wafer-level package
AU2003223079A1 (en) * 2002-05-24 2003-12-12 Koninklijke Philips Electronics N.V. Method suitable for transferring a component supported by a carrier to a desired position on a substrate, and a device designed for this
US6767751B2 (en) 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US6728023B1 (en) 2002-05-28 2004-04-27 Silicon Light Machines Optical device arrays with optimized image resolution
US7054515B1 (en) 2002-05-30 2006-05-30 Silicon Light Machines Corporation Diffractive light modulator-based dynamic equalizer with integrated spectral monitor
US6822797B1 (en) 2002-05-31 2004-11-23 Silicon Light Machines, Inc. Light modulator structure for producing high-contrast operation using zero-order light
US6829258B1 (en) 2002-06-26 2004-12-07 Silicon Light Machines, Inc. Rapidly tunable external cavity laser
US6813059B2 (en) 2002-06-28 2004-11-02 Silicon Light Machines, Inc. Reduced formation of asperities in contact micro-structures
US6908201B2 (en) 2002-06-28 2005-06-21 Silicon Light Machines Corporation Micro-support structures
US6700173B1 (en) 2002-08-20 2004-03-02 Memx, Inc. Electrically isolated support for overlying MEM structure
US6875257B2 (en) * 2002-08-20 2005-04-05 Memx, Inc. Particle filter for microelectromechanical systems
US20040036378A1 (en) * 2002-08-20 2004-02-26 Rodgers Murray Steven Dust cover for MEM components
US6703675B1 (en) 2002-08-20 2004-03-09 Memx, Inc. Particle filter for partially enclosed microelectromechanical systems
US7057795B2 (en) 2002-08-20 2006-06-06 Silicon Light Machines Corporation Micro-structures with individually addressable ribbon pairs
US6801354B1 (en) 2002-08-20 2004-10-05 Silicon Light Machines, Inc. 2-D diffraction grating for substantially eliminating polarization dependent losses
US6712480B1 (en) 2002-09-27 2004-03-30 Silicon Light Machines Controlled curvature of stressed micro-structures
US6928207B1 (en) 2002-12-12 2005-08-09 Silicon Light Machines Corporation Apparatus for selectively blocking WDM channels
US7057819B1 (en) 2002-12-17 2006-06-06 Silicon Light Machines Corporation High contrast tilting ribbon blazed grating
US6987600B1 (en) 2002-12-17 2006-01-17 Silicon Light Machines Corporation Arbitrary phase profile for better equalization in dynamic gain equalizer
US6934070B1 (en) 2002-12-18 2005-08-23 Silicon Light Machines Corporation Chirped optical MEM device
US6927891B1 (en) 2002-12-23 2005-08-09 Silicon Light Machines Corporation Tilt-able grating plane for improved crosstalk in 1×N blaze switches
US20040147169A1 (en) * 2003-01-28 2004-07-29 Allison Jeffrey W. Power connector with safety feature
US7068372B1 (en) 2003-01-28 2006-06-27 Silicon Light Machines Corporation MEMS interferometer-based reconfigurable optical add-and-drop multiplexor
US7286764B1 (en) 2003-02-03 2007-10-23 Silicon Light Machines Corporation Reconfigurable modulator-based optical add-and-drop multiplexer
US6947613B1 (en) 2003-02-11 2005-09-20 Silicon Light Machines Corporation Wavelength selective switch and equalizer
US6922272B1 (en) 2003-02-14 2005-07-26 Silicon Light Machines Corporation Method and apparatus for leveling thermal stress variations in multi-layer MEMS devices
US6806997B1 (en) 2003-02-28 2004-10-19 Silicon Light Machines, Inc. Patterned diffractive light modulator ribbon for PDL reduction
US6829077B1 (en) 2003-02-28 2004-12-07 Silicon Light Machines, Inc. Diffractive light modulator with dynamically rotatable diffraction plane
US7391973B1 (en) 2003-02-28 2008-06-24 Silicon Light Machines Corporation Two-stage gain equalizer
US6922273B1 (en) 2003-02-28 2005-07-26 Silicon Light Machines Corporation PDL mitigation structure for diffractive MEMS and gratings
US7027202B1 (en) 2003-02-28 2006-04-11 Silicon Light Machines Corp Silicon substrate as a light modulator sacrificial layer
US7042611B1 (en) 2003-03-03 2006-05-09 Silicon Light Machines Corporation Pre-deflected bias ribbons
JP4488686B2 (ja) * 2003-03-12 2010-06-23 日東電工株式会社 紫外線照射方法およびそれを用いた装置
US7376215B2 (en) * 2005-12-27 2008-05-20 Honeywell International Inc. Measurement of ash composition using scanning high voltage X-ray sensor
US7297567B2 (en) * 2006-01-10 2007-11-20 Knowles Electronics, Llc. Method for singulating a released microelectromechanical system wafer
CN100530593C (zh) * 2007-06-01 2009-08-19 日月光半导体制造股份有限公司 切割晶圆的方法
US8323049B2 (en) 2009-01-30 2012-12-04 Fci Americas Technology Llc Electrical connector having power contacts
USD619099S1 (en) 2009-01-30 2010-07-06 Fci Americas Technology, Inc. Electrical connector
US8987632B2 (en) * 2009-10-09 2015-03-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Modification of surface energy via direct laser ablative surface patterning
US9278374B2 (en) 2012-06-08 2016-03-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Modified surface having low adhesion properties to mitigate insect residue adhesion
CN105633281B (zh) * 2016-01-06 2018-07-17 京东方科技集团股份有限公司 一种柔性显示面板及其封装方法、显示装置
JP6765949B2 (ja) * 2016-12-12 2020-10-07 株式会社ディスコ ウェーハの加工方法
TWI722172B (zh) * 2017-04-20 2021-03-21 矽品精密工業股份有限公司 切割方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1481711A (fr) * 1965-06-02 1967-05-19 Nippon Electric Co Dispositif pour briser une masse semi-conductrice en morceaux élémentaires
DE2946726C2 (de) * 1979-11-20 1982-05-19 Ruwel-Werke Spezialfabrik für Leiterplatten GmbH, 4170 Geldern Leiterplatte mit starren und flexiblen Bereichen und Verfahren zu deren Herstellung
US4961804A (en) * 1983-08-03 1990-10-09 Investment Holding Corporation Carrier film with conductive adhesive for dicing of semiconductor wafers and dicing method employing same
US4897141A (en) * 1984-12-06 1990-01-30 Valtech Corporation Method for preparing semiconductor wafers
JPS61180442A (ja) * 1985-02-05 1986-08-13 Toshiba Corp 半導体装置の製造方法
DE3665191D1 (en) * 1985-02-14 1989-09-28 Bando Chemical Ind A pressure sensitive adhesive and a pressure sensitive adhesive film having thereon a layer of the same
US5187007A (en) * 1985-12-27 1993-02-16 Lintec Corporation Adhesive sheets
US4793883A (en) * 1986-07-14 1988-12-27 National Starch And Chemical Corporation Method of bonding a semiconductor chip to a substrate
JPH01143211A (ja) * 1987-11-27 1989-06-05 Takatori Haitetsuku:Kk ウエハーに対する保護テープの貼付け切り抜き方法および装置
JPH0715087B2 (ja) * 1988-07-21 1995-02-22 リンテック株式会社 粘接着テープおよびその使用方法
JPH03135048A (ja) * 1989-10-20 1991-06-10 Fujitsu Ltd 半導体装置の製造方法
EP0431637B1 (en) * 1989-12-08 1993-06-02 Sumitomo Electric Industries, Ltd. Pickup method and the pickup apparatus for a chip-type part
US5006202A (en) * 1990-06-04 1991-04-09 Xerox Corporation Fabricating method for silicon devices using a two step silicon etching process

Also Published As

Publication number Publication date
EP0661737A1 (en) 1995-07-05
US5435876A (en) 1995-07-25
CA2119505A1 (en) 1994-09-30
EP0661737B1 (en) 1999-07-14
DE69419489T2 (de) 2000-01-13
CN1043594C (zh) 1999-06-09
KR940022721A (ko) 1994-10-21
TW249298B (enExample) 1995-06-11
DE69419489D1 (de) 1999-08-19
CN1100563A (zh) 1995-03-22
JPH0799172A (ja) 1995-04-11

Similar Documents

Publication Publication Date Title
KR100284019B1 (ko) 그리드어레이마스킹테이프공정
US5605489A (en) Method of protecting micromechanical devices during wafer separation
EP0614102B1 (en) Improvements in or relating to integrated circuit fabrication
US5527744A (en) Wafer method for breaking a semiconductor
US5389182A (en) Use of a saw frame with tape as a substrate carrier for wafer level backend processing
US6582983B1 (en) Method and wafer for maintaining ultra clean bonding pads on a wafer
US6465329B1 (en) Microcircuit die-sawing protector and method
US5923995A (en) Methods and apparatuses for singulation of microelectromechanical systems
DE10013067B4 (de) Verfahren zum Herstellen von einer Halbleitervorrichtung durch Chipvereinzelung und Wafer-Lösevorrichtung
US6175162B1 (en) Semiconductor wafer having a bottom surface protective coating
US7211370B2 (en) Method for dicing wafer
US6352935B1 (en) Method of forming a cover cap for semiconductor wafer devices
US20050139962A1 (en) Silicon wafer with soluable protective coating
US5832585A (en) Method of separating micro-devices formed on a substrate
KR20070089122A (ko) 반도체 칩의 제조 방법
US20200339416A1 (en) Encapsulant barrier
US6572944B1 (en) Structure for fabricating a special-purpose die using a polymerizable tape
US11235971B2 (en) Singulation of wafer level packaging
US20020072236A1 (en) Wafer surface protection method
US6580153B1 (en) Structure for protecting a micromachine with a cavity in a UV tape
EP1238423A2 (en) Methods for separating microcircuit dies from wafers
KR100284018B1 (ko) 반도체웨이퍼공정
JP7107436B2 (ja) ダイシングテープの貼付方法
JPH05267452A (ja) 半導体装置の製造方法
KR20000008966A (ko) 보호 테이프를 이용한 웨이퍼 절단 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

G170 Re-publication after modification of scope of protection [patent]
PG1701 Publication of correction

St.27 status event code: A-5-5-P10-P19-oth-PG1701

Patent document republication publication date: 20020225

Republication note text: Request for Correction Notice

Gazette number: 1002840190000

Gazette reference publication date: 20011130

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20081014

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20091215

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20091215

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000